MCD132-14IO1

MCD132-14io1 Thyristor \ Diode Module VRRM = 2x 1400 V I TAV = 130 A VT = 1.08 V Phase leg Part number MCD132-14io1 Backside: isolated 3 1 5 4 2 Features / Advantages: Applications: Package: Y4 ● Thyristor for line frequency ● Planar passivated chip ● Long-term stability ● Direct Copper Bonded Al2O3-ceramic ● Line rectifying 50/60 Hz ● Softstart AC motor control ● DC Motor control ● Power converter ● AC power control ● Lighting and temperature control ● Isolation Voltage: 3600 V~ ● Industry standard outline ● RoHS compliant ● Soldering pins for PCB mounting ● Base plate: DCB ceramic ● Reduced weight ● Advanced power cycling Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20191205c MCD132-14io1 Ratings Rectifier Conditions Symbol VRSM/DSM Definition max. non-repetitive reverse/forward blocking voltage TVJ = 25°C VRRM/DRM max. repetitive reverse/forward blocking voltage TVJ = 25°C 1400 I R/D reverse current, drain current VT forward voltage drop min. typ. VR/D = 1400 V TVJ = 25°C 200 µA TVJ = 125°C 10 mA I T = 150 A TVJ = 25°C 1.14 V 1.36 V 1.08 V TVJ = 125 °C I T = 150 A I T = 300 A I TAV average forward current TC = 85 °C I T(RMS) RMS forward current 180° sine VT0 threshold voltage rT slope resistance R thJC thermal resistance junction to case for power loss calculation only RthCH thermal resistance case to heatsink total power dissipation I TSM max. forward surge current I²t value for fusing V VR/D = 1400 V I T = 300 A Ptot max. Unit 1500 V 1.36 V T VJ = 125 °C 130 A 300 A TVJ = 125 °C 0.80 V 1.5 mΩ 0.23 K/W 0.1 K/W TC = 25°C 435 W t = 10 ms; (50 Hz), sine TVJ = 45°C 4.75 kA t = 8,3 ms; (60 Hz), sine VR = 0 V 5.13 kA t = 10 ms; (50 Hz), sine TVJ = 125 °C 4.04 kA t = 8,3 ms; (60 Hz), sine VR = 0 V 4.36 kA t = 10 ms; (50 Hz), sine TVJ = 45°C 112.8 kA²s t = 8,3 ms; (60 Hz), sine VR = 0 V 109.5 kA²s t = 10 ms; (50 Hz), sine TVJ = 125 °C t = 8,3 ms; (60 Hz), sine VR = 0 V CJ junction capacitance VR = 400 V f = 1 MHz TVJ = 25°C PGM max. gate power dissipation t P = 30 µs T C = 125 °C 81.6 kA²s 79.1 kA²s 211 t P = 500 µs pF 120 W 60 W 8 W PGAV average gate power dissipation (di/dt) cr critical rate of rise of current TVJ = 125 °C; f = 50 Hz repetitive, IT = 500 A t P = 200 µs; di G /dt = 0.5 A/µs; (dv/dt)cr critical rate of rise of voltage V = ⅔ VDRM VGT gate trigger voltage VD = 6 V TVJ = 25 °C TVJ = -40 °C 2.6 V I GT gate trigger current VD = 6 V TVJ = 25 °C 150 mA TVJ = -40 °C 200 mA VGD gate non-trigger voltage TVJ = 125°C 0.2 V I GD gate non-trigger current 10 mA IL latching current TVJ = 25 °C 300 mA IG = 0.5 A; V = ⅔ VDRM 150 A/µs non-repet., I T = 160 A 500 A/µs 1000 V/µs TVJ = 125°C R GK = ∞; method 1 (linear voltage rise) VD = ⅔ VDRM tp = 30 µs IG = 0.5 A; di G /dt = 2.5 V 0.5 A/µs IH holding current VD = 6 V R GK = ∞ TVJ = 25 °C 200 mA t gd gate controlled delay time VD = ½ VDRM TVJ = 25 °C 2 µs tq turn-off time IG = 0.5 A; di G /dt = 0.5 A/µs VR = 100 V; I T = 160A; V = ⅔ VDRM TVJ =100 °C di/dt = 10 A/µs dv/dt = IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved 150 µs 20 V/µs t p = 200 µs Data according to IEC 60747and per semiconductor unless otherwise specified 20191205c MCD132-14io1 Package Ratings Y4 Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -40 max. 300 Unit A -40 125 °C -40 100 °C 125 °C 150 Weight MD mounting torque MT terminal torque d Spp/App creepage distance on surface | striking distance through air d Spb/Apb VISOL typ. 14.0 16.0 t = 1 second isolation voltage t = 1 minute Date Code (DC) + Production Index (PI) terminal to terminal terminal to backside 50/60 Hz, RMS; IISOL ≤ 1 mA g 2.25 2.75 Nm 4.5 5.5 Nm 10.0 mm 16.0 mm 3600 V 3000 V Circuit yywwAA Part Number Lot.No: xxxxxx Data Matrix: part no. (1-19), DC + PI (20-25), lot.no.