L558

VWI 20-06P1 IGBT Module Sixpack in ECO-PAC 2 IC25 = 19 A = 600 V VCES VCE(sat) typ. = 1.9 V S9 N9 L9 N5 R5 X 18 W 14 K 12 NTC J 13 A5 D5 H5 Preliminary data A1 F3 G1 C1 K 10 Pin arangement see outlines IGBTs Symbol VCES VGES IC25 IC80 ICM VCEK tSC (SCSOA) Ptot TC = 25°C TC = 80°C VGE = ±15 V; RG = 82 Ω; TVJ = 125°C RBSOA, Clamped inductive load; L = 100 µH VCE = 720 V; VGE = ±15 V; RG = 82 Ω; TVJ = 125°C non-repetitive TC = 25°C Conditions TVJ = 25°C to 150°C Maximum Ratings 600 ± 20 19 14 20 VCES 10 73 µs V V A A A Features • NPT IGBT's - positive temperature coefficient of saturation voltage - fast switching • FRED diodes - fast reverse recovery - low forward voltage • Industry Standard Package - solderable pins for PCB mounting - isolated DCB ceramic base plate Typical Applications W • AC drives • power supplies with power factor correction Symbol Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. 1.9 2.2 4.5 2.7 100 35 35 230 30 0.4 0.3 600 39 3.4 2.4 6.5 0.6 V V V mA mA nA ns ns ns ns mJ mJ pF nC 1.7 K/W K/W VCE(sat) VGE(th) ICES IGES td(on) tr td(off) tf Eon Eoff Cies QGon RthJC RthJH IC = 10 A; VGE = 15 V; TVJ = 25°C TVJ = 125°C IC = 0.35 mA; VGE = VCE VCE = VCES; VGE = 0 V; TVJ = 25°C TVJ = 125°C VCE = 0 V; VGE = ± 20 V Inductive load, TVJ = 125°C VCE = 300 V; IC = 10 A VGE = ±15 V; RG = 82 Ω VCE = 25 V; VGE = 0 V; f = 1 MHz VCE = 300 V; VGE = 15 V; IC = 10 A (per IGBT) with heatsink compound (0.42 K/m.K; 50 µm) IXYS reserves the right to change limits, test conditions and dimensions. © 2003 IXYS All rights reserved IXYS Semiconductor GmbH Edisonstr. 15, D-68623 Lampertheim Phone: +49-6206-503-0, Fax: +49-6206-503627 1-5 www.ixys.net IXYS Corporation 3540 Bassett Street, Santa Clara CA 95054 Phone: (408) 982-0700, Fax: 408-496-0670 308 VWI 20-06P1 Dimensions in mm (1 mm = 0.0394") Conditions TC = 25°C TC = 80°C Maximum Ratings 21 14 A A Diodes Symbol IF25 IF80 Symbol VF IRM t rr RthJC RthJH Conditions IF = 10 A; TVJ = 25°C TVJ = 125°C IF = 10 A; diF/dt = -400 A/µs; TVJ = 125°C VR = 300 V; VGE = 0 V with heatsink compound (0.42 K/m.K; 50 µm) Characteristic Values min. typ. max. 1.9 1.4 11 80 7.0 2.1 V V A ns 3.5 K/W K/W Data according to IEC 60747 and refer to a single diode unless otherwise stated. Temperature Sensor NTC Symbol R25 B25/50 Component Symbol TVJ Tstg VISOL Md a IISOL ≤ 1 mA; 50/60 Hz; t = 1 s mounting torque (M4) Max. allowable acceleration Conditions Maximum Ratings -40...+150 -40...+125 3600 1.5 - 2.0 14 - 18 50 °C °C V~ Nm lb.in. m/s2 Conditions T = 25°C Characteristic Values min. typ. max. 4.75 5.0 3375 5.25 k Ω K Symbol dS dA Weight Conditions Creepage distance on surface (Pin to heatsink) Strike distance in air (Pin to heatsink) Characteristic Values min. typ. max. 11.2 11.2 24 mm mm g IXYS reserves the right to change limits, test conditions and dimensions. © 2003 IXYS All rights reserved 2-5 308 VWI 20-06P1 IGBT IXYS reserves the right to change limits, test conditions and dimensions. © 2003 IXYS All rights reserved 3-5 308 VWI 20-06P1 IGBT Transient thermal resistance junction to heatsink 10 (ZthJH is measured using 50 µm thermal grease) 1 IGBT ZthJH [K/W] D=0 D = 0.005 D = 0.01 D = 0.02 D = 0.05 D = 0.1 D = 0.2 D = 0.5 0.1 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 0.001 100 t (s) IXYS reserves the right to change limits, test conditions and dimensions. 308 © 2003 IXYS All rights reserved 4-5 VWI 20-06P1 Diode 30 A 25 IF 20 15 10 0.4 5 0 0.0 0.2 0.0 100 0 0 200 400 10 TVJ=150°C TVJ=100°C TVJ= 25°C 1.4 T = 100°C nC VJ V = 300V 1.2 R Qr 1.0 0.8 0.6 IF= 20A IF= 10A IF= 5A 40 TVJ= 100°C A VR = 300V IRM 30 IF= 20A IF= 10A IF= 5A 20 0.5 1.0 1.5 VF 2.0 V 2.5 A/µs 1000 -diF/dt 600 A/µs 1000 800 -diF/dt Forward current IF versus VF Reverse recovery charge Qr versus -diF/dt 120 ns 110 TVJ= 100°C VR = 300V Peak reverse current IRM versus -diF/dt 20 V VFR 15 VFR 2.0 1.2 µs 0.9 tfr 1.5 Kf 1.0 IRM trr 100 IF= 20A IF= 10A IF= 5A tfr 90 10 0.6 0.5 Qr 80 5 TVJ= 100°C IF = 10A 0.3 70 0.0 0 40 80 120 °C 160 TVJ 0 200 400 600 -diF/dt 800 A/µs 1000 0 0 200 400 0.0 600 A/µs 1000 800 diF/dt 8-06A Dynamic parameters Qr, IRM versus TVJ Recovery time trr versus -diF/dt Peak forward voltage VFR and tfr versus diF/dt 10 (ZthJH is measured using 50 µm thermal grease) 1 D=0 D = 0.005 D = 0.01 D = 0.02 D = 0.05 D = 0.1 D = 0.2 D = 0.5 0.00001 0.0001 0.001 0.01 0.1 1 10 100 Fred ZthJH[K/W] 0.1 0.01 0.001 t(s) IXYS reserves the right to change limits, test conditions and dimensions. © 2003 IXYS All rights reserved 5-5 308 Transient thermal resistance junction to heatsink