MCD250-08IO1

MCC 250 MCD 250 ITRMS = 2x450 A ITAVM = 2x287 A VRRM = 800-1800 V Thyristor Modules Thyristor/Diode Modules VRSM VDSM VRRM VDRM V V 900 1300 1500 1700 1900 800 1200 1400 1600 1800 3 Type Version 1 Version 1 MCC MCC MCC MCC MCC MCD MCD MCD MCD MCD 250-08io1 250-12io1 250-14io1 250-16io1 250-18io1 Symbol Conditions ITRMS, IFRMS ITAVM, IFAVM TVJ = TVJM TC = 85°C; 180° sine ITSM, IFSM TVJ = 45°C VR = 0 1 Maximum Ratings A A t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 9000 9600 A A TVJ = TVJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 7800 8500 A A TVJ = 45°C VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 405 000 380 000 A2s A2s TVJ = TVJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 304 000 300 000 A2s A2s TVJ = TVJM; repetitive, IT = 860 A f = 50 Hz; tP = 200 μs VD = 2/3 VDRM 100 A/μs IG = 1 A; diG/dt = 1 A/μs 800 A/μs 1000 V/μs 120 60 W W PGAV 20 W VRGM 10 V TVJ TVJM Tstg -40...+140 140 -40...+125 °C °C °C 3000 3600 V~ V~ (di/dt)cr non repetitive, IT = 290 A (dv/dt)cr TVJ = TVJM; VDR = 2/3 VDRM RGK = ∞; method 1 (linear voltage rise) PGM TVJ = TVJM; IT = ITAVM; VISOL 50/60 Hz, RMS; IISOL ≤ 1 mA; tP = 30 μs tP = 500 μs t = 1 min t=1s Md Mounting torque (M5) Terminal connection torque (M8) Weight Typical including screws 5 4 250-08io1 250-12io1 250-14io1 250-16io1 250-18io1 450 287 ∫i2dt 7 6 2 2.5-5/22-44 Nm/lb.in. 12-15/106-132 Nm/lb.in. 320 g 3 6 7 1 5 4 2 3 1 5 4 2 MCC MCD Features • International standard package • Direct copper bonded Al2O3 -ceramic base plate • Planar passivated chips • Isolation voltage 3600 V~ • UL registered, E 72873 • Keyed gate/cathode twin pins Applications • Motor control • Power converter • Heat and temperature control for industrial furnaces and chemical processes • Lighting control • Contactless switches Advantages • Space and weight savings • Simple mounting • Improved temperature and power cycling • Reduced protection circuits IXYS reserves the right to change limits, test conditions and dimensions © 2004 IXYS All rights reserved 419 Data according to IEC 60747 and refer to a single thyristor/diode unless otherwise stated. IXYS reserves the right to change limits, test conditions and dimensions 1-4 MCC 250 MCD 250 Symbol Conditions IRRM IDRM TVJ = TVJM; VR = VRRM; VD = VDRM VT, VF IT /IF = 600 A; TVJ = 25°C 1.36 V VT0 rT For power-loss calculations only (TVJ = 140°C) 0.85 0.82 V mΩ VGT VD = 6 V; IGT VD = 6 V; 25°C -40°C 25°C -40°C 2 3 150 200 V V mA mA VGD IGD TVJ = TVJM; VD = 2/3 VDRM 0.25 10 V mA IL TVJ = 25°C; tP = 30 μs; VD = 6 V IG = 0.45 A; diG/dt = 0.45 A/μs 200 mA IH TVJ = 25°C; VD = 6 V; RGK = ∞ 150 mA tgd TVJ = 25°C; VD = ½ VDRM IG = 1 A; diG /dt = 1 A/μs 2 μs tq TVJ = TVJM; IT = 300 A, tP = 200 μs; -di/dt = 10 A/μs VR = 100 V; dv/dt = 50 V/μs; VD = 2/3 VDRM typ. 200 μs QS IRM TVJ = 125°C; IT /IF = 400 A, -di/dt = 50 A/μs 760 275 μC A RthJC per per per per 0.129 0.0645 0.169 0.0845 K/W K/W K/W K/W 12.7 9.6 50 mm mm m/s2 RthJK dS dA a Characteristic Values TVJ TVJ TVJ TVJ = = = = thyristor/diode; DC current module thyristor/diode; DC current module 70 40 other values see Fig. 8/9 Creepage distance on surface Strike distance through air Maximum allowable acceleration mA mA Fig. 1 Gate trigger characteristics Optional accessories for modules Keyed gate/cathode twin plugs with wire length = 350 mm, gate = yellow, cathode = red Type ZY 180L (L = Left for pin pair 4/5) UL 758, style 1385, Type ZY 180R (R = right for pin pair 6/7) CSA class 5851, guide 460-1-1 Fig. 2 Gate trigger delay time Dimensions in mm (1 mm = 0.0394") MCC MCD Threaded spacer for higher Anode/ Cathode construction: Type ZY 250, material brass 20 12 IXYS reserves the right to change limits, test conditions and dimensions 2-4 419 14 © 2004 IXYS All rights reserved MCC 250 MCD 250 Fig. 3 Surge overload current ITSM, IFSM: Crest value, t: duration Fig. 4 ∫i2dt versus time (1-10 ms) Fig. 4a Maximum forward current at case temperature Fig. 5 Power dissipation versus onstate current and ambient temperature (per thyristor or diode) IXYS reserves the right to change limits, test conditions and dimensions © 2004 IXYS All rights reserved 419 Fig. 6 Three phase rectifier bridge: Power dissipation versus direct output current and ambient temperature 3-4 MCC 250 MCD 250 Fig. 7 Three phase AC-controller: Power dissipation versus RMS output current and ambient temperature Fig. 8 Transient thermal impedance junction to case (per thyristor or diode) 0.15 30° DC K/W RthJC for various conduction angles d: ZthJC 0.10 0.05 d RthJC (K/W) DC 180°C 120°C 60°C 30°C 0.129 0.131 0.131 0.132 0.132 Constants for ZthJC calculation: i 0.00 10-3 10-2 10-1 100 101 102 s t Rthi (K/W) ti (s) 0.0035 0.0165 0.1091 0.099 0.168 0.456 Fig. 9 Transient thermal impedance junction to heatsink (per thyristor or diode) 0.20 K/W 30° DC ZthJK 1 2 3 RthJK for various conduction angles d: 0.15 0.10 d RthJK (K/W) DC 180°C 120°C 60°C 30°C 0.169 0.171 0.172 0.172 0.173 Constants for ZthJK calculation: i 0.00 10-3 10-2 10-1 100 101 s t IXYS reserves the right to change limits, test conditions and dimensions 4-4 102 1 2 3 4 Rthi (K/W) ti (s) 0.0033 0.0159 0.1053 0.04 0.099 0.168 0.456 1.36 419 0.05 © 2004 IXYS All rights reserved