MCD44-14IO1B

MCD44-14io1B Thyristor \ Diode Module VRRM = 2x 1400 V I TAV = 49 A VT = 1.34 V Phase leg Part number MCD44-14io1B Backside: isolated 3 1 5 4 2 Features / Advantages: Applications: Package: TO-240AA ● Thyristor for line frequency ● Planar passivated chip ● Long-term stability ● Direct Copper Bonded Al2O3-ceramic ● Line rectifying 50/60 Hz ● Softstart AC motor control ● DC Motor control ● Power converter ● AC power control ● Lighting and temperature control ● Isolation Voltage: 4800 V~ ● Industry standard outline ● RoHS compliant ● Soldering pins for PCB mounting ● Base plate: DCB ceramic ● Reduced weight ● Advanced power cycling Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20200701d MCD44-14io1B Ratings Rectifier Conditions Symbol VRSM/DSM Definition max. non-repetitive reverse/forward blocking voltage TVJ = 25°C VRRM/DRM max. repetitive reverse/forward blocking voltage TVJ = 25°C 1400 I R/D reverse current, drain current VT forward voltage drop min. typ. VR/D = 1400 V TVJ = 25°C 100 µA TVJ = 125°C 5 mA I T = 100 A TVJ = 25°C 1.34 V 1.75 V 1.34 V TVJ = 125 °C I T = 100 A I T = 200 A I TAV average forward current TC = 85 °C I T(RMS) RMS forward current 180° sine VT0 threshold voltage rT slope resistance R thJC thermal resistance junction to case for power loss calculation only RthCH thermal resistance case to heatsink total power dissipation I TSM max. forward surge current I²t value for fusing V VR/D = 1400 V I T = 200 A Ptot max. Unit 1600 V 1.80 V T VJ = 125 °C 49 A 77 A TVJ = 125 °C 0.85 V 5.3 mΩ 0.53 K/W 0.2 K/W TC = 25°C 180 W t = 10 ms; (50 Hz), sine TVJ = 45°C 1.15 kA t = 8,3 ms; (60 Hz), sine VR = 0 V 1.24 kA t = 10 ms; (50 Hz), sine TVJ = 125 °C 980 A t = 8,3 ms; (60 Hz), sine VR = 0 V 1.06 kA t = 10 ms; (50 Hz), sine TVJ = 45°C 6.62 kA²s t = 8,3 ms; (60 Hz), sine VR = 0 V 6.40 kA²s t = 10 ms; (50 Hz), sine TVJ = 125 °C 4.80 kA²s t = 8,3 ms; (60 Hz), sine VR = 0 V CJ junction capacitance VR = 400 V f = 1 MHz TVJ = 25°C PGM max. gate power dissipation t P = 30 µs T C = 125 °C 4.63 kA²s 54 t P = 300 µs pF 10 W 5 W 0.5 W PGAV average gate power dissipation (di/dt) cr critical rate of rise of current TVJ = 125 °C; f = 50 Hz repetitive, IT = 150 A t P = 200 µs; di G /dt = 0.45 A/µs; (dv/dt)cr critical rate of rise of voltage V = ⅔ VDRM VGT gate trigger voltage VD = 6 V TVJ = 25 °C TVJ = -40 °C 1.6 V I GT gate trigger current VD = 6 V TVJ = 25 °C 100 mA TVJ = -40 °C 200 mA VGD gate non-trigger voltage TVJ = 125°C 0.2 V I GD gate non-trigger current 10 mA IL latching current TVJ = 25 °C 450 mA I G = 0.45 A; V = ⅔ VDRM non-repet., I T = 150 A/µs 49 A 500 A/µs 1000 V/µs TVJ = 125°C R GK = ∞; method 1 (linear voltage rise) VD = ⅔ VDRM tp = 10 µs 1.5 V IG = 0.45 A; di G /dt = 0.45 A/µs IH holding current VD = 6 V R GK = ∞ TVJ = 25 °C 200 mA t gd gate controlled delay time VD = ½ VDRM TVJ = 25 °C 2 µs tq turn-off time IG = 0.45 A; di G /dt = 0.45 A/µs VR = 100 V; I T = 120A; V = ⅔ VDRM TVJ =100 °C di/dt = 10 A/µs dv/dt = IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved 150 µs 20 V/µs t p = 200 µs Data according to IEC 60747and per semiconductor unless otherwise specified 20200701d MCD44-14io1B Package Ratings TO-240AA Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -40 typ. max. 200 Unit A -40 125 °C -40 100 °C 125 °C 81 Weight g MD