MCD56-18IO1B

MCD56-18io1B Thyristor \ Diode Module VRRM = 2x 1800 V I TAV = 60 A VT = 1.24 V Phase leg Part number MCD56-18io1B Backside: isolated 3 1 5 4 2 Features / Advantages: Applications: Package: TO-240AA ● Thyristor for line frequency ● Planar passivated chip ● Long-term stability ● Direct Copper Bonded Al2O3-ceramic ● Line rectifying 50/60 Hz ● Softstart AC motor control ● DC Motor control ● Power converter ● AC power control ● Lighting and temperature control ● Isolation Voltage: 4800 V~ ● Industry standard outline ● RoHS compliant ● Soldering pins for PCB mounting ● Base plate: DCB ceramic ● Reduced weight ● Advanced power cycling Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20200701c MCD56-18io1B Ratings Rectifier Conditions Symbol VRSM/DSM Definition max. non-repetitive reverse/forward blocking voltage TVJ = 25°C VRRM/DRM max. repetitive reverse/forward blocking voltage TVJ = 25°C 1800 I R/D reverse current, drain current VT forward voltage drop min. typ. VR/D = 1800 V TVJ = 25°C 200 µA TVJ = 125°C 5 mA I T = 100 A TVJ = 25°C 1.26 V 1.57 V 1.24 V TVJ = 125 °C I T = 100 A I T = 200 A I TAV average forward current TC = 85 °C I T(RMS) RMS forward current 180° sine VT0 threshold voltage rT slope resistance R thJC thermal resistance junction to case for power loss calculation only RthCH thermal resistance case to heatsink total power dissipation I TSM max. forward surge current I²t value for fusing V VR/D = 1800 V I T = 200 A Ptot max. Unit 1900 V 1.62 V T VJ = 125 °C 60 A 94 A TVJ = 125 °C 0.85 V 3.7 mΩ 0.45 K/W 0.2 K/W TC = 25°C 222 W t = 10 ms; (50 Hz), sine TVJ = 45°C 1.50 kA t = 8,3 ms; (60 Hz), sine VR = 0 V 1.62 kA t = 10 ms; (50 Hz), sine TVJ = 125 °C 1.28 kA t = 8,3 ms; (60 Hz), sine VR = 0 V 1.38 kA t = 10 ms; (50 Hz), sine TVJ = 45°C 11.3 kA²s t = 8,3 ms; (60 Hz), sine VR = 0 V 10.9 kA²s t = 10 ms; (50 Hz), sine TVJ = 125 °C 8.13 kA²s t = 8,3 ms; (60 Hz), sine VR = 0 V CJ junction capacitance VR = 400 V f = 1 MHz TVJ = 25°C PGM max. gate power dissipation t P = 30 µs T C = 125 °C 7.87 kA²s 74 t P = 300 µs pF 10 W 5 W 0.5 W PGAV average gate power dissipation (di/dt) cr critical rate of rise of current TVJ = 125 °C; f = 50 Hz repetitive, IT = 150 A t P = 200 µs; di G /dt = 0.45 A/µs; (dv/dt)cr critical rate of rise of voltage V = ⅔ VDRM VGT gate trigger voltage VD = 6 V TVJ = 25 °C TVJ = -40 °C 1.6 V I GT gate trigger current VD = 6 V TVJ = 25 °C 100 mA TVJ = -40 °C 200 mA VGD gate non-trigger voltage TVJ = 125°C 0.2 V I GD gate non-trigger current 10 mA IL latching current TVJ = 25 °C 450 mA I G = 0.45 A; V = ⅔ VDRM non-repet., I T = 150 A/µs 60 A 500 A/µs 1000 V/µs TVJ = 125°C R GK = ∞; method 1 (linear voltage rise) VD = ⅔ VDRM tp = 10 µs 1.5 V IG = 0.45 A; di G /dt = 0.45 A/µs IH holding current VD = 6 V R GK = ∞ TVJ = 25 °C 200 mA t gd gate controlled delay time VD = ½ VDRM TVJ = 25 °C 2 µs tq turn-off time IG = 0.45 A; di G /dt = 0.45 A/µs VR = 100 V; I T = 150A; V = ⅔ VDRM TVJ =100 °C di/dt = 10 A/µs dv/dt = IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved 150 µs 20 V/µs t p = 200 µs Data according to IEC 60747and per semiconductor unless otherwise specified 20200701c MCD56-18io1B Package Ratings TO-240AA Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -40 typ. max. 200 Unit A -40 125 °C -40 100 °C 125 °C 81 Weight g MD mounting torque 2.5 4 Nm MT terminal