L321

MUBW 10-12 A7 Converter - Brake - Inverter Module (CBI2) 21 D11 1 D12 D13 2 D14 D15 7 3 D16 14 23 24 8 NTC T7 22 D7 T1 16 15 6 T2 11 10 D2 12 D1 T3 18 17 T4 D3 T5 20 19 T6 13 D5 5 D4 4 D6 9 Three Phase Rectifier VRRM = 1600V IDAVM = 26 A IFSM = 160 A Brake Chopper VCES = 1200 V IC25 = 20 A VCE(sat) = 2.3 V Three Phase Inverter VCES = 1200 V IC25 = 20 A VCE(sat) = 2.3 V Application: AC motor drives with q Input Rectifier Bridge D11 - D16 Symbol VRRM IFAV IDAVM IFSM Ptot TC = 80°C; sine 180° TC = 80°C; rectangular; d = 1/3 TVJ = 25°C; t = 10 ms; sine 50 Hz TC = 25°C Conditions Maximum Ratings 1600 19 18 160 85 V A A A W q q Input from single or three phase grid Three phase synchronous or asynchronous motor electric braking operation Features q q q Symbol Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. 1.3 1.3 1 1 1.6 0.1 V V mA mA µs 1.47 K/W q VF IR trr RthJC IF = 10 A; TVJ = 25°C TVJ = 125°C VR = VRRM; TVJ = 25°C TVJ = 125°C VR = 100 V; IF = 10 A; di/dt = -10 A/µs (per diode) q q High level of integration - only one power semiconductor module required for the whole drive Fast rectifier diodes for enhanced EMC behaviour NPT IGBT technology with low saturation voltage, low switching losses, high RBSOA and short circuit ruggedness Epitaxial free wheeling diodes with Hiperfast and soft reverse recovery Industry standard package with insulated copper base plate and soldering pins for PCB mounting Temperature sense included IXYS reserves the right to change limits, test conditions and dimensions. © 2001 IXYS All rights reserved 1-8 105 MUBW 10-12 A7 Output Inverter T1 - T6 Symbol VCES VGES VGEM IC25 IC80 RBSOA tSC (SCSOA) Ptot Conditions TVJ = 25°C to 150°C Continuous Transient TC = 25°C TC = 80°C VGE = ±15 V; RG = 82 Ω; TVJ = 125°C Clamped inductive load; L = 100 µH Maximum Ratings 1200 ± 20 ± 30 20 15 ICM = 20 VCEK ≤ VCES 10 105 V V V A A A µs W Equivalent Circuits for Simulation Conduction D11 - D16 Rectifier Diode (typ. at TJ = 125°C) V0 = 1.11 V; R0 = 19 mΩ T1 - T6 / D1 - D6 IGBT (typ. at VGE = 15 V; TJ = 125°C) V0 = 1.32V; R0 = 131 mΩ Free Wheeling Diode (typ. at TJ = 125°C) V0 = 1.39 V; R0 = 56 mΩ T7 / D7 IGBT (typ. at VGE = 15 V; TJ = 125°C) V0 = 1.32 V; R0 = 131 mΩ Free Wheeling Diode (typ. at TJ = 125°C) V0 = 1.39 V; R0 = 56 mΩ VCE = 720 V; VGE = ±15 V; RG = 82 Ω; TVJ = 125°C non-repetitive TC = 25°C Symbol Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. 2.3 2.7 4.5 0.6 200 50 40 290 60 1.2 1.1 600 45 2.7 6.5 0.6 V V V mA mA nA ns ns ns ns mJ mJ pF nC 1.2 K/W VCE(sat) VGE(th) ICES IGES td(on) tr td(off) tf Eon Eoff Cies QGon RthJC IC = 10 A; VGE = 15 V; TVJ = 25°C TVJ = 125°C IC = 0.4 mA; VGE = VCE VCE = VCES; VGE = 0 V; TVJ = 25°C TVJ = 125°C VCE = 0 V; VGE = ± 20 V Thermal Response Inductive load, TVJ = 125°C VCE = 600 V; IC = 10 A VGE = ±15 V; RG = 82 Ω D11 - D16 Rectifier Diode (typ.) Cth1 = 0.093 J/K; Rth1 = 1.212 K/W Cth2 = 0.778 J/K; Rth2 = 0.258K/W T1 - T6 / D1 - D6 IGBT (typ.) Cth1 = 0.09 J/K; Rth1 = 0.954 K/W Cth2 = 0.809J/K; Rth2 = 0.246 K/W VCE = 25 V; VGE = 0 V; f = 1 MHz VCE = 600V; VGE = 15 V; IC = 10 A (per IGBT) Output Inverter D1 - D6 Symbol IF25 IF80 Conditions TC = 