MCC224-20IO1

MCC224-20io1 High Voltage Thyristor Module VRRM = 2x 2000 V I TAV = 250 A VT = 1.03 V Phase leg Part number MCC224-20io1 Backside: isolated 3 6 7 1 5 4 2 Features / Advantages: Applications: Package: Y1 ● Thyristor for line frequency ● Planar passivated chip ● Long-term stability ● Direct Copper Bonded Al2O3-ceramic ● Line rectifying 50/60 Hz ● Softstart AC motor control ● DC Motor control ● Power converter ● AC power control ● Lighting and temperature control ● Isolation Voltage: 3600 V~ ● Industry standard outline ● RoHS compliant ● Soldering pins for PCB mounting ● Base plate: Copper internally DCB isolated ● Advanced power cycling Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20191210i MCC224-20io1 Ratings Thyristor Conditions Symbol VRSM/DSM Definition max. non-repetitive reverse/forward blocking voltage TVJ = 25°C VRRM/DRM max. repetitive reverse/forward blocking voltage TVJ = 25°C I R/D reverse current, drain current VT forward voltage drop min. typ. TVJ = 25°C 1 mA TVJ = 140°C 40 mA I T = 250 A TVJ = 25°C 1.08 V 1.31 V 1.03 V TVJ = 125 °C I T = 500 A I TAV average forward current TC = 85 °C I T(RMS) RMS forward current 180° sine VT0 threshold voltage rT slope resistance R thJC thermal resistance junction to case for power loss calculation only thermal resistance case to heatsink total power dissipation I TSM max. forward surge current I²t value for fusing V VR/D = 2000 V I T = 250 A RthCH 2000 VR/D = 2000 V I T = 500 A Ptot max. Unit 2100 V 1.33 V T VJ = 140 °C 250 A 390 A TVJ = 140 °C 0.72 V 1.2 mΩ 0.139 K/W 0.04 K/W TC = 25°C 820 W t = 10 ms; (50 Hz), sine TVJ = 45°C 8.00 kA t = 8,3 ms; (60 Hz), sine VR = 0 V 8.64 kA t = 10 ms; (50 Hz), sine TVJ = 140 °C 6.80 kA t = 8,3 ms; (60 Hz), sine VR = 0 V 7.35 kA t = 10 ms; (50 Hz), sine TVJ = 45°C 320.0 kA²s t = 8,3 ms; (60 Hz), sine VR = 0 V 310.5 kA²s t = 10 ms; (50 Hz), sine TVJ = 140 °C 231.2 kA²s t = 8,3 ms; (60 Hz), sine VR = 0 V CJ junction capacitance VR = 700 V f = 1 MHz TVJ = 25°C PGM max. gate power dissipation t P = 30 µs T C = 140 °C 224.4 kA²s 235 t P = 500 µs pF 120 W 60 W 20 W PGAV average gate power dissipation (di/dt) cr critical rate of rise of current TVJ = 125 °C; f = 50 Hz repetitive, IT = 750 A t P = 200 µs; di G /dt = 1 A/µs; (dv/dt)cr critical rate of rise of voltage V = ⅔ VDRM VGT gate trigger voltage VD = 6 V TVJ = 25 °C TVJ = -40 °C 3 V I GT gate trigger current VD = 6 V TVJ = 25 °C 150 mA TVJ = -40 °C 220 mA VGD gate non-trigger voltage TVJ = 140°C 0.25 V I GD gate non-trigger current 10 mA IL latching current TVJ = 25 °C 200 mA IG = 1 A; V = ⅔ VDRM 100 A/µs non-repet., I T = 250 A 500 A/µs 1000 V/µs TVJ = 125°C R GK = ∞; method 1 (linear voltage rise) VD = ⅔ VDRM tp = 30 µs 2 V IG = 0.45 A; di G /dt = 0.45 A/µs IH holding current VD = 6 V R GK = ∞ TVJ = 25 °C 150 mA t gd gate controlled delay time VD = ½ VDRM TVJ = 25 °C 2 µs tq turn-off time IG = 0.5 A; di G /dt = 0.5 A/µs VR = 100 V; I T = 250A; V = ⅔ VDRM TVJ =125 °C di/dt = 10 A/µs dv/dt = IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved 350 µs 50 V/µs t p = 200 µs Data according to IEC 60747and per semiconductor unless otherwise specified 20191210i MCC224-20io1 Package Ratings Y1 Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -40 typ. max. 600 Unit A -40 140 °C -40 125 °C 125 °C 680 Weight g MD mounting torque 4.5 7 Nm MT terminal torque 11 13 Nm d Spp/App terminal to terminal creepage distance on surface | striking distance through air terminal to backside d Spb/Apb VISOL t = 1 second isolation voltage t = 1 minute Production Index (PI) Date Code (DC) 50/60 Hz, RMS; IISOL ≤ 1 mA 16.0 mm 16.0 mm 3600 V 3000 V Circuit yywwAA Part Number Lot.No: xxxxxx Data Matrix: part no. (1-19), DC + PI (20-25), lot.no.