IXYH55N120C4

IXYH55N120C4 1200V XPTTM Gen 4 IGBT VCES = IC110 = VCE(sat)  tfi(typ) = High Speed IGBT for 20-50kHz Switching 1200V 55A 2.5V 42ns TO-247 (IXYH) Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M VGES VGEM 1200 1200 V V Continuous Transient ±20 ±30 V V IC25 IC110 ICM TC = 25°C TC = 110°C TC = 25°C, 1ms 140 55 290 A A A SSOA (RBSOA) VGE = 15V, TVJ = 150°C, RG = 5 Clamped Inductive Load ICM = 110 VCE  0.8 • VCES A PC TC = 25°C 650 W -55 ... +175 175 -55 ... +175 °C °C °C 300 °C 1.13 / 10 Nm/lb.in 6 g TJ TJM Tstg TL Maximum Lead Temperature for Soldering 1.6 mm (0.062 in.) from Case for 10s Md Mounting Torque G C C (Tab) E G = Gate E = Emitter C = Collector Tab = Collector Features    Optimized for Low Switching Losses Positive Thermal Coefficient of Vce(sat) International Standard Package Advantages Weight   High Power Density Low Gate Drive Requirement Applications   Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVCES IC = 250A, VGE = 0V 1200 VGE(th) IC = 250A, VCE = VGE 4.0 ICES VCE = VCES, VGE = 0V VCE = 0V, VGE = 20V VCE(sat) IC   = 55A, VGE = 15V, Note 1 TJ = 150C ©2021 Littelfuse, Inc.  V 6.5 V 20 500 A A 100 nA TJ = 150C IGES  2.1 2.6 2.5   Power Inverters UPS Motor Drives SMPS PFC Circuits Battery Chargers Welding Machines Lamp Ballasts V V DS100956C(10/21) IXYH55N120C4 Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 18 IC = 55A, VCE = 10V, Note 1 Cies Coes Cres VCE = 25V, VGE = 0V, f = 1MHz Qg(on) Qge Qgc IC = 55A, VGE = 15V, VCE = 0.5 • VCES td(on) tri Eon td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff Inductive load, TJ = 25°C IC = 40A, VGE = 15V VCE = 0.5 • VCES, RG = 5 Note 2 Inductive load, TJ = 150°C IC = 40A, VGE = 15V VCE = 0.5 • VCES, RG = 5 Note 2 30 S 2300 125 77 pF pF pF 114 19 49 nC nC nC 20 50 3.50 180 42 1.34 ns ns mJ ns ns mJ 20 34 4.80 200 123 2.50 ns ns mJ ns ns mJ 0.21 0.23 °C/W C/W RthJC RthCS Notes: 1. Pulse test, t  300µs, duty cycle, d  2%. 2. Switching times & energy losses may increase for higher V CE(clamp), TJ or RG. Littelfuse reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXYH55N120C4 Fig. 1. Output Characteristics @ TJ = 25oC Fig. 2. Extended Output Characteristics @ TJ = 25oC 11V VGE = 15V 13V 12V 100 IC - Amperes 60 9V 40 VGE = 15V 200 10V 80 I C - Amperes 240 8V 14V 13V 160 12V 120 11V 10V 80 9V 20 40 7V 6V 0 0 0.5 1 1.5 2 2.5 3 3.5 8V 7V 0 4 0 5 10 15 20 25 VCE - Volts VCE - Volts Fig. 3. Output Characteristics @ TJ = 150oC Fig. 4. Dependence of VCE(sat) on Junction Temperature 2.2 V GE = 15V 13V 12V 100 I C = 110A 1.8 VCE(sat) - Normalized 80 IC - Amperes VGE = 15V 2.0 11V 10V 60 9V 40 8V 1.6 1.4 I C = 55A 1.2 1.0 20 7V 0.8 I C = 27.5A 6V 0 0.6 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 -50 -25 0 25 VCE - Volts 50 75 100 125 150 175 TJ - Degrees Centigrade Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage Fig. 6. Input Admittance 5.0 100 TJ = 25oC 4.5 4.0 150oC 80 I C - Amperes I C = 110A 3.5 VCE - Volts TJ = - 40oC 25oC 3.0 2.5 55A 60 40 2.0 20 1.5 27.5A 0 1.0 7 8 9 10 11 VGE - Volts ©2021 Littelfuse, Inc. 12 13 14 15 4 5 6 7 8 VGE - Volts 9 10 11 IXYH55N120C4 Fig. 7. Transconductance Fig. 8. Gate Charge 16 45 TJ = - 40oC 40 35 12 30 25oC VGE - Volts g f s - Siemens VCE = 600V I C = 55A I G = 10mA 14 25 150oC 20 15 10 8 6 4 10 2 5 0 0 0 10 20 30 40 50 60 70 80 90 100 0 20 40 I C - Amperes 60 80 100 120 QG - NanoCoulombs Fig. 10. Reverse-Bias Safe