LKK47-06C5

LKK 47-06C5 Advanced Technical Information Dual CoolMOS™ 1) Power MOSFET VDSS = 600 V ID25 = 47 A Ω/MOSFET RDS(on) max = 45 mΩ Common Source Topology DCB isoated package 4 D1 T1 2 G1 3 S 1 2 3 4 5 T2 1 G2 5 D2 Features MOSFET T1/T2 Symbol Conditions VDSS VD1D2 TVJ = 25°C TVJ = 25°C Maximum Ratings VGS 600 ±600 V V ±20 V 47 32 A A 1950 3 mJ mJ ID25 ID90 TC = 25°C TC = 90°C EAS EAR single pulse repetitive Symbol Conditions RDSon VGS = 10 V; ID = 44 A 40 45 mΩ RDSon total between D1 and D2 VG1S = VG2S = 10 V; ID = 44 A 80 mΩ VGSth VDS = VGS; ID = 3 mA IDSS VDS = VDSS; VGS = 0 V; TVJ = 25°C TVJ = 125°C ID = 11 A; TC = 25°C Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. 2.5 3 3.5 V 10 µA µA 100 nA 50 IGSS VGS = ±20 V; VDS = 0 V Ciss Coss VGS = 0 V; VDS = 100 V f = 1 MHz Qg Qgs Qgd VGS= 0 to10 V; VDS = 400 V; ID = 44 A 150 35 50 td(on) tr td(off) tf VGS= 10 V; VDS = 400 V; ID = 44 A; RG = 3.3 Ω 30 20 100 10 ns ns ns ns RthJC RthCH with heatsink compound 0.25 0.45 K/W K/W IXYS reserves the right to change limits, test conditions and dimensions. © 2009 IXYS All rights reserved 6800 320 • fast CoolMOS™ 1) power MOSFET 4th generation - High blocking capability - Lowest resistance - Avalanche rated for unclamped inductive switching (UIS) - Low thermal resistance due to reduced chip thickness • Enhanced total power density Applications • AC Switch - power regulation of AC heating - light dimming • Power factor correction (PFC) interleaved operation mode • Push pull converter 1) CoolMOS™ is a trademark of Infineon Technologies AG. pF pF 190 nC nC nC 20090209b 1-4 Advanced Technical Information LKK 47-06C5 Source-Drain Diode Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. IS VGS = 0 V VSD IF = 44 A; VGS = 0 V t rr QRM IRM IF = 44 A; -di/dt = 100 A/µs; VR = 400 V 0.9 44 A 1.2 V 600 17 60 ns µC A Component Symbol Conditions Maximum Ratings TVJ Tstg VISOL IISOL < 1 mA; 50/60 Hz; t = 1 min FC Mounting force with clip Symbol Conditions CP coupling capacity between shorted pins and mounting tab in the case dS, dA dS, dA pin - pin pin - backside metal Weight -55...+150 -55...+150 °C °C 2500 V~ 40 - 180 N Characteristic Values min. typ. max. 50 tbd tbd pF mm mm 10 g 20090209b © 2009 IXYS All rights reserved 2-4 LKK 47-06C5 Advanced Technical Information ISOPLUS264 S U A E R1 D Q1 T R Q A2 6 1 3 4 5 L L1 2 b c b2 b1 b3 A1 e NOTE: 1.TAP 6 = ELECTRICALLY ISOLATED 2,500V FROM THEOTHERPINS. 2. ALL LEADSAREPb FREESOLDER DIPPE D. All curves for single MOSFET T1 or T2 only 250 TJ = 25°C VGS = 20 V 140 10 V 8 V 8V TJ = 150°C 7V 10 V 120 7V 200 6V VGS = 20 V 100 5.5 V 150 I D [A] I D [A] 80 6V 60 100 5V 5.5 V 40 4.5 V 5V 50 20 4.5 V 0 0 0 5 10 15 20 0 5 10 15 20 V DS [V] V DS [V] Fig. 1 Typ. output characteristics Fig. 2 Typ. output characteristics 20090209b © 2009 IXYS All rights reserved 3-4 LKK 47-06C5 Advanced Technical Information 0.16 320 0.12 ID = 44 A VGS = 10 V TJV = 150°C 5.5 V VDS = 5 V 6V 6.5 V 7V 0.12 VDS > 2·RDS(on) max · ID 25 °C 280 0.1 240 0.08 0.08 I D [A] R DS(on) [ ] R DS(on) [ ] 200 20 V 0.06 98 % 160 150 °C 120 typ TJ = 0.04 0.04 80 0.02 40 0 0 0 20 40 60 80 0 100 -60 -20 20 60 I D [A] 140 180 0 2 4 T j [°C] Fig. 3 Typ. drain-source on-state resistance 10 100 Fig. 4 Drain-source on-state resistance 3 6 8 10 V GS [V] Fig. 5 Typ. transfer characteristics 12 10 5 ID = 11 A pulsed VGS = 0 V f = 1 MHz 10 10 4 10 3 Ciss VDS = 50 V 2 1 20 V 8 150 °C, 98% 25 °C 40 0V I F [A] V GS [ V] TJ = 150 °C C [ p F] 10 6 25 °C, 98% 10 1 Coss 10 2 10 1 10 0 4 Crss 2 10 0 0 0 0.5 1 1.5 2 0 50 100 0 150 Fig. 6 Forward characteristic of reverse diode 100 200 Fig. 8 Typ. capacitances 700 10 ID = 11 A 150 V DS [V] Fig. 7 Typ. gate charge 2000 0 ID = 0.25 mA 1500 660 0.5 1000 -1 Z th J C [ K / W ] V BR(DSS) [ V] 10 E AS [ m J ] 50 Q gate [nC] V SD [V] 620 0.2 D = tp/T 0.1 0.05 10 -2 0.02 500 580 0.01 0 540 20 60 100 140 T j [°C] Fig. 9 Avalanche energy 180 10 -60 -20 20 60 100 140 T j [°C] 180 single pulse -3 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 t p [s] Fig. 10 Drain-source breakdown voltage 20090209b © 2009 IXYS All rights reserved 4-4 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications.Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.