M2325HA400

Date:- 21st November, 2019 Data Sheet Issue:- A1 Fast Recovery Diode Types M2325HA400 and M2325HA450 Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VRRM Repetitive peak reverse voltage, (note 1) 4000-4500 V VRSM Non-repetitive peak reverse voltage, (note 1) 4100-4600 V MAXIMUM LIMITS UNITS OTHER RATINGS (note 6) IF(AV) Mean forward current, Tsink=55°C, (note 2) 2325 A IF(AV) Mean forward current. Tsink=100°C, (note 2) 1550 A IF(AV) Mean forward current. Tsink=100°C, (note 3) 775 A IF(RMS) Nominal RMS forward current, Tsink=25°C, (note 2) 4330 A IF(d.c.) D.C. forward current, Tsink=25°C, (note 4) 3820 A IFSM Peak non-repetitive surge tp=10ms, VRM=0.6VRRM, (note 5) 28.0 kA IFSM2 Peak non-repetitive surge tp=10ms, VRM10V, (note 5) 30.8 kA I2 t I2 t 3.92×106 A2s I2 t I2t capacity for fusing tp=10ms, VRM10V, (note 5) 4.74×106 A2s THS Operating temperature range -40 to +150 °C Tstg Storage temperature range -40 to +150 °C capacity for fusing tp=10ms, VRM=0.6VRRM, (note 5) Notes:1) De-rating factor of 0.13% per °C is applicable for Tj below 25°C. 2) Double side cooled, single phase; 50Hz, 180° half-sinewave. 3) Single side cooled, single phase; 50Hz, 180° half-sinewave. 4) Double side cooled. 5) Half-sinewave, 150°C Tj initial. Data Sheet. Types M2325HA400 and M2325HA450 Issue A1 Page 1 of 12 November, 2019 Fast Recovery Diode Types M2325HA400-450 Characteristics PARAMETER MIN. TYP. MAX. TEST CONDITIONS (Note 1) UNITS VFM Maximum peak forward voltage - - 2.60 V0 Threshold voltage - - 1.581 V rS Slope resistance - - 0.402 m VFRM Maximum forward recovery voltage - - 115 di/dt = 1000A/µs - - 75 di/dt = 1000A/µs, Tj=25°C IRRM Peak reverse current - - 150 Rated VRRM Qrr Reverse Recovery Charge - 2400 2650 Qra Recovered charge, 50% Chord - 1460 - IFM=1000A, tp=500µs, di/dt=200A/µs, Irm Reverse Recovery Current - 540 - Vr=50V, 50% Chord. trr Reverse recovery time, 50% Chord - 5.4 - - - 0.0105 Double side cooled - - 0.0173 Anode side cooled - - 0.0273 Cathode side cooled 30 - 40 kN - 1.2 - kg Rth(j-hs) Thermal resistance, junction to heatsink F Mounting force Wt Weight IFM=2500A V V mA µC A µs K/W Notes:1) Unless otherwise indicated Tj=150°C. Data Sheet. Types M2325HA400 and M2325HA450 Issue A1 Page 2 of 12 µC November, 2019 Fast Recovery Diode Types M2325HA400-450 Notes on Ratings and Characteristics 1.0 Voltage Grade Table Voltage Grade VRRM (V) 4000 4500 40 45 VRSM (V) 4100 4600 VR dc (V) 2000 2100 2.0 De-rating Factor A blocking voltage de-rating factor of 0.13% per °C is applicable to this device for T j below 25°C. 3.0 ABCD Constants These constants (applicable only over current range of VF characteristic in Figure 1) are the coefficients of the expression for the forward characteristic given below: VF = A + B  ln( I F ) + C  I F + D  I F where IF = instantaneous forward current. 4.0 Reverse recovery ratings (i) Qra is based on 50% Irm chord as shown in Fig.(a) below. (ii) Qrr is based on a 150s integration time. 150 s I.e. Qrr = i rr .dt 0 (iii) K Factor = Data Sheet. Types M2325HA400 and M2325HA450 Issue A1 t1 t2 Page 3 of 12 November, 2019 Fast Recovery Diode Types M2325HA400-450 5.0 Reverse Recovery Loss The following procedure is recommended for use where it is necessary to include reverse recovery loss. From waveforms of recovery current obtained from a high frequency shunt (see Note 1) and reverse voltage present during recovery, an instantaneous reverse recovery loss waveform must be constructed. Let the area under this waveform be E joules per pulse. A new sink temperature can then be evaluated from:  TSINK = TJ ( MAX ) − E  k + f  Rth( J − Hs )  Where k = 0.2314 (°C/W)/s E = Area under reverse loss waveform per pulse in joules (W.s.) f = Rated frequency in Hz at the original sink temperature. Rth(J-Hs) = d.c. thermal resistance (°C/W) The total dissipation is now given by: W(tot ) = W( original) + E  f NOTE 1 - Reverse Recovery Loss by Measurement This device has a low reverse recovered charge and peak reverse recovery current. When measuring the charge, care must be taken to ensure that: (a) AC coupled devices such as current transformers are not affected by prior passage of high amplitude forward current. (b) A suitable, polarised, clipping circuit must be connected to the input of the measuring oscilloscope to avoid overloading the internal amplifiers by the relatively high amplitude forward current signal. (c) Measurement of reverse recovery waveform should be carried out with an appropriate critically damped snubber, connected across diode anode to cathode. The formula used for the calculation of this snubber is shown below: R2 = 4  Where: Vr CS  di dt Vr = Commutating source voltage CS = Snubber capacitance R = Snubber resistance