Operating Area Fig. 9. Capacitance 10,000 120 C ies 1,000 80 I C - Amperes Capacitance - PicoFarads 100 Coes 100 60 40 Cres f = 1 MHz 10 0 5 10 15 20 25 TJ = 150oC RG = 5Ω dv / dt < 10V / ns 20 0 Fig. 11. Maximum Transient Thermal Impedance 30 35 40 200 300 400 500 600 700 800 900 1000 1100 1200 VCE - Volts VCE - Volts 1 Fig. 11. Maximum Transient Thermal Impedance aaa 0.4 Z(th)JC - K / W 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 Pulse Width - Seconds Littelfuse reserves the right to change limits, test conditions, and dimensions. 0.1 1 10 IXYH55N120C4 Fig. 13. Inductive Switching Energy Loss vs. Collector-Emitter Voltage Fig. 12. Inductive Switching Energy Loss vs. Collector Current 6 Eoff Eon RG = 5Ω , VGE = 15V VCE = 600V 10 Eoff Eon RG = 5Ω , VGE = 15V I C = 40A 4.0 15 3.5 TJ = 150oC 3 9 TJ = 25oC 2 6 9 8 TJ = 150oC 3.0 7 2.5 6 2.0 5 1.5 1 4 TJ = 25oC 3 1.0 0 0 20 30 40 50 60 70 20 5 16 4 12 3 8 I C = 40A 1 6 8 10 12 14 16 18 Eoff - MilliJoules 6 900 18 Eoff Eon RG = 5Ω ,VGE = 15V VCE = 600V 15 12 9 I C = 80A 2 1 0 0 20 6 3 I C = 40A 0 25 50 75 100 125 RG - Ohms TJ - Degrees Centigrade Fig. 16. Inductive Turn-off Switching Times vs. Gate Resistance Fig. 17. Inductive Turn-off Switching Times vs. Collector Current 170 440 tfi td(off) 120 240 I C = 40A 110 200 100 220 120 200 TJ = 150oC 80 180 TJ = 25oC 40 160 160 90 120 4 6 8 10 12 RG - Ohms ©2021 Littelfuse, Inc. 14 16 18 20 0 140 20 30 40 50 I C - Amperes 60 70 80 t d(off) - Nanoseconds 280 t d(off) - Nanoseconds I C = 80A td(off) RG = 5Ω , VGE = 15V VCE = 600V 360 320 130 240 tfi 160 140 150 200 400 TJ = 150oC, VGE = 15V VCE = 600V 2 1000 3 4 t f i - Nanoseconds Eoff - MilliJoules 800 Eon - MilliJoules 4 24 Eon - MilliJoules I C = 80A 150 700 Fig. 15. Inductive Switching Energy Loss vs. Junction Temperature 5 160 600 Fig. 14. Inductive Switching Energy Loss vs. Gate Resistance Eoff Eon TJ = 150oC , VGE = 15V VCE = 600V 4 500 VCE - Volts 2 t f i - Nanoseconds 400 I C - Amperes 7 6 3 0.5 80 Eon - MilliJoules 12 Eon - MilliJoules 4 Eoff - MilliJoules 5 Eoff - MilliJoules 4.5 18 IXYH55N120C4 Fig. 19. Inductive Turn-on Switching Times vs. Gate Resistance Fig. 18. Inductive Turn-off Switching Times vs. Junction Temperature 180 220 tri 200 I C = 40A 100 180 I C = 80A 80 60 160 50 I C = 80A 120 40 80 30 I C = 40A 40 40 20 I C = 40A 20 140 37.5 50 62.5 75 87.5 100 112.5 125 137.5 6 8 10 12 14 16 18 RG - Ohms Fig. 20. Inductive Turn-on Switching Times vs. Collector Current Fig. 21. Inductive Turn-on Switching Times vs. Junction Temperature tri 36 130 32 110 60 24 TJ = 150oC 90 20 16 30 12 10 40 50 60 70 80 I C - Amperes 30 I C = 80A 25 50 20 30 35 70 40 0 td(on) RG = 5Ω , VGE = 15V VCE = 600V 20 I C = 40A t d(on) - Nanoseconds 28 TJ = 25oC t d(on) - Nanoseconds 80 20 40 tri td(on) RG = 5Ω , VGE = 15V VCE = 600V 20 10 4 TJ - Degrees Centigrade 120 100 0 150 t r i - Nanoseconds 25 t r i - Nanoseconds t d(on) - Nanoseconds 120 td(on) TJ = 150oC, VGE = 15V VCE = 600V 160 t d(off) - Nanoseconds t f i - Nanoseconds 140 60 td(off) RG = 5Ω , VGE = 15V VCE = 600V t r i - Nanoseconds tfi 160 200 15 10 25 50 75 100 125 150 TJ - Degrees Centigrade Littelfuse reserves the right to change limits, test conditions, and dimensions. IXYS REF: IXY_55N120C4 (Y17-RY90) 10-20-21-A IXYH55N120C4 TO-247 Outline 1 - Gate 2,4 - Collector 3 -Emitter Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. ©2021 Littelfuse, Inc.