MCD26-12IO8B

MCD26-12io8B Thyristor \ Diode Module VRRM = 2x 1200 V I TAV = 27 A VT = 1.27 V Phase leg Part number MCD26-12io8B Backside: isolated 3 1 5 2 Features / Advantages: Applications: Package: TO-240AA ● Thyristor for line frequency ● Planar passivated chip ● Long-term stability ● Direct Copper Bonded Al2O3-ceramic ● Line rectifying 50/60 Hz ● Softstart AC motor control ● DC Motor control ● Power converter ● AC power control ● Lighting and temperature control ● Isolation Voltage: 4800 V~ ● Industry standard outline ● RoHS compliant ● Soldering pins for PCB mounting ● Base plate: DCB ceramic ● Reduced weight ● Advanced power cycling Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20200701d MCD26-12io8B Ratings Rectifier Conditions Symbol VRSM/DSM Definition max. non-repetitive reverse/forward blocking voltage TVJ = 25°C VRRM/DRM max. repetitive reverse/forward blocking voltage TVJ = 25°C 1200 I R/D reverse current, drain current VT forward voltage drop TVJ = 25°C 100 µA 3 mA TVJ = 25°C 1.27 V 1.64 V 1.27 V IT = 40 A IT = 80 A IT = 40 A IT = 80 A I T(RMS) RMS forward current 180° sine VT0 threshold voltage rT slope resistance R thJC thermal resistance junction to case TVJ = 125 °C for power loss calculation only thermal resistance case to heatsink total power dissipation I TSM max. forward surge current value for fusing V TVJ = 125°C TC = 85 °C RthCH max. Unit 1300 V VR/D = 1200 V average forward current Ptot typ. VR/D = 1200 V I TAV I²t min. 1.65 V T VJ = 125 °C 27 A 42 A TVJ = 125 °C 0.85 V 11 mΩ 0.88 K/W 0.2 K/W TC = 25°C 115 W t = 10 ms; (50 Hz), sine TVJ = 45°C 520 A t = 8,3 ms; (60 Hz), sine VR = 0 V 560 A t = 10 ms; (50 Hz), sine TVJ = 125 °C 440 A t = 8,3 ms; (60 Hz), sine VR = 0 V 475 A t = 10 ms; (50 Hz), sine TVJ = 45°C 1.35 kA²s t = 8,3 ms; (60 Hz), sine VR = 0 V 1.31 kA²s t = 10 ms; (50 Hz), sine TVJ = 125 °C 970 A²s 940 A²s t = 8,3 ms; (60 Hz), sine VR = 0 V CJ junction capacitance VR = 400 V f = 1 MHz TVJ = 25°C PGM max. gate power dissipation t P = 30 µs T C = 125 °C 22 t P = 300 µs pF 10 W 5 W 0.5 W PGAV average gate power dissipation (di/dt) cr critical rate of rise of current TVJ = 125 °C; f = 50 Hz repetitive, IT = t P = 200 µs; di G /dt = 0.45 A/µs; 45 A I G = 0.45 A; V = ⅔ VDRM 27 A (dv/dt)cr critical rate of rise of voltage V = ⅔ VDRM VGT gate trigger voltage VD = 6 V TVJ = 25 °C TVJ = -40 °C 1.6 V I GT gate trigger current VD = 6 V TVJ = 25 °C 100 mA TVJ = -40 °C 200 mA VGD gate non-trigger voltage TVJ = 125°C 0.2 V I GD gate non-trigger current 10 mA IL latching current TVJ = 25 °C 450 mA non-repet., I T = 150 A/µs 500 A/µs 1000 V/µs TVJ = 125°C R GK = ∞; method 1 (linear voltage rise) VD = ⅔ VDRM tp = 10 µs 1.5 V IG = 0.45 A; di G /dt = 0.45 A/µs IH holding current VD = 6 V R GK = ∞ TVJ = 25 °C 200 mA t gd gate controlled delay time VD = ½ VDRM TVJ = 25 °C 2 µs tq turn-off time IG = 0.45 A; di G /dt = 0.45 A/µs VR = 100 V; I T = 20A; V = ⅔ VDRM TVJ =100 °C di/dt = 10 A/µs dv/dt = IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved 150 µs 20 V/µs t p = 200 µs Data according to IEC 60747and per semiconductor unless otherwise specified 20200701d MCD26-12io8B Package Ratings TO-240AA Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -40 typ. max. 200 Unit A -40 125 °C -40 100 °C 125 °C 81 Weight g MD mounting torque 2.5 4 Nm MT terminal torque 2.5 4 Nm d Spp/App creepage distance