IXXN200N65A4

Preliminary Technical Information XPTTM 650V IGBT GenX4TM IXXN200N65A4 VCES = IC110 = VCE(sat)  tfi(typ) = Extreme Light Punch Through IGBT for 5-20kHz Switching 650V 200A 1.80V 123ns SOT-227B, miniBLOC E153432 E G Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M 650 650 V V VGES VGEM Continuous Transient ±20 ±30 V V IC25 ILRMS IC110 ICM TC = 25°C (Chip Capability) Leads Current Limit TC = 110°C TC = 25°C, 1ms 410 200 200 1200 A A A A SSOA (RBSOA) VGE = 15V, TVJ = 150°C, RG = 2 Clamped Inductive Load ICM = 400 @VCE  VCES A tsc (SCSOA) VGE = 15V, VCE = 360V, TJ = 150°C RG = 2, Non Repetitive 10 μs PC TC = 25°C 1250 W -55 ... +175 175 -55 ... +175 °C °C °C 2500 3000 V~ V~ 1.5/13 1.3/11.5 Nm/lb.in. Nm/lb.in. 30 g TJ TJM Tstg VISOL Md 50/60Hz IISOL 1mA t = 1min t = 1s Mounting Torque Terminal Connection Torque Weight E C G = Gate, C = Collector, E = Emitter  either emitter terminal can be used as Main or Kelvin Emitter Features          Advantages   Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVCES IC = 4mA, VGE = 0V 650 VGE(th) IC = 3mA, VCE = VGE 5.0 ICES VCE = VCES, VGE = 0V V 6.5 10 A 500 A TJ = 150C IGES VCE = 0V, VGE = 20V VCE(sat) IC = 150A, VGE = 15V, Note 1 TJ = 150C ©2019 IXYS CORPORATION, All Rights Reserved V 200 1.44 1.15 1.80 V V High Power Density Low Gate Drive Requirement Applications      nA Optimized for Low Conduction and Switching Losses miniBLOC, with Aluminium Nitride Isolation International Standard Package Isolation Voltage 2500V~ Optimized for 5-20kHz Switching Square RBSOA Short Circuit Capability High Current Handling Capability Easy to Parallel   Power Inverters UPS Motor Drives SMPS PFC Circuits Battery Chargers Welding Machines DS100742B(4/19) IXXN200N65A4 Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 48 IC = 60A, VCE = 10V, Note 1 Cies Coes Cres VCE = 25V, VGE = 0V, f = 1MHz RGi Integrated Gate Resistor Qg IC = 200A, VGE = +15V, VCE = 0.5 • VCES td(on) tri Eon td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff Inductive load, TJ = 25°C IC = 100A, VGE = +15V VCE = 300V, RG = 2 Note 2 Inductive load, TJ = 150°C IC = 100A, VGE = +15V VCE = 300V, RG = 2 Note 2 RthJC RthCS Notes: SOT-227B miniBLOC (IXXN) 80 S 7400 526 370 pF pF pF 4  930 nC 260 120 4.4 540 123 4.6 ns ns mJ ns ns mJ 170 144 6.1 420 290 6.7 ns ns mJ ns ns mJ 0.05 0.12 °C/W °C/W 1. Pulse test, t  300μs, duty cycle, d  2%. 2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG. PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXXN200N65A4 o Fig. 2. Extended Output Characteristics @ TJ = 25 C o Fig. 1. Output Characteristics @ TJ = 25 C 900 400 VGE = 15V VGE = 15V 13V 12V 350 800 14V 11V 13V 600 250 I C - Amperes I C - Amperes 300 700 10V 200 9V 150 100 500 12V 400 11V 300 10V 200 9V 8V 50 100 8V 7V 7V 0 0 0 0.5 1 1.5 2 2.5 3 0 2 4 6 8 2.0 400 VGE = 15V 13V 12V 14 16 18 20 11V 250 10V 200 9V 150 100 150 175 VGE = 15V 1.8 VCE(sat) - Normalized 300 I C - Amperes 12 Fig. 4. Dependence of VCE(sat) on Junction Temperature o Fig. 3. Output Characteristics @ TJ = 150 C 350 10 VCE - Volts VCE - Volts 8V I C = 400A 1.6 1.4 1.2 I C = 200A 1.0 I C = 100A 0.8 50 7V 6V 0 0 0.5 1 1.5 2 2.5 3 3.5 0.6 4 -50 -25 0 25 VCE - Volts 50 75 100 125 TJ - Degrees Centigrade Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage Fig. 6. Input Admittance 350 4.0 o TJ = 25 C o TJ = - 40 C 300 3.5 o 25 C 250 o I C = 400A I C - Amperes VCE - Volts 3.0 2.5 2.0 200A 1.5 150 C 200 150 100 100A 50 1.0 0 8 9 10 11 12 VGE - Volts ©2019 IXYS