MCNA120UI2200TED

MCNA120UI2200TED 3~ Rectifier High Voltage Thyristor Module Brake Chopper VRRM = 2200 V VCES = 1700 V I DAV = 120 A I C25 I FSM = 500 A VCE(sat) = = 113 A 2.5 V 3~ Rectifier Bridge, half-controlled (high-side) + Brake Unit + NTC Part number MCNA120UI2200TED Backside: isolated 24/25 34 36 38 30 29 45/46 NTC 3 6/7 10/11 14/15 21/22 41 40 48/49 Features / Advantages: Applications: Package: E2-Pack ● Thyristor/Standard Rectifier for line frequency ● Planar passivated chips ● Long-term stability ● Low forward voltage drop ● Leads suitable for PC board soldering ● Copper base plate with Direct Copper Bonded Al2O3-ceramic ● Improved temperature and power cycling ● 3~ Rectifier with brake unit for drive inverters ● Isolation Voltage: 3600 V~ ● Industry standard outline ● RoHS compliant ● Soldering pins for PCB mounting ● Height: 17 mm ● Base plate: Copper internally DCB isolated ● Advanced power cycling ● Phase Change Material available Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20191220e MCNA120UI2200TED Ratings Rectifier Conditions Symbol VRSM/DSM Definition max. non-repetitive reverse/forward blocking voltage TVJ = 25°C VRRM/DRM max. repetitive reverse/forward blocking voltage TVJ = 25°C 2200 I R/D reverse current, drain current VT forward voltage drop min. typ. VR/D = 2200 V TVJ = 25°C 50 µA TVJ = 125°C 10 mA IT = TVJ = 25°C 1.33 V 2.05 V 1.36 V IT = 40 A TVJ = 125 °C 40 A I T = 120 A TC = 80 °C bridge output current VT0 threshold voltage rT slope resistance R thJC thermal resistance junction to case rectangular RthCH thermal resistance case to heatsink total power dissipation I TSM max. forward surge current I²t value for fusing 2.38 V T VJ = 150 °C 120 A TVJ = 150 °C 0.83 V 13.6 mΩ d=⅓ for power loss calculation only Ptot V VR/D = 2200 V I T = 120 A I DAV max. Unit 2300 V 0.65 K/W 0.1 K/W TC = 25°C 190 W t = 10 ms; (50 Hz), sine TVJ = 45°C 500 A t = 8,3 ms; (60 Hz), sine VR = 0 V 540 A t = 10 ms; (50 Hz), sine TVJ = 150 °C 425 A t = 8,3 ms; (60 Hz), sine VR = 0 V 460 A t = 10 ms; (50 Hz), sine TVJ = 45°C 1.25 kA²s t = 8,3 ms; (60 Hz), sine VR = 0 V 1.22 kA²s t = 10 ms; (50 Hz), sine TVJ = 150 °C 905 A²s 880 A²s t = 8,3 ms; (60 Hz), sine VR = 0 V CJ junction capacitance VR = 700 V f = 1 MHz TVJ = 25°C PGM max. gate power dissipation t P = 30 µs T C = 150 °C 13 t P = 300 µs pF 10 W 5 W 0.5 W PGAV average gate power dissipation (di/dt) cr critical rate of rise of current TVJ = 150 °C; f = 50 Hz repetitive, IT = 120 A t P = 200 µs; di G /dt = 0.45 A/µs; (dv/dt)cr critical rate of rise of voltage V = ⅔ VDRM VGT gate trigger voltage VD = 6 V TVJ = 25 °C 1.4 TVJ = -40 °C 1.6 V I GT gate trigger current VD = 6 V TVJ = 25 °C 70 mA TVJ = -40 °C 150 mA VGD gate non-trigger voltage TVJ = 150°C 0.2 V I GD gate non-trigger current 5 mA IL latching current TVJ = 25 °C 150 mA I G = 0.45 A; V = ⅔ VDRM