mounting torque 2.5 4 Nm MT terminal torque 2.5 4 Nm d Spp/App creepage distance on surface | striking distance through air d Spb/Apb VISOL t = 1 minute Ordering Number MCD44-14io1B Similar Part MCMA50PD1600TB MCMA65PD1600TB Equivalent Circuits for Simulation I V0 13.0 16.0 t = 1 second isolation voltage Ordering Standard terminal to terminal terminal to backside R0 50/60 Hz, RMS; IISOL ≤ 1 mA Marking on Product MCD44-14io1B Package TO-240AA-1B TO-240AA-1B * on die level Delivery Mode Box mm 16.0 mm 4800 V 4000 V Quantity 36 Code No. Voltage class 1600 1600 T VJ = 125°C Thyristor V 0 max threshold voltage 0.85 V R0 max slope resistance * 4.1 mΩ IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved 9.7 Data according to IEC 60747and per semiconductor unless otherwise specified 20200701d MCD44-14io1B Outlines TO-240AA 3 IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved 1 5 4 2 Data according to IEC 60747and per semiconductor unless otherwise specified 20200701d MCD44-14io1B Thyristor 104 1200 100 VR = 0 V 50 Hz, 80% VRRM 1000 DC 180° sin 120° 60° 30° 80 TVJ = 45°C 800 ITSM IFSM I 2t TVJ = 45°C ITAVM TVJ = 125°C 600 [A] [A2s] 60 [A] 40 400 TVJ = 125°C 20 200 103 0 10-3 10-2 10-1 100 101 1 t [s] Fig. 1 Surge overload current ITSM, IFSM: Crest value, t: duration 2 3 6 8 0 10 0 t [ms] RthJA 100 150 TC [°C] Fig. 3 Maximum forward current at case temperature Fig. 2 I2t versus time (1-10 ms) 120 50 10 [K/W] 1: IGT, TVJ = 125°C 2: IGT, TVJ = 25°C 3: IGT, TVJ = -40°C 1 100 1.5 2 PT [W] 80 2.5 VG 3 60 2 1 4 [V] 3 5 4 5 40 DC 180° sin 120° 60° 30° 20 6 4: PGAV = 0.5 W 5: PGM = 5 W 6: PGM = 10 W IGD, TVJ = 125°C 0 0 20 40 60 80 6 1 0 50 ITAVM, IFAVM [A] 100 0.1 100 150 101 TA [°C] 102 103 104 IG [mA] Fig. 4 Power dissipation vs. onstate current and ambient temperature (per thyristor/diode) Fig. 5 Gate trigger characteristics 1000 500 RthKA [K/W] TVJ = 25°C 0.1 0.15 400 0.2 Ptot 300 0.4 200 Limit tgd 0.3 [W] typ. 100 0.25 [µs] 0.5 Circuit B6 3x MCC44 or 3x MCD44 10 0.6 100 0 0 50 100 IdAVM [A] 0 50 100 TA [°C] Fig. 6 Three phase rectifier bridge: Power dissipation versus direct output current and ambient temperature IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved 150 1 10 100 1000 IG [mA] Fig. 7 Gate trigger delay time Data according to IEC 60747and per semiconductor unless otherwise specified 20200701d MCD44-14io1B Rectifier 500 RthJA [KW] 0.1 0.15 400 0.2 0.25 Ptot 300 0.3 0.4 [W] 200 0.5 Circuit W3 3x MCC44 or 3x MCD44 100 0.6 0 0 20 40 60 80 100 0 50 IRMS [A] 100 150 TA [°C] Fig. 8 Three phase AC-controller: Power dissipation versus RMS output current and ambient temperature 0.8 RthJC for various conduction angles d: 30° 60° DC 0.53 180° 180° 0.55 DC 120° 0.58 60° 0.60 30° 0.62 120° 0.6 0.4 Constants for ZthJC calculation: 0.2 0 10-3 10 -2 10-1 100 101 102 1 0.015 0.0035 2 0.026 0.0200 3 0.489 0.1950 103 Fig. 9 Transient thermal impedance junction to case (per thyristor) 1.0 RthJK for various conduction angles d: 30° 60° 0.8 DC 180° 120° 60° 30° 120° 180° DC 0.6 0.73 0.75 0.78 0.80 0.82 Constants for ZthJK calculation: 0.4 1 2 3 4 0.2 0 10-3 10-2 10-1 100 101 102 0.015 0.026 0.489 0.200 0.0035 0.0200 0.0195 0.6800 103 Fig. 10 Transient thermal impedance junction to heatsink (per thyristor) IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20200701d