IXYP60N65A5

IXYP60N65A5 XPTTM 650V GenX5TM IGBT VCES = IC110 = VCE(sat)  tfi(typ) = 650V 60A 1.35V 110ns Extreme Light Punch Through IGBT for up to 10kHz Switching TO-220 (IXYP) G C Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M 650 650 V V VGES VGEM Continuous Transient ±20 ±30 V V IC25 IC110 ICM TC = 25°C TC = 110°C TC = 25°C, 1ms 134 60 260 A A A SSOA (RBSOA) VGE = 15V, TVJ = 150°C, RG = 5 Clamped Inductive Load ICM = 108 @V CE  VCES A PC TC = 25°C 395 W -55 ... +175 175 -55 ... +175 °C °C °C 300 °C 1.13 / 10 Nm/lb.in 3 g TJ TJM Tstg TL Maximum Lead Temperature for Soldering 1.6 mm (0.062 in.) from Case for 10s Md Mounting Torque Weight E G = Gate E = Emitter C (Tab) C = Collector Tab = Collector Features     Optimized for Low Frequency High Current Switching High Surge Current Capability Square RBSOA International Standard Packages Advantages   High Power Density Low Gate Drive Requirement Applications Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVCES IC = 250A, VGE = 0V 650 VGE(th) IC = 250A, VCE = VGE 3.7 ICES VCE = VCES, VGE = 0V  V 5.8 V 10 250 A µA 100 nA TJ = 150C IGES VCE = 0V, VGE = 20V VCE(sat) IC = 36A, VGE = 15V, Note 1 TJ = 150C © 2021 Littelfuse, Inc.  1.23 1.35 1.35       Power Inverters UPS Motor Drives SMPS PFC Circuits Battery Chargers Welding Machines Lamp Ballasts V V DS100991B(7/21) IXYP60N65A5 Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 20 IC = 36A, VCE = 10V, Note 1 Cies Coes Cres VCE = 25V, VGE = 0V, f = 1MHz Qg(on) Qge Qgc IC = 36A, VGE = 15V, VCE = 0.5 • VCES td(on) tri Eon td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff Inductive load, TJ = 25°C IC = 36A, VGE = 15V VCE = 400V, RG = 5 Note 2 Inductive load, TJ = 150°C IC = 36A, VGE = 15V VCE = 400V, RG = 5 Note 2 35 S 1970 106 80 pF pF pF 128 13 66 nC nC nC 28 32 0.60 230 110 1.45 ns ns mJ ns ns mJ 19 32 1.10 235 240 2.50 ns ns mJ ns ns mJ 0.38 C/W RthJC RthCS Notes: 0.50 C/W 1. Pulse test, t  300µs, duty cycle, d  2%. 2. Switching times & energy losses may increase for higher V CE(clamp), TJ or RG. Littelfuse reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXYP60N65A5 Fig. 1. Output Characteristics @ TJ = 25oC V GE = 15V 13V 12V 11V 70 60 Fig. 2. Extended Output Characteristics @ TJ = 25oC 10V 300 9V V GE = 15V 250 14V 13V I C - Amperes I C - Amperes 50 40 8V 30 200 12V 11V 150 10V 100 20 9V 7V 8V 50 10 7V 6V 0 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 6V 0 2 4 6 8 10 12 14 16 VCE - Volts VCE - Volts Fig. 3. Output Characteristics @ TJ = 150oC Fig. 4. Dependence of VCE(sat) on Junction Temperature 18 20 150 175 1.6 VGE = 15V 13V 12V 11V 70 60 VGE = 15V 10V V CE(sat) - Normalized 9V 50 I C - Amperes I C = 72A 1.4 40 8V 30 7V 20 1.2 I C = 36A 1.0 0.8 10 I C = 18A 6V 5V 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 0.6 2.4 -50 -25 0 VCE - Volts 50 75 100 125 TJ - Degrees Centigrade Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage Fig. 6. Input Admittance 2.6 80 TJ = 25oC 2.4 70 2.2 60 I C - Amperes 2.0 VCE - Volts 25 I C = 72A 1.8 1.6 36A 50 40 30 1.4 20 1.2 10 TJ = 150oC 25oC - 40oC 18A 0 1.0 6 7 8 9 10 11 VGE - Volts © 2021 Littelfuse, Inc. 12 13 14 15 4 4.5 5 5.5 6 6.5 VGE - Volts 7 7.5 8 8.5 9 IXYP60N65A5 Fig. 7. Transconductance Fig. 8. Gate Charge 45 16 TJ = - 40oC 40 35 12 25oC 30 25 VGE - Volts g f s - Siemens VCE = 325V I C = 36A I G = 10mA 14 150oC 20 15 