MCD162-12IO1

MCD162-12io1 Thyristor \ Diode Module VRRM = 2x 1200 V I TAV = 181 A VT = 1.03 V Phase leg Part number MCD162-12io1 Backside: isolated 3 1 5 4 2 Features / Advantages: Applications: Package: Y4 ● Thyristor for line frequency ● Planar passivated chip ● Long-term stability ● Direct Copper Bonded Al2O3-ceramic ● Line rectifying 50/60 Hz ● Softstart AC motor control ● DC Motor control ● Power converter ● AC power control ● Lighting and temperature control ● Isolation Voltage: 3600 V~ ● Industry standard outline ● RoHS compliant ● Soldering pins for PCB mounting ● Base plate: DCB ceramic ● Reduced weight ● Advanced power cycling Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20191209c MCD162-12io1 Ratings Rectifier Conditions Symbol VRSM/DSM Definition max. non-repetitive reverse/forward blocking voltage TVJ = 25°C VRRM/DRM max. repetitive reverse/forward blocking voltage TVJ = 25°C 1200 I R/D reverse current, drain current VT forward voltage drop min. typ. VR/D = 1200 V TVJ = 25°C 300 µA TVJ = 125°C 10 mA I T = 150 A TVJ = 25°C 1.09 V 1.25 V 1.03 V TVJ = 125 °C I T = 150 A I T = 300 A I TAV average forward current TC = 85 °C I T(RMS) RMS forward current 180° sine VT0 threshold voltage rT slope resistance R thJC thermal resistance junction to case for power loss calculation only RthCH thermal resistance case to heatsink total power dissipation I TSM max. forward surge current I²t value for fusing V VR/D = 1200 V I T = 300 A Ptot max. Unit 1300 V 1.25 V T VJ = 125 °C 181 A 300 A TVJ = 125 °C 0.88 V 1.15 mΩ 0.155 K/W 0.07 K/W TC = 25°C 645 W t = 10 ms; (50 Hz), sine TVJ = 45°C 6.00 kA t = 8,3 ms; (60 Hz), sine VR = 0 V 6.48 kA t = 10 ms; (50 Hz), sine TVJ = 125 °C 5.10 kA t = 8,3 ms; (60 Hz), sine VR = 0 V 5.51 kA t = 10 ms; (50 Hz), sine TVJ = 45°C 180.0 kA²s t = 8,3 ms; (60 Hz), sine VR = 0 V 174.7 kA²s t = 10 ms; (50 Hz), sine TVJ = 125 °C 130.1 kA²s t = 8,3 ms; (60 Hz), sine VR = 0 V CJ junction capacitance VR = 400 V f = 1 MHz TVJ = 25°C PGM max. gate power dissipation t P = 30 µs T C = 125 °C 126.3 kA²s 273 t P = 500 µs pF 120 W 60 W 8 W PGAV average gate power dissipation (di/dt) cr critical rate of rise of current TVJ = 125 °C; f = 50 Hz repetitive, IT = 540 A t P = 200 µs; di G /dt = 0.5 A/µs; (dv/dt)cr critical rate of rise of voltage V = ⅔ VDRM VGT gate trigger voltage VD = 6 V TVJ = 25 °C TVJ = -40 °C 2.6 V I GT gate trigger current VD = 6 V TVJ = 25 °C 150 mA TVJ = -40 °C 200 mA VGD gate non-trigger voltage TVJ = 125°C 0.2 V I GD gate non-trigger current 10 mA IL latching current TVJ = 25 °C 300 mA IG = 0.5 A; V = ⅔ VDRM 150 A/µs non-repet., I T = 180 A 500 A/µs 1000 V/µs TVJ = 125°C R GK = ∞; method 1 (linear voltage rise) VD = ⅔ VDRM tp = 30 µs IG = 0.5 A; di G /dt = 2.5 V 0.5 A/µs IH holding current VD = 6 V R GK = ∞ TVJ = 25 °C 200 mA t gd gate controlled delay time VD = ½ VDRM TVJ = 25 °C 2 µs tq turn-off time IG = 0.5 A; di G /dt = 0.5 A/µs VR = 100 V; I T = 300A; V = ⅔ VDRM TVJ =100 °C di/dt = 10 A/µs dv/dt = IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved 150 µs 20 V/µs t p = 200 µs Data according to IEC 60747and per semiconductor unless otherwise specified 20191209c MCD162-12io1 Package Ratings Y4 Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -40 max. 300 Unit A -40 125 °C -40 100 °C 125 °C 150 Weight MD mounting torque MT terminal torque d Spp/App creepage distance on surface | striking distance through air d Spb/Apb VISOL typ. 14.0 16.0 t = 1 second isolation voltage t = 1 minute Date Code (DC) + Production Index (PI) terminal to terminal terminal to backside 50/60 Hz, RMS; IISOL ≤ 1 mA g 2.25 2.75 Nm 4.5 5.5 Nm 10.0 mm 16.0 mm 3600 V 3000 V Circuit yywwAA Part Number Lot.No: xxxxxx Data Matrix: part no. (1-19), DC + PI (20-25), lot.no.