MCD200-16IO1

MCD200-16io1 Thyristor \ Diode Module VRRM = 2x 1600 V I TAV = 216 A VT = 1.1 V Phase leg Part number MCD200-16io1 Backside: isolated 3 1 5 4 2 Features / Advantages: Applications: Package: Y4 ● Thyristor for line frequency ● Planar passivated chip ● Long-term stability ● Direct Copper Bonded Al2O3-ceramic ● Line rectifying 50/60 Hz ● Softstart AC motor control ● DC Motor control ● Power converter ● AC power control ● Lighting and temperature control ● Isolation Voltage: 3600 V~ ● Industry standard outline ● RoHS compliant ● Soldering pins for PCB mounting ● Base plate: DCB ceramic ● Reduced weight ● Advanced power cycling Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20191209c MCD200-16io1 Ratings Rectifier Conditions Symbol VRSM/DSM Definition max. non-repetitive reverse/forward blocking voltage TVJ = 25°C VRRM/DRM max. repetitive reverse/forward blocking voltage TVJ = 25°C 1600 I R/D reverse current, drain current VT forward voltage drop min. typ. VR/D = 1600 V TVJ = 25°C 400 µA TVJ = 125°C 15 mA I T = 200 A TVJ = 25°C 1.20 V 1.52 V 1.10 V TVJ = 125 °C I T = 200 A I T = 400 A I TAV average forward current TC = 85 °C I T(RMS) RMS forward current 180° sine VT0 threshold voltage rT slope resistance R thJC thermal resistance junction to case for power loss calculation only RthCH thermal resistance case to heatsink total power dissipation I TSM max. forward surge current I²t value for fusing V VR/D = 1600 V I T = 400 A Ptot max. Unit 1700 V 1.50 V T VJ = 125 °C 216 A 340 A TVJ = 125 °C 0.80 V 1.4 mΩ 0.13 K/W 0.05 K/W TC = 25°C 770 W t = 10 ms; (50 Hz), sine TVJ = 45°C 8.00 kA t = 8,3 ms; (60 Hz), sine VR = 0 V 8.64 kA t = 10 ms; (50 Hz), sine TVJ = 125 °C 6.80 kA t = 8,3 ms; (60 Hz), sine VR = 0 V 7.35 kA t = 10 ms; (50 Hz), sine TVJ = 45°C 320.0 kA²s t = 8,3 ms; (60 Hz), sine VR = 0 V 310.5 kA²s t = 10 ms; (50 Hz), sine TVJ = 125 °C 231.2 kA²s t = 8,3 ms; (60 Hz), sine VR = 0 V CJ junction capacitance VR = 400 V f = 1 MHz TVJ = 25°C PGM max. gate power dissipation t P = 30 µs T C = 125 °C 224.4 kA²s 366 t P = 500 µs pF 120 W 60 W 20 W PGAV average gate power dissipation (di/dt) cr critical rate of rise of current TVJ = 125 °C; f = 50 Hz repetitive, IT = 600 A t P = 200 µs; di G /dt = 0.5 A/µs; (dv/dt)cr critical rate of rise of voltage V = ⅔ VDRM VGT gate trigger voltage VD = 6 V TVJ = 25 °C TVJ = -40 °C 3 V I GT gate trigger current VD = 6 V TVJ = 25 °C 150 mA TVJ = -40 °C 220 mA VGD gate non-trigger voltage TVJ = 125°C 0.25 V I GD gate non-trigger current 10 mA IL latching current TVJ = 25 °C 200 mA IG = 0.5 A; V = ⅔ VDRM 100 A/µs non-repet., I T = 200 A 500 A/µs 1000 V/µs TVJ = 125°C R GK = ∞; method 1 (linear voltage rise) VD = ⅔ VDRM tp = 30 µs IG = 0.5 A; di G /dt = 2 V 0.5 A/µs IH holding current VD = 6 V R GK = ∞ TVJ = 25 °C 150 mA t gd gate controlled delay time VD = ½ VDRM TVJ = 25 °C 2 µs tq turn-off time IG = 0.5 A; di G /dt = 0.5 A/µs VR = 100 V; I T = 300A; V = ⅔ VDRM TVJ =100 °C di/dt = 10 A/µs dv/dt = IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved 200 µs 50 V/µs t p = 200 µs Data according to IEC 60747and per semiconductor unless otherwise specified 20191209c MCD200-16io1 Package Ratings