IXYH8N250C

Advance Technical Information IXYH8N250C High Voltage XPTTM IGBT VCES = IC110 = VCE(sat)  tfi(typ) = 2500V 8A 4.0V 86ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M VGES VGEM Continuous Transient IC25 IC110 ICM TC = 25°C TC = 110°C TC = 25°C, 1ms SSOA (RBSOA) VGE = 15V, TVJ = 150°C, RG = 15 Clamped Inductive Load PC TC = 25°C TJ TJM Tstg 2500 2500 V V ±20 ±30 V V 29 8 70 A A A ICM = 32 1500 A V 280 W -55 ... +175 175 -55 ... +175 °C °C °C 300 260 °C °C 1.13/10 Nm/lb.in. 6 g G Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Md Mounting Torque Weight    BVCES IC = 250A, VGE = 0V 2500 VGE(th) IC = 250A, VCE = VGE 3.0 ICES VCE = VCES, VGE = 0V V 5.0 10 A 3 mA TJ = 150C IGES VCE = 0V, VGE = 20V VCE(sat) IC = 8A, VGE = 15V, Note 1 100 TJ = 150C © 2017 IXYS CORPORATION, All Rights Reserved. V 3.35 4.75 4.00 nA V V C = Collector Tab = Collector High Voltage Package High Blocking Voltage High Peak Current Capability Low Saturation Voltage Advantages  Characteristic Values Min. Typ. Max. Tab Features  Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) E G = Gate E = Emitter  TL TSOLD C Low Gate Drive Requirement High Power Density Applications      Switch-Mode and Resonant-Mode Power Supplies Uninterruptible Power Supplies (UPS) Laser Generators Capacitor Discharge Circuits AC Switches DS100789A(4/17) IXYH8N250C Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs IC = 8A, VCE = 10V, Note 1 5.4 RGi Gate Input Resistance Cies Coes Cres Qg(on) Qge Qgc td(on) tri Eon td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff VCE = 0.5 • VCES, RG = 15 Note 2 Inductive load, TJ = 150°C IC = 8A, VGE = 15V VCE = 0.5 • VCES, RG = 15 Note 2 S 10  936 38 15 pF pF pF 45 6 21 nC nC nC 11 5 2.60 180 86 1.07 ns ns mJ ns ns mJ 12 12 3.70 200 128 1.20 ns ns mJ ns ns mJ 0.21 0.53 °C/W °C/W IC = 8A, VGE = 15V, VCE = 0.5 • VCES RthJC RthCS Notes: 9.0 VCE = 25V, VGE = 0V, f = 1MHz Inductive load, TJ = 25°C IC = 8A, VGE = 15V TO-247 (IXYH) Outline D A A2 B E Q R S 0P A 0K M D B M D2 D1 D 0P1 R1 1 2 3 4 IXYS OPTION L1 C L A1 c b b2 b4 e J MCAM E1 1 - Gate 2,4 - Collector 3 - Emitter 1. Pulse test, t  300μs, duty cycle, d  2%. 2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG. ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXYH8N250C o o Fig. 2. Extended Output Characteristics @ TJ = 25 C Fig. 1. Output Characteristics @ TJ = 25 C 16 VGE = 15V 12V 10V 9V 14 VGE = 15V 100 14V 8V 13V 10 8 I C - Amperes I C - Amperes 12 120 7V 6 80 12V 60 11V 10V 40 4 9V 2 20 8V 0 7V 6V 6V 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 0 5 10 15 16 2.2 VGE = 15V 13V 11V 10V 9V VGE = 15V 2.0 8V VCE(sat) - Normalized I C - Amperes 12 25 Fig. 4. Dependence of VCE(sat) on Junction Temperature o Fig. 3. Output Characteristics @ TJ = 150 C 14 20 VCE - Volts VCE - Volts 10 7V 8 6 6V 4 1.8 I C = 16A 1.6 1.4 I C = 8A 1.2 1.0 I C = 4A 0.8 2 5V 0.6 0 0 1 2 3 4 5 6 7 -50 8 -25 0 25 VCE - Volts Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage 8 50 75 100 125 150 175 TJ - Degrees Centigrade Fig. 6. Input Admittance 35 o TJ = 25 C 30 7 25 I C - Amperes VCE - Volts 6 I C = 16A 5 4 8A 20 15 10 o TJ = 150 C o 25 C 3 o - 40 C 5 4A 0 2 5 6 7 8 9 10 11 12 VGE - Volts © 2017 IXYS CORPORATION, All Rights Reserved. 