MCNA120P2200TA

MCNA120P2200TA High Voltage Thyristor Module VRRM = 2x 2200 V I TAV = 120 A VT = 1.34 V Phase leg Part number MCNA120P2200TA Backside: isolated 3 6 7 1 5 4 2 Features / Advantages: Applications: Package: TO-240AA ● Thyristor for line frequency ● Planar passivated chip ● Long-term stability ● Direct Copper Bonded Al2O3-ceramic ● Line rectifying 50/60 Hz ● Softstart AC motor control ● DC Motor control ● Power converter ● AC power control ● Lighting and temperature control ● Isolation Voltage: 4800 V~ ● Industry standard outline ● RoHS compliant ● Soldering pins for PCB mounting ● Base plate: DCB ceramic ● Reduced weight ● Advanced power cycling Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20200204e MCNA120P2200TA Ratings Thyristor Conditions Symbol VRSM/DSM Definition max. non-repetitive reverse/forward blocking voltage TVJ = 25°C VRRM/DRM max. repetitive reverse/forward blocking voltage TVJ = 25°C 2200 I R/D reverse current, drain current VT forward voltage drop min. typ. VR/D = 2200 V TVJ = 25°C 100 µA TVJ = 140°C 10 mA I T = 120 A TVJ = 25°C 1.36 V 1.69 V 1.34 V TVJ = 125 °C I T = 120 A I T = 240 A I TAV average forward current TC = 85 °C I T(RMS) RMS forward current 180° sine VT0 threshold voltage rT slope resistance R thJC thermal resistance junction to case for power loss calculation only RthCH thermal resistance case to heatsink total power dissipation I TSM max. forward surge current I²t value for fusing V VR/D = 2200 V I T = 240 A Ptot max. Unit 2300 V 1.78 V T VJ = 140 °C 120 A 190 A TVJ = 140 °C 0.90 V 3.7 mΩ 0.22 K/W 0.2 K/W TC = 25°C 520 W t = 10 ms; (50 Hz), sine TVJ = 45°C 2.20 kA t = 8,3 ms; (60 Hz), sine VR = 0 V 2.38 kA t = 10 ms; (50 Hz), sine TVJ = 140 °C 1.87 kA t = 8,3 ms; (60 Hz), sine VR = 0 V 2.02 kA t = 10 ms; (50 Hz), sine TVJ = 45°C 24.2 kA²s t = 8,3 ms; (60 Hz), sine VR = 0 V 23.5 kA²s t = 10 ms; (50 Hz), sine TVJ = 140 °C 17.5 kA²s t = 8,3 ms; (60 Hz), sine VR = 0 V CJ junction capacitance VR = 700 V f = 1 MHz TVJ = 25°C PGM max. gate power dissipation t P = 30 µs T C = 140 °C 17.0 kA²s 83 t P = 300 µs pF 10 W 5 W 0.5 W PGAV average gate power dissipation (di/dt) cr critical rate of rise of current TVJ = 140 °C; f = 50 Hz repetitive, IT = 360 A t P = 200 µs; di G /dt = 0.45 A/µs; (dv/dt)cr critical rate of rise of voltage V = ⅔ VDRM VGT gate trigger voltage VD = 6 V TVJ = 25 °C TVJ = -40 °C 1.6 V I GT gate trigger current VD = 6 V TVJ = 25 °C 150 mA TVJ = -40 °C 200 mA VGD gate non-trigger voltage TVJ = 140°C 0.25 V I GD gate non-trigger current 10 mA IL latching current TVJ = 25 °C 200 mA I G = 0.45 A; V = ⅔ VDRM 150 A/µs non-repet., I T = 120 A 500 A/µs 1000 V/µs TVJ = 140°C R GK = ∞; method 1 (linear voltage rise) VD = ⅔ VDRM tp = 10 µs 1.5 V IG = 0.45 A; di G /dt = 0.45 A/µs IH holding current VD = 6 V R GK = ∞ TVJ = 25 °C 150 mA t gd gate controlled delay time VD = ½ VDRM TVJ = 25 °C 2 µs tq turn-off time IG = 0.45 A; di