IXZH16N60

IXZH16N60 Z-MOS RF Power MOSFET N-Channel Enhancement Switch Mode RF MOSFET Low Capacitance Z-MOSTM MOSFET Process Optimized for RF Operation Ideal for Class C, D, & E Applications VDSS = 600 V ID25 = 18 A Symbol Test Conditions RDS(on) ≤ 0.47  VDSS TJ = 25°C to 150°C 600 V PDC = 350 W VDGR TJ = 25°C to 150°C; RGS = 1 M 600 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 Tc = 25°C 18 A IDM Tc = 25°C, pulse width limited by TJM 90 A IAR Tc = 25°C 18 A EAR Tc = 25°C TBD mJ IS IDM, di/dt 100A/s, VDD  VDSS, Tj  150°C, RG = 0.2 5 V/ns dv/dt >200 V/ns 350 W 240 W 3.0 W RthJC 0.43 C/W RthJHS 0.63 C/W Maximum Ratings IS = 0 PDC PDHS Tc = 25°C, Derate 4.4W/°C above 25°C PDAMB Tc = 25°C TO-247AD Features Symbol Test Conditions Characteristic Values (TJ = 25°C unless otherwise specified) BVDSS VGS = 0 V, ID = 4 ma VGS(th) VDS = VGS, ID = 250 IGSS VGS = ±20 VDC, VDS = 0 IDSS VDS = 0.8VDSS VGS=0 =125C min. 3.2 V 4 TJ = 25C TJ VGS = 20 V, ID = 0.5ID25 Pulse test, t  300S, duty cycle d  2% gfs VDS = 50 V, ID = 0.5ID25, pulse test TJ 0.44 4 5.5 V ±100 nA 50 1 A mA 0.47  5.2 -55 TJM S +175 175 Tstg Weight max. 600 RDS(on) TL typ. -55 1.6mm(0.063 in) from case for 10 s °C °C + 175 °C 300 °C 3.5 g  IXYS advanced Z-MOS process  Low gate charge and capacitances  easier to drive  faster switching  Low RDS(on)  No beryllium oxide (BeO) or other hazardous materials  Standard TO-247 packaging Advantages  Optimized for RF and high speed  Easy to mount  High power density IXZH16N60 Z-MOS RF Power MOSFET Symbol Test Conditions Characteristic Values (TJ = 25°C unless otherwise specified) min. typ. max. RG 1 Ciss Coss 1930 pF 160 pF 16 pF 33 pF 4 ns 4 ns 4 ns 6 ns 41 nC 15 nC 20 nC VGS = 0 V, VDS = 0.8 VDSS(max), f = 1 MHz Crss Cstray Back Metal to any Pin Td(on) Ton Td(off) VGS = 15 V, VDS = 0.8 VDSS ID = 0.5 IDM RG = 1  (External) Toff Qg(on) Qgs VGS = 10 V, VDS = 0.5 VDSS ID = 0.5 ID25 IG = 3mA Qgd Source-Drain Diode Symbol Test Conditions IS VGS = 0 V ISM Repetitive; pulse width limited by TJM VSD IF = Is, VGS=0 V, Pulse test, t ≤ 300µs, duty cycle ≤2%  Characteristic Values (TJ = 25°C unless otherwise specified) min. typ. Trr max. 200 18  108 A 1.5 V ns CAUTION: Operation at or above the Maximum Ratings values may impact device reliability or cause permanent damage to the device. Information in this document is believed to be accurate and reliable. IXYSRF reserves the right to make changes to information published in this document at any time and without notice. IXYS RF reserves the right to change limits, test conditions and dimensions. IXYS RF MOSFETS are covered by one or more of the following U.S. patents: 4,835,592 4,860,072 4,881,106 4,891,686 4,931,844 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,640,045 6,404,065 6,583,505 6,710,463 6,731,002 5,017,508 5,486,715 6,727,585 IXZH16N60 Z-MOS RF Power MOSFET Fig. 1 Fig. 2 Typical Transfer Characteristics 8 V to15 V 20 50 Typical Output Characteristics 7V 40 ID, Drain Currnet (A) ID, Drain Current (A) 45 35 30 25 20 15 10 15 6.5V 10 6V 5 5.5 V 5 5V 0 0 4 5 6 7 8 9 10 11 0 12 20 Fig. 3 80 100 120 Fig. 4 Gate Charge vs. Gate-to-Source Voltage V DS = 300V, ID = 9A, IG= 3m A Extended Typical Output Characteristics 80 16 Top 14 ID, Drain Currnet (A) Gate-to-Source Voltage (V) 60 VDS, Drain-to-Source Voltage (V) VGS, Gate-to Source Voltage (V) 12 10 8 6 4 60 Bottom 10 V to 12V 9V 8V 7.5V 7V 6.5V 6V 5.5V 40 20 2 0 0 0 20 40 60 0 80 Fig. 5 VD S vs. Capacitance 10000 Ciss 1000 Coss 100 Crss 10 1 0 60 120 180 240 20 40 60 80 100 VDS, Drain-to-Source Voltage (V) Gate Charge (nC) Capacitance (pF) 40 300 VDS Voltage (V) 360 420 480 120 IXZH16N60 Z-MOS RF Power MOSFET Fig. 6 Package Drawing Gate Drain Source Drain Doc #dsIXZH16N60 REV 11/14 ©2014 IXYS RF An IXYS Company 1609 Oakridge Dr., Suite 100 Fort Collins, CO USA 80525 970-493-1901 Fax: 970-232-3025 Email: sales@ixyscolorado.com Web: http://www.ixyscolorado.com