MCD220-08IO1

MCC 220 MCD 220 Thyristor Modules Thyristor/Diode Modules ITRMS = 2x400 A ITAVM = 2x250 A VRRM = 800-1800 V 3 2 76 1 5 4 VRSM VDSM V 900 1300 1500 1700 1900 VRRM VDRM V 800 1200 1400 1600 1800 Type Version 1 MCC MCC MCC MCC MCC 220-08io1 220-12io1 220-14io1 220-16io1 220-18io1 Version 1 MCD MCD MCD MCD MCD 220-08io1 220-12io1 220-14io1 220-16io1 220-18io1 Symbol ITRMS, IFRMS ITAVM, IFAVM ITSM, IFSM Conditions TVJ = TVJM TC = 85°C; 180° sine TVJ = 45°C VR = 0 TVJ = TVJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine Maximum Ratings 400 250 8500 9000 7000 7600 360000 336000 245000 240000 100 A A A A A A A2s A2s A2s A2s A/µs Features MCC 3 671 542 3 1 5 42 ∫i2dt MCD TVJ = 45°C VR = 0 TVJ = TVJM VR = 0 (di/dt)cr TVJ = TVJM; repetitive, IT = 750 A f = 50 Hz; tP = 200 µs VD = 2/3 VDRM IG = 1 A diG/dt = 1 A/µs non repetitive, IT = 250 A 800 1000 120 60 20 10 -40...+140 140 -40...+125 A/µs V/µs W W W V °C °C °C V~ V~ (dv/dt)cr PGM PGAV VRGM TVJ TVJM Tstg VISOL Md Weight TVJ = TVJM; VDR = 2/3 VDRM RGK = ∞; method 1 (linear voltage rise) TVJ = TVJM; IT = ITAVM; tP = 30 µs tP = 500 µs • International standard package • Direct copper bonded Al2O3 -ceramic base plate • Planar passivated chips • Isolation voltage 3600 V~ • UL registered, E 72873 • Keyed gate/cathode twin pins Applications • Motor control • Power converter • Heat and temperature control for industrial furnaces and chemical processes • Lighting control • Contactless switches Advantages • Space and weight savings • Simple mounting • Improved temperature and power cycling • Reduced protection circuits 50/60 Hz, RMS; IISOL ≤ 1 mA; t = 1 min t=1s 3000 3600 Mounting torque (M5) Terminal connection torque (M8) Typical including screws 2.5-5/22-44 Nm/lb.in. 12-15/106-132 Nm/lb.in. 320 g Data according to IEC 60747 and refer to a single thyristor/diode unless otherwise stated. IXYS reserves the right to change limits, test conditions and dimensions © 2004 IXYS All rights reserved 1-4 419 MCC 220 MCD 220 Symbol IRRM IDRM VT, VF VT0 rT VGT IGT VGD IGD IL IH tgd tq QS IRM RthJC RthJK dS dA a Conditions TVJ = TVJM; VR = VRRM; VD = VDRM IT /IF = 600 A; TVJ = 25°C For power-loss calculations only (TVJ = 140°C) VD = 6 V; VD = 6 V; TVJ = TVJM; TVJ TVJ TVJ TVJ = = = = 25°C -40°C 25°C -40°C Characteristic Values 70 40 1.53 0.9 1.0 2 3 150 200 0.25 10 200 150 2 typ. 200 760 275 0.139 0.0695 0.179 0.0895 12.7 9.6 50 mA mA V V mΩ V V mA mA V mA mA mA µs µs µC A K/W K/W K/W K/W mm mm m/s2 Fig. 1 Gate trigger characteristics VD = 2/3 VDRM TVJ = 25°C; tP = 30 µs; VD = 6 V IG = 0.45 A; diG /dt = 0.45 A/µs TVJ = 25°C; VD = 6 V; RGK = ∞ TVJ = 25°C; VD = ½ VDRM IG = 1 A; diG /dt = 1 A/µs TVJ = TVJM; IT = 300 A, tP = 200 µs; -di/dt = 10 A/µs VR = 100 V; dv/dt = 50 V/µs; VD = 2/3 VDRM TVJ = 125°C; IT, IF = 400 A, -di/dt = 50 A/µs per per per per thyristor/diode; DC current module thyristor/diode; DC current module other values see Fig. 8/9 Creepage distance on surface Strike distance through air Maximum allowable acceleration Optional accessories for modules Keyed gate/cathode twin plugs with wire length = 350 mm, gate = yellow, cathode = red Type ZY 180L (L = Left for pin pair 4/5) UL 758, style 1385, Type ZY 180R (R = right for pin pair 6/7) CSA class 5851, guide 460-1-1 Fig. 2 Gate trigger delay time Dimensions in mm (1 mm = 0.0394") MCC MCD Threaded spacer for higher Anode/ Cathode construction: Type ZY 250, material brass 20 12 14 2-4 © 2004 IXYS All rights reserved 419 MCC 220 MCD 220 Fig. 3 Surge overload current ITSM, IFSM: Crest value, t: duration Fig. 4 ∫i2dt versus time (1-10 ms) Fig. 4a Maximum forward current at case temperature Fig. 5 Power dissipation versus onstate current and ambient temperature (per thyristor or diode) Fig. 6 Three phase rectifier bridge: Power dissipation versus direct output current and ambient temperature © 2004 IXYS All rights reserved 3-4 419 MCC 220 MCD 220 Fig. 7 Three phase AC-controller: Power dissipation versus RMS output current and ambient temperature 0.15 K/W 30° DC Fig. 8 Transient thermal impedance junction to case (per thyristor or diode) RthJC for various conduction angles d: d RthJC (K/W) 0.139 0.141 0.142 0.142 0.143 ZthJC 0.10 DC 180°C 120°C 60°C 30°C 0.05 Constants for ZthJC calculation: i 0 0.00 10-3 Rthi (K/W) 0.0037 0.0177 0.1175 ti (s) 0.0099 0.168 0.456 10-2 10-1 100 101 s 102 1 2 3 t 0.20 K/W 30° DC Fig. 9 Transient thermal impedance junction to heatsink (per thyristor or diode) RthJK for various conduction angles d: ZthJK 0.15 d DC 180°C 120°C 60°C 30°C RthJK (K/W) 0.179 0.181 0.182 0.183 0.183 0.10 0.05 Constants for ZthJK calculation: i Rthi (K/W) 0.0037 0.0177 0.1175 0.04 ti (s) 0.0099 0.168 0.456 1.36 419 0 0.00 10-3 10-2 10-1 100 101 s 102 t 1 2 3 4 4-4 © 2004 IXYS All rights reserved