on surface | striking distance through air d Spb/Apb VISOL t = 1 minute Ordering Number MCD26-12io8B Similar Part MCMA35PD1200TB MCMA50PD1200TB Equivalent Circuits for Simulation I V0 13.0 16.0 t = 1 second isolation voltage Ordering Standard terminal to terminal terminal to backside R0 50/60 Hz, RMS; IISOL ≤ 1 mA Marking on Product MCD26-12io8B Package TO-240AA-1B TO-240AA-1B * on die level Delivery Mode Box mm 16.0 mm 4800 V 4000 V Quantity 36 Code No. 453250 Voltage class 1200 1200 T VJ = 125°C Thyristor V 0 max threshold voltage 0.85 V R0 max slope resistance * 9.8 mΩ IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved 9.7 Data according to IEC 60747and per semiconductor unless otherwise specified 20200701d MCD26-12io8B Outlines TO-240AA 3 IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved 1 5 2 Data according to IEC 60747and per semiconductor unless otherwise specified 20200701d MCD26-12io8B Thyristor 104 800 60 ITSM = 50 Hz IFSM = 80% VRRM DC 180 ° sin 120 ° 60 ° 30 ° 50 600 40 ITSM I2dt TVJ = 45°C 103 400 30 TVJ = 125°C TVJ = 45°C [A] ITAVM [A] [A2s] 20 200 10 TVJ = 125°C 102 0 0.01 0.1 1 0 1 10 t [s] 0 25 50 2 Fig. 1 Surge overload current ITSM, IFSM: Crest value, t: duration Fig. 3 Max. forward current at case temperature Fig. 2 I t versus time (1-10 ms) 70 10 RthKA K/W 1.5 2 2.5 3 4 5 6 8 60 50 Ptot 40 20 1: IGT, TVJ = 125°C 2: IGT, TVJ = 25°C 3: IGT, TVJ = -40°C 5 VG 2 1 DC 180 ° sin 120 ° 60 ° 30 ° [W] 30 75 100 125 150 TC [°C] t [ms] 3 1 [V] 4: PGAV = 0.5 W 5: PGM = 5 W 6: PGM = 10 W 10 IGD , T4 = 125°C 0 0 10 20 30 40 0 25 50 ITAVM [A] 75 100 125 0.1 100 150 6 4 101 102 103 104 IG [mA] Ta [°C] Fig. 4 Power dissipation vs. on-state current & ambient temperature (per thyristor or diode) Fig. 5 Gate trigger characteristics 300 100 TVJ = 25°C RthKA K/W 0.1 0.15 0.2 0.25 0.3 0.4 0.5 0.6 250 Circuit B6 3x MCC26 or 200 Ptot 3x MCD26 150 10 tgd [W] [µs] 100 limit 1 typ. 50 0 0 20 40 60 0 25 IdAVM [A] 50 75 100 125 Ta [°C] Fig. 6 Three phase rectifier bridge: Power dissipation versus direct output current and ambient temperature IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved 150 0.1 0.01 0.1 1 10 IG [A] Fig. 7 Gate trigger delay time Data according to IEC 60747and per semiconductor unless otherwise specified 20200701d MCD26-12io8B Rectifier 320 RthKA K/W Circuit W3 3x MCC26 or 3x MCD26 280 240 0.1 0.15 0.2 0.25 0.3 0.4 0.5 0.6 200 Ptot 160 [W] 120 80 40 0 0 20 40 60 0 25 IRMS [A] 50 75 100 125 150 Ta [°C] Fig. 8 Three phase AC-controller: Power dissipation versus RMS output current and ambient temperature 1.2 RthJC for various conduction angles d: 1.0 ZthJC 0.8 30° 60° 120° 180° DC 0.6 [K/W] d RthJC [K/W] DC 0.88 180° 0.92 120° 0.95 60° 0.98 30° 1.01 0.4 Constants for ZthJC calculation: 0.2 0.0 10-2 10-1 100 101 i Rthi [K/W] 1 0.019 2 0.029 3 0.832 ti [s] 0.0031 0.0216 0.1910 t [s] Fig. 9 Transient thermal impedance junction to case (per thyristor/diode) 1.4 RthJK for various conduction angles d: 1.2 1.0 30° 60° 120° 180° DC 0.8 ZthJK d RthJK [K/W] DC 1.08 180° 1.12 120° 1.15 60° 1.18 30° 1.21 0.6 Constants for ZthJK calculation: [K/W] 0.4 0.2 0.0 10-2 10-1 100 101 i Rthi [K/W] 1 0.019 2 0.029 3 0.832 4 0.200 ti [s] 0.0031 0.0216 0.1910 0.4500 t [s] Fig. 10 Transient thermal impedance junction to heatsink (per thyristor/diode) IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20200701d