MCD255-12IO1

MCC 255 MCD 255 Thyristor Modules Thyristor/Diode Modules ITRMS = 2x 450 A ITAVM = 2x 250 A VRRM = 1200-1800 V 3 VRSM VDSM V 1300 1500 1700 1900 VRRM VDRM V 1200 1400 1600 1800 Type 2 76 5 4 MCC MCC MCC MCC 255-12io1 255-14io1 255-16io1 255-18io1 MCD MCD MCD MCD 255-12io1 255-14io1 255-16io1 255-18io1 1 3 671 542 Symbol ITRMS, IFRMS ITAVM, IFAVM ITSM, IFSM Test Conditions TVJ = TVJM TC = 85°C; 180° sine TVJ = 45°C; VR = 0 TVJ = TVJM VR = 0 t = 10 ms (50 Hz) t = 8.3 ms (60 Hz) t = 10 ms (50 Hz) t = 8.3 ms (60 Hz) t = 10 ms (50 Hz) t = 8.3 ms (60 Hz) t = 10 ms (50 Hz) t = 8.3 ms (60 Hz) repetitive, IT = 860 A non repetitive, IT = ITAVM Maximum Ratings 450 250 9000 9600 7800 8600 405 000 382 000 304 000 307 000 100 A A A A A A A2s A2s A2s A2s A/ms A/ms V/ms W W W V °C °C °C V~ V~ MCC 3 1 5 42 MCD òi2dt TVJ = 45°C VR = 0 TVJ = TVJM VR = 0 (di/dt)cr TVJ = TVJM f =50 Hz, tP =200 ms VD = 2/3 VDRM IG = 1 A, diG/dt = 1 A/ms 500 1000 120 60 20 10 -40...+130 130 -40...+125 Features International standard package Direct copper bonded Al2O3-ceramic with copper base plate Planar passivated chips Isolation voltage 3600 V~ UL registered E 72873 Keyed gate/cathode twin pins q q q q q q (dv/dt)cr PGM PGAV VRGM TVJ TVJM Tstg VISOL Md Weight TVJ = TVJM; VDR = 2/3 VDRM RGK = ¥; method 1 (linear voltage rise) TVJ = TVJM IT = ITAVM tP = 30 ms tP = 500 ms Applications Motor control, softstarter Power converter Heat and temperature control for industrial furnaces and chemical processes Lighting control Solid state switches q q q q q q 50/60 Hz, RMS IISOL £ 1 mA t = 1 min t=1s 3000 3600 q Mounting torque (M6) Terminal connection torque (M8) Typical including screws 4.5-7/40-62 Nm/lb.in. 11-13/97-115 Nm/lb.in. 750 g q Advantages Simple mounting Improved temperature and power cycling Reduced protection circuits Data according to IEC 60747 and refer to a single thyristor/diode unless otherwise stated. IXYS reserves the right to change limits, test conditions and dimensions © 2000 IXYS All rights reserved 1-4 MCC 255 MCD 255 Symbol IRRM, IDRM VT, VF VT0 rT VGT IGT VGD IGD IL IH tgd tq QS IRM RthJC RthJK dS dA a Test Conditions TVJ = TVJM; VR = VRRM; VD = VDRM IT, IF = 600 A; TVJ = 25°C For power-loss calculations only (TVJ = 130°C) VD = 6 V; VD = 6 V; TVJ = TVJM; TVJ = TVJM; TVJ = 25°C TVJ = -40°C TVJ = 25°C TVJ = -40°C VD = 2/3 VDRM VD = 2/3 VDRM Characteristic Values 40 1.36 0.8 0.68 2 3 150 220 0.25 10 200 150 2 typ. 200 760 275 0.140 0.07 0.18 0.09 mA V V mW V V mA mA V mA mA IGD, TVJ = 140°C 30 4: PGM = 20 W 5: PGM = 60 W 6: PGM = 120 W 100 IG 101 A 102 2 1 1 4 VG 10 1: IGT, TVJ = 140°C 30 V 2: IGT, TVJ = 25°C 3: IGT, TVJ = -40°C 3 6 5 TVJ = 25°C; tP = 30 ms; VD = 6 V IG = 0.45 A; diG/dt = 0.45 A/ms TVJ = 25°C; VD = 6 V; RGK = ¥ TVJ = 25°C; VD = 1/2 VDRM IG = 1 A; diG/dt = 1 A/ms TVJ = TVJM; IT = 300 A, tP = 200 ms; -di/dt = 10 A/ms VR = 