MCD56-08IO1B

MDC 56 MCC 56 MCD 56 Thyristor Modules Thyristor/Diode Modules VRSM VDSM V 900 1300 1500 1700 1900 VRRM VDRM V 800 1200 1400 1600 1800 Type ITRMS = 2x 100 A ITAVM = 2x 64 A VRRM = 800-1800 V TO-240 AA 2 1 3 6 7 4 5 Version 1 MCC MCC MCC MCC MCC 56-08io1 56-12io1 56-14io1 56-16io1 56-18io1 B MCD 56-08io1 B B MCD 56-12io1 B B -B MCD 56-16io1 B B -- Version 8 MCC MCC MCC MCC MCC 56-08io8 56-12io8 56-14io8 56-16io8 56-18io8 B B B B B MCD MCD MCD MCD MCD 56-08io8 56-12io8 56-14io8 56-16io8 56-18io8 B B B B B 3 671 542 1500 1400 1700 1600 700 600 MCC 56-14io1 MCC 56-16io1 MDC 56-06io1 B MCC Version 1 3 1 5 42 Symbol ITRMS, IFRMS ITAVM, IFAVM ITSM, IFSM Test Conditions TVJ = TVJM TC = 83°C; 180° sine TC = 85°C; 180° sine TVJ = 45°C; VR = 0 TVJ = TVJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine Maximum Ratings 100 64 60 1500 1600 1350 1450 11 200 10 750 9100 8830 150 A A A A A A A A2s A2 s A2 s A2 s A/ms A/ms V/ms W W W V °C °C °C V~ V~ MCD Version 1 3 6 1 52 MCC Version 8 3 1 52 òi2dt TVJ = 45°C VR = 0 TVJ = TVJM VR = 0 MCD Version 8 3 671 2 (di/dt)cr TVJ = TVJM repetitive, IT = 150 A f =50 Hz, tP =200 ms VD = 2/3 VDRM IG = 0.45 A non repetitive, IT = ITAVM diG/dt = 0.45 A/ms TVJ = TVJM; VDR = 2/3 VDRM RGK = ¥; method 1 (linear voltage rise) TVJ = TVJM IT = ITAVM tP = 30 ms tP = 300 ms MDC Version 1 Features 500 1000 10 5 0.5 10 -40...+125 125 -40...+125 q (dv/dt)cr PGM PGAV VRGM TVJ TVJM Tstg VISOL Md Weight q q q q q International standard package, JEDEC TO-240 AA Direct copper bonded Al2O3 -ceramic base plate Planar passivated chips Isolation voltage 3600 V~ UL registered, E 72873 Gate-cathode twin pins for version 1B Applications q q q 50/60 Hz, RMS IISOL £ 1 mA t = 1 min t=1s 3000 3600 DC motor control Softstart AC motor controller Light, heat and temperature control Advantages q q q Mounting torque (M5) Terminal connection torque (M5) Typical including screws 2.5-4.0/22-35 Nm/lb.in. 2.5-4.0/22-35 Nm/lb.in. 90 g © 2000 IXYS All rights reserved 1-4 031 Data according to IEC 60747 and refer to a single thyristor/diode unless otherwise stated. IXYS reserves the right to change limits, test conditions and dimensions q Space and weight savings Simple mounting with two screws Improved temperature and power cycling Reduced protection circuits MDC 56 Symbol IRRM, IDRM VT, VF VT0 rT VGT IGT VGD IGD IL IH tgd tq QS IRM RthJC RthJK dS dA a Test Conditions TVJ = TVJM; VR = VRRM; VD = VDRM IT, IF = 200 A; TVJ = 25°C For power-loss calculations only (TVJ = 125°C) VD = 6 V; VD = 6 V; TVJ = TVJM; TVJ = 25°C TVJ = -40°C TVJ = 25°C TVJ = -40°C VD = 2/3 VDRM Characteristic Values 5 1.57 0.85 3.7 1.5 1.6 100 200 0.2 10 450 200 2 150 100 24 0.45 0.225 0.65 0.325 12.7 9.6 50 mA V V mW V V mA mA V mA mA IGD, TVJ = 125°C VG 10 1: IGT, TVJ = 125°C MCC 56 MCD 56 V 2: IGT, TVJ = 25°C 3: IGT, TVJ = -40°C 3 1 1 4 2 5 6 TVJ = 25°C; tP = 10 ms; VD = 6 V IG = 0.45 A; diG/dt = 0.45 A/ms TVJ = 25°C; VD = 6 V; RGK = ¥ TVJ = 25°C; VD = 1/2 VDRM IG = 0.45 A; diG/dt = 0.45 A/ms TVJ = TVJM; IT = 150 A, tP = 200 ms; -di/dt = 10 A/ms typ. VR = 100 V; dv/dt = 20 V/ms; VD = 2/3 VDRM TVJ = TVJM; IT, IF = 50 A, -di/dt = 3 A/ms per per per per thyristor/diode; DC current module thyristor/diode; DC current module 4: PGAV = 0.5 W 5: PGM = 5W 6: PGM = 10 W 102 103 IG mA ms ms 0.1 100 101 mA 104 Fig. 1 Gate trigger characteristics 1000 mC A K/W K/W K/W K/W mm mm m/s2 tgd TVJ = 25°C µs other values see Fig. 8/9 typ. 100 Limit Creepage distance on surface Strike distance through air Maximum allowable acceleration 10 Optional accessories for module-type MCC 56 version 1 B Keyed gate/cathode twin plugs with wire length = 350 mm, gate = yellow, cathode = red Type ZY 200L (L = Left for pin pair 4/5) UL 758, style 1385, Type ZY 200R (R = right for pin pair 6/7) CSA class 5851, guide 460-1-1 1 10 mA IG 100 1000 Fig. 2 Gate trigger delay time Dimensions in mm (1 mm = 0.0394") MCC / MCD / MDC Version 1 B MCC Version 8 B MCD Version 8 B Version 1 or 8 without B in typ designation = without insert in mountig holes © 2000 IXYS All rights reserved 2-4 MDC 56 MCC 56 MCD 56 Fig. 3 Surge overload current ITSM, IFSM: Crest value, t: duration Fig. 4 òi2dt versus time (1-10 ms) Fig. 4a Maximum forward current at case temperature Fig. 5 Power dissipation versus onstate current and ambient temperature (per thyristor or diode) Fig. 6 Three phase rectifier bridge: Power dissipation versus direct output current and ambient temperature © 2000 IXYS All rights reserved 3-4 MDC 56 MCC 56 MCD 56 Fig. 7 Three phase AC-controller: Power dissipation versus RMS output current and ambient temperature Fig. 8 Transient thermal impedance junction to case (per thyristor or diode) RthJC for various conduction angles d: d DC 180° 120° 60° 30° RthJC (K/W) 0.45 0.47 0.49 0.505 0.52 Constants for ZthJC calculation: i 1 2 3 Rthi (K/W) 0.014 0.026 0.41 ti (s) 0.015 0.0095 0.175 Fig. 9 Transient thermal impedance junction to heatsink (per thyristor or diode) RthJK for various conduction angles d: d DC 180° 120° 60° 30° RthJK (K/W) 0.65 0.67 0.69 0.705 0.72 Constants for ZthJK calculation: i 1 2 3 4 © 2000 IXYS All rights reserved Rthi (K/W) 0.014 0.026 0.41 0.2 ti (s) 0.015 0.0095 0.175 0.67 4-4