MCC21-16IO8B

MCC21-16io8B Thyristor Module VRRM = 2x 1600 V I TAV = 21 A VT = 1.52 V Phase leg Part number MCC21-16io8B Backside: isolated 3 6 1 5 2 Features / Advantages: Applications: Package: TO-240AA ● Thyristor for line frequency ● Planar passivated chip ● Long-term stability ● Direct Copper Bonded Al2O3-ceramic ● Line rectifying 50/60 Hz ● Softstart AC motor control ● DC Motor control ● Power converter ● AC power control ● Lighting and temperature control ● Isolation Voltage: 4800 V~ ● Industry standard outline ● RoHS compliant ● Soldering pins for PCB mounting ● Base plate: DCB ceramic ● Reduced weight ● Advanced power cycling Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20200701e MCC21-16io8B Ratings Thyristor Conditions Symbol VRSM/DSM Definition max. non-repetitive reverse/forward blocking voltage TVJ = 25°C VRRM/DRM max. repetitive reverse/forward blocking voltage TVJ = 25°C 1600 I R/D reverse current, drain current VT forward voltage drop TVJ = 25°C 100 µA 5 mA TVJ = 25°C 1.45 V 1.89 V 1.52 V IT = 45 A IT = 90 A IT = 45 A IT = 90 A I T(RMS) RMS forward current 180° sine VT0 threshold voltage rT slope resistance R thJC thermal resistance junction to case TVJ = 125 °C for power loss calculation only thermal resistance case to heatsink total power dissipation I TSM max. forward surge current value for fusing V TVJ = 125°C TC = 85 °C RthCH max. Unit 1700 V VR/D = 1600 V average forward current Ptot typ. VR/D = 1600 V I TAV I²t min. 2.20 V T VJ = 125 °C 21 A 33 A TVJ = 125 °C 0.85 V 15 mΩ 1.1 K/W 0.2 K/W TC = 25°C 90 W t = 10 ms; (50 Hz), sine TVJ = 45°C 320 A t = 8,3 ms; (60 Hz), sine VR = 0 V 345 A t = 10 ms; (50 Hz), sine TVJ = 125 °C 270 A t = 8,3 ms; (60 Hz), sine VR = 0 V 295 A t = 10 ms; (50 Hz), sine TVJ = 45°C 510 A²s t = 8,3 ms; (60 Hz), sine VR = 0 V 495 A²s t = 10 ms; (50 Hz), sine TVJ = 125 °C 365 A²s 360 A²s t = 8,3 ms; (60 Hz), sine VR = 0 V CJ junction capacitance VR = 400 V f = 1 MHz TVJ = 25°C PGM max. gate power dissipation t P = 30 µs T C = 125 °C 22 t P = 300 µs pF 10 W 5 W 0.5 W PGAV average gate power dissipation (di/dt) cr critical rate of rise of current TVJ = 125 °C; f = 50 Hz repetitive, IT = t P = 200 µs; di G /dt = 0.45 A/µs; 45 A I G = 0.45 A; V = ⅔ VDRM 21 A (dv/dt)cr critical rate of rise of voltage V = ⅔ VDRM VGT gate trigger voltage VD = 6 V TVJ = 25 °C 1 TVJ = -40 °C 1.2 V I GT gate trigger current VD = 6 V TVJ = 25 °C 65 mA TVJ = -40 °C 80 mA VGD gate non-trigger voltage TVJ = 125°C 0.2 V I GD gate non-trigger current 5 mA IL latching current TVJ = 25 °C 150 mA non-repet., I T = 150 A/µs 500 A/µs 1000 V/µs TVJ = 125°C R GK = ∞; method 1 (linear voltage rise) VD = ⅔ VDRM tp = 10 µs IG = 0.3 A; di G /dt = V 0.3 A/µs IH holding current VD = 6 V R GK = ∞ TVJ = 25 °C 100 mA t gd gate controlled delay time VD = ½ VDRM TVJ = 25 °C 2 µs tq turn-off time IG = 0.3 A; di G /dt = VR = 100 V; I T = 0.3 A/µs 15A; V = ⅔ VDRM TVJ =100 °C di/dt = 10 A/µs dv/dt = IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved 150 µs 20 V/µs t p = 300 µs Data according to IEC 60747and per semiconductor unless otherwise specified 20200701e MCC21-16io8B Package Ratings TO-240AA Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -40 typ. max. 200 Unit A -40 125 °C -40 100 °C 125 °C 81 Weight g MD mounting torque 2.5 4 Nm MT terminal torque 2.5 4 Nm d Spp/App creepage distance on surface | striking distance through air d Spb/Apb VISOL t = 1 minute Ordering Number MCC21-16io8B Similar Part MCMA25P1600TA MCMA35P1600TA Equivalent Circuits for Simulation I V0 13.0 16.0 t = 1 second isolation voltage Ordering Standard terminal to terminal terminal to backside R0 50/60 Hz, RMS; IISOL ≤ 1 mA Marking on Product MCC21-16io8B Package TO-240AA-1B TO-240AA-1B * on die level Delivery Mode Box mm 16.0 mm 4800 V 4000 V Quantity 36 Code No. 477338 Voltage class 1600 1600 T VJ = 125°C Thyristor V 0 max threshold voltage 0.85 V R0 max slope resistance * 13.8 mΩ IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved 9.7 Data according to IEC 60747and per semiconductor unless otherwise specified 20200701e MCC21-16io8B Outlines TO-240AA 3 IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved 6 1 5 2 Data according to IEC 60747and per semiconductor unless otherwise specified 20200701e MCC21-16io8B Thyristor 102 10 PGM = 10 W; tP = 30 µs PGM = 1 W; tP = 300 µs PGAV = 0.5 W lim. 101 VG tgd 1 [V] [µs] typ. 0 10 -40°C 25°C (upper 125°C limit) 0 0.1 125°C 25°C (lower limit) 1 10 100 1000 10000 IG [mA] Fig. 1 Gate trigger characteristics IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved 10-1 10-2 10-1 100 101 IG [A] Fig. 2 Gate trigger delay time Data according to IEC 60747and per semiconductor unless otherwise specified 20200701e