MCD225-12IO1

MCD225-12io1 Thyristor \ Diode Module VRRM = 2x 1200 V I TAV = 220 A VT = 1.18 V Phase leg Part number MCD225-12io1 Backside: isolated 3 1 5 4 2 Features / Advantages: Applications: Package: Y1 ● International standard package ● Direct copper bonded Al2O3-ceramic with copper base plate ● Planar passivated chip ● Keyed gate/cathode twin pins ● Motor control, softstarter ● Power converter ● Heat and temperature control for industrial furnaces and chemical processes ● Lighting control ● Solid state switches ● Isolation Voltage: 3600 V~ ● Industry standard outline ● RoHS compliant ● Soldering pins for PCB mounting ● Base plate: Copper internally DCB isolated ● Advanced power cycling Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20191209f MCD225-12io1 Ratings Rectifier Conditions Symbol VRSM/DSM Definition max. non-repetitive reverse/forward blocking voltage TVJ = 25°C VRRM/DRM max. repetitive reverse/forward blocking voltage TVJ = 25°C I R/D reverse current, drain current VT forward voltage drop min. typ. TVJ = 25°C 1 mA TVJ = 125°C 40 mA I T = 200 A TVJ = 25°C 1.04 V 0.97 V 1.18 V TVJ = 125 °C I T = 400 A I TAV average forward current TC = 85 °C I T(RMS) RMS forward current 180° sine VT0 threshold voltage rT slope resistance R thJC thermal resistance junction to case for power loss calculation only thermal resistance case to heatsink total power dissipation I TSM max. forward surge current I²t value for fusing V VR/D = 1200 V I T = 200 A RthCH 1200 VR/D = 1200 V I T = 400 A Ptot max. Unit 1300 V 1.14 V T VJ = 140 °C 220 A 400 A TVJ = 140 °C 0.79 V 0.83 mΩ 0.157 K/W 0.04 K/W TC = 25°C 730 W t = 10 ms; (50 Hz), sine TVJ = 45°C 8.00 kA t = 8,3 ms; (60 Hz), sine VR = 0 V 8.64 kA t = 10 ms; (50 Hz), sine TVJ = 140 °C 6.80 kA t = 8,3 ms; (60 Hz), sine VR = 0 V 7.35 kA t = 10 ms; (50 Hz), sine TVJ = 45°C 320.0 kA²s t = 8,3 ms; (60 Hz), sine VR = 0 V 310.5 kA²s t = 10 ms; (50 Hz), sine TVJ = 140 °C 231.2 kA²s t = 8,3 ms; (60 Hz), sine VR = 0 V CJ junction capacitance VR = 400 V f = 1 MHz TVJ = 25°C PGM max. gate power dissipation t P = 30 µs T C = 140 °C 224.4 kA²s 366 t P = 500 µs pF 120 W 60 W 20 W PGAV average gate power dissipation (di/dt) cr critical rate of rise of current TVJ = 140 °C; f = 50 Hz repetitive, IT = 660 A t P = 200 µs; di G /dt = 1 A/µs; (dv/dt)cr critical rate of rise of voltage V = ⅔ VDRM VGT gate trigger voltage VD = 6 V TVJ = 25 °C TVJ = -40 °C 3 V I GT gate trigger current VD = 6 V TVJ = 25 °C 150 mA TVJ = -40 °C 220 mA VGD gate non-trigger voltage TVJ = 140°C 0.25 V I GD gate non-trigger current 10 mA IL latching current TVJ = 25 °C 200 mA IG = 1 A; V = ⅔ VDRM 100 A/µs non-repet., I T = 220 A 500 A/µs 1000 V/µs TVJ = 140°C R GK = ∞; method 1 (linear voltage rise) VD = ⅔ VDRM tp = 30 µs 2 V IG = 0.45 A; di G /dt = 0.45 A/µs IH holding current VD = 6 V R GK = ∞ TVJ = 25 °C 150 mA t gd gate controlled delay time VD = ½ VDRM TVJ = 25 °C 2 µs tq turn-off time IG = 1 A; di G /dt = di/dt = 10 A/µs dv/dt = IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved 1 A/µs VR = 100 V; I T = 220A; V = ⅔ VDRM TVJ =125 °C 200 µs 50 V/µs t p = 200 µs Data according to IEC 60747and per semiconductor unless otherwise specified 20191209f MCD225-12io1 Package Ratings Y1 Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -40 typ. max. 600 Unit A -40 140 °C -40 125 °C 125 °C 680 Weight g MD mounting torque 4.5 7 Nm MT terminal torque 11 13 Nm d Spp/App terminal to terminal creepage distance on surface | striking distance through air terminal to backside d Spb/Apb VISOL t = 1 second isolation voltage t = 1 minute Production Index (PI) Date Code (DC) 50/60 Hz, RMS; IISOL ≤ 1 mA 16.0 mm 16.0 mm 3600 V 3000 V Circuit yywwAA Part Number Lot.No: xxxxxx Data Matrix: part no. (1-19), DC + PI (20-25), lot.no.