# (26-31), blank (32), serial no.# (33-36) Ordering Standard Ordering Number MCC224-20io1 Equivalent Circuits for Simulation I V0 R0 Marking on Product MCC224-20io1 * on die level Delivery Mode Box Code No. 463523 T VJ = 140°C Thyristor V 0 max threshold voltage 0.72 V R0 max slope resistance * 1.01 mΩ IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Quantity 3 Data according to IEC 60747and per semiconductor unless otherwise specified 20191210i MCC224-20io1 Outlines Y1 3x M8 43 45 10 32 +0 -1,9 52 +0 -1,4 49 2 15 ±1 2.8 x 0.8 22.5 35 28.5 2 5 1 38 50 45 67 18 20 3 6.2 80 92 115 Optional accessories for modules Keyed gate/cathode twin plugs with wire length = 350 mm, gate = white, cathode = red Type ZY 180L (L = Left for pin pair 4/5) UL 758, style 3751 Type ZY 180R (R = Right for pin pair 6/7) 3 IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved 6 7 1 5 4 2 Data according to IEC 60747and per semiconductor unless otherwise specified 20191210i MCC224-20io1 Thyristor 8000 400 106 V R = 0V 50 Hz 80% V 350 RRM T VJ = 45 C 6000 DC 180 sin 120 60 30 300 T VJ = 130 C ITSM IFSM ITAVM I2t 105 4000 250 200 [A] [A] 150 [A2s] 2000 100 50 0 0.001 104 0.01 0.1 0 1 1 t [s] Fig. 1 Surge overload current IT(F)SM: crest value, t: duration 2 3 4 5 6 7 8 10 0 50 100 300 6 VG DC 180 sin 120 60 30 200 5 3 1 4 2 [V] 4: PGM = 20 W 5: PGM = 60 W 6: PGM = 120 W 100 IGD , TVJ = 130°C 0.1 10-3 0 0 100 200 300 0 25 50 75 100 125 150 TA [°C] ITAVM, IFAVM [A] Fig. 4 Power dissipation versus onstate current and• ambient temperature (per thyristor/diode) 10-2 10-1 100 100 102 TVJ = 25°C RthK A K/W 0.03 0.05 0.08 0.1 0.15 0.2 0.3 1500 101 Fig. 5 Gate trigger characteristics 2000 [W] 150 1: IG T , TVJ = 130°C 2: IG T , TVJ = 25°C 3: IG T , TVJ = -40°C 1 PT 125 10 R thK A K/W 0.1 0.2 0.3 0.4 0.6 0.8 1 400 [W] 75 Fig. 3 Max. forward current at case temperature 500 PT 25 TC [°C] t [ms] Fig. 2 I2t versus time (1-10 ms) typ. limit 10 tgd 1000 [µs] Circuit B6 3xMCC224 1 500 0 0 200 400 600 0 IdAVM [A] 25 50 75 100 TA [°C] Fig. 6 Three phase rectifier bridge: Power dissipation versus direct output current and ambient temperature IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved 125 150 0.1 10 0.01 100 0.1 1000 1 10000 10 IG [A] Fig. 7 Gate trigger delay time Data according to IEC 60747and per semiconductor unless otherwise specified 20191210i MCC224-20io1 Thyristor 600 2000 RthK A K/W 0.03 0.05 0.08 0.1 0.15 0.2 0.3 1500 Ptot 500 400 300 1000 [W] Circuit W3 3xMCC224 TVJ = 125°C 200 500 100 TVJ = 25°C 0 0 100 200 300 400 500 0 25 50 75 IRMS [A] 100 125 150 1.0 1.5 TA [°C] Fig. 7 Three phase AC-controller: Power dissipation versus RMS output current and ambient temperature Fig. 10 0.25 Forward characteristics RthJC for various conduction angles d: d DC 180°C 120°C 60°C 30°C 0.20 ZthJC 0 0.5 0.15 [K/W] 30 60 120 180 DC 0.10 Constants for ZthJC calculation: 0.05 0.00 10-3 10-2 10-1 t [s] 100 RthJC [K/W] 0.139 0.148 0.156 0.176 0.214 101 102 i Rthi [K/W] 1 0.0067 2 0.0358 3 0.0832 4 0.0129 ti [s] 0.00054 0.098 0.540 12.00 Fig. 8 Transient thermal impedance junction to case (per thyristor/diode) 0.30 RthJK for various conduction angles d: d DC 180°C 120°C 60°C 30°C 0.25 0.20 ZthJK 0.15 [K/W] 30 60 120 180 DC 0.10 0.05 0.00 10-3 10-2 10-1 100 101 RthJK [K/W] 0.179 0.188 0.196 0.216 0.256 Constants for ZthJK calculation: 102 t [s] i Rthi [K/W] 1 0.0067 2 0.0358 3 0.0832 4 0.0129 ti [s] 0.001 0.080 0.200 1.000 Fig. 9 Transient thermal impedance junction to heatsink (per thyristor/diode) IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20191210i