MCO500-14IO1

MCO500-14io1 Thyristor Module VRRM = 1400 V I TAV = 560 A VT = 1.01 V Single Thyristor Part number MCO500-14io1 Backside: isolated 3 54 2 Features / Advantages: Applications: Package: Y1 ● Thyristor for line frequency ● Planar passivated chip ● Long-term stability ● Direct Copper Bonded Al2O3-ceramic ● Line rectifying 50/60 Hz ● Softstart AC motor control ● DC Motor control ● Power converter ● AC power control ● Lighting and temperature control ● Isolation Voltage: 3600 V~ ● Industry standard outline ● RoHS compliant ● Soldering pins for PCB mounting ● Base plate: Copper internally DCB isolated ● Advanced power cycling Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20191210h MCO500-14io1 Ratings Thyristor Conditions Symbol VRSM/DSM Definition max. non-repetitive reverse/forward blocking voltage TVJ = 25°C VRRM/DRM max. repetitive reverse/forward blocking voltage TVJ = 25°C I R/D reverse current, drain current VT forward voltage drop min. typ. TVJ = 25°C 2 mA TVJ = 125°C 40 mA I T = 500 A TVJ = 25°C 1.08 V 1.27 V 1.01 V TVJ = 125 °C I T = 1000 A I TAV average forward current TC = 85 °C I T(RMS) RMS forward current 180° sine VT0 threshold voltage rT slope resistance R thJC thermal resistance junction to case for power loss calculation only thermal resistance case to heatsink total power dissipation I TSM max. forward surge current I²t value for fusing V VR/D = 1400 V I T = 500 A RthCH 1400 VR/D = 1400 V I T = 1000 A Ptot max. Unit 1500 V 1.24 V T VJ = 140 °C 560 A 880 A TVJ = 140 °C 0.80 V 0.38 mΩ 0.072 K/W 0.024 K/W TC = 25°C 1600 W t = 10 ms; (50 Hz), sine TVJ = 45°C 17.0 kA t = 8,3 ms; (60 Hz), sine VR = 0 V 18.4 kA t = 10 ms; (50 Hz), sine TVJ = 140 °C 14.5 kA t = 8,3 ms; (60 Hz), sine VR = 0 V 15.6 kA t = 10 ms; (50 Hz), sine TVJ = 45°C 1.45 MA²s t = 8,3 ms; (60 Hz), sine VR = 0 V 1.40 MA²s t = 10 ms; (50 Hz), sine TVJ = 140 °C 1.04 MA²s t = 8,3 ms; (60 Hz), sine VR = 0 V CJ junction capacitance VR = 400 V f = 1 MHz TVJ = 25°C PGM max. gate power dissipation t P = 30 µs T C = 140 °C 1.01 MA²s 876 t P = 300 µs pF 120 W 60 W 20 W PGAV average gate power dissipation (di/dt) cr critical rate of rise of current TVJ = 140 °C; f = 50 Hz repetitive, IT =1500 A t P = 200 µs; di G /dt = 1 A/µs; (dv/dt)cr critical rate of rise of voltage V = ⅔ VDRM VGT gate trigger voltage VD = 6 V TVJ = 25 °C TVJ = -40 °C 3 V I GT gate trigger current VD = 6 V TVJ = 25 °C 300 mA TVJ = -40 °C 400 mA VGD gate non-trigger voltage TVJ = 140°C 0.25 V I GD gate non-trigger current 10 mA IL latching current TVJ = 25 °C 400 mA IG = 1 A; V = ⅔ VDRM 100 A/µs non-repet., I T = 500 A 500 A/µs 1000 V/µs TVJ = 140°C R GK = ∞; method 1 (linear voltage rise) VD = ⅔ VDRM tp = IG = 30 µs 1 A; di G /dt = 2 V 1 A/µs IH holding current VD = 6 V R GK = ∞ TVJ = 25 °C 300 mA t gd gate controlled delay time VD = ½ VDRM TVJ = 25 °C 2 µs tq turn-off time IG = 1 A; di G /dt = di/dt = 10 A/µs dv/dt = IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved 1 A/µs VR = 100 V; I T = 500A; V = ⅔ VDRM TVJ =125 °C 350 µs 50 V/µs t p = 200 µs Data according to IEC 60747and per semiconductor unless otherwise specified 20191210h MCO500-14io1 Package Ratings Y1 Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -40 typ. max. 600 Unit A -40 140 °C -40 125 °C 125 °C 650 Weight g MD mounting torque 4.5 7 Nm MT terminal torque 11 13 Nm d Spp/App terminal to terminal creepage distance on surface | striking distance through air terminal to backside d Spb/Apb VISOL t = 1 second isolation voltage t = 1 minute Production Index (PI) Date Code (DC) 50/60 Hz, RMS; IISOL ≤ 1 mA 16.0 mm 25.0 mm 3600 V 3000 V Circuit yywwAA Part Number Lot.No: xxxxxx Data Matrix: part no. (1-19), DC + PI (20-25), lot.no.