IXYA20N120C4HV

IXYA20N120C4HV IXYP20N120C4 1200V XPTTM GenX4TM IGBT High-Speed IGBT for 20-50 kHz Switching VCES = IC110 = VCE(sat)  tfi(typ) = 1200V 20A 2.5V 58ns TO-263HV (IXYA..HV) G Symbol Test Conditions VCES VCGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M VGES VGEM E Maximum Ratings 1200 1200 V V Continuous Transient ±20 ±30 V V IC25 IC110 ICM TC = 25°C TC = 110°C TC = 25°C, 1ms 68 20 120 A A A SSOA (RBSOA) VGE = 15V, TVJ = 150°C, RG = 10 Clamped Inductive Load ICM = 40 VCE  0.8 • VCES A PC TC = 25°C 375 W -55 ... +175 175 -55 ... +175 °C °C °C 300 260 °C °C 1.13/10 10..65 / 22..14.6 Nm/lb.in N/lb 2.5 3.0 g g TJ TJM Tstg TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Md FC Mounting Torque (TO-220) Mounting Force (TO-263HV) Weight TO-263HV TO-220 C (Tab) TO-220 (IXYP) G C E G = Gate E = Emitter C (Tab) D = Collector Tab = Collector Features    Optimized for 20-50kHz Switching Positive Thermal Coefficient of Vce(sat) International Standard Packages Advantages   Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVCES IC = 250A, VGE = 0V 1200 VGE(th) IC = 250A, VCE = VGE 4.0 ICES VCE = VCES, VGE = 0V V 6.5 25 A 5 mA TJ = 150C IGES VCE = 0V, VGE = 20V VCE(sat) IC = 20A, VGE = 15V, Note 1 TJ = 150C © 2020IXYS CORPORATION, All Rights Reserved V 100 2.1 2.5 2.5 nA V V High Power Density Low Gate Drive Requirement Applications        Power Inverters UPS Motor Drives SMPS Battery Chargers Welding Machines Lamp Ballasts DS100927B(2/20) IXYA20N120C4HV IXYP20N120C4 Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 7.5 IC = 20A, VCE = 10V, Note 1 Cies Coes Cres VCE = 25V, VGE = 0V, f = 1MHz Qg(on) Qge Qgc IC = 20A, VGE = 15V, VCE = 0.5 • VCES td(on) tri Eon td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff RthJC RthCS Notes: Inductive load, TJ = 25°C IC = 20A, VGE = 15V VCE = 0.8 • VCES, RG = 10 Note 2 Inductive load, TJ = 125°C IC = 20A, VGE = 15V VCE = 0.8 • VCES, RG = 10 Note 2 TO-220 12.5 S 890 95 33 pF pF pF 44 8 20 nC nC nC 14 53 4.4 160 58 1.0 ns ns mJ ns ns mJ 13 37 4.9 200 86 1.6 ns ns mJ ns ns mJ 0.50 0.40 °C/W °C/W 1. Pulse test, t  300µs, duty cycle, d  2%. 2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXYA20N120C4HV IXYP20N120C4 Fig. 1. Output Characteristics @ TJ = 25oC Fig. 2. Extended Output Characteristics @ TJ = 25oC 40 VGE = 15V 13V 12V 35 11V 10V 25 9V 20 14V 80 I C - Amperes I C - Amperes 30 V GE = 15V 100 15 8V 13V 60 12V 11V 40 10V 10 20 5 0 8V 7V 0 0 0.5 1 1.5 2 2.5 3 3.5 0 2 4 8 10 12 14 16 VCE - Volts Fig. 3. Output Characteristics @ TJ = 150oC Fig. 4. Dependence of VCE(sat) on Junction Temperature 2.0 VGE = 15V 13V 12V 10V 25 20 9V 15 8V 10 7V 6V 0.5 1 1.5 2 2.5 3 3.5 4 175 1.4 I C = 20A 1.2 1.0 I C = 10A 0.6 -50 4.5 -25 0 25 50 75 100 125 TJ - Degrees Centigrade VCE - Volts Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage 4.5 150 1.6 0.8 5 0 20 I C = 40A 11V 30 18 VGE = 15V 1.8 VCE(sat) - Normalized 35 0 6 VCE - Volts 40 I C - Amperes 9V 7V Fig. 6. Input Admittance 60 o o TJ = 25 C TJ = - 40 C 4.0 50 3.5 40 o 25 C o I C - Amperes VCE - Volts 150 C I C = 40A 3.0 30 20 2.5 20A 10 2.0 10A 0 1.5 7 8 9 10 11 12 VGE - Volts © 2020IXYS CORPORATION, All Rights Reserved 13 14 15 4 5 6 7 8 9 VGE - Volts 10 11 12 13 IXYA20N120C4HV IXYP20N120C4 Fig. 7. Transconductance Fig. 8. Gate Charge 16 18 16 o 14 I C = 20A I G = 10mA 12 12 o 25 C VGE - Volts g f s - Siemens VCE = 600V 14 TJ = - 40 C 10 8 o 