MCD56

MCC 56 MCD 56 Thyristor Modules Thyristor/Diode Modules ITRMS = 2x100 A ITAVM = 2x64 A VRRM = 800-1800 V TO-240 AA 2 3 6 7 4 1 5 VRSM VDSM V 900 1300 1500 1700 1900 Symbol ITRMS, IFRMS ITAVM, IFAVM ITSM, IFSM VRRM VDRM V 800 1200 1400 1600 1800 Type Version MCC MCC MCC MCC MCC 56-08 56-12 56-14 56-16 56-18 1B io1 B / io1 B / io1 B / io1 B / io1 B / 8B io8 B io8 B io8 B io8 B io8 B Version MCD MCD MCD MCD MCD 56-08 56-12 56-14 56-16 56-18 1B 8B io1 B / io8 B io1 B / io8 B io1 B / io8 B io1 B / io8 B io1 B / io8 B 3 671 542 Conditions TVJ = TVJM TC = 83°C; 180° sine TC = 85°C; 180° sine TVJ = 45°C; VR = 0 TVJ = TVJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine Maximum Ratings 100 64 60 1500 1600 1350 1450 11 200 10 750 9100 8830 150 A A A A A A A A2s A2s As A2s A/µs 2 MCC Version 1 B 3 1 5 42 MCD Version 1 B ∫i2dt TVJ = 45°C VR = 0 TVJ = TVJM VR = 0 3 6 1 52 MCC Version 8 B 3 1 52 (di/dt)cr TVJ = TVJM repetitive, IT = 150 A f =50 Hz, tP = 200 µs VD = 2/3 VDRM IG = 0.45 A diG/dt = 0.45 A/µs non repetitive, IT = ITAVM 500 1000 10 5 0.5 10 -40...+125 125 -40...+125 A/µs V/µs W W W V °C °C °C V~ V~ MCD Version 8 B Features • International standard package, JEDEC TO-240 AA • Direct copper bonded Al2O3 -ceramic base plate • Planar passivated chips • Isolation voltage 3600 V~ • UL registered, E 72873 • Gate-cathode twin pins for version 1B Applications • DC motor control • Softstart AC motor controller • Light, heat and temperature control Advantages • Space and weight savings • Simple mounting with two screws • Improved temperature and power cycling • Reduced protection circuits 419 (dv/dt)cr PGM PGAV VRGM TVJ TVJM Tstg VISOL Md Weight TVJ = TVJM; VDR = 2/3 VDRM RGK = ∞; method 1 (linear voltage rise) TVJ = TVJM; IT = ITAVM; tP = 30 µs tP = 300 µs 50/60 Hz, RMS; IISOL ≤ 1 mA; t = 1 min t=1s 3000 3600 Mounting torque (M5) Terminal connection torque (M5) Typical including screws 2.5-4.0/22-35 Nm/lb.in. 2.5-4.0/22-35 Nm/lb.in. 90 g Data according to IEC 60747 and refer to a single thyristor/diode unless otherwise stated. IXYS reserves the right to change limits, test conditions and dimensions © 2004 IXYS All rights reserved 1-4 MCC 56 MCD 56 Symbol IRRM, IDRM VT, VF VT0 rT VGT IGT VGD IGD IL IH tgd tq QS IRM RthJC RthJK dS dA a Conditions TVJ = TVJM; VR = VRRM; VD = VDRM IT /IF = 200 A; TVJ = 25°C For power-loss calculations only (TVJ = 125°C) VD = 6 V; VD = 6 V; TVJ TVJ TVJ TVJ = = = = 25°C -40°C 25°C -40°C Characteristic Values 5 1.57 0.85 3.7 1.5 1.6 100 200 0.2 10 450 200 2 typ. 150 100 24 other values see Fig. 8/9 0.45 0.225 0.65 0.325 12.7 9.6 50 mA V V mΩ V V mA mA V mA mA IGD, TVJ = 125°C 4: PGAV = 0.5 W 5: PGM = 5W 6: PGM = 10 W 102 103 IG 3 1 1 4 2 5 6 VG 10 1: IGT, TVJ = 125°C V 2: IGT, TVJ = 25°C 3: IGT, TVJ = -40°C TVJ = TVJM; VD = 2/3 VDRM TVJ = 25°C; tP = 10 µs; VD = 6 V IG = 0.45 A; diG/dt = 0.45 A/µs TVJ = 25°C; VD = 6 V; RGK = ∞ TVJ = 25°C; VD = ½ VDRM IG = 0.45 A; diG/dt = 0.45 A/µs TVJ = TVJM; IT = 150 A, tP = 200 µs; -di/dt = 10 A/µs VR = 100 V; dv/dt = 20 V/µs; VD = 2/3 VDRM TVJ = TVJM; IT, IF = 50 A, -di/dt = 3 A/µs per per per per thyristor/diode; DC current module thyristor/diode; DC current module mA µs µs 0.1 100 101 mA 104 Fig. 1 Gate trigger characteristics 1000 µC A K/W K/W K/W K/W mm mm m/s2 tgd TVJ = 25°C µs typ. 100 Limit Creepage distance on surface Strike distance through air Maximum allowable acceleration 10 Optional accessories for module-type MCC 56 version 1 B Keyed gate/cathode twin plugs with wire length = 350 mm, gate = yellow, cathode = red Type ZY 200L (L = Left for pin pair 4/5) UL 758, style 1385, Type ZY 200R (R = right for pin pair 6/7) CSA class 5851, guide 460-1-1 1 10 mA IG 100 1000 Fig. 2 Gate trigger delay time Dimensions in mm (1 mm = 0.0394") MCC / MCD / MDC Version 1 B MCC Version 8 B MCD Version 8 B 2-4 © 2004 IXYS All rights reserved 419 Version 1 or 8 without B in typ designation = without insert in mountig holes MCC 56 MCD 56 Fig. 3 Surge overload current ITSM, IFSM: Crest value, t: duration Fig. 4 ∫i2dt versus time (1-10 ms) Fig. 4a Maximum forward current at case temperature Fig. 5 Power dissipation versus onstate current and ambient temperature (per thyristor or diode) Fig. 6 Three phase rectifier bridge: Power dissipation versus direct output current and ambient temperature © 2004 IXYS All rights reserved 3-4 419 MCC 56 MCD 56 Fig. 7 Three phase AC-controller: Power dissipation versus RMS output current and ambient temperature Fig. 8 Transient thermal impedance junction to case (per thyristor or diode) RthJC for various conduction angles d: d DC 180° 120° 60° 30° RthJC (K/W) 0.45 0.47 0.49 0.505 0.52 Constants for ZthJC calculation: i 1 2 3 Rthi (K/W) 0.014 0.026 0.41 ti (s) 0.015 0.0095 0.175 Fig. 9 Transient thermal impedance junction to heatsink (per thyristor or diode) RthJK for various conduction angles d: d DC 180° 120° 60° 30° RthJK (K/W) 0.65 0.67 0.69 0.705 0.72 Constants for ZthJK calculation: i 1 2 3 4 Rthi (K/W) 0.014 0.026 0.41 0.2 ti (s) 0.015 0.0095 0.175 0.67 419 4-4 © 2004 IXYS All rights reserved