IXYH90N65A5

IXYH90N65A5 XPTTM 650V GenX5TM IGBT VCES = IC110 = VCE(sat)  tfi(typ) = Extreme Light Punch Through IGBT for up to 10kHz Switching 650V 90A 1.35V 220ns TO-247 (IXYH) Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M 650 650 V V VGES VGEM Continuous Transient ±20 ±30 V V IC25 ILRMS IC110 ICM TC = 25°C (Chip Capability) Terminal Current Limit TC = 110°C TC = 25°C, 1ms 220 160 90 600 A A A A SSOA (RBSOA) VGE = 15V, TVJ = 150°C, RG = 5 Clamped Inductive Load ICM = 180 VCE  VCES A PC TC = 25°C 650 W -55 ... +175 175 -55 ... +175 °C °C °C 300 °C TJ TJM Tstg TL Md Maximum Lead Temperature for Soldering 1.6 mm (0.062 in.) from Case for 10s G C C (Tab) E G = Gate E = Emitter C = Collector Tab = Collector Features     Optimized for Low Frequency High Current Switching High Surge Current Capability Square RBSOA International Standard Package Advantages Mounting Torque 1.13 / 10 Nm/lb.in 6 g Weight   High Power Density Low Gate Drive Requirement Applications  Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVCES IC = 250A, VGE = 0V 650 VGE(th) IC = 250A, VCE = VGE 3.7 ICES VCE = VCES, VGE = 0V VCE = 0V, VGE = 20V VCE(sat) IC = 60A, VGE = 15V, Note 1 ©2021 Littelfuse, Inc. TJ = 150C  V 5.8 V 5 500 A A 100 nA TJ = 150C IGES  1.22 1.30 1.35      Power Inverters UPS Motor Drives SMPS PFC Circuits Battery Chargers Welding Machines Lamp Ballasts V V DS101024B(7/21) IXYH90N65A5 Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 40 Cies Coes Cres Qg(on) Qge Qgc td(on) tri Eon td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff IC = 60A, VCE = 10V, Note 1 VCE = 25V, VGE = 0V, f = 1MHz IC = 90A, VGE = 15V, VCE = 0.5 • VCES Inductive load, TJ = 25°C IC = 50A, VGE = 15V VCE = 400V, RG = 5 Note 2 Inductive load, TJ = 150°C IC = 50A, VGE = 15V VCE = 400V, RG = 5 Note 2 68 S 4040 200 150 pF pF pF 260 33 128 nC nC nC 40 46 1.3 420 220 3.4 ns ns mJ ns ns mJ 24 44 2.8 380 360 5.0 ns ns mJ ns ns mJ 0.21 0.23 °C/W C/W RthJC RthCS Notes: 1. Pulse test, t  300µs, duty cycle, d  2%. 2. Switching times & energy losses may increase for higher V CE(clamp), TJ or RG. Littelfuse reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXYH90N65A5 Fig. 1. Output Characteristics @ TJ = 25oC Fig. 2. Extended Output Characteristics @ TJ = 25oC 180 700 VGE = 15V 13V 12V 11V 10V 160 140 600 9V VGE = 15V 500 IC - Amperes IC - Amperes 120 8V 100 80 7V 60 14V 13V 400 12V 11V 300 10V 9V 200 40 8V 20 100 6V 0 6V 0 0 0.5 1 1.5 2 2.5 0 2 4 6 8 10 12 14 16 18 VCE - Volts VCE - Volts Fig. 3. Output Characteristics @ TJ = 150oC Fig. 4. Dependence of VCE(sat) on Junction Temperature 180 20 22 1.8 VGE = 15V 13V 12V 11V 10V 140 V GE = 15V 1.6 I C = 180A 9V VCE(sat) - Normalized 160 120 IC - Amperes 7V 100 8V 80 7V 60 40 6V 1.4 1.2 I C = 90A 1.0 0.8 I C = 45A 20 5V 0.6 0 0 0.5 1 1.5 2 2.5 -50 3 -25 0 VCE - Volts 25 50 75 100 125 150 175 TJ - Degrees Centigrade Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage Fig. 6. Input Admittance 4.0 180 TJ = 25oC 160 VCE = 10V 3.5 TJ = - 40oC 25oC 140 150oC 120 I C - Amperes VCE - Volts 3.0 2.5 I C = 180A 100 80 60 2.0 90A 40 1.5 20 45A 0 1.0 6 7 8 9 10 11 VGE - Volts ©2021 Littelfuse, Inc. 12 13 14 15 4.0 4.5 5.0 5.5 6.0 6.5 7.0 VGE - Volts 7.5 8.0 8.5 9.0 IXYH90N65A5 Fig. 7. Transconductance Fig. 8. Gate Charge 100 16 90 VCE = 10V V CE = 325V I C = 90A I G = 10mA 14 TJ = - 40oC 80 12 25oC 60 VGE - Volts g f s - Siemens 70 50 150oC 40 10 8 6 30 4 20 2 10 0 