150 C 6 10 8 6 4 4 2 2 0 0 0 5 10 15 20 25 30 35 40 45 50 0 5 10 15 I C - Amperes 20 25 30 35 40 45 QG - NanoCoulombs Fig. 10. Reverse-Bias Safe Operating Area Fig. 9. Capacitance 1,000 45 Cies 40 Capacitance - PicoFarads 35 I C - Amperes 30 Coes 100 25 20 15 10 Cres f = 1 MHz 5 10 0 5 10 15 20 VCE - Volts 25 30 35 0 200 40 o TJ = 150 C RG = 10Ω dv / dt < 10V / ns 300 400 500 Fig. 11. Maximum Transient Thermal Impedance 600 700 800 900 1000 1100 1200 VCE - Volts 1 Fig. 11. Maximum Transient Thermal Impedance aaa Z (th)JC - K / W 0.6 0.1 0.01 0.00001 0.0001 0.001 0.01 Pulse Width - Second IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 0.1 1 IXYA20N120C4HV IXYP20N120C4 Eoff 6 Eon Eoff 20 3 12 2 14 VCE = 960V 3.0 12 2.5 10 2.0 8 o TJ = 125 C 1.5 6 8 1.0 I C = 20A 1 4 0 6 20 30 50 60 70 0.0 80 0 10 20 30 35 Fig. 15. Inductive Turn-off Switching Times vs. Gate Resistance 14 140 12 120 tfi Eon 2 6 1 td(off) o 50 75 100 350 80 60 40 2 125 20 tfi 200 150 10 20 30 40 t d(off) 100 70 80 180 60 160 o TJ = 25 C 40 140 20 120 0 100 30 I C - Amperes © 2020IXYS CORPORATION, All Rights Reserved 35 40 220 I C = 20A 80 200 60 180 I C = 40A 40 20 160 140 0 25 50 75 TJ - Degrees Centigrade 100 120 125 t d(off) - Nanoseconds 80 240 td(off) VCE = 960V t d(off) - Nanoseconds 200 25 60 RG = 10Ω, VGE = 15V 220 VCE = 960V 100 20 tfi 240 t f i - Nanoseconds o 50 Fig. 17. Inductive Turn-off Switching Times vs. Junction Temperature 120 260 RG = 10Ω,VGE = 15V TJ = 125 C 250 I C = 40A RG - Ohms Fig. 16. Inductive Turn-off Switching Times vs. Collector Current 140 300 I C = 20A TJ - Degrees Centigrade 15 400 TJ = 125 C, VGE = 15V 100 4 I C = 20A 0 t f i - Nanoseconds 8 120 450 t d(off) - Nanoseconds 3 Eon - MilliJoules 10 I C = 40A 25 40 VCE = 960V 4 10 25 Fig. 14. Inductive Switching Energy Loss vs. Junction Temperature VCE = 960V Eoff - MilliJoules 15 I C - Amperes RG = 10Ω,VGE = 15V 160 2 TJ = 25 C RG - Ohms Eoff 5 40 4 o 0.5 0 10 t f i - Nanoseconds Eon - MilliJoules 16 E on - MilliJoules I C = 40A 16 Eon RG = 10Ω,VGE = 15V 3.5 VCE = 960V 4 18 4.0 24 o TJ = 125 C , VGE = 15V 5 4.5 28 Eoff - MilliJoules 7 E off - MilliJoules Fig. 13. Inductive Switching Energy Loss vs. Collector Current Fig. 12. Inductive Switching Energy Loss vs. Gate Resistance IXYA20N120C4HV IXYP20N120C4 Fig. 18. Inductive Turn-on Switching Times vs. Gate Resistance 320 tri 280 120 80 td(on) tri 70 100 o TJ = 125 C, VGE = 15V 50 160 40 I C = 40A 120 30 I C = 20A 80 20 40 24 o TJ = 25 C VCE = 960V 80 20 60 16 o TJ = 125 C 40 12 20 8 10 0 0 0 10 20 30 40 50 60 70 tri 120 td(on) RG = 10Ω, VGE = 15V VCE = 960V 25 30 35 40 32 28 24 80 20 60 16 40 20 12 I C = 20A 20 t d(on) - Nanoseconds I C = 40A 100 15 I C - Amperes Fig. 20. Inductive Turn-on Switching Times vs. Junction Temperature 140 4 10 80 RG - Ohms t r i - Nanoseconds td(on) t d(on) - Nanoseconds 200 28 RG = 10Ω, VGE = 15V 60 t r i - Nanoseconds VCE = 960V t d(on) - Nanoseconds t r i - Nanoseconds 240 Fig. 19. Inductive Turn-on Switching Times vs. Collector Current 8 0 25 50 75 100 4 125 TJ - Degrees Centigrade IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: IXY_20N120C4H1 (Y14-RY92) 8-24-18 IXYA20N120C4HV IXYP20N120C4 TO-263HV Outline 1 = Gate 2 = Emitter 3 = Collector TO-220 Outline 1 = Gate 2 = Collector 3 = Emitter © 2020IXYS CORPORATION, All Rights Reserved IXYA20N120C4HV IXYP20N120C4 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.