torque 2.5 4 Nm d Spp/App creepage distance on surface | striking distance through air d Spb/Apb VISOL t = 1 minute Ordering Number MCD56-18io1B Equivalent Circuits for Simulation I V0 13.0 16.0 t = 1 second isolation voltage Ordering Standard terminal to terminal terminal to backside R0 50/60 Hz, RMS; IISOL ≤ 1 mA Marking on Product MCD56-18io1B * on die level Delivery Mode Box mm 16.0 mm 4800 V 4000 V Quantity 36 Code No. 494216 T VJ = 125°C Thyristor V 0 max threshold voltage 0.85 V R0 max slope resistance * 2.5 mΩ IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved 9.7 Data according to IEC 60747and per semiconductor unless otherwise specified 20200701c MCD56-18io1B Outlines TO-240AA 3 IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved 1 5 4 2 Data according to IEC 60747and per semiconductor unless otherwise specified 20200701c MCD56-18io1B Thyristor 1400 105 ITSM = 50 Hz IFSM = 80% VRRM 1200 120 VR = 0 V 1000 ITSM 80 I2dt 800 600 60 [A] [A2s] TVJ = 45°C ITAVM TVJ = 45°C 104 [A] DC 180 ° sin 120 ° 60 ° 30 ° 100 TVJ = 125°C 40 400 TVJ = 125°C 20 200 103 0 0.01 0.1 1 0 1 10 t [s] 0 25 50 Fig. 3 Max. forward current at case temperature 2 Fig. 1 Surge overload current ITSM, IFSM: Crest value, t: duration Fig. 2 I t versus time (1-10 ms) 120 10 RthKA K/W 0.8 1 1.2 1.5 2 2.5 3 4 100 80 Ptot 60 40 1: IGT, TVJ = 125°C 2: IGT, TVJ = 25°C 3: IGT, TVJ = -40°C 5 VG 2 1 DC 180 ° sin 120 ° 60 ° 30 ° [W] 75 100 125 150 TC [°C] t [ms] 3 1 [V] 20 4: PGAV = 0.5 W 5: PGM = 5 W 6: PGM = 10 W IGD , T4 = 125°C 0 0 20 40 60 80 0 25 50 ITAVM [A] 75 100 125 0.1 100 150 101 102 103 104 IG [mA] Ta [°C] Fig. 4 Power dissipation vs. on-state current & ambient temperature (per thyristor or diode) Fig. 5 Gate trigger characteristics 500 100 TVJ = 25°C RthKA K/W 0.1 0.15 0.2 0.25 0.3 0.4 0.5 0.6 400 Circuit B6 3x MCC56 or Ptot 300 [W] 6 4 3x MCD56 10 tgd [µs] 200 limit 1 typ. 100 0 0 40 80 120 160 0 25 IdAVM [A] 50 75 100 125 Ta [°C] Fig. 6 Three phase rectifier bridge: Power dissipation versus direct output current and ambient temperature IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved 150 0.1 0.01 0.1 1 10 IG [A] Fig. 7 Gate trigger delay time Data according to IEC 60747and per semiconductor unless otherwise specified 20200701c MCD56-18io1B Rectifier Circuit W3 3x MCC56 or 3x MCD56 500 RthKA K/W 0.1 0.15 0.2 0.25 0.3 0.4 0.5 0.6 400 Ptot 300 [W] 200 100 0 0 20 40 60 80 100 120 0 25 IRMS [A] 50 75 100 125 150 Ta [°C] Fig. 8 Three phase AC-controller: Power dissipation versus RMS output current and ambient temperature 0.6 RthJC for various conduction angles d: 0.5 ZthJC 0.4 30° 60° 120° 180° DC 0.3 [K/W] d RthJC [K/W] DC 0.450 180° 0.470 120° 0.490 60° 0.505 30° 0.520 0.2 Constants for ZthJC calculation: 0.1 0.0 10-2 10-1 100 101 i Rthi [K/W] 1 0.014 2 0.026 3 0.410 ti [s] 0.0150 0.0095 0.1750 t [s] Fig. 9 Transient thermal impedance junction to case (per thyristor/diode) 0.8 RthJK for various conduction angles d: ZthJK 0.4 [K/W] d RthJK [K/W] DC 0.650 180° 0.670 120° 0.690 60° 0.705 30° 0.720 30° 60° 120° 180° DC 0.6 Constants for ZthJK calculation: 0.2 0.0 10-2 10-1 100 101 i Rthi [K/W] 1 0.014 2 0.026 3 0.410 4 0.200 ti [s] 0.0150 0.0095 0.1750 0.6700 t [s] Fig. 10 Transient thermal impedance junction to heatsink (per thyristor/diode) IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20200701c