MCD220-16IO1

MCC 220 MCD 220 ITRMS = 2x400 A ITAVM = 2x250 A VRRM = 800-1800 V Thyristor Modules Thyristor/Diode Modules VRSM VDSM VRRM VDRM V V 900 1300 1500 1700 1900 800 1200 1400 1600 1800 3 Type Version 1 Version 1 MCC MCC MCC MCC MCC MCD MCD MCD MCD MCD 220-08io1 220-12io1 220-14io1 220-16io1 220-18io1 Symbol Conditions ITRMS, IFRMS ITAVM, IFAVM TVJ = TVJM TC = 85°C; 180° sine ITSM, IFSM TVJ = 45°C VR = 0 1 Maximum Ratings A A t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 8500 9000 A A TVJ = TVJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 7000 7600 A A TVJ = 45°C VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 360000 336000 A2s A2s TVJ = TVJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 245000 240000 A2s A2s TVJ = TVJM; repetitive, IT = 750 A f = 50 Hz; tP = 200 μs VD = 2/3 VDRM 100 A/μs IG = 1 A diG/dt = 1 A/μs 800 A/μs 1000 V/μs 120 60 W W PGAV 20 W VRGM 10 V TVJ TVJM Tstg -40...+140 140 -40...+125 °C °C °C 3000 3600 V~ V~ (di/dt)cr 5 4 220-08io1 220-12io1 220-14io1 220-16io1 220-18io1 400 250 ∫i2dt 76 2 non repetitive, IT = 250 A (dv/dt)cr TVJ = TVJM; VDR = 2/3 VDRM RGK = ∞; method 1 (linear voltage rise) PGM TVJ = TVJM; IT = ITAVM; tP = 30 μs tP = 500 μs VISOL 50/60 Hz, RMS; IISOL ≤ 1 mA; t = 1 min t=1s Md Mounting torque (M5) Terminal connection torque (M8) Weight Typical including screws 2.5-5/22-44 Nm/lb.in. 12-15/106-132 Nm/lb.in. 320 g 3 6 7 1 5 4 2 3 1 5 4 2 MCC MCD Features • International standard package • Direct copper bonded Al2O3 -ceramic base plate • Planar passivated chips • Isolation voltage 3600 V~ • UL registered, E 72873 • Keyed gate/cathode twin pins Applications • Motor control • Power converter • Heat and temperature control for industrial furnaces and chemical processes • Lighting control • Contactless switches Advantages • Space and weight savings • Simple mounting • Improved temperature and power cycling • Reduced protection circuits 419 Data according to IEC 60747 and refer to a single thyristor/diode unless otherwise stated. IXYS reserves the right to change limits, test conditions and dimensions © 2004 IXYS All rights reserved 1-4 MCC 220 MCD 220 Symbol Conditions Characteristic Values IRRM IDRM TVJ = TVJM; VR = VRRM; VD = VDRM VT, VF IT /IF = 600 A; TVJ = 25°C VT0 rT For power-loss calculations only (TVJ = 140°C) VGT VD = 6 V; IGT VD = 6 V; VGD IGD TVJ = TVJM; IL 70 40 mA mA 1.53 V 0.9 1.0 V mΩ 25°C -40°C 25°C -40°C 2 3 150 200 V V mA mA VD = 2/3 VDRM 0.25 10 V mA TVJ = 25°C; tP = 30 μs; VD = 6 V IG = 0.45 A; diG /dt = 0.45 A/μs 200 mA IH TVJ = 25°C; VD = 6 V; RGK = ∞ 150 mA tgd TVJ = 25°C; VD = ½ VDRM IG = 1 A; diG /dt = 1 A/μs 2 μs tq TVJ = TVJM; IT = 300 A, tP = 200 μs; -di/dt = 10 A/μs VR = 100 V; dv/dt = 50 V/μs; VD = 2/3 VDRM typ. 200 μs QS IRM TVJ = 125°C; IT, IF = 400 A, -di/dt = 50 A/μs 760 275 μC A RthJC per per per per 0.139 0.0695 0.179 0.0895 K/W K/W K/W K/W 12.7 9.6 50 mm mm m/s2 RthJK dS dA a TVJ TVJ TVJ TVJ = = = = thyristor/diode; DC current module thyristor/diode; DC current module Creepage distance on surface Strike distance through air Maximum allowable acceleration other values see Fig. 8/9 Fig. 1 Gate trigger characteristics Optional accessories for modules Keyed gate/cathode twin plugs with wire length = 350 mm, gate = yellow, cathode = red Type ZY 180L (L = Left for pin pair 4/5) UL 758, style 1385, Type ZY 180R (R = right for pin pair 6/7) CSA class 5851, guide 460-1-1 Fig. 2 Gate trigger delay time Dimensions in mm (1 mm = 0.0394") MCC MCD Threaded spacer for higher Anode/ Cathode construction: Type ZY 250, material brass 20 12 419 14 2-4 © 2004 IXYS All rights reserved MCC 220 MCD 220 Fig. 3 Surge overload current ITSM, IFSM: Crest value, t: duration Fig. 4 ∫i2dt versus time (1-10 ms) Fig. 4a Maximum forward current at case temperature Fig. 5 Power dissipation versus onstate current and ambient temperature (per thyristor or diode) 419 Fig. 6 Three phase rectifier bridge: Power dissipation versus direct output current and ambient temperature © 2004 IXYS All rights reserved 3-4 MCC 220 MCD 220 Fig. 7 Three phase AC-controller: Power dissipation versus RMS output current and ambient temperature Fig. 8 Transient thermal impedance junction to case (per thyristor or diode) 0.15 30° DC K/W RthJC for various conduction angles d: ZthJC 0.10 d RthJC (K/W) DC 180°C 120°C 60°C 30°C 0.139 0.141 0.142 0.142 0.143 0.05 Constants for ZthJC calculation: i 0.000 10-3 10-2 10-1 100 101 102 s 1 2 3 Rthi (K/W) ti (s) 0.0037 0.0177 0.1175 0.0099 0.168 0.456 t Fig. 9 Transient thermal impedance junction to heatsink (per thyristor or diode) 0.20 K/W 30° DC RthJK for various conduction angles d: ZthJK 0.15 0.10 d RthJK (K/W) DC 180°C 120°C 60°C 30°C 0.179 0.181 0.182 0.183 0.183 Constants for ZthJK calculation: 0.05 i 0 0.00 10-3 10-2 10-1 100 101 s 102 Rthi (K/W) ti (s) 0.0037 0.0177 0.1175 0.04 0.0099 0.168 0.456 1.36 419 t 1 2 3 4 4-4 © 2004 IXYS All rights reserved