IXYH85N120C4

IXYH85N120C4 1200V XPTTM Gen 4 IGBT VCES = IC110 = VCE(sat)  tfi(typ) = High Speed Through IGBT for 20-50kHz Switching 1200V 85A 2.50V 37ns TO-247 (IXYH) Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M VGES VGEM 1200 1200 V V Continuous Transient ±20 ±30 V V IC25 ILRMS IC110 ICM TC= 25°C (Chip Capability) Terminal Current Limit TC = 110°C TC = 25°C, 1ms 240 160 85 420 A A A A SSOA (RBSOA) VGE = 15V, TVJ = 150°C, RG = 5 Clamped Inductive Load ICM = 170 0.8 • VCES A PC VCE  TC = 25°C TJ TJM Tstg TL Maximum Lead Temperature for Soldering 1.6 mm (0.062 in.) from Case for 10s G W -55 ... +175 175 -55 ... +175 °C °C °C 300 °C   1.13 / 10 Nm/lb.in 6 g Weight   BVCES IC = 250A, VGE = 0V 1200 VGE(th) IC = 250A, VCE = VGE 4.0 ICES VCE = VCES, VGE = 0V VCE = 0V, VGE = 20V VCE(sat) IC = 85A, VGE = 15V, Note 1 TJ = 150C ©2021 Littelfuse, Inc.  V 6.5 V    Power Inverters UPS Motor Drives SMPS PFC Circuits Battery Chargers Welding Machines Lamp Ballasts 25 A 1 mA TJ = 150C IGES  Characteristic Values Min. Typ. Max. High Power Density Low Gate Drive Requirement Applications  Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Optimized for Low Switching Losses Positive Thermal Coefficient of Vce(sat) International Standard Package Advantages  Mounting Torque C = Collector Tab = Collector Features  Md C (Tab) E G = Gate E = Emitter  1150 C 100 2.00 2.45 2.50 nA V V DS100952B(10/21) IXYH85N120C4 Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 30 IC = 60A, VCE = 10V, Note 1 Cies Coes Cres VCE = 25V, VGE = 0V, f = 1MHz Qg(on) Qge Qgc IC = 85A, VGE = 15V, VCE = 0.5 • VCES td(on) tri Eon td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff Inductive load, TJ = 25°C IC = 50A, VGE = 15V VCE = 0.5 • VCES, RG = 5 Note 2 Inductive load, TJ = 150°C IC = 50A, VGE = 15V VCE = 0.5 • VCES, RG = 5 Note 2 50 S 3560 215 140 pF pF pF 192 34 72 nC nC nC 35 60 4.30 280 37 2.00 ns ns mJ ns ns mJ 27 45 6.15 260 112 3.30 ns ns mJ ns ns mJ 0.21 0.13 °C/W C/W RthJC RthCS Notes: 1. Pulse test, t  300µs, duty cycle, d  2%. 2. Switching times & energy losses may increase for higher V CE(clamp), TJ or RG. Littelfuse reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXYH85N120C4 Fig. 1. Output Characteristics @ TJ = 25oC Fig. 2. Extended Output Characteristics @ TJ = 25oC 180 500 V GE = 15V 13V 12V 11V 160 140 450 10V 100 IC - Amperes IC - Amperes 120 9V 80 8V 60 40 7V 20 6V 0 0 0.5 1 1.5 2 V GE = 15V 400 2.5 350 14V 300 13V 250 12V 11V 200 150 10V 100 9V 50 8V 7V 0 3 3.5 0 2 4 6 8 10 14 16 18 VCE - Volts Fig. 3. Output Characteristics @ TJ = 150oC Fig. 4. Dependence of VCE(sat) on Junction Temperature 180 22 VGE = 15V 1.8 11V I C = 170A 120 10V 100 9V VCE(sat) - Normalized 140 80 8V 60 40 1.6 1.4 I C = 85A 1.2 1.0 7V 0.8 20 I C = 42.5A 6V 0 0.6 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 -50 -25 0 25 VCE - Volts 50 75 100 125 150 175 TJ - Degrees Centigrade Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage Fig. 6. Input Admittance 5.0 200 TJ = 4.5 180 25oC TJ = - 40oC 25oC 160 4.0 150oC 140 I C - Amperes 3.5 VCE - Volts 20 2.0 VGE = 15V 13V 12V 160 IC - Amperes 12 VCE - Volts I C = 170A 3.0 2.5 85A 120 100 80 60 2.0 40 1.5 20 42.5A 0 1.0 7 8 9 10 11 VGE - Volts ©2021 Littelfuse, Inc. 12 13 14 15 4 5 6 7 8 VGE - Volts 9 10 11 IXYH85N120C4 Fig. 7. Transconductance Fig. 8. Gate Charge 80 16 TJ = - 40oC 70 60 12 50 25oC VGE - Volts g f s - Siemens VCE = 600V I C = 85A I G = 10mA 14 40 150oC 30 10 8 6 20 4 10 2 0 0 0 20 40 60 80 100 120 140 