25°C TC = 80°C Maximum Ratings 17 11 A A Free Wheeling Diode (typ.) Cth1 = 0.043 J/K; Rth1 = 2.738 K/W Cth2 = 0.54 J/K; Rth2 = 0.462 K/W T7 / D7 Symbol VF IRM trr RthJC Conditions IF = 10 A; VGE = 0 V; TVJ = 25°C TVJ = 125°C IF = 10 A; diF/dt = -400 A/µs; TVJ = 125°C VR = 600 V; VGE = 0 V (per diode) Characteristic Values min. typ. max. 2.9 1.9 13 110 V V A ns 3.2 K/W IGBT (typ.) Cth1 = 0.09 J/K; Rth1 = 0.954 K/W Cth2 = 0.809 J/K; Rth2 = 0.246 K/W Free Wheeling Diode (typ.) Cth1 = 0.043 J/K; Rth1 = 2.738 K/W Cth2 = 0.54 J/K; Rth2 = 0.462 K/W © 2001 IXYS All rights reserved 2-8 MUBW 10-12 A7 Brake Chopper T7 Symbol VCES VGES VGEM IC25 IC80 RBSOA tSC (SCSOA) Ptot Symbol Conditions TVJ = 25°C to 150°C Continuous Transient TC = 25°C TC = 80°C VGE = ±15 V; RG = 82 Ω; TVJ = 125°C Clamped inductive load; L = 100 µH Maximum Ratings 1200 ± 20 ± 30 20 15 ICM = 20 VCEK ≤ VCES 10 105 V V V A A A µs W VCE = 720 V; VGE = ±15 V; RG = 82 Ω; TVJ = 125°C non-repetitive TC = 25°C Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. 2.3 2.7 4.5 0.3 200 50 40 290 60 1.2 1.1 600 45 2.7 6.5 0.5 V V V mA mA nA ns ns ns ns mJ mJ pF nC 1.2 K/W VCE(sat) VGE(th) ICES IGES td(on) tr td(off) tf Eon Eoff Cies QGon RthJC IC = 10 A; VGE = 15 V; TVJ = 25°C TVJ = 125°C IC = 0.4 mA; VGE = VCE VCE = VCES; VGE = 0 V; TVJ = 25°C TVJ = 125°C VCE = 0 V; VGE = ± 20 V Inductive load, TVJ = 125°C VCE = 600 V; IC = 10 A VGE = ±15 V; RG = 82 Ω VCE = 25 V; VGE = 0 V; f = 1 MH z VCE = 600 V; VGE = 15 V; IC = 10 A Brake Chopper D7 Symbol VRRM IF25 IF80 Symbol VF IR IRM trr RthJC © 2001 IXYS All rights reserved Conditions TVJ = 25°C to 150°C TC = 25°C TC = 80°C Conditions IF = 10 A; TVJ = 25°C TVJ = 125°C VR = VRRM; TVJ = 25°C TVJ = 125°C IF = 10 A; diF/dt = -400 A/µs; TVJ = 125°C VR = 600 V Maximum Ratings 1200 17 11 V A A Characteristic Values min. typ. max. 2.9 1.9 0.06 0.07 13 110 V V mA mA A ns 3.2 K/W 3-8 MUBW 10-12 A7 Temperature Sensor NTC Symbol R25 B25/50 Module Symbol TVJ TJM Tstg VISOL Md Symbol Rpin-chip dS dA RthCH Weight Creepage distance on surface Strike distance in air with heatsink compound 6 6 0.02 180 Conditions Operating Maximum Ratings -40...+125 150 -40...+125 2500 2.7 - 3.3 °C °C °C V~ Nm Conditions T = 25°C Characteristic Values min. typ. max. 4.75 5.0 3375 5.25 kΩ K IISOL ≤ 1 mA; 50/60 Hz Mounting torque (M5) Conditions Characteristic Values min. typ. max. 5 mΩ mm mm K/W g Dimensions in mm (1 mm = 0.0394") © 2001 IXYS All rights reserved 4-8 MUBW 10-12 A7 Input Rectifier Bridge D11 - D16 50 A 40 IF 30 TVJ= 125°C TVJ= 25°C 60 102 20 40 TVJ= 150°C TVJ= 150°C TVJ= 45°C 100 50Hz, 80% VRRM A 80 IFSM TVJ= 45°C I2t 103 A2s 10 20 0 0.0 0.4 0.8 1.2 VF 1.6 V 2.0 0 0.001 101 0.01 0.1 t s 1 1 2 3 4 5 6 7 ms10 89 t Fig. 1 Forward current versus voltage drop per diode 500 W 400 Ptot 300 Fig. 2 Surge overload current Fig. 3 I2t versus time per diode 60 A 50 Id(AV) 40 200 RthA: 0.05 K/W 0.15 K/W 0.3 K/W 0.5 K/W 1 K/W 2 K/W 5 K/W 30 20 100 10 0 0 20 40 60 80 Id(AV)M A 0 20 40 60 80 100 120 140 °C Tamb 0 0 20 40 60 80 100 120 140 °C TC Fig. 4 1 1.6 K/W 1.2 ZthJC Power dissipation versus direct output current and ambient temperature, sin 8 0 ° Fig. 