MCC162-18IO1

MCC 162 MCD 162 Thyristor Modules Thyristor/Diode Modules ITRMS = 2x 300 A ITAVM = 2x 190 A VRRM = 800-1800 V 67 5 4 VRSM VDSM V 900 1300 1500 1700 1900 VRRM VDRM V 800 1200 1400 1600 1800 Type 1 3 2 Version 1 MCC 162-08io1 MCC 162-12io1 MCC 162-14io1 MCC 162-16io1 MCC 162-18io1 Version 1 MCD 162-08io1 MCD 162-12io1 MCD 162-14io1 MCD 162-16io1 MCD 162-18io1 3 671 542 Symbol ITRMS, IFRMS ITAVM, IFAVM ITSM, IFSM Test Conditions TVJ = TVJM TC = 80°C; 180° sine TC = 85°C; 180° sine TVJ = 45°C; VR = 0 TVJ = TVJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine Maximum Ratings 300 190 181 6000 6400 5250 5600 180 000 170 000 137 000 128 000 150 A A A A A A A A2s A2s A2s A2s A/ms A/ms V/ms W W W V °C °C °C V~ V~ MCC 3 1 5 42 MCD òi2dt TVJ = 45°C VR = 0 TVJ = TVJM VR = 0 (di/dt)cr TVJ = TVJM repetitive, IT = 500 A f =50 Hz, tP =200 ms VD = 2/3 VDRM IG = 0.5 A non repetitive, IT = 500 A diG/dt = 0.5 A/ms TVJ = TVJM; VDR = 2/3 VDRM RGK = ¥; method 1 (linear voltage rise) TVJ = TVJM IT = ITAVM tP = 30 ms tP = 500 ms 500 1000 120 60 8 10 -40...+125 125 -40...+125 Features International standard package Direct copper bonded Al2O3 -ceramic base plate Planar passivated chips Isolation voltage 3600 V~ UL registered, E 72873 Keyed gate/cathode twin pins q q q q q q (dv/dt)cr PGM PGAV VRGM TVJ TVJM Tstg VISOL Md Weight Applications Motor control Power converter Heat and temperature control for industrial furnaces and chemical processes Lighting control Contactless switches q q q q q q q q 50/60 Hz, RMS IISOL £ 1 mA t = 1 min t=1s 3000 3600 Mounting torque (M6) Terminal connection torque (M6) Typical including screws 2.25-2.75/20-25 Nm/lb.in. 4.5-5.5/40-48 Nm/lb.in. 125 g q Advantages Space and weight savings Simple mounting Improved temperature and power cycling Reduced protection circuits Data according to IEC 60747 and refer to a single thyristor/diode unless otherwise stated. IXYS reserves the right to change limits, test conditions and dimensions © 2000 IXYS All rights reserved 1-4 MCC 162 MCD 162 Symbol IRRM, IDRM VT, VF VT0 rT VGT IGT VGD IGD IL IH tgd tq QS IRM RthJC RthJK dS dA a Test Conditions TVJ = TVJM; VR = VRRM; VD = VDRM IT, IF = 300 A; TVJ = 25°C For power-loss calculations only (TVJ = 125°C) VD = 6 V; VD = 6 V; TVJ = TVJM; TVJ = 25°C TVJ = -40°C TVJ = 25°C TVJ = -40°C VD = 2/3 VDRM Characteristic Values 10 1.25 0.88 1.15 2.5 2.6 150 200 0.2 10 300 200 2 150 550 235 0.155 0.0775 0.225 0.1125 12.7 9.6 50 mA V V mW V V mA mA V mA mA mA ms ms mC A K/W K/W K/W K/W mm mm m/s2 Fig. 1 Gate trigger characteristics TVJ = 25°C; tP = 30 ms; VD = 6 V IG = 0.5 A; diG/dt = 0.5 A/ms TVJ = 25°C; VD = 6 V; RGK = ¥ TVJ = 25°C; VD = 1/2 VDRM IG = 0.5 A; diG/dt = 0.5 A/ms TVJ = TVJM; IT = 300 A, tP = 200 ms; -di/dt = 10 A/ms typ. VR = 100 V; dv/dt = 20 V/ms; VD = 2/3 VDRM TVJ = TVJM; IT, IF = 300 A, -di/dt = 50 A/ms per per per per thyristor/diode; DC current module thyristor/diode; DC current module other values see Fig. 8/9 Creepage distance on surface Strike distance through air Maximum allowable acceleration Optional accessories for modules Keyed gate/cathode twin plugs with wire length = 350 mm, gate = yellow, cathode = red Type ZY 180L (L = Left for pin pair 4/5) UL 758, style 1385, Type ZY 180R (R = right for pin pair 6/7) CSA class 5851, guide 460-1-1 Fig. 2 Gate trigger delay time Dimensions in mm (1 mm = 0.0394") MCC Version 1 MCD Version 1 © 2000 IXYS All rights reserved 2-4 MCC 162 MCD 162 Fig. 3 Surge overload current ITSM, IFSM: Crest value, t: duration Fig. 4 òi2dt versus time (1-10 ms) Fig. 4a Maximum forward current at case temperature Fig. 5 Power dissipation versus onstate current and ambient temperature (per thyristor or diode) Fig. 6 Three phase rectifier bridge: Power dissipation versus direct output current and ambient temperature © 2000 IXYS All rights reserved 3-4 MCC 162 MCD 162 Fig. 7 Three phase AC-controller: Power dissipation versus RMS output current and ambient temperature Fig. 8 Transient thermal impedance junction to case (per thyristor or diode) RthJC for various conduction angles d: d DC 180° 120° 60° 30° RthJC (K/W) 0.155 0.167 0.176 0.197 0.227 Constants for ZthJC calculation: i 1 2 3 Rthi (K/W) 0.0072 0.0188 0.129 ti (s) 0.001 0.08 0.2 Fig. 9 Transient thermal impedance junction to heatsink (per thyristor or diode) RthJK for various conduction angles d: d DC 180° 120° 60° 30° RthJK (K/W) 0.225 0.237 0.246 0.267 0.297 Constants for ZthJK calculation: i 1 2 3 4 Rthi (K/W) 0.0072 0.0188 0.129 0.07 ti (s) 0.001 0.08 0.2 1.0 © 2000 IXYS All rights reserved 4-4