IXXX140N65B4H1

XPTTM 650V IGBT GenX4TM w/Sonic Diode IXXX140N65B4H1 VCES = IC110 = VCE(sat)  tfi(typ) = Extreme Light Punch Through IGBT for 10-30kHz Switching 650V 140A 1.90V 44ns PLUS247 Symbol Test Conditions VCES VCGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M 650 650 V V VGES VGEM Continuous Transient ±20 ±30 V V IC25 ILRMS IC110 IF110 ICM TC = 25°C (Chip Capability) Terminal Current Limit TC = 110°C TC = 110°C TC = 25°C, 1ms 340 160 140 72 840 A A A A A SSOA (RBSOA) VGE = 15V, TVJ = 150°C, RG = 4.7 Clamped Inductive Load ICM = 240 V CE  VCES A tsc (SCSOA) VGE = 15V, VCE = 400V, TJ = 150°C RG = 10, Non Repetitive 10 µs PC Maximum Ratings 1200 W -55 ... +175 175 -55 ... +175 °C °C °C 300 °C 20..120 /4.5..27 N/lb 6 g TJ TJM Tstg Maximum Lead Temperature for Soldering 1.6 mm (0.062 in.) from Case for 10s FC Mounting Force G C G = Gate C = Collector E Tab E = Emitter Tab = Collector Features  TC = 25°C TL G      Optimized for 10-30kHz Switching Square RBSOA Short Circuit Capability Anti-Parallel Sonic Diode High Current Handling Capability International Standard Package Advantages Weight   High Power Density Low Gate Drive Requirement Applications Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVCES IC = 250µA, VGE = 0V 650 VGE(th) IC = 250µA, VCE = VGE 4.0 ICES VCE = VCES, VGE = 0V VCE = 0V, VGE = ±20V VCE(sat) IC 6.5 V     = 120A, VGE = 15V, Note 1 TJ = 150°C © 2021 Littelfuse, Inc.  V 25 µA 5 mA TJ = 150°C IGES  1.55 1.76 ±100 nA 1.90 V V    Power Inverters UPS Motor Drives SMPS PFC Circuits Battery Chargers Welding Machines Lamp Ballasts High Frequency Power Inverters DS100651C(01/21) IXXX140N65B4H1 Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs IC = 60A, VCE = 10V, Note 1 40 Cies Coes Cres VCE = 25V, VGE = 0V, f = 1MHz Qg(on) Qge Qgc td(on) tri Eon td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff IC = 140A, VGE = 15V, VCE = 0.5 • VCES Inductive load, TJ = 25°C IC = 100A, VGE = 15V VCE = 400V, RG = 4.7 Note 2 Inductive load, TJ = 150°C IC = 100A, VGE = 15V VCE = 400V, RG = 4.7 Note 2 RthJC RthCS 70 S 8000 560 107 pF pF pF 250 70 90 nC nC nC 54 105 5.75 270 44 2.67 ns ns mJ ns ns mJ 43 85 6.80 240 100 3.90 ns ns mJ ns ns mJ 0.15 0.125 °C/W °C/W Reverse Sonic Diode (FRD) Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) VF IF = 100A, VGE = 0V, Note 1 IRM IF = 100A, VGE = 0V, TJ = 150°C -diF/dt = 600A/sVR = 400V trr Characteristic Values Min. Typ. Max. 2.1 2.2 TJ = 150°C V V 43 A 210 ns RthJC Notes: 2.5 0.24 °C/W 1. Pulse test, t  300µs, duty cycle, d  2%. 