0 0 20 40 60 80 100 0 120 40 80 I C - Amperes 120 160 200 240 280 QG - NanoCoulombs Fig. 9. Capacitance Fig. 10. Reverse-Bias Safe Operating Area 200 10,000 f = 1 MHz 180 140 I C - Amperes Capacitance - PicoFarads 160 Cies 1,000 120 100 80 60 C oes TJ = 150oC RG = 5Ω dv / dt < 10V / ns 40 20 Cres 100 0 5 10 15 0 20 25 30 35 40 200 300 400 500 600 700 VCE - Volts VCE - Volts Fig. 11. Maximum Transient Thermal Impedance 0.4 Z(th)JC - K / W 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 Pulse Width - Seconds Littelfuse reserves the right to change limits, test conditions, and dimensions. 0.1 1 10 IXYH90N65A5 Fig. 12. Inductive Switching Energy Loss vs. Collector Current 9 7 Eoff Eon RG = 5Ω , VGE = 15V VCE = 400V 12 10 Eoff Eon TJ = 150oC , VGE = 15V VCE = 400V 6 10 6 4 5 3 TJ = 150oC 4 2 3 1 8 8 6 I C = 80A 6 4 4 Eon - MilliJoules 5 Eon - MilliJoules 7 Eoff - MilliJoules 8 Eoff - MilliJoules Fig. 13. Inductive Switching Energy Loss vs. Gate Resistance 2 I C = 40A TJ = 25oC 2 0 20 30 40 50 60 70 80 90 2 0 4 100 6 8 10 12 18 20 Fig. 15. Inductive Turn-off Switching Times vs. Gate Resistance Fig. 14. Inductive Switching Energy Loss vs. Junction Temperature 12 700 5 600 4 500 1200 I C = 80A 8 6 3 4 2 t f i - Nanoseconds tfi Eoff Eon RG = 5Ω ,VGE = 15V VCE = 400V td(off) TJ = 150oC, VGE = 15V VCE = 400V 1000 800 I C = 40A 400 600 I C = 80A 300 400 I C = 40A 2 0 25 50 75 100 125 1 200 0 100 200 0 4 150 6 8 10 TJ - Degrees Centigrade td(off) RG = 5Ω , VGE = 15V VCE = 400V t f i - Nanoseconds 25oC 540 500 500 450 460 400 420 400 380 300 340 TJ = 150oC 200 300 TJ = 25oC 100 0 20 30 40 50 60 I C - Amperes ©2021 Littelfuse, Inc. 70 80 90 100 t d(off) - Nanoseconds TJ = 16 18 20 600 tfi td(off) 550 RG = 5Ω , VGE = 15V VCE = 400V 350 500 450 I C = 40A 300 400 250 350 I C = 80A 200 260 150 220 100 300 250 200 25 50 75 100 TJ - Degrees Centigrade 125 150 t d(off) - Nanoseconds 600 500 14 Fig. 17. Inductive Turn-off Switching Times vs. Junction Temperature t f i - Nanoseconds tfi 700 12 RG - Ohms Fig. 16. Inductive Turn-off Switching Times vs. Collector Current 800 t d(off) - Nanoseconds 6 Eon - MilliJoules Eoff - MilliJoules 16 RG - Ohms I C - Amperes 10 14 IXYH90N65A5 Fig. 18. Inductive Turn-on Switching Times vs. Gate Resistance 200 65 tri 80 35 40 0 8 10 12 14 16 18 50 60 40 TJ = 25oC 40 30 20 15 6 80 TJ = 150oC 25 I C = 40A 20 0 20 10 20 30 40 RG - Ohms 50 I C = 80A 50 40 40 30 I C = 40A 30 90 100 80 70 20 60 50 Triangular Wave 40 TJ = 150ºC TC = 75ºC VCE = 400V VGE = 15V RG = 5Ω Duty Cycle = 0.5 30 20 10 20 10 50 80 90 60 t d(on) - Nanoseconds t r i - Nanoseconds td(on) 60 25 70 Fig. 21. Maximum Peak Load Current vs. Frequency I C (A) tri 60 100 70 RG = 5Ω , VGE = 15V VCE = 400V 70 50 I C - Amperes Fig. 20. Inductive Turn-on Switching Times vs. Junction Temperature 80 60 t d(on) - Nanoseconds I C = 80A t d(on) - Nanoseconds 45 t d(on) RG = 5Ω , VGE = 15V VCE = 400V 100 55 120 4 70 td(on) TJ = 150oC, VGE = 15V VCE = 400V 160 120 t r i - Nanoseconds tri t r i - Nanoseconds Fig. 19. Inductive Turn-on Switching Times vs. Collector Current 75 100 125 150 T J - Degrees Centigrade Square Wave 0 10 40 100 200 fmax - KiloHertz Littelfuse reserves the right to change limits, test conditions, and dimensions. IXYS REF: IXY_90N65A5 (607-CY42) 9-30-20 IXYH90N65A5 TO-247 Outline 1 - Gate 2,4 - Collector 3 -Emitter Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. ©2021 Littelfuse, Inc.