5 Max. forward current versus case temperature 0.8 0.4 0.0 0.001 DWF N9-16 0.01 0.1 1 t s 10 Fig. 6 Transient thermal impedance junction to case © 2001 IXYS All rights reserved 5-8 MUBW 10-12 A7 Output Inverter T1 - T6 / D1 - D6 30 25 A IC 30 25 A VGE = 17V 15V 13V IC 20 15 11V 20 15 10 5 0 0 1 VGE = 17V 15V 13V 11V 10 9V 9V TVJ = 25°C 5 TVJ = 125°C 0 2 3 4 VCE 5 6V7 0 1 2 3 4 5 VCE 6V7 Fig. 7 Typ. output characteristics Fig. 8 Typ. output characteristics 30 25 A IC IF 30 25 A 20 TVJ = 125°C TVJ = 25°C 20 15 10 TVJ = 125°C TVJ = 25°C 15 10 5 VCE = 20V 5 0 4 6 8 10 12 VGE 14 V 16 0 0 1 2 VF 3 V 4 Fig. 9 Typ. transfer characteristics Fig. 10 Typ. forward characteristics of free wheeling diode 40 trr 20 V $ ns   trr 15 VGE IRM A 30 10 20 TVJ = 125°C VR = 600V IF = 10A MUBW1012A7 & "  5 VCE = 600V IC = 10A 10 IRM 0 0 10 20 30 40 QG nC 50 0 60 0 200 400 600 800 s A/µ -di/dt 1000 Fig. 11 Typ. turn on gate charge Fig. 12 Typ. turn off characteristics of free wheeling diode © 2001 IXYS All rights reserved 6-8 MUBW 10-12 A7 Output Inverter T1 - T6 / D1 - D6 4 mJ Eon VCE = 600V VGE = ±15V RG = 82Ω TVJ = 125°C 80 ns 60 t 40 Eoff 4 mJ 400 ns 300 t 200 3 3 VCE = 600V VGE = ±15V RG = 82Ω TVJ = 125°C Jd(off) Eoff Jd(on) 2 Jr 2 1 Eon 20 1 Jf 100 0 0 5 10 15 IC 20 A 0 0 0 5 10 15 IC 20 A 0 Fig. 13 Typ. turn on energy and switching times versus collector current 2.0 mJ Eon 1.5 VCE = 600V VGE = ±15V IC = 10A TVJ = 125°C Fig. 14 Typ. turn off energy and switching times versus collector current 1.2 Eoff mJ t Eoff Jd(off) VCE = 600V VGE = ±15V IC = 10A TVJ = 125°C Eon 100 ns 600 ns 400 t Jd(on) Jr 75 0.8 1.0 50 0.4 0.5 25 200 Jf 0.0 0 20 40 60 80 100 RG 0 120 Ω 140 0.0 0 20 40 60 80 100 RG 0 120 Ω 140 Fig. 15 Typ. turn on energy and switching times versus gate resistor 25 A 10 K/W ZthJC 1 Fig.16 Typ. turn off energy and switching times versus gate resistor diode IGBT 20 ICM 15 10 5 0 0 0.1 0.01 single pulse RG = 82 Ω TVJ = 125°C 0.001 0.0001 0.00001 0.0001 0.001 MUBW1012A7 200 400 600 800 1000 1200 1400 V VCE 0.01 0.1 t 1 s 10 Fig. 17 Reverse biased safe operating area RBSOA Fig. 18 Typ. transient thermal impedance © 2001 IXYS All rights reserved 7-8 MUBW 10-12 A7 Brake Chopper T7 / D7 30 A 25 IC IF 30 A 25 20 TVJ = 25°C TVJ = 125°C TVJ = 125°C TVJ = 25°C 20 15 10 5 VGE = 15V 15 10 5 0 0 0 1 2 3 4 VCE 5 V6 0 1 2 VF 3 V 4 Fig. 19 Typ. output characteristics Fig. 20 Typ. forward characteristics of free wheeling diode 500 2.5 mJ Eoff 2.0 VCE = 600V VGE = ±15V RG = 82Ω TVJ = 125°C 1.2 mJ t Eoff Eoff Jd(off) VCE = 600V VGE = ±15V IC = 20A TVJ = 125°C 600 ns t 400 ns 400 Jd(off) 300 200 0.8 1.5 1.0 0.5 0.0 0 4 8 Eoff Jf 0.4 100 200 Jf 0 A 20 0.0 0 20 40 60 80 100 12 IC 16 0 120 Ω 140 RG Fig. 21 Typ. turn off energy and switching times versus collector current 10 K/W 1 ZthJC 0.1 R 0.01 0.001 single pulse diode IGBT Fig. 22 Typ. turn off energy and switching times versus gate resistor Temperature Sensor NTC 10000 Ω 1000 0.0001 0.00001 0.0001 0.001 100 0.01 0.1 t 1 s 10 0 25 50 75 100 T MUBW1012A7 125 °C 150 Fig. 23 Typ. transient thermal impedance Fig. 24 Typ. thermistorresistance versus temperature © 2001 IXYS All rights reserved 8-8