MCC19-08IO1B

MCC19-08io1B Thyristor Module VRRM = 2x 800 V I TAV = 18 A VT = 1.57 V Phase leg Part number MCC19-08io1B Backside: isolated 3 6 7 1 5 4 2 Features / Advantages: Applications: Package: TO-240AA ● Thyristor for line frequency ● Planar passivated chip ● Long-term stability ● Direct Copper Bonded Al2O3-ceramic ● Line rectifying 50/60 Hz ● Softstart AC motor control ● DC Motor control ● Power converter ● AC power control ● Lighting and temperature control ● Isolation Voltage: 4800 V~ ● Industry standard outline ● RoHS compliant ● Soldering pins for PCB mounting ● Base plate: DCB ceramic ● Reduced weight ● Advanced power cycling Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20200701d MCC19-08io1B Ratings Thyristor Conditions Symbol VRSM/DSM Definition max. non-repetitive reverse/forward blocking voltage TVJ = 25°C VRRM/DRM max. repetitive reverse/forward blocking voltage TVJ = 25°C 800 I R/D reverse current, drain current VT forward voltage drop TVJ = 25°C 100 µA 3 mA TVJ = 25°C 1.56 V 2.05 V 1.57 V IT = 40 A IT = 80 A IT = 40 A IT = 80 A I T(RMS) RMS forward current 180° sine VT0 threshold voltage rT slope resistance R thJC thermal resistance junction to case TVJ = 125 °C for power loss calculation only thermal resistance case to heatsink total power dissipation I TSM max. forward surge current value for fusing V TVJ = 125°C TC = 85 °C RthCH max. Unit 900 V VR/D = 800 V average forward current Ptot typ. VR/D = 800 V I TAV I²t min. 2.29 V T VJ = 125 °C 18 A 28 A TVJ = 125 °C 0.85 V 18 mΩ 1.3 K/W 0.2 K/W TC = 25°C 77 W t = 10 ms; (50 Hz), sine TVJ = 45°C 400 A t = 8,3 ms; (60 Hz), sine VR = 0 V 430 A t = 10 ms; (50 Hz), sine TVJ = 125 °C 340 A t = 8,3 ms; (60 Hz), sine VR = 0 V 365 A t = 10 ms; (50 Hz), sine TVJ = 45°C 800 A²s t = 8,3 ms; (60 Hz), sine VR = 0 V 770 A²s t = 10 ms; (50 Hz), sine TVJ = 125 °C 580 A²s 555 A²s t = 8,3 ms; (60 Hz), sine VR = 0 V CJ junction capacitance VR = 400 V f = 1 MHz TVJ = 25°C PGM max. gate power dissipation t P = 30 µs T C = 125 °C 22 t P = 300 µs pF 10 W 5 W 0.5 W PGAV average gate power dissipation (di/dt) cr critical rate of rise of current TVJ = 125 °C; f = 50 Hz repetitive, IT = t P = 200 µs; di G /dt = 0.45 A/µs; 45 A I G = 0.45 A; V = ⅔ VDRM 18 A (dv/dt)cr critical rate of rise of voltage V = ⅔ VDRM VGT gate trigger voltage VD = 6 V TVJ = 25 °C TVJ = -40 °C 1.6 V I GT gate trigger current VD = 6 V TVJ = 25 °C 100 mA TVJ = -40 °C 200 mA VGD gate non-trigger voltage TVJ = 125°C 0.2 V I GD gate non-trigger current 5 mA IL latching current TVJ = 25 °C 450 mA non-repet., I T = 150 A/µs 500 A/µs 1000 V/µs TVJ = 125°C R GK = ∞; method 1 (linear voltage rise) VD = ⅔ VDRM tp = 10 µs 1.5 V IG = 0.45 A; di G /dt = 0.45 A/µs IH holding current VD = 6 V R GK = ∞ TVJ = 25 °C 200 mA t gd gate controlled delay time VD = ½ VDRM TVJ = 25 °C 2 µs tq turn-off time IG = 0.45 A; di G /dt = 0.45 A/µs VR = 100 V; I T = 20A; V = ⅔ VDRM TVJ =100 °C di/dt = 10 A/µs dv/dt = IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved 150 µs 20 V/µs t p = 200 µs Data according to IEC 60747and per semiconductor unless otherwise specified 20200701d MCC19-08io1B Package Ratings TO-240AA Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -40 typ. max. 200 Unit A -40 125 °C -40 100 °C 125 °C 81 Weight g MD mounting torque 2.5 4 Nm