non-repet., I T = 150 A/µs 40 A 500 A/µs 1000 V/µs TVJ = 150°C R GK = ∞; method 1 (linear voltage rise) VD = ⅔ VDRM tp = 10 µs V IG = 0.45 A; di G /dt = 0.45 A/µs IH holding current VD = 6 V R GK = ∞ TVJ = 25 °C 100 mA t gd gate controlled delay time VD = ½ VDRM TVJ = 25 °C 2 µs tq turn-off time IG = 0.45 A; di G /dt = 0.45 A/µs VR = 100 V; I T = 40A; V = ⅔ VDRM TVJ =125 °C di/dt = 10 A/µs dv/dt = IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved 500 µs 20 V/µs t p = 200 µs Data according to IEC 60747and per semiconductor unless otherwise specified 20191220e MCNA120UI2200TED Ratings Brake IGBT + Diode Symbol VCES Definition Conditions min. VGES max. DC gate voltage ±20 V VGEM max. transient gate emitter voltage ±30 V I C25 collector current TC = 25°C 113 A TC = 80 °C 80 A 445 W 2.93 V TVJ = collector emitter voltage I C80 typ. 25°C TC = 25°C Ptot total power dissipation VCE(sat) collector emitter saturation voltage VGE(th) gate emitter threshold voltage I C = 3 mA; VGE = V CE TVJ = 25°C I CES collector emitter leakage current VCE = VCES ; V GE = 0 V TVJ = 25°C I GES gate emitter leakage current VGE = ±20 V Q G(on) total gate charge VCE = 900 V; VGE = 15 V; I C = 75 A t d(on) turn-on delay time IC = 75 A; V GE = 15 V TVJ = 25°C 2.5 TVJ = 125°C 3 5.2 5.8 TVJ = 125°C tr current rise time t d(off) turn-off delay time tf current fall time Eon turn-on energy per pulse Eoff turn-off energy per pulse RBSOA reverse bias safe operating area 6.4 V 0.6 mA 5 mA TVJ = 125°C 75 A VGE = ±15 V; R G = 18 Ω VGE = ±15 V; R G = 18 Ω SCSOA short circuit safe operating area t SC short circuit duration VCEK = 1700 V VCE = 720 V; VGE = ±15 I SC short circuit current RG = 18 Ω; non-repetitive R thJC thermal resistance junction to case R thCH thermal resistance case to heatsink nA 850 nC 270 ns 100 ns 700 ns 430 ns 34 mJ 17.5 mJ TVJ = 125°C VCEK = 1700 V I CM V 400 inductive load VCE = 900 V; IC = max. Unit 1700 V TVJ = 125°C 150 A 10 µs A 280 0.28 K/W K/W 0.1 Brake Diode VRRM max. repetitive reverse voltage TVJ = 25°C 1700 V I F25 forward current TC = 25°C 75 A TC = 80 °C 50 A TVJ = 25°C 2.45 V TVJ = 25°C 0.1 mA TVJ = 125°C 1 mA I F80 VF forward voltage I F = 60 A IR reverse current VR = VRRM Q rr reverse recovery charge VR = I RM max. reverse recovery current -di F /dt = trr reverse recovery time IF = E rec reverse recovery energy R thJC thermal resistance junction to case RthCH thermal resistance case to heatsink TVJ = 125°C IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved 900 V 600 A/µs 60 A; VGE = 0 V TVJ = 125°C 2.20 V 20 µC 46 A 1300 ns 10.5 mJ 0.65 K/W 0.1 Data according to IEC 60747and per semiconductor unless otherwise specified K/W 20191220e MCNA120UI2200TED Package Ratings E2-Pack Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -40 max. 40 Unit A -40 150 °C -40 125 °C 125 °C 176 Weight MD 3 mounting