MCO500-12io1
Thyristor Module
VRRM
=
1200 V
I TAV
=
560 A
VT
=
1,01 V
Single Thyristor
Part number
MCO500-12io1
Backside: isolated
3
54
2
Features / Advantages:
Applications:
Package: Y1
● Thyristor for line frequency
● Planar passivated chip
● Long-term stability
● Direct Copper Bonded Al2O3-ceramic
● Line rectifying 50/60 Hz
● Softstart AC motor control
● DC Motor control
● Power converter
● AC power control
● Lighting and temperature control
● Isolation Voltage: 4800 V~
● Industry standard outline
● RoHS compliant
● Soldering pins for PCB mounting
● Base plate: Copper
internally DCB isolated
● Advanced power cycling
Disclaimer Notice
Information furnished is believed to be accurate and reliable. However, users should independently
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,
and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.
IXYS reserves the right to change limits, conditions and dimensions.
© 2022 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20220914i
MCO500-12io1
Ratings
Thyristor
Conditions
Symbol
VRSM/DSM
Definition
max. non-repetitive reverse/forward blocking voltage
TVJ = 25°C
VRRM/DRM
max. repetitive reverse/forward blocking voltage
TVJ = 25°C
I R/D
reverse current, drain current
VT
forward voltage drop
min.
typ.
TVJ = 25°C
2
mA
TVJ = 125°C
40
mA
I T = 500 A
TVJ = 25°C
1,08
V
1,27
V
1,01
V
TVJ = 125 °C
I T = 1000 A
I TAV
average forward current
TC = 85°C
I T(RMS)
RMS forward current
180° sine
VT0
threshold voltage
rT
slope resistance
R thJC
thermal resistance junction to case
RthCH
thermal resistance case to heatsink
Ptot
total power dissipation
I TSM
max. forward surge current
for power loss calculation only
CJ
junction capacitance
PGM
max. gate power dissipation
V
VR/D = 1200 V
I T = 500 A
value for fusing
1200
VR/D = 1200 V
I T = 1000 A
I²t
max. Unit
1300
V
1,24
V
T VJ = 140°C
560
A
880
A
TVJ = 140°C
0,80
V
0,38
mΩ
0,072 K/W
0,024
K/W
TC = 25°C
1600
W
t = 10 ms; (50 Hz), sine
TVJ = 45°C
17,0
kA
t = 8,3 ms; (60 Hz), sine
VR = 0 V
18,4
kA
t = 10 ms; (50 Hz), sine
TVJ = 140°C
14,5
kA
t = 8,3 ms; (60 Hz), sine
VR = 0 V
15,6
kA
t = 10 ms; (50 Hz), sine
TVJ = 45°C
1,45 MA²s
t = 8,3 ms; (60 Hz), sine
VR = 0 V
1,40 MA²s
t = 10 ms; (50 Hz), sine
TVJ = 140°C
1,04 MA²s
t = 8,3 ms; (60 Hz), sine
VR = 0 V
VR = 400 V f = 1 MHz
TVJ = 25°C
t P = 30 µs
T C = 140°C
1,01 MA²s
876
t P = 300 µs
pF
120
W
60
W
20
W
PGAV
average gate power dissipation
(di/dt) cr
critical rate of rise of current
TVJ = 140°C; f = 50 Hz
repetitive, IT =1500 A
1 A/µs;
t P = 200 µs; di G /dt =
(dv/dt)cr
critical rate of rise of voltage
VD = ⅔ VDRM
VGT
gate trigger voltage
VD = 6 V
TVJ = 25°C
TVJ = -40°C
3
V
I GT
gate trigger current
VD = 6 V
TVJ = 25°C
300
mA
TVJ = -40°C
400
mA
VGD
gate non-trigger voltage
TVJ = 140°C
0,25
V
I GD
gate non-trigger current
10
mA
IL
latching current
TVJ = 25 °C
400
mA
IG =
1 A; VD = ⅔ VDRM
100 A/µs
non-repet., IT = 500 A
500 A/µs
1000 V/µs
TVJ = 140°C
R GK = ∞; method 1 (linear voltage rise)
VD = ⅔ VDRM
tp =
IG =
30 µs
1 A; di G /dt =
2
V
1 A/µs
IH
holding current
VD = 6 V RGK = ∞
TVJ = 25 °C
300
mA
t gd
gate controlled delay time
VD = ½ VDRM
TVJ = 25 °C
2
µs
tq
turn-off time
VR = 100 V; I T = 500A; VD = ⅔ VDRM TVJ =125 °C
IG =
1 A; di G /dt =
di/dt = 10 A/µs; dv/dt =
IXYS reserves the right to change limits, conditions and dimensions.
© 2022 IXYS all rights reserved
1 A/µs
350
µs
50 V/µs; t p = 200 µs
Data according to IEC 60747and per semiconductor unless otherwise specified
20220914i
MCO500-12io1
Package
Ratings
Y1
Symbol
I RMS
Definition
Conditions
RMS current
per terminal
min.
typ.
max.