0 20 40 60 I C - Amperes 80 100 120 140 160 180 200 1100 1200 QG - NanoCoulombs Fig. 10. Reverse-Bias Safe Operating Area Fig. 9. Capacitance 180 10,000 Cies 140 120 1,000 I C - Amperes Capacitance - PicoFarads 160 Coes 100 100 80 60 Cres TJ = 150oC RG = 5Ω dv / dt < 10V / ns 40 f = 1 MHz 20 10 0 0 5 10 15 20 25 30 35 40 200 300 400 500 600 700 800 900 1000 VCE - Volts VCE - Volts Fig. 11. Maximum Transient Thermal Impedance 0.4 Z(th)JC - K / W 0.1 0.01 0.001 0.00001 0.0001 0.001 Pulse Width - Second Littelfuse reserves the right to change limits, test conditions, and dimensions. 0.01 0.1 1 IXYH85N120C4 Fig. 12. Inductive Switching Energy Loss vs. Collector Current Fig. 13. Inductive Switching Energy Loss vs. Collector-Emitter Voltage 8 16 Eoff Eon RG = 5Ω , VGE = 15V VCE = 600V 8 TJ = 150oC 3 6 2 4 TJ = 25oC 30 40 50 60 70 80 90 8 TJ = 150oC 3 6 4 2 600 650 700 750 800 850 I C - Amperes VCE - Volts Fig. 14. Inductive Switching Energy Loss vs. Gate Resistance Fig. 15. Inductive Switching Energy Loss vs. Junction Temperature 27 8 Eoff Eon TJ = 150oC , VGE = 15V VCE = 600V 7 6 15 4 10 6 18 5 15 4 12 3 9 2 I C = 50A 2 21 I C = 100A 6 I C = 50A 5 1 0 0 4 6 8 10 12 14 16 18 3 0 20 0 25 50 75 Fig. 16. Inductive Turn-off Switching Times vs. Gate Resistance 800 td(off) 80 300 60 200 40 100 10 12 RG - Ohms ©2021 Littelfuse, Inc. 14 16 18 20 t f i - Nanoseconds 400 I C = 100A I C = 50A 340 td(off) 320 120 300 TJ = 100 150oC 280 80 260 60 240 TJ = 25oC 40 220 20 200 0 180 20 30 40 50 60 I C - Amperes 70 80 90 100 t d(off) - Nanoseconds 100 t d(off) - Nanoseconds t f i - Nanoseconds 140 500 8 tfi RG = 5Ω , VGE = 15V VCE = 600V 600 120 6 360 160 700 TJ = VGE = 15V VCE = 600V 4 150 180 150oC, 140 125 Fig. 17. Inductive Turn-off Switching Times vs. Collector Current 180 tfi 100 T J - Degrees Centigrade RG - Ohms 160 Eon - MilliJoules 20 Eoff - MilliJoules I C = 100A 24 Eoff Eon RG = 5Ω ,VGE = 15V VCE = 600V 25 8 900 9 30 Eon - MilliJoules Eoff - MilliJoules 4 1 100 12 10 10 TJ = 25oC 0 20 5 2 2 0 12 Eon - MilliJoules 10 1 Eoff Eon RG = 5Ω , VGE = 15V I C = 50A 12 5 4 14 6 Eon - MilliJoules Eoff - MilliJoules 6 14 Eoff - MilliJoules 7 7 IXYH85N120C4 Fig. 18. Inductive Turn-off Switching Times vs. Junction Temperature 160 320 300 RG = 5Ω , VGE = 15V VCE = 600V 280 100 260 I C = 100A I C = 50A 240 50 80 40 40 180 0 100 125 150 20 4 6 8 10 12 14 16 18 Fig. 20. Inductive Turn-on Switching Times vs. Collector Current Fig. 21. Inductive Turn-on Switching Times vs. Junction Temperature td(on) 50 160 46 140 42 80 34 60 30 40 26 TJ = 150oC 20 0 30 40 50 60 70 80 90 tri td(on) 50 RG = 5Ω , VGE = 15V VCE = 600V 45 I C = 100A 100 40 80 35 60 40 18 20 I C - Amperes 55 120 22 100 20 30 I C = 50A t d(on) - Nanoseconds 38 TJ = 25oC t d(on) - Nanoseconds 100 t r i - Nanoseconds tri 20 30 RG - Ohms RG = 5Ω , VGE = 15V VCE = 600V 120 I C = 50A TJ - Degrees Centigrade 160 140 60 120 200 75 70 I C = 100A 40 50 td(on) TJ = 150oC, VGE = 15V VCE = 600V 160 220 25 tri 200 60 20 80 t d(on) - Nanoseconds 120 80 240 t d(off) - Nanoseconds t f i - Nanoseconds td(off) t r i - Nanoseconds tfi 140 t r i - Nanoseconds Fig. 19. Inductive Turn-on Switching Times vs. Gate Resistance 25 20 25 50 75 100 125 150 TJ - Degrees Centigrade Littelfuse reserves the right to change limits, test conditions, and dimensions. IXYS REF: IXY_85N120C4 (N7-RY90) 10-14-21-B IXYH85N120C4 TO-247 Outline 1 - Gate 2,4 - Collector 3 -Emitter Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. ©2021 Littelfuse, Inc.