# (26-31), blank (32), serial no.# (33-36) Ordering Standard Ordering Number MCD225-12io1 Equivalent Circuits for Simulation I V0 R0 Marking on Product MCD225-12io1 * on die level Delivery Mode Box Code No. 483966 T VJ = 140°C Thyristor V 0 max threshold voltage 0.79 V R0 max slope resistance * 0.64 mΩ IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Quantity 3 Data according to IEC 60747and per semiconductor unless otherwise specified 20191209f MCD225-12io1 Outlines Y1 3x M8 43 45 10 32 +0 -1,9 52 +0 -1,4 49 2 15 ±1 2.8 x 0.8 28.5 1 2 38 50 35 5 22.5 45 67 18 20 3 6.2 80 92 115 Optional accessories for modules Keyed gate/cathode twin plugs with wire length = 350 mm, gate = white, cathode = red Type ZY 180L (L = Left for pin pair 4/5) U L 758, style 3751 3 IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved 1 5 4 2 Data according to IEC 60747and per semiconductor unless otherwise specified 20191209f MCD225-12io1 Thyristor 106 8000 400 50 Hz 80 % VRRM TVJ = 45°C TVJ = 140°C 6000 DC 180 ° sin 120 ° 60° 30° 300 T VJ = 45 °C ITSM IFSM ITAVM IFAVM 2 I dt T VJ = 140 °C 105 4000 200 2 [A s] [A] [A] 2000 100 0 0.001 104 0.01 0.1 1 0 1 10 t [s] 0 25 50 t [ms] 2 Fig. 1 Surge overload current ITSM/FSM: Crest value, t: duration 10 400 R thKA K/W 0.1 0.2 0.3 0.4 0.6 0.8 1.0 Ptot VG DC 180 ° sin 120 ° 60 ° 30 ° 100 1: IGT, TVJ = 140°C 2: IGT, T4 = 25°C 3: IGT, TVJ = -40°C 6 1 1 200 [W] 100 125 150 Fig. 3 Max. forward current at case temperature Fig. 2 I dt versus time 300 75 TC [°C] 5 3 2 4 [V] 4: PGM = 20 W 5: PGM = 60 W 6: PGM = 120 W IGD, TVJ = 140°C 0 0 100 200 300 0 25 50 ITAVM/FAVM [A] 75 100 125 150 0.1 10-3 10-2 10-1 TA [°C] 100 101 IG [A] Fig. 5 Gate voltage and current Fig. 4 Power dissipation versus on-state current and ambient temperature (per thyristor or diode) 2000 100 TVJ = 25°C R thKA K/W 0.03 0.05 0.08 0.1 0.15 0.2 0.3 1500 Ptot typ. 10 [µs] Circuit B6 3xMCC225 3xMCD225 500 limit tgd 1000 [W] 102 1 0 0 200 400 600 0 25 IdAVM [A] 50 75 100 125 TA [°C] Fig. 6 Three phase rectifier bridge: Power dissipation versus direct output current and ambient temperature IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved 150 0.01 0.1 1 10 IG [A] Fig. 7 Gate trigger characteristics Data according to IEC 60747and per semiconductor unless otherwise specified 20191209f MCD225-12io1 Rectifier 2000 600 R thKA K/W 500 0.03 0.05 0.08 0.1 0.15 0.2 0.3 1500 Ptot 1000 400 IT 300 [A] [W] Circuit W3 3xMCC225 or 3xMCD22 5 500 TVJ = 125°C 200 100 TVJ = 25°C 0 0 100 200 300 400 0 25 50 IRMS [A] 75 100 125 150 0 0.5 1.5 VT [V] Fig. 8 Three phase AC-controller: Power dissipation versus RMS output current and ambient temperature Fig. 9 Forward characteristics 0.25 RthJ C for various conduct. angles d: d DC 180° 120° 60° 30° 0.20 0.15 ZthJC 30 ° 60 ° 120 ° 180 ° DC 0.10 [K/W] 0.05 0.00 10-3 1.0 TA [°C] 10-2 10-1 100 101 RthJ C (K/W) 0.157 0.168 0.177 0.200 0.243 Constants for ZthJ C calculation: i 1 2 3 4 Rthi (K/W) 0.0076 0.0406 0.0944 0.0147 ti (s) 0.00054 0.09800 0.54000 12.0000 102 t [s] Fig. 10 Transient thermal impedance junction to case (per thyristor/diode) RthJ K for various conduct. angles d: 0.30 d DC 180° 120° 60° 30° 0.25 0.20 ZthJK RthJ K (K/W) 0.197 0.208 0.217 0.240 0.283 0.15 [K/W] Constants for ZthJ K calculation: 30 ° 60 ° 120 ° 180 ° DC 0.10 0.05 0.00 10-3 10-2 10-1 100 101 i 1 2 3 4 5 Rthi (K/W) 0.0076 0.0406 0.0944 0.0147 0.0400 ti (s) 0.00054 0.09800 0.54000 12.0000 12.0000 102 t [s] Fig. 11 Transient thermal impedance junction to heatsink (per thyristor/diode) IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20191209f