10 8 6 4 10 2 5 0 0 0 10 20 30 40 50 60 70 0 20 40 I C - Amperes 60 80 100 120 QG - NanoCoulombs Fig. 9. Capacitance Fig. 10. Reverse-Bias Safe Operating Area 120 10,000 f = 1 MHz Cies 1,000 80 IC - Amperes Capacitance - PicoFarads 100 C oes 60 40 100 C res TJ = 150oC RG = 5Ω dv / dt < 10V / ns 20 10 0 0 5 10 15 20 25 30 35 40 200 300 400 500 600 700 VCE - Volts VCE - Volts Fig. 11. Maximum Transient Thermal Impedance 1 Z(th)JC - K / W 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 Pulse Width - Seconds Littelfuse reserves the right to change limits, test conditions, and dimensions. 0.1 1 10 IXYP60N65A5 Fig. 12. Inductive Switching Energy Loss vs. Collector Current Fig. 13. Inductive Switching Energy Loss vs. Gate Resistance 7 3.5 Eoff Eon RG = 5Ω , VGE = 15V VCE = 400V 5 Eoff Eon TJ = 150oC , VGE = 15V VCE = 400V 9 3.0 8 4 2.0 TJ = 150oC 3 1.5 2 0.5 0 0.0 6 3 I C = 72A 5 4 2 3 1.0 TJ = 25oC 1 4 7 Eoff - MilliJoules 2.5 Eon - MilliJoules 5 Eon - MilliJoules Eoff - MilliJoules 6 10 2 1 I C = 36A 1 15 20 25 30 35 40 45 50 55 60 65 70 0 75 0 4 6 8 10 12 I C - Amperes 20 3.5 270 3.0 260 2.5 4 2.0 3 1.5 2 500 tfi td(off) 450 TJ = 150oC, VGE = 15V VCE = 400V 400 I C = 36A 250 350 240 300 230 250 I C = 72A 1.0 220 200 0.5 210 150 0.0 200 t d(off) - Nanoseconds Eoff - MilliJoules 280 Eon - MilliJoules I C = 72A 4.0 t f i - Nanoseconds Eoff Eon RG = 5Ω ,VGE = 15V VCE = 400V 5 18 Fig. 15. Inductive Turn-off Switching Times vs. Gate Resistance 8 6 16 RG - Ohms Fig. 14. Inductive Switching Energy Loss vs. Junction Temperature 7 14 I C = 36A 1 0 25 50 75 100 125 100 4 150 6 8 10 360 tfi 260 160 240 TJ = 25oC 220 80 200 40 180 260 220 240 I C = 36A 180 220 I C = 72A 140 200 100 0 160 15 20 25 30 35 40 45 50 I C - Amperes © 2021 Littelfuse, Inc. 55 60 65 70 75 180 60 160 25 50 75 100 TJ - Degrees Centigrade 125 150 t d(off) - Nanoseconds 280 t f i - Nanoseconds 300 TJ = 150oC td(off) RG = 5Ω , VGE = 15V VCE = 400V 260 240 120 20 280 320 t d(off) - Nanoseconds t f i - Nanoseconds td(off) RG = 5Ω , VGE = 15V VCE = 400V 200 18 300 340 280 16 Fig. 17. Inductive Turn-off Switching Times vs. Junction Temperature Fig. 16. Inductive Turn-off Switching Times vs. Collector Current tfi 14 RG - Ohms TJ - Degrees Centigrade 320 12 IXYP60N65A5 Fig. 19. Inductive Turn-on Switching Times vs. Collector Current Fig. 18. Inductive Turn-on Switching Times vs. Gate Resistance tri 120 t d(on) TJ = 150oC, VGE = 15V VCE = 400V 70 50 60 I C = 72A 80 40 60 30 I C = 36A 40 0 4 6 8 10 12 14 16 18 td(on) 36 RG = 5Ω , VGE = 15V VCE = 400V 32 TJ = 25oC 50 28 TJ = 150oC 40 24 30 20 10 20 16 0 10 20 20 40 tri 12 15 20 t d(on) - Nanoseconds 100 60 t d(on) - Nanoseconds t r i - Nanoseconds 80 70 t r i - Nanoseconds 140 20 25 30 35 40 45 50 55 60 65 70 75 I C - Amperes RG - Ohms Fig. 20. Inductive Turn-on Switching Times vs. Junction Temperature 80 60 tri 50 60 40 I C = 72A 50 30 40 20 I C = 36A 30 t d(on) - Nanoseconds t r i - Nanoseconds td(on) RG = 5Ω , VGE = 15V VCE = 400V 70 10 20 0 25 50 75 100 125 150 TJ - Degrees Centigrade Littelfuse reserves the right to change limits, test conditions, and dimensions. IXYS REF: IXY_60N65A5 (606-RY42) 11-20-19 IXYP60N65A5 TO-220 Outline E A 0P A1 H1 Q (D2) D D1 4 1 2 3 (E1) A2 L1 c e e1 3X b 3X b2 1 - Gate 2,4 - Collector 3 - Emitter Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. © 2021 Littelfuse, Inc.