600
Unit
A
TVJ
virtual junction temperature
-40
140
°C
T op
operation temperature
-40
125
°C
Tstg
storage temperature
-40
125
°C
650
Weight
g
MD
mounting torque
4,5
7
Nm
MT
terminal torque
11
13
Nm
d Spp/App
terminal to terminal
creepage distance on surface | striking distance through air
terminal to backside
d Spb/Apb
VISOL
t = 1 second
isolation voltage
t = 1 minute
Production
Index (PI)
Date Code
(DC)
50/60 Hz, RMS; IISOL ≤ 1 mA
16,0
mm
25,0
mm
4800
V
4000
V
Circuit
yywwAA
Part Number
Lot.No: xxxxxx
Data Matrix: part no. (1-19), DC + PI (20-25), lot.no.# (26-31),
blank (32), serial no.# (33-36)
Ordering
Standard
Ordering Number
MCO500-12io1
Similar Part
MCO500-14io1
MCO500-16io1
MCO500-18io1
MCO600-20io1
Package
Y1-2-CU
Y1-2-CU
Y1-2-CU
Y1-2-CU
MCO600-22io1
Y1-2-CU
Equivalent Circuits for Simulation
I
V0
R0
Marking on Product
MCO500-12io1
Delivery Mode
Box
Code No.
463728
Voltage class
1400
1600
1800
2000
2200
* on die level
T VJ = 140 °C
Thyristor
V 0 max
threshold voltage
0,8
V
R0 max
slope resistance *
0,22
mΩ
IXYS reserves the right to change limits, conditions and dimensions.
© 2022 IXYS all rights reserved
Quantity
2
Data according to IEC 60747and per semiconductor unless otherwise specified
20220914i
MCO500-12io1
Outlines Y1
2x M8
45
10
43
49
52
+0
-1,4
15 ±1
2.8 x 0.8
28.5
50
2
38
35
45 67
22.5
5
3
6.2
80
92
Optional accessories for modules
Keyed gate/cathode twin plugs with wire length = 350 mm, gate = white, cathode = red
Type ZY 180L (L = Left for pin pair 4/5) U L 758, style 3751
3
IXYS reserves the right to change limits, conditions and dimensions.
© 2022 IXYS all rights reserved
54
2
Data according to IEC 60747and per semiconductor unless otherwise specified
20220914i
MCO500-12io1
Thyristor
107
1000
VR = 0V
DC
180 ° sin
120 °
60 °
30 °
12000
800
50 Hz
80 % VRRM
TVJ = 45°C
TVJ = 140°C
ITSM
ITAVM
2
It
8000
600
[A]
6
10
[A]
400
TVJ = 45°C
[A2s]
TVJ = 140°C
4000
200
105
0
0.001
0.01
0.1
0
1
1
10
0
10
R thKA K/W
Ptot
1: IGT, TVJ = 140°C
3
5
1
4
1
[V]
4: PGM = 20 W
5: PGM = 60 W
6: PGM = 120 W
IGD, TVJ = 140°C
0.1
10-3
0
200
400
600
800
6
2
VG
DC
180 ° sin
120 °
60 °
30 °
0
100 125 150
2: IGT, TVJ = 25°C
3: IGT, TVJ = -40°C
0.03
0.07
0.12
0.2
0.3
0.4
0.6
800
75
Fig. 3 Maximum forward current
at case temperature
Fig. 2 I t versus time (1-10 ms)
1200
400
50
TC [°C]
2
Fig. 1 Surge overload current
ITSM : Crest value, t: duration
[W]
25
t [ms]
t [s]
0
25
50
75
100
125
150
10-2
10-1
101
Fig. 4 Power dissipation versus on-state current & ambient temperature
Fig. 5 Gate trigger characteristics
100
5
TVJ = 25°C
R thKA K/W
0.01
0.02
0.03
0.045
0.06
0.08
0.12
4
Ptot
102
IG [A]
TA [°C]
ITAVM [A]
100
3
typ.
tgd
Limit
10
[µs]
[KW] 2
Circuit
B6
6xM CO500
1
1
0
0
300 600 900 1200 1500
0
25
IdAVM [A]
50
75
100
TA [°C]
Fig. 6 Three phase rectifier bridge: Power dissipation versus
direct output current and ambient temperature
IXYS reserves the right to change limits, conditions and dimensions.
© 2022 IXYS all rights reserved
125
150
0.01
0.1
1
10
IG [A]
Fig. 7 Gate trigger delay time
Data according to IEC 60747and per semiconductor unless otherwise specified
20220914i
MCO500-12io1
Thyristor
5000
R thKA K/W
0.01
0.02
0.03
0.045
0.06
0.08
0.12
4000
Ptot
3000
[W]
2000
Circuit
W3
6xMCO500
1000
0
0
300
600
900
1200
0
25
50
IRMS [A]
75
100
125
150
TA [°C]
Fig. 8 Three phase AC-controller: Power dissipation versus
RMS output current and ambient temperatur
0.12
RthJC for various conduction angles d:
d
RthJC (K/W)
DC
0.072
180°
0.0768
120°
0.081
60°
0.092
30°
0.111
0.10
0.08
ZthJC
0.06
30°
60°
120°
180°
DC
[K/W]
0.04
Constants for ZthJC calculation:
ti (s)
i Rthi (K/W)
1
0.0035 0.0054
2
0.0186 0.098
3
0.0432 0.54
4
0.0067 12
0.02
0.00
10-3
10-2
10-1
100
101
102
t [s]
Fig. 9 Transient thermal impedance junction to case
RthJK for various conduction angles d:
d
RthJK (K/W)
DC
0.096
180° 0.1
120° 0.105
60° 0.116
30° 0.135
0.12
ZthJK
0.08
[K/W]
30°
60°
120°
180°
DC
0.04
0.00
10-3
10-2
10-1
100
101
102
Constants for ZthJK calculation:
i
Rthi (K/W)
ti (s)
1
0.0035
0.0054
2
0.0186
0.098
3
0.0432
0.54
4
0.0067
12
5
0.024
12
t [s]
Fig.10 Transient thermal impedance junction to heatsink
IXYS reserves the right to change limits, conditions and dimensions.
© 2022 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20220914i
