Advanced Technical Information
High Voltage BIMOSFETTM
in High Voltage ISOPLUS i4-PACTM Monolithic Bipolar MOS Transistor
IXBF 9N140 IC25 IXBF 9N160 VCES
VCE(sat) tf
= = = =
7A 1400/1600 V 4.9V 40 ns
1 5
IGBT Symbol VCES VGES IC25 IC90 ICM VCEK Ptot TC = 25°C TC = 90°C VGE = 15/0 V; RG = 100 W; TVJ = 125°C RBSOA, Clamped inductive load; L = 100 µH TC = 25°C Conditions TVJ = 25°C to 150°C IXBF 9N140 IXBF 9N160 Maximum Ratings 1400 1600 ± 20 7 4 12 0.8VCES 70 V V V A A A W
Features • High Voltage BIMOSFETTM - substitute for high voltage MOSFETs with significantly lower voltage drop - fast switching for high frequency operation - reverse conduction capability • ISOPLUS i4-PACTM high voltage package - isolated back surface - enlarged creepage towards heatsink - enlarged creepage between high voltage pins - application friendly pinout - high reliability - industry standard outline
Symbol
Conditions
Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. 4.9 5.6 4 0.1 500 200 60 180 40 550 44 3.6 7 8 0.1 V V V mA mA nA ns ns ns ns pF nC V 1.75 K/W
Applications • switched mode power supplies • DC-DC converters • resonant converters • lamp ballasts • laser generators, x ray generators
VCE(sat) VGE(th) ICES IGES td(on) tr td(off) tf C ies QGon VF RthJC
IC = 5 A; VGE = 15 V; TVJ = 25°C TVJ = 125°C IC = 0.5 mA; VGE = VCE VCE = 0.8VCES; VGE = 0 V; TVJ = 25°C TVJ = 125°C VCE = 0 V; VGE = ± 20 V Inductive load, TVJ = 125°C VCE = 960 V; IC = 5 A VGE = 15/0 V; RG = 100 W VCE = 25 V; VGE = 0 V; f = 1 MHz VCE = 600V; VGE = 15 V; IC = 7 A (reverse conduction); IF = 5 A
IXYS reserves the right to change limits, test conditions and dimensions.
© 2000 IXYS All rights reserved
1-4
031
IXBF 9N140 IXBF 9N160
Component Symbol TVJ Tstg VISOL FC Symbol dS,dA dS,dA RthCH Weight IISOL £ 1 mA; 50/60 Hz mounting force with clip Conditions C pin - E pin pin - backside metal with heatsink compound Conditions Maximum Ratings -55...+150 -55...+125 2500 20...120 °C °C V~ N Dimensions in mm (1 mm = 0.0394")
Characteristic Values min. typ. max. 7 5.5 0.15 9 mm mm K/W g
© 2000 IXYS All rights reserved
2-4
IXBF 9N140 IXBF 9N160
30
TJ = 25°C VGE = 17V 15V
30
TJ = 125°C
VGE = 17V
15V 13V
25
13V
25
20 15 10 5 0 0 2 4 6 8 10 12 14 16 18
IC - Amperes
IC - Amperes
20 15 10 5 0
0
2
4
6
8
10
12
14
16
18
VCE - Volts
VCE - Volts
Fig. 1 Typ. Output Characteristics
30
VCE = 20V
Fig. 2 Typ. Output Characteristics
30 25
25
TJ = 25°C TJ = 125°C
TJ = 25°C
TJ = 125°C
IF - Amperes
IC - Amperes
20 15 10 5 0 4 6 8 10 12 14
20 15 10 5 0
0
2
4
6
8
10
VGE - Volts
VF - Volts
Fig. 3 Typ. Transfer Characteristics
Fig. 4 Typ. Characteristics of Reverse Conduction
15
16 14 12
VCE = 600V IC = 5A
ICM - Amperes
VGE - Volts
10 8 6 4 2 0 0 10 20 30 40 50
10
TJ = 125°C VCEK < VCES
5
IXBF 9N140 IXBF 9N160
0 0 400 800 1200 1600
QG - nanocoulombs
VCE - Volts
Fig. 5 Typ. Gate Charge characteristics
Fig. 6 Reverse Biased Safe Operating Area RBSOA
© 2000 IXYS All rights reserved
3-4
IXBF 9N140 IXBF 9N160
70 250
TJ = 125°C
50 40 30 20 0 2 4 6 8 10 12 14 16
td(off )- nanoseconds
tfi - nanoseconds
60 RG = 100W
VCE = 960V VGE = 15V
VCE = 960V VGE = 15V 200 IC = 5A TJ = 125°C
150 100 50 0 0 20 40 60 80 100 120 140 160
IC - Amperes
Rg - Ohms
Fig. 7 Typ. Fall Time
10
Fig. 8 Typ. Turn Off Delay Time
1
ZthJC - K/W
0.1
Single Pulse
0.01
0.001 0.0001
IXBF09
0.001
0.01
0.1
1
10
Pulse Width - Seconds
Fig. 9 Typ. Transient Thermal Impedance
© 2000 IXYS All rights reserved
4-4
很抱歉,暂时无法提供与“L412”相匹配的价格&库存,您可以联系我们找货
免费人工找货