# (26-31), blank (32), serial no.# (33-36) Ordering Standard Ordering Number MCD132-14io1 Equivalent Circuits for Simulation I V0 R0 Marking on Product MCD132-14io1 * on die level Delivery Mode Box Code No. 430617 T VJ = 125°C Thyristor V 0 max threshold voltage 0.8 V R0 max slope resistance * 0.8 mΩ IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Quantity 6 Data according to IEC 60747and per semiconductor unless otherwise specified 20191205c MCD132-14io1 Outlines Y4 3 IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved 1 5 4 2 Data according to IEC 60747and per semiconductor unless otherwise specified 20191205c MCD132-14io1 Thyristor 106 4000 320 DC 180° sin 120° 60° 30° 280 3000 240 50 Hz 80% VRRM TVJ = 45°C TVJ = 125°C ITSM 2000 I2dt ITAVM 105 [A] 200 160 [A] TVJ = 45°C [A2s] 120 TVJ = 125°C 1000 80 40 104 0 0.001 0.01 0.1 1 0 1 10 0 75 100 125 150 Fig. 2 I t versus time (1-10 ms) Fig. 3 Max. forward current at case temperature 400 100 RthKA K/W 360 tp = 30 µs tp = 500 µs 0.3 0.4 0.5 0.6 0.8 1.0 1.4 1.8 320 280 Ptot 240 PGM = 120 W 60 W 10 P = 8 W GAV VG DC 180° sin 120° 60° 30° 160 1 125°C 120 [V] 80 40 0 0 50 100 150 200 250 0 25 50 ITAVM [A] 75 100 125 0.1 0.01 150 Ta [°C] IGT (TVJ = -40°C) IGT (TVJ = 0°C) IGT (TVJ = 25°C) 25°C 200 [W] 50 TC [°C] 2 Fig. 1 Surge overload current ITSM, IFSM: Crest value, t: duration 25 t [ms] t [s] IGD 0.1 1 10 IG [A] Fig. 4 Power dissipation vs. on-state current & ambient temperature (per thyristor or diode) Fig. 5 Gate trigger characteristics 100 1400 0.03 0.04 0.06 0.08 0.1 0.15 0.2 0.3 1200 Circuit B6 3xMCC132 or 1000 Ptot [W] TVJ = 25°C RthKA K/W 3x MCD132 800 10 tgd [μs] 600 limit 1 typ. 400 200 0 0 100 200 300 400 500 0 25 IdAVM [A] 50 75 100 125 T a [°C] Fig. 6 Three phase rectifier bridge: Power dissipation versus direct output current and ambient temperature IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved 150 0.1 0.01 0.1 1 10 IG [A] Fig. 7 Gate trigger delay time Data according to IEC 60747and per semiconductor unless otherwise specified 20191205c MCD132-14io1 Rectifier 1600 1200 Ptot RthKA K/W Circuit W3 3xMCC132 or 3xMCD132 0.03 0.04 0.06 0.08 0.1 0.15 0.2 0.3 800 [W] 400 0 0 100 200 300 400 0 25 50 IRMS [A] 75 100 125 150 Ta [°C] Fig. 8 Three phase AC-controller: Power dissipation versus RMS output current and ambient temperature 0.4 RthJC for various conduction angles d: d RthJC [K/W] DC 0.230 180° 0.244 120° 0.255 60° 0.283 30° 0.321 0.3 ZthJC 0.2 30° 60° 120° 180° DC [K/W] 0.1 0.0 10-3 10-2 10-1 100 101 Constants for ZthJC calculation: 102 i Rthi [K/W] 1 0.0095 2 0.0175 3 0.2030 ti [s] 0.001 0.065 0.400 t [s] Fig. 9 Transient thermal impedance junction to case (per thyristor/diode) 0.5 RthJK for various conduction angles d: d RthJK [K/W] DC 0.330 180° 0.344 120° 0.355 60° 0.383 30° 0.421 0.4 0.3 ZthJK 30° 60° 120° 180° DC 0.2 [K/W] 0.1 0.0 10-3 10-2 10-1 100 101 Constants for ZthJK calculation: i Rthi [K/W] 1 0.0095 2 0.0175 3 0.2030 4 0.1000 102 ti [s] 0.001 0.065 0.400 1.290 103 t [s] Fig. 10 Transient thermal impedance junction to heatsink (per thyristor/diode) IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20191205c