2. Switching times & energy losses may increase for higher VCE(Clamp), TJ or RG. Littelfuse reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXXX140N65B4H1 Fig. 1. Output Characteristics @ TJ = 25ºC Fig. 2. Extended Output Characteristics @ TJ = 25ºC 240 800 V GE = 15V 13V 12V 11V 200 700 10V IC - Amperes I C - Amperes 160 9V 120 80 8V VGE = 15V 600 14V 500 13V 400 12V 11V 300 10V 200 9V 40 100 7V 0 8V 7V 0 0 0.5 1 1.5 2 2.5 3 0 2 4 6 8 10 16 18 20 22 24 Fig. 4. Dependence of VCE(sat) on Junction Temperature Fig. 3. Output Characteristics @ TJ = 150ºC 240 1.8 V GE = 15V 13V 12V 200 V GE = 15V 11V 1.6 I C = 240A VCE(sat) - Normalized 10V 160 9V 120 80 8V 1.4 1.2 I C = 120A 1.0 0.8 40 I C = 60A 7V 0 0 0.5 1 1.5 2 2.5 3 6V 0.6 -50 3.5 -25 0 25 VCE - Volts 50 75 100 125 150 175 TJ - Degrees Centigrade Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage Fig. 6. Input Admittance 4.0 400 TJ = 25ºC 350 3.5 TJ = - 40ºC 25ºC 300 I C - Amperes 3.0 VCE - Volts 14 VCE - Volts VCE - Volts I C - Amperes 12 I C = 240A 2.5 120A 2.0 150ºC 250 200 150 100 1.5 50 60A 1.0 0 7 8 9 10 11 VGE - Volts © 2021 Littelfuse, Inc. 12 13 14 15 4 5 6 7 8 VGE - Volts 9 10 11 12 IXXX140N65B4H1 Fig. 7. Transconductance Fig. 8. Gate Charge 16 140 12 g f s - Siemens 100 VGE - Volts 25ºC 80 150ºC 60 10 8 6 40 4 20 2 0 0 0 40 80 120 160 200 240 280 320 360 400 0 100 150 200 QG - NanoCoulombs Fig. 9. Capacitance Fig. 10. Reverse-Bias Safe Operating Area 250 280 C ies 240 200 1,000 C oes IC - Amperes Capacitance - PicoFarads 50 I C - Amperes 10,000 100 160 120 80 Cres f = 1 MHz 0 5 TJ = 150ºC RG = 4.7Ω dv / dt < 10V / ns 40 10 10 15 20 25 30 35 0 40 100 VCE - Volts 200 300 Fig. 11. Forward-Bias Safe Operating Area 600 Fig. 12. Maximum Transient Thermal Impedance (IGBT) aa a Z (th)JC - K / W 100µs 10 700 0.1 25µs V CE(sat) Limit 500 VCE - Volts 0.3 100 400 Fig. 11. Maximum Transient Thermal Impedance 1 1000 ID - Amperes VCE = 325V I C = 140A I G = 10mA 14 TJ = - 40ºC 120 0.01 1 1ms TJ = 175ºC TC = 25ºC Single Pulse 0.1 10ms 0.01 1 10 100 1000 0.001 0.00001 VDS - Volts Littelfuse reserves the right to change limits, test conditions, and dimensions. 0.0001 0.001 0.01 0.1 Pulse Width - Seconds 1 10 IXXX140N65B4H1 Fig. 14. Inductive Switching Energy Loss vs. Collector Current Fig. 13. Inductive Switching Energy Loss vs. Gate Resistance 7 Eoff Eon TJ = 150ºC , VGE = 15V VCE = 400V 6 10 Eoff Eon RG = 4.7Ω VGE = 15V VCE = 400V 12 4 8 TJ = 150ºC 10 8 3 6 I C = 50A 2 Eon - MilliJoules 4 Eon - MilliJoules I C = 100A Eoff - MilliJoules 5 Eoff - MilliJoules 5 14 3 6 2 4 TJ = 25ºC 4 1 1 2 2 0 0 0 4 6 8 10 12 14 16 18 0 50 20 55 60 65 70 RG - Ohms Eoff Eon RG = 4.7Ω  VGE = 15V VCE = 400V t f i - Nanoseconds Eoff - MilliJoules 700 120 600 100 500 I C = 100A 80 400 I C = 50A 60 300 40 200 20 0 100 td(off) 2 0 125 100 4 150 6 8 10 12 14 16 18 TJ - Degrees Centigrade RG - Ohms Fig. 17. Inductive Turn-off Switching Times vs. Collector Current Fig. 18. Inductive Turn-off Switching Times vs. Junction Temperature 20 140 320 120 100 300 100 300 80 280 80 280 tfi 120 260 TJ = 25ºC TJ = 150ºC 60 65 70 75 80 I C - Amperes © 2021 Littelfuse, Inc. 85 90 95 100 320 60 I C = 100A 260 I C = 50A 220 20 220 200 