MCMA265PD1600KB

MCMA265PD1600KB preliminary Thyristor \ Diode Module VRRM = 2x 1600 V I TAV = 260 A VT = 1.15 V Phase leg Part number MCMA265PD1600KB Backside: isolated 3 1 5 4 2 Features / Advantages: Applications: Package: Y1 ● Thyristor for line frequency ● Planar passivated chip ● Long-term stability ● Direct Copper Bonded Al2O3-ceramic ● Line rectifying 50/60 Hz ● Softstart AC motor control ● DC Motor control ● Power converter ● AC power control ● Lighting and temperature control ● Isolation Voltage: 4800 V~ ● Industry standard outline ● RoHS compliant ● Soldering pins for PCB mounting ● Base plate: Copper internally DCB isolated ● Advanced power cycling Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20191209d MCMA265PD1600KB preliminary Ratings Rectifier Conditions Symbol VRSM/DSM Definition max. non-repetitive reverse/forward blocking voltage TVJ = 25°C VRRM/DRM max. repetitive reverse/forward blocking voltage TVJ = 25°C 1600 I R/D reverse current, drain current VT forward voltage drop min. typ. VR/D = 1600 V TVJ = 25°C 300 µA TVJ = 140°C 30 mA I T = 300 A TVJ = 25°C 1.19 V 1.46 V 1.15 V TVJ = 125 °C I T = 300 A I T = 600 A I TAV average forward current TC = 85 °C I T(RMS) RMS forward current 180° sine VT0 threshold voltage rT slope resistance R thJC thermal resistance junction to case for power loss calculation only RthCH thermal resistance case to heatsink total power dissipation I TSM max. forward surge current I²t value for fusing V VR/D = 1600 V I T = 600 A Ptot max. Unit 1700 V 1.44 V T VJ = 140 °C 260 A 408 A TVJ = 140 °C 0.80 V 0.75 mΩ 0.16 K/W 0.04 K/W TC = 25°C 720 W t = 10 ms; (50 Hz), sine TVJ = 45°C 8.50 kA t = 8,3 ms; (60 Hz), sine VR = 0 V 9.18 kA t = 10 ms; (50 Hz), sine TVJ = 140 °C 7.23 kA t = 8,3 ms; (60 Hz), sine VR = 0 V 7.81 kA t = 10 ms; (50 Hz), sine TVJ = 45°C 361.3 kA²s t = 8,3 ms; (60 Hz), sine VR = 0 V 350.6 kA²s t = 10 ms; (50 Hz), sine TVJ = 140 °C 261.0 kA²s t = 8,3 ms; (60 Hz), sine VR = 0 V CJ junction capacitance VR = 400 V f = 1 MHz TVJ = 25°C PGM max. gate power dissipation t P = 30 µs T C = 140 °C 253.4 kA²s 366 t P = 500 µs pF 120 W 60 W 20 W PGAV average gate power dissipation (di/dt) cr critical rate of rise of current TVJ = 140 °C; f = 50 Hz repetitive, IT = 750 A t P = 200 µs; di G /dt = 1 A/µs; (dv/dt)cr critical rate of rise of voltage V = ⅔ VDRM VGT gate trigger voltage VD = 6 V TVJ = 25 °C TVJ = -40 °C 3 V I GT gate trigger current VD = 6 V TVJ = 25 °C 150 mA TVJ = -40 °C 220 mA VGD gate non-trigger voltage TVJ = 140°C 0.25 V I GD gate non-trigger current 10 mA IL latching current TVJ = 25 °C 200 mA IG = 1 A; V = ⅔ VDRM 100 A/µs non-repet., I T = 268 A 500 A/µs 1000 V/µs TVJ = 140°C R GK = ∞; method 1 (linear voltage rise) VD = ⅔ VDRM tp = 30 µs 2 V IG = 0.45 A; di G /dt = 0.45 A/µs IH holding current VD = 6 V R GK = ∞ TVJ = 25 °C 150 mA t gd gate controlled delay time VD = ½ VDRM TVJ = 25 °C 2 µs