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MEO450-12DA

MEO450-12DA

  • 厂商:

    IXYS(艾赛斯)

  • 封装:

    Y4-M6

  • 描述:

    Diode Standard 1200V (1.2kV) 453A Chassis Mount Y4-M6

  • 数据手册
  • 价格&库存
MEO450-12DA 数据手册
MEO 450-12 DA Fast Recovery Epitaxial Diode (FRED) Module VRRM = 1200 V IFAVM = 453 A trr = 450 ns Preliminary data 3 VRRM V V 1200 1200 1 Type MEO 450-12DA Symbol Test Conditions IFRMS IFAVM ÿÿ① IFRM TC = 75°C TC = 75°C; rectangular, d = 0.5 tP < 10 ms; rep. rating, pulse width limited by TVJM 640 453 2460 A A A IFSM TVJ = 45°C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 4800 5280 A A TVJ = 150°C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 4320 4750 A A I2t Maximum Ratings t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 115200 117100 A2s A2s TVJ = 150°C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 93300 94800 A2s A2s -40...+150 -40...+125 110 °C °C °C TVJ = 45°C; TVJ Tstg TSmax Ptot TC = 25°C 1750 W VISOL 50/60 Hz, RMS t = 1 min IISOL £ 1 mA t=1s 3000 3600 V~ V~ Md Mounting torque (M6) Terminal connection torque (M6) dS dA a Creeping distance on surface Strike distance through air Maximum allowable acceleration 2.25-2.75/20-25 Nm/lb.in. 4.50-5.50/40-48 Nm/lb.in. Weight 12.7 9.6 50 mm mm m/s2 150 g Symbol Test Conditions IR TVJ = 25°C TVJ = 25°C TVJ = 125°C VR = VRRM VR = 0.8 • VRRM VR = 0.8 • VRRM 24 6 120 mA mA mA VF IF = 300 A; TVJ TVJ TVJ TVJ 1.51 1.78 1.76 1.96 V V V V 1.16 1.15 V mW 0.114 0.071 K/W K/W IF = 520 A; Characteristic Values (per diode) typ. max. = 125°C = 25°C = 125°C = 25°C VT0 rT For power-loss calculations only RthJH RthJC DC current DC current trr IRM 600 A IF = 600 V VR= -di/dt = 800 A/ms TVJ = 100°C TVJ = 25°C TVJ = 100°C 450 ① IFAVM rating includes reverse blocking losses at TVJM, VR = 0.6 VRRM, duty cycle d = 0.5 Data according to IEC 60747 IXYS reserves the right to change limits, test conditions and dimensions © 2000 IXYS All rights reserved 500 110 165 Features International standard package with DCB ceramic base plate Planar passivated chips Short recovery time Low switching losses Soft recovery behaviour Isolation voltage 3600 V~ UL registered E 72873 ● ● ● ● ● ● ● Applications Antiparallel diode for high frequency switching devices Free wheeling diode in converters and motor control circuits Inductive heating and melting Uninterruptible power supplies (UPS) Ultrasonic cleaners and welders ● ● ● ● ● Advantages High reliability circuit operation Low voltage peaks for reduced protection circuits Low noise switching Low losses ● ● ● ● Dimensions in mm (1 mm = 0.0394") ns A A 749 VRSM 3 1 1-2 MEO 450-12 DA 800 A 700 IF 120 µC 100 200 A 180 TVJ= 100°C VR = 600V IF=600A IF=600A IF=450A IF=225A 80 500 400 160 IRM 140 max. Qr 600 60 TVJ= 100°C VR = 600V max. IF=600A IF=600A IF=450A IF=225A 120 100 typ. 80 300 40 TVJ=125°C TVJ=25°C 100 60 typ. 200 40 20 20 0 0.0 0.5 1.0 0 100 2.0 V 2.5 1.5 A/ms 1000 -diF/dt VF 0.6 IF=600A IF=600A IF=450A IF=225A 2.5 µs 2.0 VFR 70 max. 1200 VFR tfr tfr 60 1.5 50 800 Qr TVJ= 125°C IF = 520A 80 trr IRM ms 1000 600 A/ 800 -diF/dt 100 A V 90 TVJ= 100°C VR = 600V 1600 0.8 400 2000 ns µC 1.0 200 Fig. 3 Peak reverse current IRM versus -diF / dt 1.2 Kf 0 Fig. 2 Reverse recovery charge Qr versus -diF / dt Fig. 1 Forward current IF versus VF 1.4 0 1.0 40 30 0.4 typ. 400 0.5 20 0.2 10 0.0 0 0 40 80 120 °C 160 0 200 400 TVJ Fig. 4 Dynamic parameters Qr, IRM versus TVJ 600 A/ 800 ms 1000 -diF/dt Fig. 5 Recovery time trr versus -diF / dt 0.14 K/W 0.12 0 0 400 0.0 800 1200 A/ms -diF/dt Fig. 6 Peak forward voltage VFR and tfr versus diF / dt Constants for ZthJS calculation: i 1 2 3 4 0.10 ZthJS thJH 0.08 Rthi (K/W) ti (s) 0.001 0.004 0.027 0.082 0.08 0.024 0.112 0.464 0.06 0.04 0.02 0.00 0.001 0.01 0.1 1s 10 t Fig. 7 Transient thermal impedance junction to case © 2000 IXYS All rights reserved 2-2
MEO450-12DA 价格&库存

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