0 20 55 td(off) 240 240 50 tfi RG = 4.7Ω , V GE = 15V VCE = 400V 40 40 0 340 200 25 50 75 100 TJ - Degrees Centigrade 125 150 t d(off) - Nanoseconds t d(off) - Nanoseconds 60 td(off) RG = 4.7Ω , VGE = 15V VCE = 400V t f i - Nanoseconds 340 140 t f i - Nanoseconds tfi t d(off) - Nanoseconds I C = 50A Eon - MilliJoules 6 4 75 100 TJ = 150ºC, VGE = 15V VCE = 400V 8 2 50 95 800 140 I C = 100A 25 90 160 10 1 85 Fig. 16. Inductive Turn-off Switching Times vs. Gate Resistance 5 3 80 I C - Amperes Fig. 15. Inductive Switching Energy Loss vs. Junction Temperature 4 75 IXXX140N65B4H1 Fig. 20. Inductive Turn-on Switching Times vs. Collector Current Fig. 19. Inductive Turn-on Switching Times vs. Gate Resistance 160 tri 140 120 120 100 80 I C = 100A 80 60 I C = 50A 60 40 40 20 20 t r i - Nanoseconds 100 8 10 12 14 16 18 60 td(on) 56 RG = 4.7Ω , VGE = 15V VCE = 400V t r i - Nanoseconds 52 100 I C = 100A 48 80 44 60 40 40 t d(on) - Nanoseconds 120 36 I C = 50A 20 32 50 75 100 44 60 40 36 TJ = 150ºC 32 55 60 65 70 75 80 I C - Amperes 160 25 TJ = 25ºC 80 50 Fig. 21. Inductive Turn-on Switching Times vs. Junction Temperature tri 48 20 20 RG - Ohms 140 52 100 40 0 6 td(on) RG = 4.7Ω , VGE = 15V VCE = 400V 125 150 TJ - Degrees Centigrade Littelfuse reserves the right to change limits, test conditions, and dimensions. 85 90 95 100 t d(on) - Nanoseconds 120 4 56 tri td(on) TJ = 150ºC, V GE = 15V VCE = 400V t d(on) - Nanoseconds t r i - Nanoseconds 140 140 IXXX140N65B4H1 Fig. 23. Reverse Recovery Charge vs. -diF/dt Fig. 22. Diode Forward Characteristics 5.0 500 400 I F = 100A TJ = 150ºC VR = 400V 4.5 75A TJ = 25ºC 4.0 TJ = 150ºC I F (A) QRR (µC) 300 200 50A 3.5 3.0 100 2.5 0 2.0 0 1 2 3 4 5 6 300 400 600 700 800 900 Fig. 25. Reverse Recovery Time vs. -diF/dt Fig. 24. Reverse Recovery Current vs. -diF/dt 55 300 TJ = 150ºC V R = 400V 50 TJ = 150ºC VR = 400V 280 75A I F = 100A 260 45 50A 240 40 tRR (ns) I RR (A) 500 -diF/ dt (A/µs) VF (V) 35 I F = 100A 220 200 75A 30 180 25 50A 160 140 20 300 400 500 600 700 800 300 900 Fig. 26. Dynamic Parameters QRR, IRR vs. Junction Temperature 1.0 900 -diF/dt (A/µs) Fig. 27. Maximum Transient Thermal Impedance (Diode) aaa 0.4 1.1 VR = 400V IF = 100A -di F /dt = 600A/µs 0.9 Z(th)JC - K / W 0.8 KF 0.7 0.6 Fig. 11. 400Maximum 500 Transient 600 Thermal 700 Impedance 800 1 diF/dt (A/µs) KF IRR 0.1 0.5 0.4 0.3 K F QRR 0.2 0 20 40 60 80 TJ (ºC) © 2021 Littelfuse, Inc. 100 120 140 160 0.01 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS REF: IXX_140N65B4H1(D8-Z43) 1-7-21 IXXX140N65B4H1 PLUS247TM Outline A E A2 E1 Q D2 R D 1 2 4 3 L1 L A1 C b e b2 3 PLCS 2 PLCS 2 PLCS b4 1 = Gate 2,4 = Collector 3 = Emitter Littelfuse reserves the right to change limits, test conditions, and dimensions. IXXX140N65B4H1 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. 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