MCO600-20IO1

MCO600-20io1 High Voltage Thyristor Module VRRM = 2000 V I TAV = 600 A VT = 1,06 V Single Thyristor Part number MCO600-20io1 Backside: isolated 3 54 2 Features / Advantages: Applications: Package: Y1 ● Thyristor for line frequency ● Planar passivated chip ● Long-term stability ● Direct Copper Bonded Al2O3-ceramic ● Line rectifying 50/60 Hz ● Softstart AC motor control ● DC Motor control ● Power converter ● AC power control ● Lighting and temperature control ● Isolation Voltage: 3600 V~ ● Industry standard outline ● RoHS compliant ● Soldering pins for PCB mounting ● Base plate: Copper internally DCB isolated ● Advanced power cycling Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20191210f MCO600-20io1 Ratings Thyristor Conditions Symbol VRSM/DSM Definition max. non-repetitive reverse/forward blocking voltage TVJ = 25°C VRRM/DRM max. repetitive reverse/forward blocking voltage TVJ = 25°C I R/D reverse current, drain current VT forward voltage drop min. typ. TVJ = 25°C 2 mA TVJ = 125°C 40 mA I T = 600 A TVJ = 25°C 1,12 V 1,34 V 1,06 V TVJ = 125 °C I T = 1200 A I TAV average forward current TC = 85°C 180° sine I T(RMS) threshold voltage rT slope resistance R thJC thermal resistance junction to case RthCH thermal resistance case to heatsink Ptot total power dissipation I TSM max. forward surge current I²t for power loss calculation only value for fusing V VR/D = 2000 V I T = 600 A VT0 2000 VR/D = 2000 V I T = 1200 A RMS forward current max. Unit 2100 V 1,33 V T VJ = 140°C 600 A 940 A TVJ = 140°C 0,81 V 0,4 mΩ 0,065 K/W 0,02 K/W TC = 25°C 1770 W t = 10 ms; (50 Hz), sine TVJ = 45°C 15,0 kA t = 8,3 ms; (60 Hz), sine VR = 0 V 16,2 kA t = 10 ms; (50 Hz), sine TVJ = 140°C 12,8 kA t = 8,3 ms; (60 Hz), sine VR = 0 V 13,8 kA t = 10 ms; (50 Hz), sine TVJ = 45°C 1,13 MA²s t = 8,3 ms; (60 Hz), sine VR = 0 V t = 10 ms; (50 Hz), sine TVJ = 140°C t = 8,3 ms; (60 Hz), sine VR = 0 V CJ junction capacitance VR = 700 V f = 1 MHz TVJ = 25°C PGM max. gate power dissipation t P = 30 µs T C = 140°C 1,09 MA²s 812,8 kA²s 788,8 kA²s 469 t P = 300 µs pF 120 W 60 W 20 W PGAV average gate power dissipation (di/dt) cr critical rate of rise of current TVJ = 140°C; f = 50 Hz repetitive, IT =1800 A 1 A/µs; t P = 200 µs; di G /dt = (dv/dt)cr critical rate of rise of voltage VD = ⅔ VDRM VGT gate trigger voltage VD = 6 V TVJ = 25°C TVJ = -40°C 3 V I GT gate trigger current VD = 6 V TVJ = 25°C 300 mA TVJ = -40°C 400 mA TVJ = 140°C 0,25 V 10 mA TVJ = 25 °C 400 mA IG = 1 A; VD = ⅔ VDRM 100 A/µs non-repet., IT = 600 A 500 A/µs 1000 V/µs TVJ = 140°C R GK = ∞; method 1 (linear voltage rise) VGD gate non-trigger voltage I GD gate non-trigger current IL latching current VD = ⅔ VDRM tp = IG = 30 µs 1 A; di G /dt = 2 V 1 A/µs IH holding current VD = 6 V RGK = ∞ TVJ = 25 °C 300 mA t gd gate controlled delay time VD = ½ VDRM TVJ = 25 °C 2 µs tq turn-off time VR = 100 V; I T = 600A; VD = ⅔ VDRM TVJ =125 °C IG = 1 A; di G /dt = di/dt = 10 A/µs; dv/dt = IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved 1 A/µs 350 