IXYK140N120A4

IXYK140N120A4 1200V XPTTM IGBT GenX4TM VCES = IC110 = VCE(sat)  tfi(typ) = Ultra Low-Vsat IGBT for up to 5kHz Switching 1200V 140A 1.70V 320ns TO-264 (IXYK) Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M VGES VGEM Continuous Transient IC25 ILRMS IC110 ICM TC= 25°C (Chip Capability) Terminal Current Limit TC= 110°C TC = 25°C, 1ms SSOA VGE = 15V, TVJ = 125°C, RG = 2 (RBSOA) Clamped Inductive Load PC TC = 25°C TJ TJM Tstg TL Maximum Lead Temperature for Soldering 1.6 mm (0.062 in.) from Case for 10s Md Mounting Torque 1200 1200 V V ±20 ±30 V V 480 160 140 1200 A A A A ICM = 280 A 0.8 • V CES V 1500 W -55 ... +175 175 -55 ... +175 °C °C °C 300 °C 1.13/10 Nm/lb.in 10 g G C G = Gate C = Collector C (Tab) E = Emitter Tab = Collector Features    Optimized for Low Conduction Losses Positive Thermal Coefficient of Vce(sat) International Standard Package Advantages  Weight E  High Power Density Low Gate Drive Requirement Applications    Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVCES IC = 250A, VGE = 0V VGE(th) IC = 4mA, VCE = VGE ICES VCE = VCES, VGE = 0V 1200 VCE = 0V, VGE = 20V VCE(sat) IC 4.5 = IC110, VGE = 15V, Note 1 TJ = 150C ©2020 Littelfuse, Inc.   V 6.5 V    25 A 5 mA TJ = 125C IGES  Characteristic Values Min. Typ. Max. Power Inverters UPS Motor Drives SMPS PFC Circuits Battery Chargers Welding Machines Lamp Ballasts Inrush Current Protection Circuits 200 1.34 1.50 1.70 nA V V DS100973A(6/20) IXYK140N120A4 Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 60 IC = 60A, VCE = 10V, Note 1 Cies Coes Cres VCE = 25V, VGE = 0V, f = 1MHz Qg(on) Qge Qgc IC = IC110, VGE = 15V, VCE = 0.5 • VCES td(on) tri Eon td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff Inductive load, TJ = 25°C IC = 70A, VGE = 15V VCE = 0.5 • VCES, RG = 1.5 Note 2 Inductive load, TJ = 150°C IC = 70A, VGE = 15V VCE = 0.5 • VCES, RG = 1.5 Note 2 RthJC RthCS Notes: 100 S 8300 470 300 pF pF pF 420 nC 68 nC 210 nC 52 47 4.9 590 320 12.0 ns ns mJ ns ns mJ 44 42 7.4 710 530 20.0 ns ns mJ ns ns mJ 0.15 0.10 °C/W °C/W 1. Pulse test, t  300µs, duty cycle, d  2%. 2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG. Littelfuse reserves the right to change limits, test conditions and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXYK140N120A4 Fig. 2. Extended Output Characteristics @ TJ = 25oC Fig. 1. Output Characteristics @ TJ = 25oC 280 1000 VGE = 15V 12V 11V 10V 240 13V 800 200 12V 700 I C - Amperes I C - Amperes V GE = 15V 14V 900 9V 160 8V 120 600 11V 500 10V 400 300 80 7V 9V 200 40 0 7V 0 0 0.5 1 1.5 2 2.5 0 2 4 6 8 10 12 14 16 VCE - Volts VCE - Volts Fig. 3. Output Characteristics @ TJ = 150oC Fig. 4. Dependence of VCE(sat) on Junction Temperature 280 1.8 VGE = 15V 13V 12V 11V 10V 18 20 150 175 8 8.5 VGE = 15V 1.6 I C = 280A 9V 200 VCE(sat) - Normalized 240 I C - Amperes 8V 100 6V 160 8V 120 80 7V 1.4 1.2 I C = 140A 1.0 0.8 40 I C = 70A 6V 0 0 0.5 1 1.5 2 0.6 2.5 3 -50 -25 0 VCE - Volts 50 75 100 125 TJ - Degrees Centigrade Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage 3.5 25 Fig. 6. Input Admittance 240 o 200 2.5 160 2.0 I C = 280A 1.5 140A I C - Amperes VCE - Volts TJ = 25 C 3.0 120 80 o TJ = 150 C o 25 C 1.0 o - 40 C 40 70A 0 0.5 7 8 9 10 11 VGE - Volts ©2020 Littelfuse, Inc. 12 13 14 15 4 4.5 5 5.5 6 6.5 VGE - Volts 7 7.5 IXYK140N120A4 Fig. 7. Transconductance Fig. 8. Gate Charge 180 16 o TJ = - 40 C 160 140 I C = 140A I G = 10mA 12 120 o 25 C V GE - Volts g f s - Siemens VCE = 600V 14 100 o 80 150 C 60 10 8 6 4 40 2 20 0 0 0 20 40 60 80 100 120 140 160 180 0 200 50 100 150 I C - Amperes 250 300 350 400 Fig. 10. Reverse-Bias Safe Operating Area Fig. 9. Capacitance 300 10,000 C ies Capacitance - PicoFarads 200 QG - NanoCoulombs 250 I C - Amperes 200 1,000 Coes 150 100 o TJ = 125 C 100 1 0 RG = 2Ω dv / dt < 10V / ns 50 Cres f = 1 MHz 0 5 10 15 20 VCE - Volts 25 30 35 40 200 300 400 500 Fig. 11. Maximum Transient Thermal Impedance 600 700 800 900 1000 1100 1200 VCE - Volts Fig. 11. Maximum Transient Thermal Impedance aaa 0.2 Z(th)JC - K / W 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 Pulse Width - Seconds Littelfuse reserves the right to change limits, test conditions and dimensions. 