torque d Spp/App t = 1 minute 2D Barcode mm terminal to backside 12.0 mm 3600 V 3000 V 50/60 Hz, RMS; IISOL ≤ 1 mA M C N A 120 UI 2200 T ED UL Part Number Date Code Location Ordering Standard Nm Part description XXXXXXXXXX yywwZ Logo 6 6.0 t = 1 second isolation voltage g terminal to terminal creepage distance on surface | striking distance through air d Spb/Apb VISOL typ. Ordering Number MCNA120UI2200TED = = = = = = = = = Module Thyristor (SCR) High Voltage Thyristor (>= 2000V) Current Rating [A] 3~ Rectifier Bridge, half-controlled (high-side) + Brake Unit Reverse Voltage [V] Thermistor \ Temperature sensor E2-Pack Marking on Product MCNA120UI2200TED Delivery Mode Box Quantity 36 Code No. 510374 105 Temperature Sensor NTC Symbol Definition Conditions R25 resistance TVJ = 25° B25/50 temperature coefficient min. 4.75 typ. 5 3375 max. Unit 5.25 kΩ R K [ ] 104 103 Equivalent Circuits for Simulation I V0 R0 * on die level Thyristor Brake IGBT + Brake Diode T VJ = 150°C 102 0 V 0 max threshold voltage 0.83 1.17 1.34 V R0 max slope resistance * 10.5 25 15.2 mΩ IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved 25 50 75 100 TC [°C] 125 150 Typ. NTC resistance vs. temperature Data according to IEC 60747and per semiconductor unless otherwise specified 20191220e MCNA120UI2200TED Outlines E2-Pack D A 17 ±0,5 20,6 ±0,5 3,5 ±0,5 Ø6 Vor der Montage typ. 100 µm konvex über 75 mm Before mounting typ. 100 µm convex over 75 mm Ø 2,5 -0,3 Ø 2,1 -0,3 1,5 +0,3 Detail C Detail D 0,8 ±0,2 15° ±1° 6 Detail A 0,8 ±0,05 1,2 ±0,05 93 ±0,2 65,55 69,36 24 47 23 15.24 11.43 11,43 0 48 22 49 21 50 4 5 6 7 8 9 7.62 7,62 11,43 11.43 20 10 11 12 13 14 15 16 17 18 19 46,50 50.31 3 31,26 35,07 0 2 19,83 1 61,74 65,55 Index 41,90 50,31 42,69 46 32 ±0,2 Ø 5,5 +0,1 - 0,3 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 45 11 45 ±0,2 35,07 23,64 27,45 79,2 C 107,5 ±0,3 Bemerkung / Note: - Nichttolerierte Maße nach / Measure without tolerances according DIN ISO 2768-T1-m - PCB-Lochmuster / PCB hole pattern: see pin position - Toleranz Pin-Position und PCB-Lochmuster / Tolerance of pin position and PCB hole pattern: - Montageanleitung / Mounting instruction: www.ixys.com Application note IXAN0024 0.1 Detail A: PCB-Montage / Mounting on PCB - Empfohlene, selbstschneidende Schraube / Recommended, self-tapping screw: EJOT PT® (Größe / size: K25) - Max. Schraubenlänge / Max. screw length: PCB-Dicke / thickness + 6 mm (max. Lochtiefe / hole depth) - Empfohlenes Drehmoment / Recommended mounting torque: 1.5 Nm 24/25 34 36 38 29 30 NTC 3 6/7 10/11 14/15 21/22 IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved 45/46 41 40 48/49 Data according to IEC 60747and per semiconductor unless otherwise specified 20191220e MCNA120UI2200TED Thyristor 120 104 500 VR = 0 V 50 Hz, 80% VRRM 100 400 80 IT ITSM TVJ = 125°C 60 [A] I 2t 300 150°C 103 TVJ = 45°C [A] TVJ = 45°C 2 [A s] 40 TVJ = 140°C 200 TVJ = 140°C 20 TVJ = 25°C 0 0.5 102 100 1.0 1.5 2.0 2.5 0.01 0.1 VT [V] 5 2 1 3 4 5 6 7 8 910 t [ms] Fig. 3 I t versus time (1-10 s) 100.0 3 2 2 Fig. 2 Surge overload current ITSM: crest value, t: duration 1: IGD, TVJ = 140°C 2: IGT, TVJ = 25°C 3: IGT, TVJ = -40°C VG 1 t [s] Fig. 1 Forward characteristics 10 1 100 dc = 1 0.5 0.4 0.33 0.17 0.08 80 6 TVJ = 25°C 10.0 4 ITAVM 60 tgd 1 [V] lim. [µs] 1.0 [A] 40 typ. 20 4: PGAV = 0.5 W 5: PGM = 5 W 6: PGM = 10 W 0.1 1 10 100 1000 0.1 0.01 10000 0 0.10 60 40 80 120 160 Tcase [°C] Fig. 6 Max. forward current at case temperature 0.80 dc = 1 0.5 0.4 0.33 0.17 0.08 Ptot 0 Fig. 5 Gate controlled delay time tgd Fig. 4 Gate voltage & gate current 80 10.00 IG [A] IG [mA] 100 1.00 0.70 RthHA 0.2 0.4 0.6 0.8 1.0 2.0 [W] 0.60 0.50 ZthJC 0.40 i Rthi (K/W) 1 0.0100 2 0.0500 3 0.1400 4 0.3000 5 0.1500 [K/W] 40 0.30 0.20 20 0.10 ti (s) 0.0004 0.0090 0.0140 0.0500 0.3600 0.00 0 0 20 40 IT(AV) [A] 0 40 80 120 160 Fig. 7a Power dissipation versus direct output current Fig. 7b and ambient temperature IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved 1 10 100 1000 10000 t [ms] Tamb [°C] Fig. 8 Transient thermal impedance junction to case Data according to IEC 60747and per semiconductor unless otherwise specified 20191220e MCNA120UI2200TED Brake IGBT + Diode 140 120 120 100 125°C IC 80 100 11 V TVJ = 125°C IC 80 [A] 60 [A] 60 40 40 20 20 0 80 [A] 60 9V 40 1 2 0 1 2 3 6 4 400 RG = 18 Ohm VCE = 900 V VGE = ±15 V TVJ = 125°C 300 [mJ] 40 800 30 tr Eoff 200 20 100 80 400 [ns] RG = 18 Ohm 16 80 120 60 Erec Irr 8 40 40 80 120 10 Erec 0 0 20 40 60 200 20 0 0.0 8 1.0 1.5 2.0 2.5 3.0 VF [V] Fig. 6 Typ. forward characteristics Diode 1 Diode 80 TVJ = 125°C VR = 900 V IF = 60 A 6 60 [mJ] 0 80 100 120 140 0.5 100 Erec 20 Erec [A] 120 Irr [A] 4 4 125°C 60 0 160 12 [A] [mJ] 25°C IF IC [A] Fig. 5 Typ. turn-off energy & switch. times vs. collector current Irr 12 VCE = 900 V VGE = ±15 V TVJ = 125°C Eoff 0 100 RG =18 Ohm VR = 900 V TVJ = 125°C 13 40 0 IC [A] Fig. 4 Typ. turn-on energy & switch. times vs. collector current 20 t tf 10 0 160 120 12 600 Eon 0 11 100 [ns] [mJ] 20 10 80 tr 40 9 Fig. 3 Typ. transfer charact. IGBT Fig.2 Typ. output characteristics IGBT td(off) Eon 40 8 VGE [V] td(on) 0 7 VCE [V] Fig.1 Output characteristics IGBT 60 25°C 0 3 VCE [V] 80 125°C 20 0 0 VCE = 20 V 140 13 V 17 V 15 V 120 25°C 100 IC VGE = 19 V 140 Irr ZthJC IGBT [K/W] 40 Diode Ri ti 0.010 0.001 0.050 0.001 0.240 0.021 0.350 0.090 0.1 2 20 0 10 20 30 40 0 50 1 10 100 IGBT Ri ti 0.010 0.001 0.030 0.008 0.120 0.045 0.070 0.100 1000 10000 IF [A] RG [Ohm] t [ms] Fig. 7 Typ. reverse recovery characteristics Diode Fig. 8 Typ. reverse recovery characteristics Diode Fig. 9 Transient thermal resistance junction to case IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20191220e