IXYN150N60B3

Preliminary Technical Information 600V XPTTM IGBT GenX3TM IXYN150N60B3 Extreme Light Punch through IGBT for 10-30kHz Switching VCES = IC110 = VCE(sat)  tfi(typ) = E SOT-227B, miniBLOC E153432 Symbol Test Conditions VCES VCGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M 600 600 V V VGES VGEM Continuous Transient ±20 ±30 V V IC25 ILRMS IC110 ICM TC = 25°C (Chip Capability) Terminal Current Limit TC = 110°C TC = 25°C, 1ms 250 200 140 750 A A A A IA EAS TC = 25°C TC = 25°C 75 1 A J SSOA (RBSOA) VGE = 15V, TVJ = 150°C, RG = 2 Clamped Inductive Load ICM = 300 VCE  VCES A tsc (SCSOA) VGE = 15V, VCE = 360V, TJ = 150°C RG = 82, Non Repetitive 8 μs PC TC = 25°C 830 W Maximum Ratings -55 ... +175 175 -55 ... +175 °C °C °C 2500 3000 V~ V~ 1.5/13 1.3/11.5 Nm/lb.in Nm/lb.in 30 g TJ TJM Tstg VISOL Md 50/60Hz IISOL  1mA t = 1min t = 1s Mounting Torque Terminal Connection Torque Weight E G E C G = Gate, C = Collector, E = Emitter  either emitter terminal can be used as Main or Kelvin Emitter Features           Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVCES IC = 250μA, VGE = 0V 600 VGE(th) IC = 250μA, VCE = VGE 3.0 ICES VCE = VCES, VGE = 0V V 5.5 10 μA 1 mA TJ = 150°C VCE = 0V, VGE = ±20V VCE(sat) IC = 150A, VGE = 15V, Note 1 TJ = 150°C © 2016 IXYS CORPORATION, All Rights Reserved V 1.77 2.10 nA 2.20 V V High Power Density Low Gate Drive Requirement Applications      ±200 Optimized for Low Conduction and Switching Losses miniBLOC, with Aluminium Nitride Isolation International Standard Package Isolation Voltage 2500V~ Optimized for 10-30kHz Switching Square RBSOA Avalanche Rated Short Circuit Capability High Current Handling Capability Advantages  IGES 600V 140A 2.20V 80ns    Power Inverters UPS Motor Drives SMPS PFC Circuits Battery Chargers Welding Machines Lamp Ballasts DS100548B(11/16) IXYN150N60B3 Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 40 IC = 60A, VCE = 10V, Note 1 Cies Coes Cres VCE = 25V, VGE = 0V, f = 1MHz Qg(on) Qge Qgc IC = 150A, VGE = 15V, VCE = 0.5 • VCES td(on) tri Eon td(off) tfi Eoff Inductive load, TJ = 25°C IC = 75A, VGE = 15V VCE = 400V, RG = 2 Note 2 td(on) tri Eon td(off) tfi Eoff Inductive load, TJ = 150°C C = 75A, VGE = 15V VCE = 400V, RG = 2 Note 2 RthJC RthCS Notes: 70 S 6950 400 150 pF pF pF 260 39 115 nC nC nC 27 88 4.20 167 80 2.60 ns ns mJ ns ns mJ 26 84 5.30 220 110 3.76 ns ns mJ ns ns mJ 0.05 0.18 °C/W °C/W 1. Pulse test, t  300μs, duty cycle, d  2%. 2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG. SOT-227B (IXYN) OUTLINE J M4-7 NUT (4 PLACES) A B D MN C S L E F G H O U PRELIMANARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXYN150N60B3 Fig. 1. Output Characteristics @ TJ = 25ºC Fig. 2. Extended Output Characteristics @ TJ = 25ºC 300 14V 13V 700 10V 600 200 12V I C - Amperes I C - Amperes 250 VGE = 15V 800 VGE = 15V 13V 12V 11V 9V 150 100 8V 500 11V 400 300 10V 200 50 7V 6V 0 0 0.5 1 1.5 2 2.5 3 9V 100 8V 7V 0 3.5 0 2 4 6 8 300 2.0 VGE = 15V 13V 12V 11V 14 16 18 20 150 175 VGE = 15V 1.8 10V I C = 300A VCE(sat) - Normalized I C - Amperes 12 Fig. 4. Dependence of VCE(sat) on Junction Temperature Fig. 3. Output Characteristics @ TJ = 150ºC 250 10 VCE - Volts VCE - Volts 200 9V 150 8V 100 7V 50 1.6 1.4 1.2 I C = 150A 1.0 0.8 I C = 75A 6V 0.6 0 0 0.5 1 1.5 2 2.5 3 3.5 4 -50 4.5 -25 0 25 VCE - Volts Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage 6.0 50 75 100 125 TJ - Degrees Centigrade Fig. 6. Input Admittance 400 TJ = 25ºC 5.5 350 5.0 300 I C - Amperes VCE - Volts 4.5 4.0 3.5 I C = 300A 3.0 250 200 TJ = 