IXXX200N60B3

Preliminary Technical Information XPTTM 600V IGBTs GenX3TM IXXK200N60B3 IXXX200N60B3 VCES IC110 VCE(sat) tfi(typ) Extreme Light Punch Through IGBT for 10-30kHz Switching = = ≤ = 600V 200A 1.7V 110ns TO-264 (IXXK) Symbol Test Conditions VCES VCGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1MΩ Maximum Ratings 600 600 V V VGES VGEM Continuous Transient ±20 ±30 V V IC25 ILRMS IC110 ICM TC = 25°C (Chip Capability) Leads Current Limit TC = 110°C TC = 25°C, 1ms 380 160 200 900 A A A A IA EAS TC = 25°C TC = 25°C 100 1 A J SSOA (RBSOA) VGE = 15V, TVJ = 150°C, RG = 1Ω Clamped Inductive Load ICM = 400 @VCE ≤ VCES A tsc (SCSOA) VGE = 15V, VCE = 360V, TJ = 150°C RG = 10Ω, Non Repetitive 10 μs PC TC = 25°C 1630 W -55 ... +175 175 -55 ... +175 °C °C °C 300 260 °C °C 1.13/10 Nm/lb.in. 20..120 /4.5..27 N/lb. 10 6 g g TJ TJM Tstg TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Md Mounting Torque (TO-264) FC Mounting Force Weight TO-264 PLUS247 (PLUS247) G C E PLUS247 (IXXX) G Characteristic Values Min. Typ. Max. BVCES IC = 250μA, VGE = 0V 600 VGE(th) IC = 250μA, VCE = VGE 3.5 ICES VCE = VCES, VGE = 0V IGES VCE = 0V, VGE = ±20V VCE(sat) IC = 100A, VGE = 15V, Note 1 TJ = 150°C © 2013 IXYS CORPORATION, All Rights Reserved V 50 μA 3 mA TJ = 150°C 1.40 1.58 C E Tab E = Emitter Tab = Collector Features z z z z z z International Standard Packages Optimized for 10-30kHz Switching Square RBSOA Avalanche Rated Short Circuit Capability High Current Handling Capability Advantages z High Power Density Low Gate Drive Requirement Applications V 6.0 G G = Gate C = Collector z Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Tab ±200 nA 1.70 V V z z z z z z z z Power Inverters UPS Motor Drives SMPS PFC Circuits Battery Chargers Welding Machines Lamp Ballasts DS100372A(02/13) IXXK200N60B3 IXXX200N60B3 Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 27 IC = 60A, VCE = 10V, Note 1 Cies Coes Cres VCE = 25V, VGE = 0V, f = 1MHz Qg(on) Qge Qgc IC = 200A, VGE = 15V, VCE = 0.5 • VCES td(on) tri Eon td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff Inductive load, TJ = 25°C IC = 100A, VGE = 15V VCE = 360V, RG = 1Ω Note 2 Inductive load, TJ = 150°C IC = 100A, VGE = 15V VCE = 360V, RG = 1Ω Note 2 RthJC RthCS TO-264 Outline 45 S 9970 570 183 pF pF pF 315 98 130 nC nC nC 48 100 2.85 160 110 2.90 ns ns mJ ns ns mJ 4.40 46 94 4.40 180 215 3.45 ns ns mJ ns ns mJ 0.15 0.092 °C/W °C/W Terminals: 1 = Gate 2,4 = Collector 3 = Emitter PLUS247TM Outline Notes: 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. 2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG. Terminals: 1 - Gate 2 - Collector 3 - Emitter Dim. PRELIMANARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. A A1 A2 b b1 b2 C D E e L L1 Q R Millimeter Min. Max. 4.83 5.21 2.29 2.54 1.91 2.16 1.14 1.40 1.91 2.13 2.92 3.12 0.61 0.80 20.80 21.34 15.75 16.13 5.45 BSC 19.81 20.32 3.81 4.32 5.59 6.20 4.32 4.83 Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 0.244 .170 .190 IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXXK200N60B3 IXXX200N60B3 Fig. 2. Extended Output Characteristics @ T J = 25ºC Fig. 1. Output Characteristics @ T J = 25ºC 350 200 VGE = 15V 13V 12V 300 150 11V 100 10V 11V 200 10V 150 100 9V 50 12V 250 IC - Amperes IC - Amperes VGE = 15V 13V 9V 50 8V 8V 7V 6V 0 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 0 2 4 6 Fig. 3. Output Characteristics @ T J = 150ºC 200 VGE = 15V 13V 12V 10 12 14 Fig. 4. Dependence of VCE(sat) on Junction Temperature 1.5 VGE = 15V 1.4 11V VCE(sat) - Normalized 150 IC - Amperes 8 VCE - Volts VCE - Volts 10V 100 9V I 1.3 C = 200A 1.2 1.1 I 1.0 C = 150A I C 0.9 50 8V = 100A 0.8 7V 5V 0 0 0.4 0.8 1.2 1.6 2 2.4 0.7 -50 2.8 -25 0 25 VCE - Volts Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage 6.0 4.5 140 IC - Amperes VCE - Volts 125 150 175 180 160 4.0 3.5 C 100 Fig. 6. Input Admittance 5.0 I 75 200 TJ = 25ºC 5.5 3.0 50 