MCD310-22IO1

MCC 310 MCD 310 ITRMS = 2x 500 A ITAVM = 2x 320 A VRRM = 2200 V Thyristor Modules Thyristor/Diode Modules VRSM VDSM VRRM VDRM V V 2300 2200 3 Type 6 7 1 5 4 2 3 7 6 5 1 MCC Version 1 2 4 Version 1 MCC 310-22io1 MCD 310-22io1 3 1 5 4 2 MCD Symbol Conditions Maximum Ratings ITRMS, IFRMS ITAVM, IFAVM TVJ = TVJM TC = 85°C; 180° sine ITSM, IFSM TVJ = 45°C VR = 0 Features • International standard package • Direct copper bonded Al2O3 -ceramic base plate • Planar passivated chips • Isolation voltage 3600 V~ • UL registered, E 72873 • Keyed gate/cathode twin pins 500 320 A A t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 8000 8600 A A TVJ = TVJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 7000 7500 A A TVJ = 45°C VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 320 000 310 000 A2s A2 s TVJ = TVJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 245 000 235 000 A2s A2 s 100 A/µs 500 A/µs • Motor control • Power converter • Heat and temperature control for industrial furnaces and chemical processes • Lighting control • Contactless switches 1000 V/µs Advantages 120 60 W W PGAV 20 W VRGM 10 V TVJ TVJM Tstg -40...+140 140 -40...+125 °C °C °C 3000 3600 V~ V~ I2dt (di/dt)cr TVJ = TVJM repetitive, IT = 960 A f = 50 Hz, tP = 200 µs VD = 2/3 VDRM IG = 1 A non repetitive, IT = 320 A diG/dt = 1 A/µs (dv/dt)cr TVJ = TVJM; VDR = 2/3 VDRM RGK = ∞; method 1 (linear voltage rise) PGM TVJ = TVJM; IT = ITAVM; tP = 30 µs tP = 500 µs VISOL 50/60 Hz, RMS; t = 1 min IISOL ≤ 1 mA; t=1s Md Mounting torque (M5) Terminal connection torque (M8) Weight Typical including screws Applications • Space and weight savings • Simple mounting • Improved temperature and power cycling • Reduced protection circuits 2.5-5/22-44 Nm/lb.in. 12-15/106-132 Nm/lb.in. 320 g IXYS reserves the right to change limits, test conditions and dimensions. 0620 Data according to IEC 60747 and refer to a single thyristor/diode unless otherwise stated. © 2006 IXYS All rights reserved 1 MCC 310 MCD 310 Symbol Conditions IRRM IDRM TVJ = TVJM; VR = VRRM; VD = VDRM Characteristic Values VT, VF 70 40 mA mA IT, IF = 600 A; TVJ = 25°C 1.40 V VT0 rT For power-loss calculations only (TVJ = 140°C) 0.8 0.82 V mΩ VGT VD = 6 V; IGT VD = 6 V; TVJ = 25°C TVJ = -40°C TVJ = 25°C TVJ = -40°C 2 3 150 200 V V mA mA VGD IGD TVJ = TVJM; VD = 2/3 VDRM 0.25 10 V mA IL TVJ = 25°C; tP = 30 µs; VD = 6 V IG = 0.45 A; diG/dt = 0.45 A/µs 200 mA IH TVJ = 25°C; VD = 6 V; RGK = ∞ 150 mA tgd TVJ = 25°C; VD = ½ VDRM IG = 1 A; diG/dt = 1 A/µs 2 µs tq TVJ = TVJM; IT = 300 A, tP = 200 µs; -di/dt = 10 A/µs VR = 100 V; dv/dt = 50 V/µs; VD = 2/3 VDRM typ. 200 µs QS IRM TVJ = 125°C; IT, IF = 400 A, -di/dt = 50 A/µs 760 275 µC A RthJC per thyristor/diode; DC current per module per thyristor/diode; DC current per module 0.112 0.056 0.152 0.076 K/W K/W K/W K/W 12.7 9.6 50 mm mm m/s2 RthJK dS dA a other values see Fig. 8/9 Creepage distance on surface Strike distance through air Maximum allowable acceleration Fig. 1 Gate trigger characteristics Optional accessories for modules Keyed gate/cathode twin plugs with wire length = 350 mm, gate = yellow, cathode = red Type ZY 180L (L = Left for pin pair 4/5) UL 758, style 1385, Type ZY 180R (R = right for pin pair 6/7) CSA class 5851, guide 460-1-1 Dimensions in mm (1 mm = 0.0394") MCC MCD Fig. 2 Gate trigger delay time Threaded spacer for higher Anode/ Cathode construction: Type ZY 250, material brass 20 12 IXYS reserves the right to change limits, test conditions and dimensions. 0620 14 © 2006 IXYS All rights reserved 2 MCC 310 MCD 310 106 10000 ITSM VR = 0 V 2 It A 50 Hz 80% VRRM TVJ = 45°C TVJ = 140°C 8000 A2s 6000 TVJ = 45°C 105 4000 TVJ = 140°C 2000 0 0.001 0.01 0.1 s 1 104 0.001 Fig. 3 Surge overload current ITSM, IFSM: Crest value, t: duration ms 0.01 t t Fig. 4 ∫i2dt versus time (1-10 ms) Fig. 4a Maximum forward current at case temperature Fig. 5 Power dissipation versus onstate current and ambient temperature (per thyristor or diode) IXYS reserves the right to change limits, test conditions and dimensions. 0620 Fig. 6 Three phase rectifier bridge: Power dissipation versus direct output current and ambient temperature © 2006 IXYS All rights reserved 3 MCC 310 MCD 310 Fig. 7 Three phase AC-controller: Power dissipation versus RMS output current and ambient temperature 0.15 Fig. 8 Transient thermal impedance junction to case (per thyristor or diode) K/W ZthJC 30° DC RthJC for various conduction angles d: 0.10 0.05 d RthJC (K/W) DC 180°C 120°C 60°C 30°C 0.112 0.113 0.114 0.115 0.115 Constants for ZthJC calculation: i 0.000 10-3 10-2 10-1 100 101 102 s t 0.20 1 2 3 ti (s) 0.003 0.0143 0.0947 0.099 0.168 0.456 Fig. 9 Transient thermal impedance junction to heatsink (per thyristor or diode) K/W ZthJK 30° DC 0.15 RthJK for various conduction angles d: 0.10 0.05 d RthJK (K/W) DC 180°C 120°C 60°C 30°C 0.152 0.154 0.154 0.155 0.155 Constants for ZthJK calculation: i 0 0.00 10-3 Rthi (K/W) 10-2 10-1 100 101 s 1 2 3 4 ti (s) 0.003 0.0143 0.0947 0.04 0.099 0.168 0.456 1.36 IXYS reserves the right to change limits, test conditions and dimensions. 0620 t 102 Rthi (K/W) © 2006 IXYS All rights reserved 4