IXYX50N170C

Advance Technical Information IXYX50N170C High Voltage XPTTM IGBT VCES = IC110 = VCE(sat)  tfi(typ) = 1700V 50A 3.7V 95ns PLUS247 (IXYX) Symbol Test Conditions VCES VCGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M Maximum Ratings VGES VGEM 1700 1700 V V Continuous Transient ±20 ±30 V V G IC25 IC110 ICM TC = 25°C TC = 110°C TC = 25°C, 1ms 178 50 460 A A A G = Gate C = Collector SSOA (RBSOA) VGE = 15V, TVJ = 150°C, RG = 1 Clamped Inductive Load ICM = 200 VCE  1360 A V PC TC = 25°C 1500 W -55 ... +175 175 -55 ... +175 °C °C °C TJ TJM Tstg TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s FC Mounting Force 300 260 °C °C 20..120 /4.5..27 N/lb 6 g Weight G C E Tab E = Emitter Tab = Collector Features     High Voltage Package High Blocking Voltage High Peak Current Capability Low Saturation Voltage Advantages   Low Gate Drive Requirement High Power Density Applications Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVCES IC = 250A, VGE = 0V 1700 VGE(th) IC = 250A, VCE = VGE ICES VCE = VCES, VGE = 0V V 3.0 5.0 VCE = 0V, VGE = 20V VCE(sat) IC = 50A, VGE = 15V, Note 1 TJ = 150C © 2017 IXYS CORPORATION, All Rights Reserved V 25 A 3.5 mA TJ = 150C IGES  100 2.8 3.9 3.7     Switch-Mode and Resonant-Mode Power Supplies Uninterruptible Power Supplies (UPS) Laser Generators Capacitor Discharge Circuits AC Switches nA V V DS100800(02/17) IXYX50N170C Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs IC = 50A, VCE = 10V, Note 1 30 RGi Gate Input Resistance Cies Coes Cres Qg(on) Qge Qgc td(on) tri Eon td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff VCE = 25V, VGE = 0V, f = 1MHz S 2.0  5500 276 105 pF pF pF 260 28 110 nC nC nC 20 44 8.7 180 95 5.6 ns ns mJ ns ns mJ 22 40 11.9 236 160 8.2 ns ns mJ ns ns mJ 0.15 0.10 °C/W °C/W Inductive load, TJ = 25°C IC = 50A, VGE = 15V VCE = 0.5 • VCES, RG = 1 Note 2 VCE = 0.5 • VCES, RG = 1 Note 2 RthJC RthCS Notes: 50 IC = 50A, VGE = 15V, VCE = 0.5 • VCES Inductive load, TJ = 150°C IC = 50A, VGE = 15V PLUS247TM Outline Terminals: 1 - Gate 2,4 - Collector 3 - Emitter 1. Pulse test, t  300μs, duty cycle, d  2%. 2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG. ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXYX50N170C o o Fig. 2. Extended Output Characteristics @ TJ = 25 C Fig. 1. Output Characteristics @ TJ = 25 C 100 600 VGE = 15V 12V 10V 9V 90 80 VGE = 15V 8V 70 13V 400 I C - Amperes I C - Amperes 14V 500 60 50 7V 40 30 12V 300 11V 10V 200 9V 20 100 8V 7V 6V 10 6V 0 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 0 2 4 6 8 2.2 100 VGE = 15V 12V 10V 9V 1.8 8V 70 I C - Amperes 14 16 18 20 22 VGE = 15V 2.0 V CE(sat) - Normalized 80 12 Fig. 4. Dependence of VCE(sat) on Junction Temperature o Fig. 3. Output Characteristics @ TJ = 150 C 90 10 VCE - Volts VCE - Volts 60 7V 50 40 30 6V 1.6 1.4 I C = 50A 1.2 1.0 I C = 25A 0.8 20 10 I C = 100A 0.6 5V 0.4 0 0 1 2 3 4 5 6 -50 7 -25 0 VCE - Volts 50 75 100 125 150 175 TJ - Degrees Centigrade Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage 7 25 Fig. 6. Input Admittance 250 225 o TJ = 150 C 200 6 I C - Amperes VCE - Volts 175 5 I C = 100A 4 150 125 100 75 o 50A 3 TJ = 150 C 50 25A o 25 C 25 o - 40 C 0 2 5 6 7 8 9 10 11 12 VGE - Volts © 2017 IXYS CORPORATION, All Rights Reserved 13 14 15 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 VGE - Volts 8.0 8.5 9.0 9.5 10.0 IXYX50N170C Fig. 7. Transconductance Fig. 