TJ - Degrees Centigrade = 200A 120 100 TJ = 150ºC 25ºC 80 - 40ºC 60 2.5 150A 2.0 40 100A 1.5 20 1.0 0 8 9 10 11 12 VGE - Volts © 2013 IXYS CORPORATION, All Rights Reserved 13 14 15 4 5 6 7 8 VGE - Volts 9 10 11 IXXK200N60B3 IXXX200N60B3 Fig. 7. Transconductance Fig. 8. Gate Charge 110 16 100 TJ = - 40ºC, 25ºC, 150ºC VCE = 300V 14 I C = 200A 80 12 70 10 VGE - Volts g f s - Siemens 90 60 50 40 30 I G = 10mA 8 6 4 20 2 10 0 0 0 20 40 60 80 100 120 140 160 180 0 200 40 80 120 160 200 240 280 IC - Amperes QG - NanoCoulombs Fig. 9. Capacitance Fig. 10. Reverse-Bias Safe Operating Area 320 100,000 Capacitance - PicoFarads f = 1 MHz 400 Cies 300 IC - Amperes 10,000 200 Coes 1,000 100 TJ = 150ºC RG = 1Ω dv / dt < 10V / ns Cres 100 0 5 10 15 20 25 30 35 0 100 40 200 300 VCE - Volts 400 500 600 VCE - Volts Fig. 11. Forward-Bias Safe Operating Area Fig. 12. Maximum Transient Thermal Impedance 1000 0.1 VCE(sat) Limit 25µs 100µs ID - Amperes External Lead Limit 10 1ms Z(th)JC - ºC / W 100 0.01 0.001 10ms 1 TJ = 175ºC DC TC = 25ºC Single Pulse 0.1 1 10 100 1000 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 0.0001 0.00001 0.0001 0.001 0.01 0.1 Pulse Width - Seconds 1 10 IXXK200N60B3 IXXX200N60B3 Fig. 13. Inductive Switching Energy Loss vs. Gate Resistance 5.0 Eoff --- 6 TJ = 150ºC , VGE = 15V VCE = 360V 3.0 3 2.5 2 I C 3 4 5 6 7 3.0 3 TJ = 25ºC 2.5 1 8 9 1.5 50 10 55 60 65 70 RG - Ohms 4.0 2 2.0 I C = 50A 1.5 75 100 125 t f i - Nanoseconds Eoff - MilliJoules 2.5 td(off) - - - 500 VCE = 360V I 1 200 0 150 160 I C VCE = 360V 450 260 400 240 350 100 2 3 4 5 220 220 200 180 TJ = 25ºC 10 IC - Amperes © 2013 IXYS CORPORATION, All Rights Reserved 95 VCE = 360V 260 240 I C = 50A I C = 100A 150 50 90 td(off) - - - - 180 120 100 85 tfi RG = 1Ω , VGE = 15V 200 100 60 280 200 140 80 9 250 100 75 8 220 160 70 7 300 140 65 6 160 140 25 50 75 100 TJ - Degrees Centigrade 125 120 150 t d(off) - Nanoseconds 260 t d(off) - Nanoseconds t f i - Nanoseconds td(off) - - - - 280 TJ = 150ºC 60 200 Fig. 18. Inductive Turn-off Switching Times vs. Junction Temperature t f i - Nanoseconds tfi RG = 1Ω , VGE = 15V 55 = 100A RG - Ohms 380 50 400 300 1 Fig. 17. Inductive Turn-off Switching Times vs. Collector Current 180 = 50A 240 TJ - Degrees Centigrade 300 C 280 t d(off) - Nanoseconds 3 Eon - MilliJoules I C = 100A 340 0 100 95 TJ = 150ºC, VGE = 15V 320 4 3.0 50 90 600 tfi VCE = 360V 25 85 360 ---- RG = 1Ω , VGE = 15V 3.5 80 Fig. 16. Inductive Turn-off Switching Times vs. Gate Resistance 5 Eon 75 IC - Amperes Fig. 15. Inductive Switching Energy Loss vs. Junction Temperature Eoff 2 1 0 2 TJ = 150ºC 2.0 = 50A 1.5 1 4 VCE = 360V Eon - MilliJoules 4 Eon - MilliJoules 3.5 5 ---- 5 I C = 100A 2.0 Eon RG = 1Ω , VGE = 15V 3.5 Eoff - MilliJoules Eon - Eoff 4.0 Eoff - MilliJoules 4.0 7 4.5 Fig. 14. Inductive Switching Energy Loss vs. Collector Current IXXK200N60B3 IXXX200N60B3 Fig. 19. Inductive Turn-on Switching Times vs. Gate Resistance 180 tri td(on) - - - - 105 VCE = 360V I C 85 = 100A 100 75 I 80 C = 50A 65 60 55 40 45 20 35 1 2 3 4 5 6 7 8 9 80 46 TJ = 25ºC 60 44 TJ = 150ºC 40 42 20 40 0 10 50 55 60 65 70 75 80 85 90 95 t d(on) - Nanoseconds 120 48 VCE = 360V t d(on) - Nanoseconds 95 50 td(on) - - - - RG = 1Ω , VGE = 15V 100 t r i - Nanoseconds tri TJ = 150ºC, VGE = 15V 140 t r i - Nanoseconds 120 115 160 Fig. 20. Inductive Turn-on Switching Times vs. Collector Current 38 100 IC - Amperes RG - Ohms Fig. 21. Inductive Turn-on Switching Times vs. Junction Temperature 150 52 tri td(on) - - - - RG = 1Ω , VGE = 15V VCE = 360V 110 I C 50 48 = 100A 90 46 70 44 50 42 t d(on) - Nanoseconds t r i - Nanoseconds 130 I C = 50A 30 40 10 25 50 75 100 125 38 150 TJ - Degrees Centigrade IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: IXX_200N60B3(91)8-18-11 Disclaimer Notice - Information furnished is believed to be accurate and reliable. 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