MCMA35PD1200TB

MCMA35PD1200TB Thyristor \ Diode Module VRRM = 2x 1200 V I TAV = 35 A VT = 1.22 V Phase leg Part number MCMA35PD1200TB Backside: isolated 3 1 5 4 2 Features / Advantages: Applications: Package: TO-240AA ● Thyristor for line frequency ● Planar passivated chip ● Long-term stability ● Direct Copper Bonded Al2O3-ceramic ● Line rectifying 50/60 Hz ● Softstart AC motor control ● DC Motor control ● Power converter ● AC power control ● Lighting and temperature control ● Isolation Voltage: 4800 V~ ● Industry standard outline ● RoHS compliant ● Soldering pins for PCB mounting ● Base plate: DCB ceramic ● Reduced weight ● Advanced power cycling Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20191205d MCMA35PD1200TB Ratings Rectifier Conditions Symbol VRSM/DSM Definition max. non-repetitive reverse/forward blocking voltage TVJ = 25°C VRRM/DRM max. repetitive reverse/forward blocking voltage TVJ = 25°C 1200 I R/D reverse current, drain current VT forward voltage drop TVJ = 25°C 100 µA 6 mA TVJ = 25°C 1.23 V 1.50 V 1.22 V IT = 35 A IT = 70 A IT = 35 A IT = 70 A I T(RMS) RMS forward current 180° sine VT0 threshold voltage rT slope resistance R thJC thermal resistance junction to case TVJ = 125 °C for power loss calculation only thermal resistance case to heatsink total power dissipation I TSM max. forward surge current value for fusing V TVJ = 140°C TC = 85 °C RthCH max. Unit 1300 V VR/D = 1200 V average forward current Ptot typ. VR/D = 1200 V I TAV I²t min. 1.56 V T VJ = 140 °C 35 A 55 A TVJ = 140 °C 0.87 V 9.8 mΩ 0.9 K/W 0.2 K/W TC = 25°C 120 W t = 10 ms; (50 Hz), sine TVJ = 45°C 520 A t = 8,3 ms; (60 Hz), sine VR = 0 V 560 A t = 10 ms; (50 Hz), sine TVJ = 140 °C 440 A t = 8,3 ms; (60 Hz), sine VR = 0 V 475 A t = 10 ms; (50 Hz), sine TVJ = 45°C 1.35 kA²s t = 8,3 ms; (60 Hz), sine VR = 0 V 1.31 kA²s t = 10 ms; (50 Hz), sine TVJ = 140 °C 970 A²s 940 A²s t = 8,3 ms; (60 Hz), sine VR = 0 V CJ junction capacitance VR = 400 V f = 1 MHz TVJ = 25°C PGM max. gate power dissipation t P = 30 µs T C = 140 °C 22 t P = 300 µs pF 10 W 5 W 0.5 W PGAV average gate power dissipation (di/dt) cr critical rate of rise of current TVJ = 140 °C; f = 50 Hz repetitive, IT = 105 A t P = 200 µs; di G /dt = 0.45 A/µs; (dv/dt)cr critical rate of rise of voltage V = ⅔ VDRM VGT gate trigger voltage VD = 6 V TVJ = 25 °C 1.5 TVJ = -40 °C 1.6 V I GT gate trigger current VD = 6 V TVJ = 25 °C 78 mA TVJ = -40 °C 200 mA VGD gate non-trigger voltage TVJ = 140°C 0.2 V I GD gate non-trigger current 5 mA IL latching current TVJ = 25 °C 450 mA I G = 0.45 A; V = ⅔ VDRM non-repet., I T = 150 A/µs 35 A 500 A/µs 1000 V/µs TVJ = 140°C R GK = ∞; method 1 (linear voltage rise) VD = ⅔ VDRM tp = 10 µs V IG = 0.45 A; di G /dt = 0.45 A/µs IH holding current VD = 6 V R GK = ∞ TVJ = 25 °C 200 mA t gd gate controlled delay time VD = ½ VDRM TVJ = 25 °C 2 µs tq turn-off time IG = 0.45 A; di G /dt = 0.45 A/µs VR = 100 V; I T = 35A; V = ⅔ VDRM TVJ =125 °C di/dt = 10 A/µs dv/dt = IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved 185 µs 20 V/µs t p = 200 µs Data according to IEC 60747and per semiconductor unless otherwise specified 20191205d MCMA35PD1200TB Package Ratings TO-240AA Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -40 typ. max. 80 Unit A -40 140 °C -40 125 °C 125 °C 81 Weight g MD mounting torque 2.5 4 Nm MT terminal torque 2.5 4 Nm d Spp/App d Spb/Apb VISOL terminal to terminal 13.0 terminal to backside 16.0 creepage distance on surface | striking distance through air t = 1 second isolation voltage t = 1 minute 50/60 Hz, RMS; IISOL ≤ 1 mA 9.7 mm 16.0 mm 4800 V 4000 V Part description M C M A 35 PD 1200 TB Ordering Standard Ordering Number MCMA35PD1200TB Equivalent Circuits for Simulation I V0 R0 Marking on Product MCMA35PD1200TB * on die level = = = = = = = = Module Thyristor (SCR) Thyristor (up to 1800V) Current Rating [A] Phase leg Reverse Voltage [V] TO-240AA-1B Delivery Mode Box Code No. 515940 T VJ = 140°C Thyristor V 0 max threshold voltage 0.87 V R0 max slope resistance * 8.6 mΩ IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Quantity 36 Data according to IEC 60747and per semiconductor unless otherwise specified 20191205d MCMA35PD1200TB Outlines TO-240AA 3 IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved 1 5 4 2 Data according to IEC 60747and per semiconductor unless otherwise specified 20191205d MCMA35PD1200TB Thyristor 100 104 500 VR = 0 V 50 Hz, 80% VRRM 80 400 60 ITSM IT 2 40 TVJ = 125°C 140°C [A] It TVJ = 45°C 300 TVJ = 45°C 103 [A] [A2s] TVJ = 140°C TVJ = 140°C 200 20 TVJ = 25°C 0 0.5 102 100 1.0 1.5 2.0 0.01 0.1 VT [V] 1 2 t [s] 4 5 6 7 8 910 t [ms] Fig. 3 I t versus time (1-10 s) 100.0 1: IGD, TVJ = 140°C 3 2 Fig. 2 Surge overload current ITSM: crest value, t: duration Fig. 1 Forward characteristics 10 1 100 2: IGT, TVJ = 25°C 3: IGT, TVJ = -40°C 5 3 4 1 TVJ = 25°C 10.0 2 VG dc = 1 0.5 0.4 0.33 0.17 0.08 80 6 ITAVM 60 tgd 1 [V] lim. [μs] 1.0 [A] 40 typ. 20 4: PGAV = 0.5 W 5: PGM = 5 W 6: PGM = 10 W 0.1 1 10 100 1000 0.1 0.01 10000 0 0.10 1.00 10.00 0 40 IG [A] IG [mA] Fig. 5 Gate controlled delay time tgd Fig. 4 Gate voltage & gate current 80 120 160 Tcase [°C] Fig. 6 Max. forward current at case temperature 1.00 60 dc = 1 0.5 0.4 0.33 0.17 0.08 Ptot 40 [W] RthHA 0.4 0.6 0.8 1.0 2.0 4.0 0.80 ZthJC 0.60 [K/W] i Rthi (K/W) 1 0.0200 2 0.0900 3 0.1900 4 0.3700 5 0.2300 0.40 20 0.20 ti (s) 0.0004 0.0090 0.0140 0.0600 0.3900 0.00 0 0 10 20 30 40 IT(AV) [A] 0 40 80 120 160 Fig. 7a Power dissipation versus direct output current Fig. 7b and ambient temperature IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved 1 10 100 1000 10000 t [ms] Tamb [°C] Fig. 8 Transient thermal impedance junction to case Data according to IEC 60747and per semiconductor unless otherwise specified 20191205d