IXXH30N65C4D1

Advance Technical Information IXXH30N65C4D1 XPTTM 650V IGBT GenX4TM w/ Diode VCES = IC110 = VCE(sat)  tfi(typ) = Extreme Light Punch Through IGBT for 20-60 kHz Switching 650V 30A 2.50V 28ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M 650 650 V V VGES VGEM Continuous Transient ±20 ±30 V V IC25 IC110 IF110 ICM TC TC TC TC 62 30 40 136 A A A A SSOA (RBSOA) VGE = 15V, TVJ = 150°C, RG = 15 Clamped Inductive Load ICM = 60 @VCE  VCES A tsc (SCSOA) VGE = 15V, VCE = 360V, TJ = 150°C RG = 82, Non Repetitive 10 μs PC TC = 25°C 230 W -55 ... +175 175 -55 ... +175 °C °C °C 300 260 °C °C 1.13/10 Nm/lb.in. 6 g = 25°C (Chip Capability) = 110°C = 110°C = 25°C, 1ms Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Md Mounting Torque Weight C Tab E G = Gate E = Emitter C = Collector Tab = Collector Features  TJ TJM Tstg TL TSOLD G     Optimized for 20-60kHz Switching Square RBSOA Anti-Parallel Diode Short Circuit Capability International Standard Package Advantages    High Power Density Extremely Rugged Low Gate Drive Requirement Applications   Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVCES IC = 250A, VGE = 0V 650 VGE(th) IC = 250A, VCE = VGE 4.0 ICES VCE = VCES, VGE = 0V VCE = 0V, VGE = 20V VCE(sat) IC = 30A, VGE = 15V, Note 1 TJ = 150C © 2016 IXYS CORPORATION, All Rights Reserved  V 6.5 TJ = 150C IGES   V  10 A 1 mA  100 2.15 2.50  2.50 Power Inverters UPS Motor Drives SMPS PFC Circuits Battery Chargers Welding Machines Lamp Ballasts nA V V DS100767(12/16) IXXH30N65C4D1 Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 10 IC = 30A, VCE = 10V, Note 1 Cies Coes Cres VCE = 25V, VGE = 0V, f = 1MHz Qg(on) Qge Qgc IC = 30A, VGE = 15V, VCE = 0.5 • VCES td(on) tri Eon td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff Inductive load, TJ = 25°C IC = 30A, VGE = 15V VCE = 400V, RG = 15 Note 2 Inductive load, TJ = 150°C IC = 30A, VGE = 15V VCE = 400V, RG = 15 Note 2 RthJC RthCS TO-247 (IXXH) Outline 16 S 1460 170 21 pF pF pF 47 10 20 nC nC nC 20 72 1.10 140 28 0.40 ns ns mJ ns ns mJ 19 46 1.95 127 34 0.44 ns ns mJ ns ns mJ 0.21 0.65 °C/W °C/W 1 - Gate 2,4 - Collector 3 - Emitter Reverse Diode (FRED) Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. VF IF = 30A, VGE = 0V, Note 1 IRM trr IF = 30A, VGE = 0V, -diF/dt = 500A/μs, VR = 400V, TJ = 150°C 1.2 2.5 V V 13 180 A ns TJ = 150°C RthJC Notes: 0.75 °C/W 1. Pulse test, t  300μs, duty cycle, d  2%. 2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG. ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXXH30N65C4D1 Fig. 2. Extended Output Characteristics @ TJ = 25ºC Fig. 1. Output Characteristics @ TJ = 25ºC 60 11V VGE = 15V 13V 12V 50 140 14V 40 100 I C - Amperes I C - Amperes VGE = 15V 120 10V 9V 30 13V 80 12V 11V 60 10V 20 40 8V 10 9V 20 7V 0 0 0.5 1 1.5 2 2.5 3 8V 7V 0 3.5 4 0 5 10 15 60 2.0 VGE = 15V 13V 12V V CE(sat) - Normalized I C - Amperes 11V 10V 30 9V 20 8V 10 0 1.5 2 2.5 3 3.5 4 1.4 1.2 I C = 30A 1.0 I C = 15A 0.6 6V 1 I C = 60A 1.6 0.8 7V 0.5 -50 4.5 -25 0 25 VCE - Volts 100 125 150 175 11 12 Fig. 6. Input Admittance TJ = 25ºC 60 6 50 I C - Amperes VCE - Volts 75 70 7 5 4 50 TJ - Degrees Centigrade Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage 8 30 VGE = 15V 1.8 40 0 25 Fig. 4. Dependence of VCE(sat) on Junction Temperature Fig. 3. Output Characteristics @ TJ = 150ºC 50 20 VCE - Volts VCE - Volts I C = 60A TJ = - 40ºC 25ºC 150ºC 40 30 20 3 30A 10 2 15A 0 1 7 8 9 10 11 12 VGE - Volts © 2016 IXYS CORPORATION, All Rights Reserved 13 14 15 4 5 6 7 8 VGE - Volts 9 10 IXXH30N65C4D1 Fig. 7. Transconductance Fig. 8. Gate Charge 22 16 20 TJ = - 40ºC VCE = 325V 14 I C = 30A 18 25ºC 14 12 V GE - Volts g f s - Siemens I G = 10mA 12 16 150ºC 10 8 6 10 8 6 4 4 2 2 0 0 0 10 20 30 40 50 60 70 0 80 5 10 I C - Amperes 20 25 30 35 40 45 50 QG - NanoCoulombs Fig. 9. Capacitance Fig. 10. Reverse-Bias Safe Operating Area 10,000 70 f = 1 MHz 60 Cies 50 1,000 I C - Amperes Capacitance - PicoFarads 15 Coes 40 30 100 20 TJ = 150ºC Cres RG = 15Ω dv / dt < 10V / ns 10 0 10 0 5 10 15 20 25 30 35 40 100 200 300 400 500 600 700 VCE - Volts VCE - Volts Fig. 11. Maximum Transient Thermal Impedance (IGBT) Z(th)JC - K / W 1 0.1 0.01 0.00001 0.0001 0.001 0.01 Pulse Width - Second IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 0.1 1 IXXH30N65C4D1 Fig. 12. Inductive Switching Energy Loss vs. Gate Resistance 2.0 Eoff 1.8 1.4 10 Eon 9 1.0 5 0.8 4 I C = 30A 0.6 Eoff - MilliJoules Eoff - MilliJoules 6 2 0.2 30 35 TJ = 25ºC 0.6 3 0.4 2 0.2 1 40 45 50 0 30 55 35 40 Fig. 14. Inductive Switching Energy Loss vs. Junction Temperature 1.6 RG = 15ΩVGE = 15V 8 60 7 55 3 I C = 30A 0.6 tfi 0.2 td(off) 270 75 100 125 VCE = 400V 240 45 210 40 180 I C = 60A I C = 30A 35 120 1 25 90 0 150 20 60 15 20 25 30 tfi td(off) 130 TJ = 25ºC t f i - Nanoseconds t f i - Nanoseconds 40 110 25 100 20 35 40 45 55 50 I C - Amperes © 2016 IXYS CORPORATION, All Rights Reserved 55 60 170 160 VCE = 400V I C = 60A 150 140 I C = 30A 35 20 10 td(off) 40 120 30 50 RG = 15Ω, VGE = 15V 45 30 25 45 30 130 120 I C = 60A 25 50 75 100 TJ - Degrees Centigrade 125 110 100 150 t d(off) - Nanoseconds 140 t d(off) - Nanoseconds 50 tfi 50 150 VCE = 400V 20 40 Fig. 17. Inductive Turn-off Switching Times vs. Junction Temperature 55 160 RG = 15Ω, VGE = 15V TJ = 