13 14 15 4 4.5 5 5.5 6 6.5 7 VGE - Volts 7.5 8 8.5 9 9.5 IXYH8N250C Fig. 7. Transconductance Fig. 8. Gate Charge 16 18 o TJ = - 40 C 16 14 I C = 8A I G = 10mA 12 o 25 C 12 V GE - Volts g f s - Siemens VCE = 1250V 14 10 o 8 150 C 6 10 8 6 4 4 2 2 0 0 0 5 10 15 20 25 30 35 40 45 50 0 5 10 I C - Amperes 20 25 30 35 40 45 2250 2500 QG - NanoCoulombs Fig. 9. Capacitance Fig. 10. Reverse-Bias Safe Operating Area 10,000 36 f = 1 MHz 32 28 1,000 24 I C - Amperes Capacitance - PicoFarads 15 C ies Coes 100 20 16 12 C res 10 o 8 TJ = 150 C 4 RG = 15Ω dv / dt < 10V / ns 0 0 5 10 15 20 25 30 35 40 250 500 750 1000 1250 1500 1750 2000 VCE - Volts VCE - Volts Fig. 11. Maximum Transient Thermal Impedance Z (th)JC - K / W 1 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 Pulse Width - Second IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 0.1 1 IXYH8N250C Fig. 12. Inductive Switching Energy Loss vs. Gate Resistance 5 Eoff 3.6 12 Eon 10 2.8 6 1 Eoff - MilliJoules 2 Eon 7 6 VCE = 1250V 2.4 5 2.0 4 o TJ = 150 C 1.6 3 o TJ = 25 C 1.2 2 0.8 1 4 I C = 8A 0 10 20 30 40 50 60 70 80 90 0.4 2 100 0 8 9 10 11 RG - Ohms Eoff 4.0 Eon 8 VCE = 1250V 2.0 4 1.5 t f i - Nanoseconds 5 1.0 2 0.5 100 td(off) 140 400 I C = 16A 120 300 I C = 8A 100 200 80 100 60 1 150 125 10 20 30 40 50 td(off) RG = 15Ω, VGE = 15V 180 220 160 120 180 o TJ = 25 C 100 160 80 60 8 9 10 11 12 13 70 80 90 0 100 14 I C - Amperes © 2017 IXYS CORPORATION, All Rights Reserved. 15 16 Fig. 17. Inductive Turn-off Switching Times vs. Junction Temperature tfi td(off) 260 240 RG = 15Ω, VGE = 15V VCE = 1250V 140 220 I C = 16A 120 200 I C = 8A 100 140 80 120 60 180 I C = 16A 25 50 75 160 100 TJ - Degrees Centigrade 125 140 150 t d(off) - Nanoseconds 200 t d(off) - Nanoseconds VCE = 1250V o TJ = 150 C 140 240 t f i - Nanoseconds tfi 60 RG - Ohms Fig. 16. Inductive Turn-off Switching Times vs. Collector Current 160 600 500 o TJ = 150 ºC, VGE = 15V TJ - Degrees Centigrade 180 16 3 I C = 8A 75 15 t d(off) - Nanoseconds 2.5 E on - MilliJoules 6 50 14 VCE = 1250V I C = 16A Eoff - MilliJoules tfi 160 7 3.0 25 13 Fig. 15. Inductive Turn-off Switching Times vs. Gate Resistance 180 9 RG = 15ΩVGE = 15V 3.5 12 I C - Amperes Fig. 14. Inductive Switching Energy Loss vs. Junction Temperature 4.5 t f i - Nanoseconds E on - MilliJoules 8 I C = 16A E on - MilliJoules 3 8 RG = 15ΩVGE = 15V VCE = 1250V E off - MilliJoules Eoff 3.2 o TJ = 150 C , VGE = 15V 4 Fig. 13. Inductive Switching Energy Loss vs. Collector Current IXYH8N250C Fig. 18. Inductive Turn-on Switching Times vs. Gate Resistance tri 50 30 50 25 tri td(on) o TJ = 150 C, VGE = 15V 30 I C = 8A 20 20 10 10 0 30 40 50 60 70 80 90 0 100 Fig. 20. Inductive Turn-on Switching Times vs. Junction Temperature tri td(on) VCE = 1250V I C = 16A 14 15 12 I C = 8A 10 10 5 8 0 50 75 14 o TJ = 150 C 10 12 o TJ = 25 C 5 10 0 8 8 9 10 11 12 13 14 15 16 20 16 20 25 15 18 RG = 15Ω, VGE = 15V 25 16 100 125 t d(on) - Nanoseconds t r i - Nanoseconds 30 20 I C - Amperes RG - Ohms 35 18 t d(on) - Nanoseconds 30 t d(on) - Nanoseconds 40 20 td(on) VCE = 1250V 40 10 20 RG = 15Ω, VGE = 15V I C = 16A VCE = 1250V t r i - Nanoseconds 60 t r i - Nanoseconds 60 Fig. 19. Inductive Turn-on Switching Times vs. Collector Current 6 150 TJ - Degrees Centigrade IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: IXY_8N250C(3T-P628) 1-31-17