0.1 1 10 IXYK140N120A4 Fig. 12. Inductive Switching Energy Loss vs. Collector Current Eoff 36 32 20 o TJ = 150 C VCE = 600V 14 20 12 o TJ = 25 C 16 10 20 8 16 6 8 6 4 4 8 2 150 4 60 70 90 100 110 120 130 140 12 400 600 700 Eon 32 40 28 36 16 24 12 E off - MilliJoules 28 8 16 3 4 5 6 7 28 8 9 24 20 I C = 140A 24 16 20 12 8 I C = 70A 12 4 2 4 8 10 25 50 75 100 0 150 125 RG - Ohms TJ - Degrees Centigrade Fig. 16. Inductive Turn-off Switching Times vs. Gate Resistance Fig. 17. Inductive Turn-off Switching Times vs. Collector Current tfi td(off) 1200 800 1100 700 o tfi 1000 800 500 700 I C = 140A 480 600 t f i - Nanoseconds 520 500 800 700 o TJ = 150 C 400 600 300 500 o TJ = 25 C 460 500 440 400 1 2 3 4 5 6 RG - Ohms ©2020 Littelfuse, Inc. 7 8 9 10 200 400 100 50 60 70 80 90 100 110 I C - Amperes 120 130 140 300 150 t d(off) - Nanoseconds 900 I C = 70A 1000 900 VCE = 600V 600 t d(off) - Nanoseconds 540 td(off) RG = 1.5Ω,VGE = 15V TJ = 150 C, VGE = 15V VCE = 600V 32 28 VCE = 600V 16 20 Eon 0 1000 Eon - MilliJoules 20 Eon - MilliJoules I C = 140A 32 Eoff 32 24 I C = 70A t f i - Nanoseconds 900 RG = 1.5Ω,VGE = 15V VCE = 600V 560 800 Fig. 15. Inductive Switching Energy Loss vs. Junction Temperature 36 580 500 Fig. 14. Inductive Switching Energy Loss vs. Gate Resistance o 600 2 VCE - Volts TJ = 150 C , VGE = 15V 1 4 o TJ = 25 C I C - Amperes Eoff 40 80 10 o TJ = 150 C 8 44 E off - MilliJoules 24 12 0 12 Eon - MilliJoules 24 14 I C = 70A 28 16 Eon 16 RG = 1.5Ω,VGE = 15V 18 28 50 Eoff 32 Eon - MilliJoules Eoff - MilliJoules Eon RG = 1.5Ω,VGE = 15V 36 22 Eoff - MilliJoules 40 Fig. 13. Inductive Switching Energy Loss vs. Collector-Emitter Voltage IXYK140N120A4 Fig. 18. Inductive Turn-off Switching Times vs. Junction Temperature 700 tfi 600 900 240 800 200 Fig. 19. Inductive Turn-on Switching Times vs. Gate Resistance td(off) RG = 1.5Ω, VGE = 15V tri I C = 140A 300 500 200 100 50 75 100 125 t r i - Nanoseconds t f i - Nanoseconds 600 160 70 120 60 I C = 70A 80 50 400 40 40 300 150 0 30 1 2 3 4 5 Fig. 20. Inductive Turn-on Switching Times vs. Collector Current 55 o 50 TJ = 150 C 45 o TJ = 25 C 40 20 80 90 100 110 120 td(on) 10 130 140 35 150 I C - Amperes 80 75 70 VCE = 600V 120 65 100 I C = 140A 60 80 55 60 50 40 40 70 t r i - Nanoseconds 100 60 9 t d(on) - Nanoseconds o 60 8 RG = 1.5Ω, VGE = 15V 140 60 TJ = 25 C 50 tri 160 65 VCE = 600V 80 7 Fig. 21. Inductive Turn-on Switching Times vs. Junction Temperature 180 70 t d(on) - Nanoseconds t r i - Nanoseconds td(on) RG = 1.5Ω, VGE = 15V 120 6 RG - Ohms TJ - Degrees Centigrade tri t d(on) - Nanoseconds 400 t d(off) - Nanoseconds 700 I C = 70A 140 80 VCE = 600V 500 160 I C = 140A o TJ = 150 C, VGE = 15V VCE = 600V 25 td(on) 90 45 I C = 70A 20 40 0 25 50 75 100 125 35 150 TJ - Degrees Centigrade Littelfuse reserves the right to change limits, test conditions and dimensions. IXYS REF: IXY_140N120A4 (Y19-RY90) 7-16-19 IXYK140N120A4 TO-264 Outline D B E A Q S 0R Q1 D 0R1 1 2 3 L1 C L A1 b1 J M C AM b b2 e c = Gate 2,4 = Collector 3 = Emitter 1 0P1 BACK SIDE A 4 ©2020 Littelfuse, Inc. 0P K M D BM IXYK140N120A4 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. Littelfuse reserves the right to change limits, test conditions and dimensions.