# (26-31), blank (32), serial no.# (33-36) Ordering Standard Ordering Number MCO500-14io1 Similar Part MCO500-12io1 MCO500-16io1 MCO500-18io1 MCO600-20io1 Package Y1-2-CU Y1-2-CU Y1-2-CU Y1-2-CU MCO600-22io1 Y1-2-CU Equivalent Circuits for Simulation I V0 R0 Marking on Product MCO500-14io1 Delivery Mode Box Code No. 463736 Voltage class 1200 1600 1800 2000 2200 * on die level T VJ = 140°C Thyristor V 0 max threshold voltage 0.8 V R0 max slope resistance * 0.22 mΩ IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Quantity 2 Data according to IEC 60747and per semiconductor unless otherwise specified 20191210h MCO500-14io1 Outlines Y1 2x M8 45 10 43 49 52 +0 -1,4 15 ±1 2.8 x 0.8 28.5 50 2 38 35 45 67 22.5 5 3 6.2 80 92 Optional accessories for modules Keyed gate/cathode twin plugs with wire length = 350 mm, gate = white, cathode = red Type ZY 180L (L = Left for pin pair 4/5) U L 758, style 3751 3 IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved 54 2 Data according to IEC 60747and per semiconductor unless otherwise specified 20191210h MCO500-14io1 Thyristor 107 1000 VR = 0V DC 180 ° sin 120 ° 60 ° 30 ° 12000 800 50 Hz 80 % VRRM TVJ = 45°C TVJ = 140°C ITSM ITAVM 2 It 8000 600 [A] 6 10 [A] 400 TVJ = 45°C [A2s] TVJ = 140°C 4000 200 105 0 0.001 0.01 0.1 0 1 1 10 0 10 R thKA K/W Ptot 1: IGT, TVJ = 140°C 3 5 1 4 1 [V] 4: PGM = 20 W 5: PGM = 60 W 6: PGM = 120 W IGD, TVJ = 140°C 0.1 10-3 0 200 400 600 800 6 2 VG DC 180 ° sin 120 ° 60 ° 30 ° 0 100 125 150 2: IGT, TVJ = 25°C 3: IGT, TVJ = -40°C 0.03 0.07 0.12 0.2 0.3 0.4 0.6 800 75 Fig. 3 Maximum forward current at case temperature Fig. 2 I t versus time (1-10 ms) 1200 400 50 TC [°C] 2 Fig. 1 Surge overload current ITSM : Crest value, t: duration [W] 25 t [ms] t [s] 0 25 50 75 100 125 150 10-2 10-1 Fig. 4 Power dissipation versus on-state current & ambient temperature 102 Fig. 5 Gate trigger characteristics 100 5 TVJ = 25°C R thKA K/W 0.01 0.02 0.03 0.045 0.06 0.08 0.12 4 Ptot 101 IG [A] TA [°C] ITAVM [A] 100 3 typ. tgd Limit 10 [µs] [KW] 2 Circuit B6 6xM CO500 1 1 0 0 300 600 900 1200 1500 0 25 IdAVM [A] 50 75 100 TA [°C] Fig. 6 Three phase rectifier bridge: Power dissipation versus direct output current and ambient temperature IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved 125 150 0.01 0.1 1 10 IG [A] Fig. 7 Gate trigger delay time Data according to IEC 60747and per semiconductor unless otherwise specified 20191210h MCO500-14io1 Thyristor 5000 R thKA K/W 0.01 0.02 0.03 0.045 0.06 0.08 0.12 4000 Ptot 3000 [W] 2000 Circuit W3 6xMCO500 1000 0 0 300 600 900 1200 0 25 50 IRMS [A] 75 100 125 150 TA [°C] Fig. 8 Three phase AC-controller: Power dissipation versus RMS output current and ambient temperatur 0.12 RthJC for various conduction angles d: d RthJC (K/W) DC 0.072 180° 0.0768 120° 0.081 60° 0.092 30° 0.111 0.10 0.08 ZthJC 0.06 30° 60° 120° 180° DC [K/W] 0.04 Constants for ZthJC calculation: i Rthi (K/W) ti (s) 1 0.0035 0.0054 2 0.0186 0.098 3 0.0432 0.54 4 0.0067 12 0.02 0.00 10-3 10-2 10-1 100 101 102 t [s] Fig. 9 Transient thermal impedance junction to case RthJK for various conduction angles d: d RthJK (K/W) DC 0.096 180° 0.1 120° 0.105 60° 0.116 30° 0.135 0.12 ZthJK 0.08 [K/W] 30° 60° 120° 180° DC 0.04 0.00 10-3 10-2 10-1 100 101 102 Constants for ZthJK calculation: i Rthi (K/W) ti (s) 1 0.0035 0.0054 2 0.0186 0.098 3 0.0432 0.54 4 0.0067 12 5 0.024 12 t [s] Fig.10 Transient thermal impedance junction to heatsink IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20191210h