IXYN110N120C4

1200V XPTTM Gen 4 IGBT IXYN110N120C4 VCES = IC110 = VCE(sat)  tfi(typ) = High Speed IGBT for 20-50kHz Switching 1200V 110A 2.40V 37ns SOT-227, miniBLOC E153432 E Symbol Test Conditions VCES VCGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M VGES VGEM G Maximum Ratings 1200 1200 V V Continuous Transient ±20 ±30 V V IC25 ILRMS IC110 ICM TC= 25°C (Chip Capability) Terminal Current Limit TC= 110°C TC = 25°C, 1ms 220 200 110 760 A A A A SSOA (RBSOA) VGE = 15V, TVJ = 150°C, RG = 2 Clamped Inductive Load ICM = 220 0.8 • VCES A V PC TC = 25°C 830 W -55 ... +175 175 -55 ... +175 °C °C °C 2500 3000 V~ V~ 1.5/13 1.3/11.5 Nm/lb.in. Nm/lb.in. 30 g TJ TJM Tstg VISOL Md 50/60Hz IISOL 1mA t = 1min t = 1s Mounting Torque Terminal Connection Torque Weight E C G = Gate, C = Collector, E = Emitter  either emitter terminal can be used as Main or Kelvin Emitter Features       Advantages   Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVCES IC = 250A, VGE = 0V VGE(th) IC = 3mA, VCE = VGE ICES VCE = VCES, VGE = 0V Characteristic Values Min. Typ. Max. 1200 6.5 IGES VCE = 0V, VGE = 20V VCE(sat) IC = IC110, VGE = 15V, Note 1 ©2021 Littelfuse, Inc. 100 TJ = 150C V 50 A 1.5 mA TJ = 150C 1.90 2.27 2.40 High Power Density Low Gate Drive Requirement Applications V 4.5 International Standard Package miniBLOC, with Aluminium Nitride Isolation 2500V~ Isolation Voltage High Current Handling Capability Optimized for 20-50kHZ Switching Positive Thermal Coefficient of Vce(sat) nA         Power Inverters UPS Motor Drives SMPS PFC Circuits Battery Chargers Welding Machines Lamp Ballasts V V DS101060A(10/21) IXYN110N120C4 Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) gfs IC = 60A, VCE = 10V, Note 1 Cies Coes Cres VCE = 25V, VGE = 0V, f = 1MHz Qg(on) Qge Qgc IC = IC110, VGE = 15V, VCE = 0.5 • VCES td(on) tri Eon td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff Characteristic Values Min. Typ. Max. 40 Inductive load, TJ = 25°C IC = 50A, VGE = 15V VCE = 0.5 • VCES, RG = 2 Note 2 Inductive load, TJ = 150°C IC = 50A, VGE = 15V VCE = 0.5 • VCES, RG = 2 Note 2 RthJC RthCS Notes: 68 S 5420 335 220 pF pF pF 330 nC 55 nC 138 nC 40 48 3.6 320 37 1.9 ns ns mJ ns ns mJ 36 37 5.3 326 90 3.2 ns ns mJ ns ns mJ 0.05 0.18 °C/W °C/W 1. Pulse test, t  300µs, duty cycle, d  2%. 2. Switching times & energy losses may increase for higher V CE(clamp), TJ or RG. Littelfuse reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXYN110N120C4 Fig. 2. Extended Output Characteristics @ TJ = 25oC Fig. 1. Output Characteristics @ TJ = 25oC VGE = 15V 13V 12V 11V 200 700 10V VGE = 15V 600 14V 500 9V I C - Amperes I C - Amperes 160 120 8V 80 13V 400 12V 11V 300 10V 200 40 7V 6V 0 0 0.5 1 1.5 2 2.5 9V 100 8V 7V 0 3 3.5 0 5 10 15 20 VCE - Volts VCE - Volts Fig. 3. Output Characteristics @ TJ = 150oC Fig. 4. Dependence of VCE(sat) on Junction Temperature 2.0 VGE = 15V 13V 12V 11V 200 VCE(sat) - Normalized 160 I C - Amperes V GE = 15V 1.8 I C = 220A 10V 9V 120 8V 80 1.6 1.4 I C = 110A 1.2 1.0 7V 40 0.8 6V 0 0 0.5 1 1.5 2 2.5 3 3.5 4 I C = 55A 0.6 4.5 -50 -25 0 25 VCE - Volts 50 75 100 125 150 175 TJ - Degrees Centigrade Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage Fig. 6. Input Admittance 5.0 300 TJ = 25oC 4.5 TJ = - 40oC 25oC 250 4.0 I C - Amperes VCE - Volts 150oC 200 3.5 I C = 220A 3.0 2.5 150 100 110A 2.0 50 1.5 55A 0 1.0 7 8 9 10 11 VGE - Volts ©2021 Littelfuse, Inc. 12 13 14 15 4 5 6 7 8 VGE - Volts 9 10 11 IXYN110N120C4 Fig. 7. Transconductance Fig. 8. Gate Charge 16 TJ = - 40oC 