µs 50 V/µs; t p = 200 µs Data according to IEC 60747and per semiconductor unless otherwise specified 20191210f MCO600-20io1 Package Ratings Y1 Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -40 typ. max. 600 Unit A -40 140 °C -40 125 °C 125 °C 650 Weight g MD mounting torque 4,5 7 Nm MT terminal torque 11 13 Nm d Spp/App terminal to terminal creepage distance on surface | striking distance through air terminal to backside d Spb/Apb VISOL t = 1 second isolation voltage t = 1 minute Production Index (PI) Date Code (DC) 50/60 Hz, RMS; IISOL ≤ 1 mA 16,0 mm 25,0 mm 3600 V 3000 V Circuit yywwAA Part Number Lot.No: xxxxxx Data Matrix: part no. (1-19), DC + PI (20-25), lot.no.# (26-31), blank (32), serial no.# (33-36) Ordering Standard Ordering Number MCO600-20io1 Equivalent Circuits for Simulation I V0 R0 Marking on Product MCO600-20io1 * on die level Delivery Mode Box Code No. 474320 T VJ = 140 °C Thyristor V 0 max threshold voltage 0,81 V R0 max slope resistance * 0,22 mΩ IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Quantity 2 Data according to IEC 60747and per semiconductor unless otherwise specified 20191210f MCO600-20io1 Outlines Y1 2x M8 45 10 43 49 52 +0 -1,4 15 ±1 2.8 x 0.8 28.5 50 2 38 35 45 67 22.5 5 3 6.2 80 92 Optional accessories for modules Keyed gate/cathode twin plugs with wire length = 350 mm, gate = white, cathode = red Type ZY 180L (L = Left for pin pair 4/5) U L 758, style 3751 3 IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved 54 2 Data according to IEC 60747and per semiconductor unless otherwise specified 20191210f MCO600-20io1 Thyristor 1200 13000 1000 12000 VR = 0 V 11000 800 ITSM IT 600 [A] [A] 2 TVJ = 45°C 10000 It 106 TVJ = 45°C 9000 2 [A s] 400 8000 125°C 140°C 200 0 0,4 7000 TVJ = 25°C TVJ = 125°C TVJ = 125°C 105 6000 0,8 1,2 1,6 0,01 0,1 1 t [ms] 2 typ. tgd 5 1 IT(AV)M Limit 600 10 4 [V] [A] [µs] 101 400 200 4: PGM = 20 W 5: PGM = 60 W 6: PGM = 120 W 100 dc = 1 0.5 0.4 0.33 0.17 0.08 1000 800 2 1 102 0 0,01 0,1 1 10 0 25 50 IG [A] IG [A] Fig. 4 Gate trigger characteristics 100 125 150 Fig. 6 Max. forward current at case temperature 0,10 RthHA 0.02 0.04 0.06 0.08 0.1 0.2 P(AV) 75 TC [°C] Fig. 5 Gate controlled delay time dc = 1 0.5 0.4 0.33 0.17 0.08 600 4 5 6 7 8 910 Fig. 3 I t versus time (1-10 ms) 6 1 800 3 Fig. 2 Surge overload current TVJ = 25°C 3 IGD, TVJ = 125°C 0,1 10-3 10-2 10-1 2 100 1: IGT, TVJ = 125°C 2: IGT, TVJ = 25°C 3: IGT, TVJ = -40°C VG 1 t [s] VT [V] Fig. 1 Forward characteristics 10 107 50 Hz, 80% VRRM 30° 60° 120° 180° DC 0,08 ZthJC 0,06 [K/W] 400 0,04 [W] 200 Rthi [K/W] 0,02 0 0 200 400 600 IT(AV) [A] 0 50 100 150 Tamb [°C] © 2019 IXYS all rights reserved 0,01 0,1 0.00054 0.0098 0.0390 0.0061 0.54 12 1 10 100 t [s] Fig. 7a Power dissipation versus direct output current Fig. 7b and ambient temperature IXYS reserves the right to change limits, conditions and dimensions. 0,00 0,001 ti [s] 0.0031 0.0168 Fig. 8 Transient thermal impedance Data according to IEC 60747and per semiconductor unless otherwise specified 20191210f