Y4 Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -40 max. 300 Unit A -40 125 °C -40 100 °C 125 °C 150 Weight MD mounting torque MT terminal torque d Spp/App creepage distance on surface | striking distance through air d Spb/Apb VISOL typ. 14.0 16.0 t = 1 second isolation voltage t = 1 minute Date Code (DC) + Production Index (PI) terminal to terminal terminal to backside 50/60 Hz, RMS; IISOL ≤ 1 mA g 2.25 2.75 Nm 4.5 5.5 Nm 10.0 mm 16.0 mm 3600 V 3000 V Circuit yywwAA Part Number Lot.No: xxxxxx Data Matrix: part no. (1-19), DC + PI (20-25), lot.no.# (26-31), blank (32), serial no.# (33-36) Ordering Standard Ordering Number MCD200-16io1 Equivalent Circuits for Simulation I V0 R0 Marking on Product MCD200-16io1 * on die level Delivery Mode Box Code No. 498269 T VJ = 125°C Thyristor V 0 max threshold voltage 0.8 V R0 max slope resistance * 0.7 mΩ IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Quantity 6 Data according to IEC 60747and per semiconductor unless otherwise specified 20191209c MCD200-16io1 Outlines Y4 3 IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved 1 5 4 2 Data according to IEC 60747and per semiconductor unless otherwise specified 20191209c MCD200-16io1 Thyristor 106 8000 50 Hz 80% VRRM TVJ = 45°C TVJ = 125°C 6000 ITSM 400 DC 180° sin 120° 60° 30° 300 TVJ = 45°C I2dt ITAVM TVJ = 125°C 105 4000 [A] 200 [A] [A2s] 2000 100 0 0.001 104 0.01 0.1 1 0 1 10 Fig. 1 Surge overload current ITSM, IFSM: Crest value, t: duration 0 Fig. 3 Max. forward current at case temperature 10 1: I , T = 125°C GT VJ 2: IGT, TVJ = 25°C 3: IGT, TVJ = -40°C 0.1 0.2 0.3 0.4 0.6 0.8 1.0 300 Ptot 3 4 1 [V] 0 100 200 300 5 1 IGD, TVJ = 130°C 0 6 2 VG DC 180° sin 120° 60° 30° 100 75 100 125 150 Fig. 2 I2t versus time (1-10 ms) R thKA K/W 200 50 TC [°C] 400 [W] 25 t [ms] t [s] 0 25 50 ITAVM [A] 75 100 125 0.1 10-3 150 Ta [°C] 10-2 10-1 4: PGM = 20 W 5: PGM = 60 W 6: PGM = 120 W 100 101 102 IG [A] Fig. 4 Power dissipation vs. on-state current & ambient temperature (per thyristor or diode) 2000 Fig. 5 Gate trigger characteristics 100 TVJ = 25°C RthKA K/W 0.02 0.04 0.06 0.10 0.15 0.20 0.30 1600 1200 Ptot tgd 10 [ s] [W] 800 limit 400 1 typ. 0 0 200 400 600 0 25 IdAVM [A] 50 75 100 125 T a [°C] Fig. 6 Three phase rectifier bridge: Power dissipation versus direct output current and ambient temperature IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved 150 0.01 0.1 1 10 IG [A] Fig. 7 Gate trigger delay time Data according to IEC 60747and per semiconductor unless otherwise specified 20191209c MCD200-16io1 Rectifier 500 400 IT/F 300 [A] 200 100 0 0.0 0.4 0.8 1.2 1.6 2.0 VT/F [V] Fig. 8 Forward current versus voltage drop 0.3 Constants for ZthJC calculation: i Rthi [K/W] 1 0.0100 2 0.0065 3 0.0250 4 0.0615 5 0.0270 0.2 ZthJC ti [s] 0.00014 0.019 0.180 0.520 1.600 [K/W] 0.1 30° 60° 120° 180° DC 0.0 10-3 10-2 10-1 100 101 102 t [s] Fig. 9 Transient thermal impedance junction to case at various conduction angles 0.4 0.3 ZthJK 0.2 [K/W] 30° 60° 120° 180° DC 0.1 0.0 10-3 10-2 10-1 100 101 102 t [s] Fig. 10 Transient thermal impedance junction to heatsink (per thyristor/diode) IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20191209c