MCMA200PD1600YB

MCMA200PD1600YB Thyristor \ Diode Module VRRM = 2x 1600 V I TAV = 200 A VT = 1.12 V Phase leg Part number MCMA200PD1600YB Backside: isolated 3 1 5 4 2 Features / Advantages: Applications: Package: Y4 ● Thyristor for line frequency ● Planar passivated chip ● Long-term stability ● Direct Copper Bonded Al2O3-ceramic ● Line rectifying 50/60 Hz ● Softstart AC motor control ● DC Motor control ● Power converter ● AC power control ● Lighting and temperature control ● Isolation Voltage: 3600 V~ ● Industry standard outline ● RoHS compliant ● Soldering pins for PCB mounting ● Base plate: DCB ceramic ● Reduced weight ● Advanced power cycling Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20201211a MCMA200PD1600YB Ratings Thyristor Conditions Symbol VRSM/DSM Definition max. non-repetitive reverse/forward blocking voltage TVJ = 25°C VRRM/DRM max. repetitive reverse/forward blocking voltage TVJ = 25°C 1600 I R/D reverse current, drain current VT forward voltage drop min. typ. VR/D = 1600 V TVJ = 25°C 300 µA TVJ = 125°C 10 mA I T = 200 A TVJ = 25°C 1.17 V 1.40 V 1.12 V TVJ = 125 °C I T = 200 A I T = 400 A I TAV average forward current TC = 85 °C I T(RMS) RMS forward current 180° sine VT0 threshold voltage rT slope resistance R thJC thermal resistance junction to case for power loss calculation only RthCH thermal resistance case to heatsink total power dissipation I TSM max. forward surge current I²t value for fusing V VR/D = 1600 V I T = 400 A Ptot max. Unit 1700 V 1.41 V T VJ = 140 °C 200 A 315 A TVJ = 140 °C 0.83 V 1.43 mΩ 0.17 K/W 0.09 K/W TC = 25°C 680 W t = 10 ms; (50 Hz), sine TVJ = 45°C 6.00 kA t = 8,3 ms; (60 Hz), sine VR = 0 V 6.48 kA t = 10 ms; (50 Hz), sine TVJ = 140 °C 5.10 kA t = 8,3 ms; (60 Hz), sine VR = 0 V 5.51 kA t = 10 ms; (50 Hz), sine TVJ = 45°C 180.0 kA²s t = 8,3 ms; (60 Hz), sine VR = 0 V 174.7 kA²s t = 10 ms; (50 Hz), sine TVJ = 140 °C 130.1 kA²s t = 8,3 ms; (60 Hz), sine VR = 0 V CJ junction capacitance VR = 400 V f = 1 MHz TVJ = 25°C PGM max. gate power dissipation t P = 30 µs T C = 140 °C 126.3 kA²s 273 t P = 500 µs pF 120 W 60 W 8 W PGAV average gate power dissipation (di/dt) cr critical rate of rise of current TVJ = 140 °C; f = 50 Hz repetitive, IT = 600 A t P = 200 µs; di G /dt = 0.5 A/µs; (dv/dt)cr critical rate of rise of voltage V = ⅔ VDRM VGT gate trigger voltage VD = 6 V TVJ = 25 °C TVJ = -40 °C 2.6 V I GT gate trigger current VD = 6 V TVJ = 25 °C 150 mA TVJ = -40 °C 200 mA VGD gate non-trigger voltage TVJ = 125°C 0.2 V I GD gate non-trigger current 10 mA IL latching current TVJ = 25 °C 300 mA IG = 0.5 A; V = ⅔ VDRM 100 A/µs non-repet., I T = 200 A 1000 A/µs 1000 V/µs TVJ = 140°C R GK = ∞; method 1 (linear voltage rise) VD = ⅔ VDRM tp = 30 µs IG = 0.5 A; di G /dt = 2.5 V 0.5 A/µs IH holding current VD = 6 V R GK = ∞ TVJ = 25 °C 200 mA t gd gate controlled delay time VD = ½ VDRM TVJ = 25 °C 2 µs tq turn-off time IG = 0.5 A; di G /dt = 0.5 A/µs VR = 100 V; I T = 200A; V = ⅔ VDRM TVJ =125 °C di/dt = 10 A/µs dv/dt = IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved 