MCD161-20IO1

MCC 161 MCD 161 High Voltage Thyristor Module ITRMS = 2x300 A ITAVM = 2x165 A VRRM = 2000-2200 V 6 71 542 2 1 3 67 5 4 VRSM VDSM V 2100 2300 VRRM VDRM V 2000 2200 Type MCC 3 MCC 161-20io1 MCD 161-20io1 MCC 161-22io1 MCD 161-22io1 MCD 3 1 54 2 Symbol ITRMS ITAVM ITSM Conditions TVJ = TVJM TC = 85°C; 180° sine TVJ = 45°C; VR = 0 TVJ = TVJM; VR = 0 t = 10 ms (50 Hz) t = 8.3 ms (60 Hz) t = 10 ms (50 Hz) t = 8.3 ms (60 Hz) t = 10 ms (50 Hz) t = 8.3 ms (60 Hz) t = 10 ms (50 Hz) t = 8.3 ms (60 Hz) Maximum Ratings 300 165 6000 6400 5250 5600 180000 170000 137000 128000 150 A A A A A A A2s A2 s A2s A2 s A/µs Features • International standard package • Direct Copper Bonded Al2O3-ceramic base plate • Planar passivated chips • Isolation voltage 3600 V~ • UL registered, E 72873 • Keyed gate/cathode twin pins Applications • Motor control • Power converter • Heat and temperature control for industrial furnaces and chemical processes • Lighting control • Contactless switches Advantages • Space and weight savings • Simple mounting • Improved temperature and power cycling • Reduced protection circuits I2dt TVJ = 45°C; VR = 0 TVJ = TVJM; VR = 0 (di/dt)cr TVJ = TVJM; repetitive, IT = 500 A f = 50 Hz; tP = 200 µs; VD = 2/3 VDRM; IG = 0.5 A; non repetitive, IT = ITAVM diG/dt = 0.5 A/µs TVJ = TVJM; VDR = 2/3 VDRM RGK = ∞; method 1 (linear voltage rise) TVJ = TVJM; IT = ITAVM; tP = 30 µs tP = 500 µs 500 1000 120 60 8 10 -40...125 125 -40...125 A/µs V/µs W W W V °C °C °C V~ V~ Nm Nm g (dv/dt)cr PGM PGAV VRGM TVJ TVJM Tstg VISOL Md Weight 50/60 Hz, RMS; t = 1 min IISOL < 1 mA; t=1s Mounting torque (M6) Terminal connection torque (M6) Typical including screws 3000 3600 2.25-2.75 4.5-5.5 125 Data according to IEC 60747 and refer to a single thyristor/diode unless otherwise stated IXYS reserves the right to change limits, test conditions and dimensions © 2005 IXYS All rights reserved 1-3 0540 MCC 161 MCD 161 Symbol IRRM, IDRM VT VT0 rT VGT IGT VGD IGD IL IH tgd tq QS IRM RthJC RthJK dS dA a Conditions VR = VRRM; TVJ = TVJM Characteristic Values 40 1.36 0.8 1.6 2 2.6 150 200 0.25 10 200 150 2 typ. 150 550 235 0.155 0.078 0.225 0.113 12.7 9.6 50 mA V V mΩ V V mA mA V mA mA mA µs µs µC A K/W K/W K/W K/W mm mm m/s2 Fig. 1 Gate trigger characteristics IT = 300A; TVJ = 25°C For power-loss calculations only (TVJ = TVJM) VD = 6 V; VD = 6 V; TVJ TVJ TVJ TVJ = 25°C = -40°C = 25°C = -40°C VD = 2/3VDRM; TVJ = TVJM VD = 2/3VDRM; TVJ = TVJM TVJ = 25°C; VD = 6 V; tP = 30 µs diG/dt = 0.45 A/µs; IG = 0.45 A TVJ = 25°C; VD = 6 V; RGK = ∞ TVJ = 25°C; VD = 1/2 VDRM diG/dt = 0.5 A/µs; IG = 0.5 A TVJ = TVJM; VR = 100 V; VD = 2/3VDRM; tP = 200 µs dv/dt = 20 V/µs; IT = 160 A; -di/dt = 10A/µs TVJ = TVJM -di/dt = 50 A/µs; IT = 300 A per thyristor; DC current per module per thyristor; DC current per module Creeping distance on surface Creepage distance in air Maximum allowable acceleration Dimensions in mm (1 mm = 0.0394") Fig. 2 Gate trigger delay time 500 IT, 450 A IF 400 350 300 250 200 150 100 50 0 TVJ = 125°C TVJ = 25°C © 2005 IXYS All rights reserved 2-3 0540 Optional accessories for modules Keyed gate/cathode twin plugs with wire length = 350 mm, gate = yellow, cathode = red Type ZY 180L (L = Left for pin pair 4/5) UL 758, style 1385, Type ZY 180R (R = right for pin pair 6/7) CSA class 5851, guide 460-1-1 0.0 0.5 1.0 1.5 V 2.0 VT, VF Fig 3: Forward current vs. voltage drop per thyristor/diode MCC 161 MCD 161 6000 50 Hz 80% VRRM 5000 A ITSM, 4000 IFSM 3000 TVJ = 125°C 2000 100 1000 TVJ = 125°C 50 104 1 t 1 t s 10 0 0 25 50 75 °C 100 TC 125 It 2 106 350 A 300 DC As 2 ITAVM, 250 I FAVM TVJ = 45°C 105 TVJ = 45°C 200 120° rect 150 60° rect 30° rect 180° sin 0 0.001 0.01 0.1 ms Fig. 4: Surge overload current ITSM, IFSM = f(t) 400 Ptot W 360 320 280 240 200 160 120 80 40 0 0 50 100 150 200 250 A IFAVM, ITAVM 0 25 50 75 DC 180° sin 120° rect 60° rect 30° rect Fig. 5: I2t versus time per diode Fig. 6: Max. forward current at case temperature ITAVM/FAVM = f (TC,d) 2000 RthKA K/W 0.1 0.2 0.3 0.5 0.8 1.5 2 RthKA K/W Ptot W 1800 1600 1400 1200 1000 800 600 400 200 0 0.02 0.04 0.06 0.1 0.15 0.20 0.30 C 100 TA 125 0 100 200 300 400 A 0 IDAVM 25 50 75 C 100 TA 125 Fig. 7: Power dissipation vs. on-state current and ambient temperature (per thyristor/diode) 0.3 K/W Fig. 8: Power dissipation vs. direct output current and ambient temperature (three phase rectifier bridge) RthJC for various condition angles: d DC_ 180° 120° 60° 30° RthJC (K/W) 0.155 0.171 0.184 0.222 0.294 0.2 ZthJC 0.1 30° 60° 120° 180° DC Constants for ZthJC calculation (DC): i 1 2 3 4 5 Rthi (K/W) 0.012 0.008 0.03 0.073 0.032 ti (s) 0.00014 0.019 0.18 0.52 1.6 0.0 10-3 10-2 10-1 100 101 t s 102 Fig. 9: Transient thermal impedance junction to case ZthjC at various conduction angles 0540 © 2005 IXYS All rights reserved 3-3