100 V; dv/dt = 50 V/ms; VD = 2/3 VDRM TVJ = 125°C; IT, IF = 300 A; -di/dt = 50 A/ms per thyristor (diode); DC current per module per thyristor (diode); DC current per module Creeping distance on surface Creepage distance in air Maximum allowable acceleration mA ms ms mC A K/W K/W K/W K/W 0.1 10-3 10-2 10-1 Fig. 1 Gate trigger characteristics 100 TVJ = 25°C µs tgd typ. Limit other values see Fig. 8/9 12.7 mm 9.6 mm 50 m/s2 10 Optional accessories for modules Keyed Gate/Cathode twin plugs with wire length = 350 mm, gate = yellow, cathode = red Type ZY 180 L (L = Left for pin pair 4/5) UL 758, style 1385, Type ZY 180 R (R = Right for pin pair 6/7) CSA class 5851, guide 460-1-1 1 0.01 0.1 1 IG A 10 Dimensions in mm (1 mm = 0.0394") MCC 255 M8x20 MCD 255 M8x20 Fig. 2 Gate trigger delay time © 2000 IXYS All rights reserved 2-4 MCC 255 MCD 255 10000 ITSM A 8000 50 Hz 80 % VRRM TVJ = 45°C TVJ = 130°C I2dt A2 s TVJ = 45°C 300 106 400 ITAVM A IFAVM DC 180° sin 120° 60° 30° 6000 105 4000 TVJ = 130°C 200 100 2000 0 0.001 104 0.01 0.1 s t 1 1 t ms 10 0 0 25 50 75 100 125 °C 150 TC Fig. 3 Surge overload current ITSM, IFSM: Crest value, t: duration Ptot 500 W 400 Fig. 4 òi2dt versus time (1-10 ms) Fig. 4a Maximum forward current at case temperature Fig. 5 Power dissipation versus onstate current and ambient temperature (per thyristor or diode) RthKA K/W 0.1 0.2 0.3 0.4 0.6 0.8 1.0 300 200 DC 180° sin 120° 60° 30° 100 0 0 100 200 300 A 0 25 50 75 100 125 °C 150 TA ITAVM/IFAVM 2000 Ptot W RthKA K/W 0.03 0.06 0.1 0.15 0.2 0.3 0.4 1500 Fig. 6 Three phase rectifier bridge: Power dissipation versus direct output current and ambient temperature 1000 Circuit B6 3xMCC255 or 3xMCD255 500 0 0 200 400 600 A IdAVM 0 25 50 75 100 125 °C 150 TA © 2000 IXYS All rights reserved 3-4 MCC 255 MCD 255 2000 Ptot W RthKA K/W 0.03 0.06 0.1 0.15 0.2 0.3 0.4 1500 Fig. 7 Three phase AC-controller: Power dissipation versus RMS output current and ambient temperature 1000 500 Circuit W3 3xMCC255 or 3xMCD255 0 0 100 200 300 400 500 A 0 IRMS 25 50 75 100 125 TA °C 150 0.25 K/W ZthJC 0.20 Fig. 8 Transient thermal impedance junction to case (per thyristor or diode) RthJC for various conduction angles d: 0.15 d 30° 60° 120° 180° DC RthJC (K/W) 0.139 0.148 0.156 0.176 0.214 0.10 DC 180° 120° 60° 30° 0.05 Constants for ZthJC calculation: 0.00 10-3 i 10-2 10-1 100 101 s t 102 Rthi (K/W) 0.0066 0.0358 0.0831 0.0129 ti (s) 0.00054 0.098 0.54 12 1 2 3 4 0.30 K/W 0.25 ZthJK 0.20 Fig. 9 Transient thermal impedance junction to heatsink (per thyristor or diode) RthJK for various conduction angles d: d RthJK (K/W) 0.179 0.188 0.196 0.216 0.254 DC 180° 120° 60° 30° 0.15 30° 60° 120° 180° DC 0.10 0.05 Constants for ZthJK calculation: i 10-2 10-1 100 101 t s 102 0.00 10-3 Rthi (K/W) 0.0066 0.0358 0.0831 0.0129 0.04 ti (s) 0.00054 0.098 0.54 12 12 1 2 3 4 5 © 2000 IXYS All rights reserved 4-4