tq turn-off time IG = 1 A; di G /dt = di/dt = 10 A/µs dv/dt = IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved 1 A/µs VR = 100 V; I T = 300A; V = ⅔ VDRM TVJ =125 °C 200 µs 50 V/µs t p = 200 µs Data according to IEC 60747and per semiconductor unless otherwise specified 20191209d MCMA265PD1600KB preliminary Package Ratings Y1 Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -40 typ. max. 600 Unit A -40 140 °C -40 125 °C 125 °C 680 Weight g MD mounting torque 4.5 7 Nm MT terminal torque 11 13 Nm d Spp/App terminal to terminal creepage distance on surface | striking distance through air terminal to backside d Spb/Apb VISOL t = 1 second isolation voltage t = 1 minute Production Index (PI) Date Code (DC) 50/60 Hz, RMS; IISOL ≤ 1 mA 16.0 mm 16.0 mm 4800 V 4000 V Part description M C M A 265 PD 1600 KB Circuit yywwAA Part Number Lot.No: xxxxxx = = = = = = = = Module Thyristor (SCR) Thyristor (up to 1800V) Current Rating [A] Phase leg Reverse Voltage [V] Y1-CU Data Matrix: part no. (1-19), DC + PI (20-25), lot.no.# (26-31), blank (32), serial no.# (33-36) Ordering Standard Ordering Number MCMA265PD1600KB Equivalent Circuits for Simulation I V0 R0 Marking on Product MCMA265PD1600KB * on die level Delivery Mode Box Code No. 509202 T VJ = 140°C Thyristor V 0 max threshold voltage 0.8 V R0 max slope resistance * 0.51 mΩ IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Quantity 3 Data according to IEC 60747and per semiconductor unless otherwise specified 20191209d MCMA265PD1600KB preliminary Outlines Y1 3x M8 43 45 10 32 +0 -1,9 52 +0 -1,4 49 2 15 ±1 2.8 x 0.8 28.5 1 2 38 50 35 5 22.5 45 67 18 20 3 6.2 80 92 115 Optional accessories for modules Keyed gate/cathode twin plugs with wire length = 350 mm, gate = white, cathode = red Type ZY 180L (L = Left for pin pair 4/5) U L 758, style 3751 3 IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved 1 5 4 2 Data according to IEC 60747and per semiconductor unless otherwise specified 20191209d MCMA265PD1600KB preliminary Thyristor 800 10 100 TVJ = 25°C 700 1: IGT, TVJ = 130°C 2: IGT, T4 = 25°C 3: IGT, TVJ = -40°C 3 600 IT, IF 2 10 500 400 1 limit [µs] 300 4 1 VG tgd [A] 6 5 [V] typ. 1 200 TVJ = 125°C IGD, TVJ = 130°C 100 TVJ = 25°C 0 0.0 0.5 1.0 1.5 0.1 0.01 2.0 VT, VF [A] 0.10 1.00 0.1 10-3 10.00 10-1 IG [A] Fig. 1 Forward voltage drop 100 101 102 IG [A] Fig. 2 Gate trigger delay time 0.25 Fig. 3 Gate trigger characteristics RthJC for various conduction angles d: 0.20 ZthJC 0.15 [K/W] 30° 60° 120° 180° DC 0.10 0.05 0.00 10-3 10-2 4: PGM = 20 W 5: PGM = 60 W 6: PGM = 120 W 10-2 10-1 100 d RthJC (K/W) DC 180° 120° 60° 30° 0.157 0.168 0.177 0.200 0.243 Constants for Zth calculation: i 1 2 3 4 101 Rthi (K/W) 0.0076 0.0406 0.0944 0.0147 ti (s) 0.0054 0.098 0.54 12 102 t [s] Fig. 4 Transient thermal impedance junction to case (per thyristor/diode) IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20191209d