G /dt = 0.45 A/µs VR = 100 V; I T = 120A; V = ⅔ VDRM TVJ =125 °C di/dt = 10 A/µs dv/dt = IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved 185 µs 20 V/µs t p = 200 µs Data according to IEC 60747and per semiconductor unless otherwise specified 20200204e MCNA120P2200TA Package Ratings TO-240AA Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -40 typ. max. 200 Unit A -40 140 °C -40 125 °C 125 °C 81 Weight g MD mounting torque 2.5 4 Nm MT terminal torque 2.5 4 Nm d Spp/App d Spb/Apb VISOL terminal to terminal 13.0 terminal to backside 16.0 creepage distance on surface | striking distance through air t = 1 second isolation voltage t = 1 minute 50/60 Hz, RMS; IISOL ≤ 1 mA 9.7 mm 16.0 mm 4800 V 4000 V Part description M C N A 120 P 2200 TA Ordering Standard Ordering Number MCNA120P2200TA Equivalent Circuits for Simulation I V0 R0 Marking on Product MCNA120P2200TA * on die level = = = = = = = = Module Thyristor (SCR) High Voltage Thyristor (>= 2000V) Current Rating [A] Phase leg Reverse Voltage [V] TO-240AA-1B Delivery Mode Box Code No. 515076 T VJ = 140°C Thyristor V 0 max threshold voltage 0.9 V R0 max slope resistance * 2.5 mΩ IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved Quantity 36 Data according to IEC 60747and per semiconductor unless otherwise specified 20200204e MCNA120P2200TA Outlines TO-240AA 3 IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved 6 7 1 5 4 2 Data according to IEC 60747and per semiconductor unless otherwise specified 20200204e MCNA120P2200TA Thyristor 300 105 2000 VR = 0 V 50 Hz, 80% VRRM 250 200 1600 IT ITSM 150 TVJ = 125°C 140°C [A] 104 TVJ = 45°C [A] 100 TVJ = 45°C I 2t TVJ = 140°C 2 [A s] 1200 TVJ = 140°C 50 TVJ = 25°C 0 0.5 103 800 1.0 1.5 2.0 2.5 0.01 0.1 VT [V] 1000 3 4 5 6 7 8 910 t [ms] Fig. 3 I t versus time (1-10 s) 200 TVJ = 25°C dc = 1 0.5 0.4 0.33 0.17 0.08 160 typ. 100 2 3 1 5 [V] 2 2 Fig. 2 Surge overload current ITSM: crest value, t: duration 1: IGT, TVJ = 140°C 2: IGT, TVJ = 25°C 3: IGT, TVJ = -40°C VG 1 t [s] Fig. 1 Forward characteristics 10 1 Limit ITAVM120 tgd 6 1 [A] 80 [µs] 10 4 40 4: PGAV = 0.5 W 5: PGM = 5 W 6: PGM = 10 W IGD, TVJ = 140°C 0.1 1 10 100 1000 1 10 10000 0 100 1000 0 40 IG [mA] IG [mA] Fig. 4 Gate voltage & gate current 80 120 160 Tcase [°C] Fig. 6 Max. forward current at case temperature Fig. 5 Gate controlled delay time tgd 0.24 250 dc = 1 0.5 0.4 0.33 0.17 0.08 200 Ptot 150 [W] 0.20 RthHA 0.1 0.2 0.4 0.6 0.8 1.0 0.16 ZthJC 0.12 [K/W] 100 i Rthi (K/W) 1 0.0073 2 0.0128 3 0.1329 4 0.067 0.08 50 0.04 ti (s) 0.0001 0.0031 0.084 0.42 0.00 0 0 40 80 120 160 IT(AV) [A] 0 40 80 120 160 Fig. 7a Power dissipation versus direct output current Fig. 7b and ambient temperature IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved 1 10 100 1000 10000 t [ms] Tamb [°C] Fig. 8 Transient thermal impedance junction to case Data according to IEC 60747and per semiconductor unless otherwise specified 20200204e