MID200-12A4

MII 200-12 A4 MID 200-12 A4 MDI 200-12 A4 IC25 = 270 A VCES = 1200 V VCE(sat) typ. = 2.2 V IGBT Modules Short Circuit SOA Capability Square RBSOA MII MID 3 MDI 3 3 1 2 3 11 10 9 8 9 1 11 10 2 1 11 10 8 9 8 1 2 2 E 72873 Symbol Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 20 kW VGES VGEM 1200 1200 V V Continuous Transient ±20 ±30 V V IC25 IC80 ICM TC = 25°C TC = 80°C TC = 80°C, tp = 1 ms 270 180 360 A A A tSC (SCSOA) VGE = ±15 V, VCE = VCES, TJ = 125°C RG = 6.8 W, non repetitive 10 ms RBSOA VGE = ±15 V, TJ = 125°C, RG = 6.8 W Clamped inductive load, L = 100 mH ICM = 360 VCEK < VCES A Ptot TC = 25°C 1130 W 150 °C -40 ... +150 °C 4000 4800 V~ V~ Features NPT IGBT technology low saturation voltage low switching losses switching frequency up to 30 kHz square RBSOA, no latch up high short circuit capability positive temperature coefficient for easy parallelling MOS input, voltage controlled ultra fast free wheeling diodes package with DCB ceramic base plate isolation voltage 4800 V UL registered E72873 ● ● ● ● ● ● ● ● ● ● ● ● Advantages ● TJ Tstg VISOL 50/60 Hz, RMS t = 1 min IISOL £ 1 mA t=1s Insulating material: Al2O3 ● Typical Applications ● ● Md Mounting torque (module) (teminals) 2.25-2.75 20-25 2.5-3.7 22-33 Nm lb.in. Nm lb.in. dS dA a Creepage distance on surface Strike distance through air Max. allowable acceleration 10 9.6 50 mm mm m/s2 Weight Typical 250 8.8 g oz. space and weight savings reduced protection circuits ● ● AC and DC motor control AC servo and robot drives power supplies welding inverters 030 Data according to a single IGBT/FRED unless otherwise stated. © 2000 IXYS All rights reserved 1-4 MII 200-12 A4 Symbol Conditions V(BR)CES VGE = 0 V VGE(th) IC = 6 mA, VCE = VGE ICES VCE = VCES IGES VCE = 0 V, VGE = ±20 V VCE(sat) IC = 150 A, VGE = 15 V Cies Coes Cres td(on) tr td(off) tf Eon Eoff RthJC RthJS Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 1200 Dimensions in mm (1 mm = 0.0394") V 4.5 TJ = 25°C TJ = 125°C MID 200-12 A4 MDI 200-12 A4 6.5 15 V 10 mA mA ±700 nA 2.2 VCE = 25 V, VGE = 0 V, f = 1 MHz Inductive load, TJ = 125°C IC = 150 A, VGE = ±15 V VCE = 600 V, RG = 6.8 W with heatsink compound 2.7 V 11 1.5 0.65 nF nF nF 100 50 650 50 24.2 21 ns ns ns ns mJ mJ 0.22 0.11 K/W K/W Equivalent Circuits for Simulation Reverse Diode (FRED) Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. VF IF = 150 A, VGE = 0 V, IF = 150 A, VGE = 0 V, TJ = 125°C IF TC = 25°C TC = 80°C IRM trr IF = 150 A, VGE = 0 V, -diF/dt = 1200 A/ms TJ = 125°C, VR = 600 V RthJC RthJS with heatsink compound 2.2 1.8 2.5 1.9 V V 300 200 A A 125 200 A ns 0.45 0.23 K/W K/W Conduction IGBT (typ. at VGE = 15 V; TJ = 125°C) V0 = 1.5 V; R0 = 7.0 mW Free Wheeling Diode (typ. at TJ = 125°C) V0 = 1.3 V; R0 = 3.4 mW Thermal Response IGBT (typ.) Cth1 = 0.40 J/K; Rth1 = 0.110 K/W Cth2 = 0.93 J/K; Rth2 = 0.003 K/W Free Wheeling Diode (typ.) Cth1 = 0.28 J/K; Rth1 = 0.226 K/W Cth2 = 0.51 J/K; Rth2 = 0.005 K/W © 2000 IXYS All rights reserved 2-4 MII 200-12 A4 350 350 VGE=17V TJ = 25°C A 300 15V 13V IC 250 MID 200-12 A4 MDI 200-12 A4 VGE=17V 15V TJ = 125°C A 300 13V IC 250 11V 200 200 150 150 100 11V 9V 100 9V 50 50 0 0.0 0.5 1.0 1.5 2.0 2.5 0 0.0 3.0 V 0.5 1.0 1.5 2.0 VCE Fig. 1 Typ. output characteristics 3.5 V Fig. 2 Typ. output characteristics 600 A 500 350 VCE = 20V A 300 2.5 3.0 VCE TJ = 25°C IC 250 IF TJ = 125°C TJ = 25°C 400 200 300 150 200 100 100 50 0 0 5 6 7 8 9 10 0 11 V 1 2 3 V 4 VF VGE Fig. 3 Typ. transfer characteristics Fig. 4 Typ. forward characteristics of free wheeling diode 250 100 20 V VCE = 600V IC = 150A VGE 15 ns trr A 80 200 60 150 IRM trr 10 100 40 IRM 5 TJ = 125°C VR = 600V IF = 150A 20 50 200-12 0 0 0 200 400 600 800 QG Fig. 5 Typ. turn on gate charge © 2000 IXYS All rights reserved nC 0 200 400 A/ms 600 800 -di/dt 0 1000 Fig. 6 Typ. turn off characteristics of free wheeling diode 3-4 MII 200-12 A4 90 Eon 80 120 td(on) mJ mJ tr 80 t Eoff 60 Eon t 400 VCE = 600V VGE = ±15V 40 RG = 6.8W TJ = 125°C 20 0 0 300 A 100 200 IC Fig. 7 Typ. turn on energy and switching times versus collector current 50 td(on) VCE = 600V VGE = ±15V IC = 150A TJ = 125°C 40 Eon Eon tr 20 10 0 4 Fig. 8 Typ. turn off energy and switching times versus collector current 200 50 ns mJ 160 40 t 30 0 8 12 16 20 24 W 2000 VCE = 600V VGE = ±15V IC = 150A TJ = 125°C Eoff t 30 80 20 800 40 10 400 tf 0 4 8 12 K/W 0.1 100 ZthJC 400 600 800 1000 1200 V VCE Fig. 11 Reverse biased safe operating area RBSOA © 2000 IXYS All rights reserved diode 0.01 24 0 W 28 IGBT 0.001 0.0001 0 20 Fig.10 Typ. turn off energy and switching times versus gate resistor A RG = 6.8W TJ = 125°C VCEK < VCES 16 RG 1 ICM 300 1200 Eoff 0 0 28 400 200 1600 120 Fig. 9 Typ. turn on energy and switching times versus gate resistor 0 ns td(off) RG 200 0 300 A IC mJ 200 tf 0 0 200 600 40 RG = 6.8W TJ = 125°C 100 ns td(off) Eoff VCE = 600V VGE = ±15V 0 800 ns 60 30 MID 200-12 A4 MDI 200-12 A4 single pulse 0.00001 0.00001 0.0001 200-12 0.001 0.01 0.1 s 1 t Fig. 12 Typ. transient thermal impedance 4-4