MT terminal torque 2.5 4 Nm d Spp/App creepage distance on surface | striking distance through air d Spb/Apb VISOL t = 1 minute Ordering Number MCC19-08io1B Similar Part MCMA25P1200TA MCMA35P1200TA Equivalent Circuits for Simulation I V0 13.0 16.0 t = 1 second isolation voltage Ordering Standard terminal to terminal terminal to backside R0 50/60 Hz, RMS; IISOL ≤ 1 mA Marking on Product MCC19-08io1B Package TO-240AA-1B TO-240AA-1B * on die level Delivery Mode Box mm 16.0 mm 4800 V 4000 V Quantity 36 Code No. 452807 Voltage class 1200 1200 T VJ = 125°C Thyristor V 0 max threshold voltage 0.85 V R0 max slope resistance * 16.8 mΩ IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved 9.7 Data according to IEC 60747and per semiconductor unless otherwise specified 20200701d MCC19-08io1B Outlines TO-240AA 3 IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved 6 7 1 5 4 2 Data according to IEC 60747and per semiconductor unless otherwise specified 20200701d MCC19-08io1B Thyristor 50 103 500 VR = 0 V DC 180° sin 120° 60° 30° 50 HZ, 80% VRRM 40 TVJ = 45°C 400 TVJ = 125°C ITSM 300 2 It ITAVM [A2s] [A] TVJ = 45°C [A] 30 20 200 TVJ = 125°C 10 100 102 0 10-3 10 -2 10-1 100 0 1 101 2 3 t [s] 6 8 10 0 50 Fig. 1 Surge overload current ITSM: Crest value, t: duration 150 Fig. 3 Max. forward current at case temperature Fig. 2 I2t versus time (1-10 ms) 80 100 TC [°C] t [ms] RthJA 10 [KW] 1: IGT, TVJ = 125°C 2: IGT, TVJ = 25°C 3: IGT, TVJ = -40°C 1.5 2 60 2.5 3 PT VG 4 40 [W] 2 1 5 [V] 3 5 4 6 DC 180° sin 120° 60° 30° 20 8 4: PGAV = 0.5 W 5: PGM = 5 W 6: PGM = 10 W IGD, TVJ = 125°C 0.1 100 0 0 10 20 30 40 6 1 0 50 100 150 101 TA [°C] ITAVM [A] Fig. 4 Power dissipation versus onstate current & ambient temp. (per thyristor) 300 102 103 104 IG [mA] RthJA Fig. 5 Gate trigger charact. 1000 [KW] TVJ = 25°C 0.1 250 0.15 tgd 0.2 200 100 0.25 Ptot typ. Limit [µs] 0.3 150 0.4 [W] 0.5 100 10 0.6 Circuit B6 3x MCC19 20 0 0 20 40 60 IdAVM [A] 0 50 100 TA [°C] Fig. 6 Three phase rectifier bridge: Power dissipation versus direct output current and ambient temperature IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved 150 1 10 100 1000 IG [mA] Fig. 7 Gate trigger delay time Data according to IEC 60747and per semiconductor unless otherwise specified 20200701d MCC19-08io1B Thyristor 400 RthJA [KW] 0.1 0.15 300 0.2 0.25 Ptot 0.3 200 0.4 [W] 0.5 Circuit W3 3x MCC19 100 0.6 0 0 10 20 30 40 50 0 50 IRMS [A] 100 150 TA [°C] Fig. 8 Three phase AC-controller: Power dissipation vs. RMS output current and ambient temperature 15 RthJC for various conduction angles d: d RthJC [K/W] 30° 60° 10 120° DC 1.30 180° 180° 1.35 DC 120° 1.39 60° 1.42 30° 1.45 ZthJC [K/W] Constants for ZthJC calculation: 5 i Rthi [K/W] 0 10-3 10-2 10-1 100 101 102 ti [s] 1 0.018 0.0033 2 0.041 0.0216 3 1.241 0.1910 103 t [s] Fig. 9 Transient thermal impedance junction to case (per thyristor) 20 RthJK for various conduction angles d: d RthJK [K/W] DC 1.50 180° 1.55 120° 1.59 60° 1.62 30° 1.65 30° 60° 120° 15 180° DC ZthJK 10 [K/W] Constants for ZthJK calculation: i Rthi [K/W] 5 0 10-3 1 2 3 4 10-2 10-1 100 101 102 0.018 0.041 1.241 0.200 ti [s] 0.0033 0.0216 0.1910 0.4600 103 t [s] Fig. 10 Transient thermal impedance junction to heatsink (per thyristor) IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20200701d