150ºC 25ºC 150 2.5 - 40ºC 100 150A 2.0 50 1.5 75A 1.0 7 8 9 10 11 12 VGE - Volts © 2016 IXYS CORPORATION, All Rights Reserved 0 13 14 15 4 5 6 7 8 VGE - Volts 9 10 11 IXYN150N60B3 Fig. 8. Gate Charge Fig. 7. Transconductance 16 180 TJ = - 40ºC 160 140 I C = 150A I G = 10mA 12 25ºC 120 V GE - Volts g f s - Siemens VCE = 300V 14 150ºC 100 80 60 10 8 6 4 40 2 20 0 0 0 50 100 150 200 250 300 350 0 400 20 40 60 I C - Amperes 100 120 140 160 180 200 220 240 260 QG - NanoCoulombs Fig. 10. Reverse-Bias Safe Operating Area Fig. 9. Capacitance 350 10,000 300 Cies 250 1,000 Coes I C - Amperes Capacitance - PicoFarads 80 200 150 100 50 Cres f = 1 MHz TJ = 150ºC RG = 2Ω dv / dt < 10V / ns 0 100 0 5 10 15 20 25 100 200 35 40 Fig.3011. Maximum Transient Thermal Impedance 300 400 500 600 VCE - Volts VCE - Volts 1 Fig. 11. Maximum Transient Thermal Impedance aaaaa 0.3 Z (th)JC - K / W 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 0.1 1 10 IXYN150N60B3 Fig. 12. Inductive Switching Energy Loss vs. Gate Resistance Eoff 6 Eon Eoff 11 TJ = 150ºC , VGE = 15V VCE = 400V Eon 3 5 4 6 3 4 TJ = 25ºC E on - MilliJoules 7 E on - MilliJoules 4 8 TJ = 150ºC VCE = 400V 9 10 RG = 2Ω , VGE = 15V 5 I C = 100A 5 Eoff - MilliJoules 6 13 E off - MilliJoules 7 Fig. 13. Inductive Switching Energy Loss vs. Collector Current I C = 50A 2 2 3 1 1 1 1 3 5 7 9 11 13 2 50 15 55 60 65 70 RG - Ohms VCE = 400V 280 12 240 10 200 4 8 3 6 I C = 50A 2 1 0 50 75 100 125 Eon - MilliJoules I C = 100A 25 tfi tfi td(off) 600 500 I C = 100A 120 4 80 2 40 0 150 0 400 200 100 3 5 7 240 240 200 13 15 Fig. 17. Inductive Turn-off Switching Times vs. Junction Temperature 0 85 I C - Amperes © 2016 IXYS CORPORATION, All Rights Reserved 260 td(off) 240 RG = 2Ω , VGE = 15V 90 95 160 220 120 200 I C = 50A, 100A 80 180 160 40 160 140 100 0 180 TJ = 25ºC 40 t f i - Nanoseconds t f i - Nanoseconds 80 80 11 25 50 75 100 TJ - Degrees Centigrade 125 140 150 t d(off) - Nanoseconds 200 t d(off) - Nanoseconds TJ = 150ºC 75 9 VCE = 400V 120 70 300 I C = 50A 1 260 220 65 700 160 tfi 160 60 800 VCE = 400V VCE = 400V 55 0 100 TJ = 150ºC, VGE = 15V td(off) RG = 2Ω , VGE = 15V 50 95 RG - Ohms Fig. 16. Inductive Turn-off Switching Times vs. Collector Current 200 90 Fig. 15. Inductive Turn-off Switching Times vs. Gate Resistance TJ - Degrees Centigrade 240 85 t d(off) - Nanoseconds 5 E off - MilliJoules Eon RG = 2Ω , VGE = 15V 14 t f i - Nanoseconds Eoff 6 80 I C - Amperes Fig. 14. Inductive Switching Energy Loss vs. Junction Temperature 7 75 IXYN150N60B3 Fig. 18. Inductive Turn-on Switching Times vs. Gate Resistance tri 200 td(on) 160 120 60 80 40 I C = 50A 40 20 0 0 1 3 5 7 9 11 13 tri 80 26 TJ = 150ºC 60 24 40 22 50 55 60 65 70 75 80 85 90 95 20 100 36 32 I C = 100A 140 30 120 28 100 26 80 24 60 22 I C = 50A 40 20 20 18 0 50 28 TJ = 25ºC 34 VCE = 400V 25 100 30 75 100 125 t d(on) - Nanoseconds t r i - Nanoseconds td(on) RG = 2Ω , VGE = 15V 160 VCE = 400V 120 I C - Amperes Fig. 20. Inductive Turn-on Switching Times vs. Junction Temperature 180 32 RG = 2Ω , VGE = 15V 20 15 RG - Ohms 200 td(on) 34 t d(on) - Nanoseconds 80 t d(on) - Nanoseconds I C = 100A 160 tri 140 100 TJ = 150ºC, VGE = 15V VCE = 400V t r i - Nanoseconds 120 t r i - Nanoseconds 240 Fig. 19. Inductive Turn-on Switching Times vs. Collector Current 16 150 TJ - Degrees Centigrade IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: IXY_150N60B3(8D-Y42) 11-03-16 Disclaimer Notice - Information furnished is believed to be accurate and reliable. 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