IXYH120N65A5

IXYH120N65A5 XPTTM 650V GenX5TM IGBT VCES = IC110 = VCE(sat)   tfi(typ) = Extreme Light Punch Through IGBT for up to 10kHz Switching 650V 120A 1.35V 160ns TO-247 (IXYH) Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M 650 650 V V VGES VGEM Continuous Transient ±20 ±30 V V IC25 ILRMS IC110 ICM TC = 25°C (Chip Capability) Terminal Current Limit TC = 110°C TC = 25°C, 1ms 290 160 120 790 A A A A SSOA (RBSOA) VGE = 15V, TVJ = 150°C, RG = 3 Clamped Inductive Load ICM = 240 VCE  VCES A PC TC = 25°C 830 W -55 ... +175 175 -55 ... +175 °C °C °C 300 °C TJ TJM Tstg TL Md Maximum Lead Temperature for Soldering 1.6 mm (0.062 in.) from Case for 10s G C C (Tab) E G = Gate E = Emitter C = Collector Tab = Collector Features     Optimized for Low Frequency High Current Switching High Surge Current Capability Square RBSOA International Standard Package Advantages Mounting Torque 1.13 / 10 Nm/lb.in 6 g Weight   High Power Density Low Gate Drive Requirement Applications  Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVCES IC = 250A, VGE = 0V 650 VGE(th) IC = 250A, VCE = VGE 3.7 ICES VCE = VCES, VGE = 0V VCE = 0V, VGE = 20V VCE(sat) IC = 75A, VGE = 15V, Note 1 TJ = 150C ©2021 Littelfuse, Inc.  V 5.8 V 5 750 A A 100 nA TJ = 150C IGES  1.22 1.30 1.35      Power Inverters UPS Motor Drives SMPS PFC Circuits Battery Chargers Welding Machines Lamp Ballasts V V DS101026B(7/21) IXYH120N65A5 Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 48 IC = 60A, VCE = 10V, Note 1 Cies Coes Cres VCE = 25V, VGE = 0V, f = 1MHz Qg(on) Qge Qgc IC = 90A, VGE = 15V, VCE = 0.5 • VCES td(on) tri Eon td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff Inductive load, TJ = 25°C IC = 60A, VGE = 15V VCE = 400V, RG = 3 Note 2 Inductive load, TJ = 150°C IC = 60A, VGE = 15V VCE = 400V, RG = 3 Note 2 80 S 5060 255 190 pF pF pF 314 41 157 nC nC nC 45 42 1.25 370 160 3.20 ns ns mJ ns ns mJ 33 42 2.30 360 290 4.70 ns ns mJ ns ns mJ 0.21 0.18 °C/W C/W RthJC RthCS Notes: 1. Pulse test, t  300µs, duty cycle, d  2%. 2. Switching times & energy losses may increase for higher V CE(clamp), TJ or RG. Littelfuse reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXYH120N65A5 Fig. 1. Output Characteristics @ TJ = 25oC Fig. 2. Extended Output Characteristics @ TJ = 25oC 240 VGE = 15V 13V 12V 11V 200 800 10V 9V I C - Amperes I C - Amperes 160 120 8V 80 700 VGE = 15V 600 14V 13V 500 12V 400 11V 10V 300 9V 7V 200 8V 40 100 7V 6V 0 0 0 0.4 0.8 1.2 1.6 2 2.4 0 2 4 6 8 10 12 14 18 VCE - Volts Fig. 3. Output Characteristics @ TJ = 150oC Fig. 4. Dependence of VCE(sat) on Junction Temperature 20 22 1.8 V GE = 15V 13V 12V 11V 200 VGE = 15V 10V 1.6 I C = 240A 120 VCE(sat) - Normalized 9V 160 8V 80 7V 40 0.4 0.8 1.2 1.6 2 2.4 2.8 1.2 I C = 120A 1.0 I C = 60A 5V 0 1.4 0.8 6V 0 0.6 -50 3.2 -25 0 VCE - Volts 25 50 75 100 125 150 175 TJ - Degrees Centigrade Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage Fig. 6. Input Admittance 4.0 240 TJ = 3.6 VCE = 10V 25oC TJ = - 40oC 25oC 200 150oC 3.2 160 2.4 I C - Amperes 2.8 VCE - Volts 16 VCE - Volts 240 I C - Amperes 6V I C = 240A 2.0 120 80 120A 1.6 40 1.2 60A 0 0.8 6 7 8 9 10 11 VGE - Volts ©2021 Littelfuse, Inc. 12 13 14 15 4.0 5.0 6.0 7.0 VGE - Volts 8.0 9.0 10.0 IXYH120N65A5 Fig. 7. Transconductance Fig. 8. Gate Charge 120 16 TJ = - 40oC VCE = 10V VCE = 325V I C = 120A I G = 10mA 14 100 60 VGE - Volts g f s - Siemens 12 25oC 80 150oC 40 10 8 6 4 20 2 0 0 0 20 40 60 80 100 120 140 0 160 50 100 I C - Amperes 150 200 250 300 QG - NanoCoulombs Fig. 9. Capacitance Fig. 10. Reverse-Bias Safe Operating Area 280 10,000 200 I C - Amperes Capacitance - PicoFarads 240 C ies 1,000 160 120 80 Coes TJ = 150oC RG = 3Ω dv / dt < 10V / ns 40 f = 1 MHz Cres 100 0 0 5 10 15 20 25 30 35 40 200 300 400 500 600 700 VCE - Volts VCE - Volts Fig. 11. Maximum Transient Thermal Impedance 0.4 Z(th)JC - K / W 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 Pulse Width - Seconds Littelfuse reserves the right to change limits, test conditions, and dimensions. 0.1 1 10 IXYH120N65A5 Fig. 13. Inductive Switching Energy Loss vs. Collector Current Fig. 12. Inductive Switching Energy Loss vs. Gate Resistance 12 Eoff Eon TJ = 150oC , VGE = 15V VCE = 400V 10 9 9 6 7 5 6 4 5 3 I C = 60A 4 3 2 4 6 8 10 12 14 16 18 3.5 6 3 TJ = 150oC 5 2 TJ = 25oC 3 2 1 1 0.5 1 0 20 0 20 30 40 50 340 5 320 4.5 100 1000 tfi td(off) 900 TJ = 150oC, VGE = 15V VCE = 400V 300 3 4 2.5 3 2 t f i - Nanoseconds 5 I C = 60A 2 1.5 1 1 0 800 75 100 125 700 I C = 60A 260 600 240 220 400 200 300 200 2 150 4 6 8 10 td(off) RG = 3Ω , VGE = 15V VCE = 400V 600 380 560 340 520 300 440 TJ = 150oC 250 400 360 TJ = 25oC 240 60 I C - Amperes ©2021 Littelfuse, Inc. 70 80 90 100 400 380 I C = 60A 360 340 320 I C = 100A 140 100 60 td(off) 180 280 50 tfi 220 100 50 20 RG = 3Ω , VGE = 15V VCE = 400V 260 320 40 18 420 300 150 30 16 300 280 260 25 50 75 100 TJ - Degrees Centigrade 125 150 t d(off) - Nanoseconds 480 t d(off) - Nanoseconds 350 t f i - Nanoseconds 400 14 Fig. 17. Inductive Turn-off Switching Times vs. Junction Temperature 500 tfi 12 RG - Ohms Fig. 16. Inductive Turn-off Switching Times vs. Collector Current 450 500 I C = 100A 180 0.5 50 280 TJ - Degrees Centigrade t f i - Nanoseconds 90 t d(off) - Nanoseconds 3.5 20 80 4 I C = 100A Eon - MilliJoules Eoff - MilliJoules 5.5 6 200 70 Fig. 15. Inductive Turn-off Switching Times vs. Gate Resistance Eoff Eon RG = 3Ω ,VGE = 15V VCE = 400V 25 60 I C - Amperes 10 7 1.5 2 Fig. 14. Inductive Switching Energy Loss vs. Junction Temperature 8 2.5 4 RG - Ohms 9 4 Eon - MilliJoules I C = 100A 8 4.5 Eoff Eon RG = 3Ω , VGE = 15V VCE = 400V 7 Eon - MilliJoules 7 5 8 8 9 Eoff - MilliJoules 10 Eoff - MilliJoules 11 10 IXYH120N65A5 Fig. 18. Inductive Turn-on Switching Times vs. Gate Resistance 160 90 td(on) tri 60 I C = 100A 80 50 60 40 50 TJ = 25oC 40 40 30 30 20 TJ = 20 6 60 20 I C = 60A 4 8 10 12 14 16 18 150oC 0 20 20 20 30 40 RG - Ohms 90 100 100 60 50 I C = 100A 50 40 I C = 60A 40 t d(on) - Nanoseconds t r i - Nanoseconds 80 td(on) 60 80 30 30 20 25 70 120 70 RG = 3Ω , VGE = 15V VCE = 400V 70 60 Fig. 21. Maximum Peak Load Current vs. Frequency I C - Amperes tri 50 I C - Amperes Fig. 20. Inductive Turn-on Switching Times vs. Junction Temperature 80 60 t d(on) - Nanoseconds 100 t d(on) - Nanoseconds 70 td(on) RG = 3Ω , VGE = 15V VCE = 400V 80 120 2 70 80 TJ = 150oC, V GE = 15V VCE = 400V 40 100 t r i - Nanoseconds tri 140 t r i - Nanoseconds Fig. 19. Inductive Turn-on Switching Times vs. Collector Current 50 75 100 125 150 TJ - Degrees Centigrade 60 Triangular Wave TJ = 150ºC TC = 75ºC VCE = 400V VGE = 15V RG = 3Ω Duty Cycle = 0.5 40 20 Square Wave 0 10 40 100 400 fmax - KiloHertz Littelfuse reserves the right to change limits, test conditions, and dimensions. IXYS REF: IXY_120N65A5 (608-CY42) 10-12-20 IXYH120N65A5 TO-247 Outline 1 - Gate 2,4 - Collector 3 -Emitter Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. ©2021 Littelfuse, Inc.