8. Gate Charge 90 16 o TJ = - 40 C 80 70 I C = 50A I G = 10mA 12 o 25 C 60 50 V GE - Volts g f s - Siemens VCE = 850V 14 o 150 C 40 30 10 8 6 4 20 2 10 0 0 0 40 80 120 160 200 240 280 0 40 80 I C - Amperes Fig. 9. Capacitance 160 200 240 280 Fig. 10. Reverse-Bias Safe Operating Area 240 10,000 Cies 200 160 1,000 I C - Amperes Capacitance - PicoFarads 120 QG - NanoCoulombs Coes 100 120 80 Cres o TJ = 150 C 40 RG = 1Ω dv / dt < 10V / ns f = 1 MHz 0 10 0 5 10 15 20 25 30 35 40 200 400 600 800 1000 1200 1400 1600 VCE - Volts VCE - Volts Fig. 11. Maximum Transient Thermal Impedance 1 Z(th)JC - K / W 0.1 0.01 0.001 0.0001 0.00001 0.0001 0.001 0.01 Pulse Width - Second IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 0.1 1 IXYX50N170C Fig. 12. Inductive Switching Energy Loss vs. Gate Resistance 35 Eoff 30 Eon o TJ = 150 C , VGE = 15V 40 24 35 20 Fig. 13. Inductive Switching Energy Loss vs. Collector Current Eoff Eon 25 RG = 1ΩVGE = 15V VCE = 850V VCE = 850V 30 25 15 20 10 16 20 12 15 o TJ = 150 C 8 10 E on - MilliJoules 20 E on - MilliJoules I C = 100A E off - MilliJoules 25 E off - MilliJoules 30 15 I C = 50A 5 4 10 5 o TJ = 25 C 0 0 5 1 2 3 4 5 6 7 8 9 20 10 30 40 50 Fig. 14. Inductive Switching Energy Loss vs. Junction Temperature Eon 0 100 24 12 20 9 16 6 12 td(off) 500 VCE = 850V 180 400 I C = 50A 160 300 I C = 100A 140 I C = 50A 3 50 75 100 200 8 0 25 4 150 125 120 100 1 2 3 4 tfi VCE = 850V 200 6 7 8 9 10 350 180 300 160 250 o TJ = 150 C 150 200 100 150 Fig. 17. Inductive Turn-off Switching Times vs. Junction Temperature tfi td(off) 280 260 RG = 1Ω, VGE = 15V VCE = 850V 240 I C = 100A 140 220 120 200 I C = 50A 100 180 80 160 o TJ = 25 C 50 100 I C = 100A 0 20 30 40 50 60 70 80 I C - Amperes © 2017 IXYS CORPORATION, All Rights Reserved 90 50 100 60 25 50 75 100 TJ - Degrees Centigrade 125 140 150 t d(off) - Nanoseconds 250 200 t d(off) - Nanoseconds t f i - Nanoseconds td(off) RG = 1Ω, VGE = 15V 400 t f i - Nanoseconds Fig. 16. Inductive Turn-off Switching Times vs. Collector Current 300 5 RG - Ohms TJ - Degrees Centigrade 350 t d(off) - Nanoseconds 15 600 o 28 E on - MilliJoules E off - MilliJoules 90 TJ = 150 C, VGE = 15V 200 I C = 100A VCE = 850V 18 tfi 32 RG = 1ΩVGE = 15V 80 Fig. 15. Inductive Turn-off Switching Times vs. Gate Resistance 220 36 t f i - Nanoseconds Eoff 21 70 I C - Amperes RG - Ohms 24 60 IXYX50N170C Fig. 19. Inductive Turn-on Switching Times vs. Gate Resistance tri 200 td(on) 120 30 80 20 I C = 50A 40 10 0 3 4 5 6 7 8 9 tri 60 20 o TJ = 25 C 40 18 20 16 30 40 50 60 70 80 90 14 100 34 30 140 28 120 26 I C = 100A 100 24 80 22 60 20 I C = 50A 40 18 20 16 0 50 22 32 VCE = 850V 25 80 75 100 125 t d(on) - Nanoseconds t r i - Nanoseconds td(on) RG = 1Ω, VGE = 15V 160 24 I C - Amperes Fig. 21. Inductive Turn-on Switching Times vs. Junction Temperature 180 26 o TJ = 150 C 100 20 10 RG - Ohms 200 VCE = 850V 0 0 2 28 t d(on) - Nanoseconds I C = 100A t d(on) - Nanoseconds 40 td(on) 30 RG = 1Ω, VGE = 15V 120 160 1 tri 140 50 o TJ = 150 C, VGE = 15V VCE = 850V t r i - Nanoseconds 160 60 t r i - Nanoseconds 240 Fig. 20. Inductive Turn-on Switching Times vs. Collector Current 14 150 TJ - Degrees Centigrade IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: IXY_50N170C (9T-AT653) 2-10-17 Disclaimer Notice - Information furnished is believed to be accurate and reliable. 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