Data Sheet. Types M2325HA400 and M2325HA450 Issue A1 Page 4 of 12 November, 2019 Fast Recovery Diode Types M2325HA400-450 6.0 Computer Modelling Parameters 6.1 Device Dissipation Calculations I AV − Vo + Vo 2 + 4  ff 2  rs  W AV = 2  ff 2  rs Where Vo = 1.581V, rs = 0.402m ff = form factor (normally unity for fast diode applications) WAV = T Rth T = T j ( MAX ) − THs 6.2 Calculation of VF using ABCD Coefficients The forward characteristic IF Vs VF, on Fig. 1 is represented in two ways; (i) the well established V0 and rs tangent used for rating purposes and (ii) a set of constants A, B, C, and D forming the coefficients of the representative equation for V F in terms of IF given below: VF = A + B  ln( I F ) + C  I F + D  I F The constants, derived by curve fitting software, are given in this report for hot characteristics. The resulting values for VF agree with the true device characteristic over a current range, which is limited to that plotted. A B C D 25°C Coefficients 0.613793358 0.08838485 1.86534×10-4 0.01669329 Data Sheet. Types M2325HA400 and M2325HA450 Issue A1 Page 5 of 12 150°C Coefficients 0.130022348 0.1168203 2.23322×10-4 0.01995332 November, 2019 Fast Recovery Diode Types M2325HA400-450 Curves Figure 1 – Forward characteristics of Limit device Figure 2 – Maximum forward recovery voltage M2325HA400-450 Issue A1 Figure 3 - Recovered charge, Qrr M2325HA400-450 Issue A1 Figure 4 - Recovered charge, Qra (50% chord) M2325HA400-450 Issue A1 M2325HA400-450 Issue A1 Data Sheet. Types M2325HA400 and M2325HA450 Issue A1 Page 6 of 12 November, 2019 Fast Recovery Diode Types M2325HA400-450 Figure 5 - Maximum reverse current, Irm Figure 6 - Maximum recovery time, trr (50% chord) M2325HA400-450 Issue A1 Figure 7 – Reverse recovery energy per pulse M2325HA400-450 Issue A1 Figure 8 - Sine wave energy per pulse M2325HA400-450 Issue A1 M2325HA400-450 Issue A1 Data Sheet. Types M2325HA400 and M2325HA450 Issue A1 Page 7 of 12 November, 2019 Fast Recovery Diode Types M2325HA400-450 Figure 9 - Sine wave frequency vs. pulse width Figure 10 - Sine wave frequency vs. pulse width M2325HA400-450 Issue A1 M2325HA400-450 Issue A1 Figure 11 - Square wave frequency vs pulse width Figure 12 - Square wave frequency vs pulse width M2325HA400-450 Issue A1 Data Sheet. Types M2325HA400 and M2325HA450 Issue A1 M2325HA400-450 Issue A1 Page 8 of 12 November, 2019 Fast Recovery Diode Types M2325HA400-450 Figure 13 - Square wave frequency vs pulse width Figure 14 - Square wave frequency vs pulse width M2325HA400-450 Issue A1 M2325HA400-450 Issue A1 Figure 15 - Square wave energy per pulse Figure 16 - Square wave energy per pulse M2325HA400-450 Issue A1 M2325HA400-450 Issue A1 Data Sheet. Types M2325HA400 and M2325HA450 Issue A1 Page 9 of 12 November, 2019 Fast Recovery Diode Types M2325HA400-450 Figure 17 – Maximum surge and I2t ratings M2325HA400-450 Issue A1 Figure 18 – Transient thermal impedance M2325HA400-450 Issue A1 Data Sheet. Types M2325HA400 and M2325HA450 Issue A1 Page 10 of 12 November, 2019 Fast Recovery Diode Types M2325HA400-450 Outline Drawing & Ordering Information ORDERING INFORMATION HA ⧫⧫ 0 Outline code HA=26.5mm height Voltage code VDRM/100 40 & 45 Fixed code M2325 Fixed Type Code (Please quote 10 digit code as below) Order code: M1583VF450 – 4500V VRRM, 26.5mm clamp height capsule. IXYS Semiconductor GmbH Edisonstraße 15 D-68623 Lampertheim Tel: +49 6206 503-0 Fax: +49 6206 503-627 E-mail: marcom@ixys.de IXYS UK Westcode Ltd Langley Park Way, Langley Park, Chippenham, Wiltshire, SN15 1GE. Tel: +44 (0)1249 444524 IXYS Corporation 3540 Bassett Street Santa Clara CA 95054 USA Tel: +1 (408) 982 0700 Fax: +1 (408) 496 0670 E-mail: sales@ixys.net IXYS Long Beach Inc 2500 Mira Mar Ave, Long Beach CA 90815 Tel: +1 (562) 296 6584 Fax: +1 (562) 296 6585 E-mail:service@ixyslongbeach.com www.littelfuse.com www.ixysuk.com www.ixys.com The information contained herein is confidential and is protected by Copyright. The information may not be used or disclosed except with the written permission of and in the manner permitted by the proprietors IXYS UK Westcode Ltd. © Westcode Semiconductors Ltd. In the interest of product improvement, IXYS UK Westcode reserves the right to change specifications at any time without prior notice. Devices with a suffix code (2-letter, 3-letter or letter/digit/letter combination) added to their generic code are not necessarily subject to the conditions and limits contained in this report. Data Sheet. Types M2325HA400 and M2325HA450 Issue A1 Page 11 of 12 November, 2019 Fast Recovery Diode Types M2325HA400-450 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. Data Sheet. Types M2325HA400 and M2325HA450 Issue A1 Page 12 of 12 November, 2019