150 µs 20 V/µs t p = 200 µs Data according to IEC 60747and per semiconductor unless otherwise specified 20201211a MCMA200PD1600YB Package Ratings Y4 Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -40 max. 300 Unit A -40 140 °C -40 125 °C 125 °C 131 Weight MD mounting torque MT terminal torque d Spp/App terminal to terminal 14.0 terminal to backside 16.0 creepage distance on surface | striking distance through air d Spb/Apb VISOL typ. t = 1 second isolation voltage t = 1 minute 50/60 Hz, RMS; IISOL ≤ 1 mA g 2.25 2.75 Nm 4.5 5.5 Nm 10.0 mm 16.0 mm 3600 V 3000 V Part description Date Code (DC) + Production Index (PI) M C M A 200 PD 1600 YB Circuit yywwAA Part Number Lot.No: xxxxxx Data Matrix: part no. (1-19), DC + PI (20-25), lot.no.# (26-31), blank (32), serial no.# (33-36) Ordering Standard Ordering Number MCMA200PD1600YB Equivalent Circuits for Simulation I V0 R0 = = = = = = = = Marking on Product MCMA200PD1600YB * on die level Module Thyristor (SCR) Thyristor (up to 1800V) Current Rating [A] Phase leg Reverse Voltage [V] Y4-M6 Delivery Mode Box Code No. 527295 T VJ = 140°C Thyristor V 0 max threshold voltage 0.83 V R0 max slope resistance * 0.8 mΩ IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved Quantity 6 Data according to IEC 60747and per semiconductor unless otherwise specified 20201211a MCMA200PD1600YB Outlines Y4 3 IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved 1 5 4 2 Data according to IEC 60747and per semiconductor unless otherwise specified 20201211a MCMA200PD1600YB Thyristor 600 106 5000 VR = 0 V 50 Hz, 80% VRRM 500 4000 400 ITSM IT TVJ = 45°C I 2t TVJ = 45°C 105 300 [A] [A] 200 2 TVJ = 125°C TVJ = 140°C 140°C 100 TVJ = 140°C [A s] 3000 TVJ = 25°C 0 0.0 104 2000 0.5 1.0 1.5 2.0 0.01 0.1 VT [V] 1 ITAVM 4: PGM = 20 W 5: PGM = 60 W 6: PGM = 120 W 100 101 typ. 0.1 0.01 102 [A] lim. 1.0 10-1 240 TVJ = 125°C [µs] 10-2 dc = 1 0.5 0.4 0.33 0.17 0.08 160 [V] 0.1 10-3 Fig. 3 I t vs. time per thyristor tgd 5 4 4 5 6 7 8 910 320 10.0 6 2 1 3 t [ms] 100.0 3 IGD, TVJ = 140°C 2 2 Fig. 2 Surge overload current vs. time per thyristor 1: IGT, TVJ = 125°C 2: IGT, TVJ = 25°C 3: IGT, TVJ = -40°C VG 1 t [s] Fig. 1 Forward current vs. voltage drop per thyristor 10 1 80 0 0.10 1.00 10.00 0 40 IG [A] IG [A] Fig. 5 Gate controlled delay time tgd Fig. 4 Gate voltage & gate current 80 120 160 Tcase [°C] Fig. 6 Max. forward current vs. case temperature per thyr. 0.20 300 250 dc = 1 0.5 200 0.4 0.33 Ptot 0.17 150 0.08 RthHA 0.2 0.4 0.6 0.8 1.0 2.0 i Rthi (K/W) 1 0.0080 2 0.0130 3 0.0160 4 0.0730 5 0.0600 0.16 0.12 ti (s) 0.00010 0.02000 0.13000 0.25000 1.10000 ZthJC [W] 0.08 100 [K/W] 0.04 50 0.00 0 0 50 100 150 200 IT(AV) [A] 0 70 Tamb [°C] Fig. 7 Power dissipation vs. forward current and ambient temperature per thyristor IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved 140 1 10 100 1000 10000 t [ms] Fig. 8 Transient thermal impedance junction to case vs. time per thyristor Data according to IEC 60747and per semiconductor unless otherwise specified 20201211a