# (26-31), blank (32), serial no.# (33-36) Ordering Standard Ordering Number MCD162-12io1 Equivalent Circuits for Simulation I V0 R0 Marking on Product MCD162-12io1 * on die level Delivery Mode Box Code No. 429643 T VJ = 125°C Thyristor V 0 max threshold voltage 0.88 V R0 max slope resistance * 0.8 mΩ IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Quantity 6 Data according to IEC 60747and per semiconductor unless otherwise specified 20191209c MCD162-12io1 Outlines Y4 3 IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved 1 5 4 2 Data according to IEC 60747and per semiconductor unless otherwise specified 20191209c MCD162-12io1 Thyristor 106 5000 320 4000 ITSM DC 180° sin 120° 60° 30° 280 50 Hz 80% VRRM TVJ = 45°C TVJ = 125°C 240 I2dt 3000 [A] 105 2000 ITAVM TVJ = 45°C 160 [A] TVJ = 125°C [A2s] 200 120 80 1000 40 104 0 0.001 0.01 0.1 1 0 1 10 0 75 100 125 150 Fig. 2 I t versus time (1-10 ms) Fig. 3 Max. forward current at case temperature 400 100 RthKA K/W 360 tp = 30 µs tp = 500 µs 0.3 0.4 0.5 0.6 0.8 1.0 1.4 1.8 320 280 Ptot 240 PGM = 120 W 60 W 10 P = 8 W GAV VG DC 180° sin 120° 60° 30° 160 1 125°C 120 [V] 80 40 0 0 50 100 150 200 250 0 25 50 ITAVM [A] 75 100 125 0.1 0.01 150 Ta [°C] IGT (TVJ = -40°C) IGT (TVJ = 0°C) IGT (TVJ = 25°C) 25°C 200 [W] 50 TC [°C] 2 Fig. 1 Surge overload current ITSM, IFSM: Crest value, t: duration 25 t [ms] t [s] IGD 0.1 1 10 IG [A] Fig. 4 Power dissipation vs. on-state current & ambient temperature (per thyristor or diode) Fig. 5 Gate trigger characteristics 100 1400 0.03 0.04 0.06 0.08 0.1 0.15 0.2 0.3 1200 Circuit B6 3xMCC162 or 1000 Ptot [W] TVJ = 25°C RthKA K/W 3x MCD162 800 10 tgd [μs] 600 limit 1 typ. 400 200 0 0 100 200 300 400 500 0 25 IdAVM [A] 50 75 100 125 T a [°C] Fig. 6 Three phase rectifier bridge: Power dissipation versus direct output current and ambient temperature IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved 150 0.1 0.01 0.1 1 10 IG [A] Fig. 7 Gate trigger delay time Data according to IEC 60747and per semiconductor unless otherwise specified 20191209c MCD162-12io1 Rectifier 1600 1200 Ptot RthKA K/W Circuit W3 3xMCC162 or 3xMCD162 0.03 0.04 0.06 0.08 0.1 0.15 0.2 0.3 800 [W] 400 0 0 100 200 300 400 0 25 50 IRMS [A] 75 100 125 150 Ta [°C] Fig. 8 Three phase AC-controller: Power dissipation versus RMS output current and ambient temperature 0.24 RthJC for various conduction angles d: d RthJC [K/W] DC 0.155 180° 0.167 120° 0.176 60° 0.197 30° 0.227 0.16 ZthJC 30° 60° 120° 180° DC [K/W] 0.08 0.00 10-3 10-2 10-1 100 Constants for ZthJC calculation: 101 102 i Rthi [K/W] 1 0.0072 2 0.0188 3 0.1290 ti [s] 0.001 0.080 0.200 t [s] Fig. 9 Transient thermal impedance junction to case (per thyristor/diode) 0.3 RthJK for various conduction angles d: d RthJK [K/W] DC 0.225 180° 0.237 120° 0.246 60° 0.267 30° 0.297 0.2 30° 60° 120° 180° DC ZthJK [K/W] 0.1 0.0 10-3 Constants for ZthJK calculation: i Rthi [K/W] 1 0.0072 2 0.0188 3 0.1290 4 0.0700 10-2 10-1 100 101 ti [s] 0.001 0.080 0.200 1.000 102 t [s] Fig. 10 Transient thermal impedance junction to heatsink (per thyristor/diode) IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20191209c