150ºC 35 RG - Ohms Fig. 16. Inductive Turn-off Switching Times vs. Collector Current 60 150 30 TJ - Degrees Centigrade 15 300 2 0.4 70 60 t d(off) - Nanoseconds 0.8 - MilliJoules 4 on 1.0 E 5 50 55 Fig. 15. Inductive Turn-off Switching Times vs. Gate Resistance 50 6 I C = 60A 1.2 25 50 TJ = 150ºC, VGE = 15V VCE = 400V 1.4 Eoff - MilliJoules Eon t f i - Nanoseconds Eoff 45 I C - Amperes RG - Ohms 1.8 4 0.0 1 25 TJ = 150ºC 0.8 3 0.4 20 5 E on - MilliJoules I C = 60A 1.2 E on - MilliJoules 7 6 VCE = 400V 1.0 1.4 7 Eon RG = 15ΩVGE = 15V 8 VCE = 400V 15 Eoff 1.2 TJ = 150ºC , VGE = 15V 1.6 Fig. 13. Inductive Switching Energy Loss vs. Collector Current IXXH30N65C4D1 Fig. 18. Inductive Turn-on Switching Times vs. Gate Resistance tri 200 120 140 100 120 td(on) TJ = 150ºC, VGE = 15V t r i - Nanoseconds 120 60 I C = 60A 80 40 I C =30A 40 20 0 20 25 30 35 40 45 50 tri td(on) 44 40 RG = 15Ω, VGE = 15V 36 VCE = 400V 120 32 I C = 60A 100 28 80 24 60 20 40 16 I C = 30A 20 25 50 t d(on) - Nanoseconds t r i - Nanoseconds 140 75 100 30 TJ = 25ºC 80 26 TJ = 150ºC 60 22 40 18 20 14 10 20 25 30 35 40 I C - Amperes Fig. 20. Inductive Turn-on Switching Times vs. Junction Temperature 160 34 VCE = 400V 15 55 RG - Ohms 180 td(on) RG = 15Ω, VGE = 15V 0 0 15 tri 100 125 38 12 150 TJ - Degrees Centigrade IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 45 50 55 60 t d(on) - Nanoseconds 80 t d(on) - Nanoseconds VCE = 400V 160 t r i - Nanoseconds 240 Fig. 19. Inductive Turn-on Switching Times vs. Collector Current IXXH30N65C4D1 Fig. 21. Diode Forward Characteristics Fig. 22. Reverse Recovery Charge vs. -diF/dt 200 2.0 TJ = 150ºC 1.8 VR = 400V 150 100 Q RR (µC) I F (A) 1.6 TJ = 150ºC TJ = 25ºC 1.4 IF = 60A 30A 1.2 50 15A 1.0 0 0 0.5 1 1.5 2 2.5 0.8 3 0 500 1000 VF (V) Fig. 23 Reverse Recovery Current vs. -diF/dt 2000 2500 3000 Fig. 24. Reverse Recovery Time vs. -diF/dt 300 45 TJ = 150ºC 40 VR = 400V TJ = 150ºC IF = 60A 250 IF = 15A 35 VR = 400V 200 30 30A 30A tRR (ns) I RR (A) 1500 -diF/ dt (A/µs) 25 60A 150 15A 20 100 15 50 10 5 0 0 500 1000 1500 2000 2500 3000 0 500 1000 diF/dt (A/µs) Fig. 25. Dynamic Parameters QRR, IRR vs. Junction Temperature 1.2 2000 2500 3000 1 Fig. 26. Maximum Transient Thermal Impedance (Diode) VR = 400V 1.0 IF = 30A -diF /dt = 600A/µs Z(th)JC - K / W 0.8 KF 1500 -diF/dt (A/µs) 0.6 0.4 0.1 KF IRR 0.2 KF QRR 0.0 0 20 40 60 80 100 TJ (ºC) © 2016 IXYS CORPORATION, All Rights Reserved 120 140 160 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS REF: IXX_30N65C4D1(E4-RZ43) 12-01-16 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. 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