100 12 80 25oC VGE - Volts g f s - Siemens VCE = 600V I C = 110A I G = 10mA 14 60 150oC 40 10 8 6 4 20 2 0 0 0 50 100 150 200 250 0 50 100 I C - Amperes Fig. 9. Capacitance 200 250 300 350 Fig. 10. Reverse-Bias Safe Operating Area 10,000 240 200 C ies 160 I C - Amperes Capacitance - PicoFarads 150 QG - NanoCoulombs 1,000 C oes 120 80 TJ = 150oC RG = 2Ω dv / dt < 10V / ns 40 f = 1 MHz Cres 0 100 0 5 10 15 20 25 30 35 200 40 300 400 500 600 700 800 900 1000 1100 1200 VCE - Volts VCE - Volts Fig. 11. Maximum Transient Thermal Impedance 0.3 Z (th)JC - K / W 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 Pulse Width - Seconds Littelfuse reserves the right to change limits, test conditions, and dimensions. 0.1 1 10 IXYN110N120C4 Fig. 13. Inductive Switching Energy Loss vs. Collector-Emitter Voltage Fig. 12. Inductive Switching Energy Loss vs. Collector Current 9 Eoff Eon RG = 2Ω , VGE = 15V VCE = 600V 7 Eoff Eon RG = 2Ω , VGE = 15V I C = 50A 5 8 5 6 4 5 4 TJ = 150oC 2 10 4 8 TJ = 150oC 3 6 2 4 TJ = 25oC 3 1 1 TJ = 1 20 30 40 50 60 70 0 80 10 20 800 900 8 3 Eoff - MilliJoules 5 1 4 5 6 7 8 9 12 I C = 100A 4 8 4 I C = 50A 0 3 6 2 4 I C = 50A 16 0 10 0 25 50 75 100 125 150 RG - Ohms TJ - Degrees Centigrade Fig. 16. Inductive Turn-off Switching Times vs. Gate Resistance Fig. 17. Inductive Turn-off Switching Times vs. Collector Current 160 tfi td(off) TJ = 150oC, VGE = 15V VCE = 600V 600 160 550 140 80 400 60 350 I C = 100A 40 20 3 4 5 6 RG - Ohms ©2021 Littelfuse, Inc. 7 8 9 10 t f i - Nanoseconds 450 I C = 50A tfi td(off) 400 RG = 2Ω , VGE = 15V VCE = 600V 100 380 360 TJ = 150oC 80 340 60 320 TJ = 25oC 40 300 20 250 0 300 280 20 30 40 50 60 I C - Amperes 70 80 90 260 100 t d(off) - Nanoseconds 100 420 120 500 t d(off) - Nanoseconds 120 Eon - MilliJoules 12 Eon - MilliJoules 7 20 Eoff Eon RG = 2Ω ,VGE = 15V VCE = 600V 8 16 I C = 100A 2 700 Fig. 15. Inductive Switching Energy Loss vs. Junction Temperature 9 140 600 Fig. 14. Inductive Switching Energy Loss vs. Gate Resistance Eoff Eon TJ = 150oC , VGE = 15V VCE = 600V 2 500 VCE - Volts 24 11 0 400 I C - Amperes 13 Eoff - MilliJoules 2 2 25oC 0 t f i - Nanoseconds Eon - MilliJoules 7 Eon - MilliJoules 6 3 12 9 Eoff - MilliJoules 8 Eoff - MilliJoules 6 10 IXYN110N120C4 Fig. 18. Inductive Turn-off Switching Times vs. Junction Temperature Fig. 19. Inductive Turn-on Switching Times vs. Gate Resistance 120 440 td(off) 320 40 280 I C = 100A 20 240 0 100 125 50 80 45 60 40 I C = 50A 35 30 0 25 2 3 4 5 6 7 8 9 TJ - Degrees Centigrade RG - Ohms Fig. 20. Inductive Turn-on Switching Times vs. Collector Current Fig. 21. Inductive Turn-on Switching Times vs. Junction Temperature td(on) 60 tri 120 RG = 2Ω , VGE = 15V VCE = 600V TJ = 25oC 30 20 55 100 50 I C = 100A 80 45 60 40 40 35 I C = 50A 20 20 0 10 20 30 40 50 60 70 80 90 100 I C - Amperes t d(on) - Nanoseconds 40 t d(on) - Nanoseconds 40 TJ = 150oC td(on) RG = 2Ω , VGE = 15V VCE = 600V 50 60 10 140 60 tri t r i - Nanoseconds 100 150 100 80 55 20 200 75 60 I C = 100A 40 t r i - Nanoseconds t f i - Nanoseconds I C = 50A 60 td(on) t d(on) - Nanoseconds t d(off) - Nanoseconds 360 50 tri TJ = 150oC, VGE = 15V VCE = 600V 120 80 25 65 140 400 t r i - Nanoseconds tfi RG = 2Ω , VGE = 15V VCE = 600V 100 160 30 0 25 25 50 75 100 125 150 TJ - Degrees Centigrade Littelfuse reserves the right to change limits, test conditions, and dimensions. IXYS REF: IXY_110N120C4 (N8-RY90) 9-06-21-A IXYN110N120C4 SOT-227 miniBLOC Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. ©2021 Littelfuse, Inc.