CORPORATION, All Rights Reserved 13 14 15 4 5 6 7 8 VGE - Volts 9 10 11 IXXN200N65A4 Fig. 8. Gate Charge Fig. 7. Transconductance 15 140 o TJ = - 40 C VCE = 325V 120 I C = 200A 10 I G = 10mA o 25 C 5 V GE - Volts g f s - Siemens 100 80 o 150 C 60 0 -5 40 -10 20 0 0 50 100 150 200 250 -15 -200 300 -100 0 100 200 300 400 500 600 I C - Amperes QG - NanoCoulombs Fig. 9. Capacitance Fig. 10. Reverse-Bias Safe Operating Area 700 800 10,000 400 Capacitance - PicoFarads C ies I C - Amperes 300 1,000 Coes 200 o TJ = 150 C 100 C res RG = 2Ω dv / dt < 10V / ns f = 1 MHz 0 100 0 5 10 15 20 25 30 35 100 40 200 300 400 500 600 700 VCE - Volts VCE - Volts Fig. 11. Maximum Transient Thermal Impedance 1 Z (th)JC - K / W 0.1 0.01 0.001 0.0001 0.00001 0.0001 0.001 0.01 Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 0.1 1 10 IXXN200N65A4 Fig. 12. Inductive Switching Energy Loss vs. Gate Resistance 10 Eoff 9 14 10 Eon 9 VCE = 300V 6 5 5 4 4 I C = 50A 3 E off - MilliJoules I C = 100A 6 1 3 4 5 6 6 o TJ = 25 C 6 7 8 9 0 40 10 60 80 100 Eoff tfi 7 4 4 3 3 I C = 50A 2 td(off) 800 340 700 I C = 50A 320 500 I C = 100A 280 1 0 100 400 260 0 150 125 300 0 1 2 3 tfi td(off) RG = 2Ω, VGE = +15V VCE = 300V 650 360 600 320 550 200 500 o o TJ = 150 C, 25 C 100 400 50 350 120 300 200 80 0 80 100 120 140 7 8 9 160 I C - Amperes ©2019 IXYS CORPORATION, All Rights Reserved 180 Fig. 17. Inductive Turn-off Switching Times vs. Junction Temperature tfi td(off) 10 640 600 RG = 2Ω, VGE = +15V VCE = 300V 560 520 I C = 50A 240 450 60 6 280 150 40 5 480 200 440 160 400 I C = 100A 360 25 50 75 100 TJ - Degrees Centigrade 125 320 150 t d(off) - Nanoseconds t f i - Nanoseconds 400 t d(off) - Nanoseconds 250 700 t f i - Nanoseconds Fig. 16. Inductive Turn-off Switching Times vs. Collector Current 300 4 RG - Ohms TJ - Degrees Centigrade 350 600 300 2 1 900 VCE = 300V t f i - Nanoseconds 5 400 0 200 t d(off) - Nanoseconds 5 75 180 TJ = 150 C, VGE = +15V 6 50 160 o 360 I C = 100A VCE = 300V 25 140 Fig. 15. Inductive Turn-off Switching Times vs. Gate Resistance 380 8 E on - MilliJoules E off - MilliJoules Eon RG = 2ΩVGE = +15V 6 120 I C - Amperes Fig. 14. Inductive Switching Energy Loss vs. Junction Temperature 7 4 2 RG - Ohms 8 8 2 1 2 o TJ = 150 C 8 4 2 1 10 3 2 0 12 E on - MilliJoules 7 Eon VCE = 300V 10 7 14 RG = 2ΩVGE = +15V 8 E on - MilliJoules E off - MilliJoules 8 Eoff 12 o TJ = 150 C , VGE = +15V Fig. 13. Inductive Switching Energy Loss vs. Collector Current IXXN200N65A4 280 tri td(on) o TJ = 150 C, VGE = +15V VCE = 300V 200 220 280 200 240 160 180 120 160 I C = 50A Fig. 19. Inductive Turn-on Switching Times vs. Collector Current tri td(on) 400 350 RG = 2Ω, VGE = +15V VCE = 300V 300 200 250 o TJ = 25 C o TJ = 150 C 160 200 80 140 120 150 40 120 80 100 100 40 0 0 1 2 3 4 5 6 7 8 9 40 10 RG - Ohms tri 160 80 100 120 140 160 180 50 200 I C - Amperes Fig. 20. Inductive Turn-on Switching Times vs. Junction Temperature 180 60 t d(on) - Nanoseconds I C = 100A 320 t d(on) - Nanoseconds t r i - Nanoseconds 240 240 t r i - Nanoseconds Fig. 18. Inductive Turn-on Switching Times vs. Gate Resistance td(on) 280 260 RG = 2Ω, VGE = +15V 140 240 120 220 t d(on) - Nanoseconds t r i - Nanoseconds VCE = 300V I C = 100A 100 200 80 180 I C = 50A 60 160 40 25 50 75 100 125 140 150 TJ - Degrees Centigrade IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: IXX_200N65A4(D9-RY46) 12-20-18 IXXN200N65A4 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. ©2019 IXYS CORPORATION, All Rights Reserved